2.50 μm the crystalline quality of epitaxial piezoelectric pmn-pt film on si is better than bulk...
Post on 19-Dec-2015
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2.50 μm
The crystalline quality of epitaxial piezoelectric PMN-PT film on Si is better than bulk single crystals.
Hyper-Active piezoelectric NanosystemsHyper-Active piezoelectric NanosystemsNIRT ECCS-0708759NIRT ECCS-0708759
C.B. Eom, C.B. Eom, R. Blick,R. Blick, M.S. Rzchowski, X.Q. Pan, D.G. Schlom, L.Q. Chen. V. Aksyuk M.S. Rzchowski, X.Q. Pan, D.G. Schlom, L.Q. Chen. V. Aksyuk University of Wisconsin-Madison, University of Michigan, Ann Arbor, Penn State University, Bell LaboratoriesUniversity of Wisconsin-Madison, University of Michigan, Ann Arbor, Penn State University, Bell Laboratories
Major challenges are emerging as MEMS move to smaller size and increased integration density, while requiring faster and larger relative motion range. Continued scaling of MEMS to the nanometer regime, NEMS, requires revolutionary advances in actuators. We overcome these challenges with Hyper-Active NEMS devices using epitaxial thin film heterostructures of Pb(Mg1/3Nb2/3)-PbTiO3 (PMN-PT) giant piezoelectric materials integrated directly on silicon. We will explore the scientific issues governing their nanoscale size effects and electromechanical coupling.
SrRuO3
PMN-PT
2 nm
Si
SrRuO3
PMN-PT
100 nm
SrTiO3
TEM by X.Q. Pan, Michigan
Epitaxial piezoelctric films on siliconBackground Fabrication of Piezoelectric Cantilever
Theory
245nm
Pt : 50nm
PMN-PT : 300nm
Silicon : 175nm
SRO/STO/SiO2: 100/13/10nm100/50nm
245nm
75 um
Pt (B.E)
50 um
Si
STO
2 nm
Longitudinal (d33) and Transverse (d31) piezoelectric responses of a nano-island is much higher than continuous films
0.5 m Pb(Mg1/3Nb2/3)-PbTiO3 (PMN-PT)/ 0.5 m Si, 5 m wide and 100 m long bi-morph cantilever
Orders of magnitude lower actuation voltage required for piezoelectric switches displacements (Z) as compared to classical electrostatic switches. Inset show modeled cantilever.
5 nm
200 nm
(b)
(a)STO
SRO[001]
STO[001]
(c)
SRO[001]
20 nm
d33 (pm/V) e31 (C/m2)
PMN-PT bulk single crystal 1500-2500 -30*
Epitaxial PMN-PT Film on Si 1200 -30
Previous work Best PZT Film 400 -13
Previous work Best PMN-PT Film 280 <-7
Broader Impact
Teachers from the SESO secondary school in Mayaguez, Puerto Rico participating in atomic layer controlled growth in the PI’s laboratory in summer 2005. We will bring secondary school science teachers from Mayagüez, Puerto Rico each summer for a nanotechnology learning/research experience.
We have developed the fabrication process of piezo-MEMS cantilever with new class of giant piezoelectric material.
This research will develop a fundamental scientific understanding of new phenomena in hyper active nanoscale electromechanical devices, which can be applied for novel and high performance signal processing, communications, sensors and transducers for medical imaging, and nano-positioning actuators. Hyper-Active NEMS from giant piezoelectric materials will reduce power consumption and enhance speed of actuators and sensitivity of sensors.
Outreach
-80 -60 -40 -20 0 20 40 60 80
-1800
-1200
-600
0
600
1200
1800
d 33
(pm
/V)
Field (kV/cm)
Continuous film
4 m x 4 m cut capacitor
Epitaxial oxide thin film nanostructures fabricated by e-beam lithography which can be used for nanoscale piezoelectric characterization.
Longitudinal (d33) and Transverse (d31) piezoelectric responses of epitaxial piezoelectric PMN-PT film on Si is as good as PMN-PT bulk single crystals.