2sk4075 - 40v,60a

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MOS FIELD EFFECT TRANSISTOR

2SK4075SWITCHING

N-CHANNEL POWER MOS FET

DATA SHEET

Document No. D18223EJ2V0DS00 (2nd edition) Date Published September 2006 NS CP(K) Printed in Japan

The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications. ORDERING INFORMATION

PART NUMBER LEAD PLATING PACKING PACKAGE

2SK4075-ZK-E1-AY

2SK4075-ZK-E2-AY

Pure Sn (Tin) Tape

2500 p/reel

TO-252 (MP-3ZK)

typ. 0.27 g

FEATURES • Low on-state resistance

RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 30 A)

RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 15 A)

• Low Ciss: Ciss = 2900 pF TYP.

• Logic level drive type

ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 40 V

Gate to Source Voltage (VDS = 0 V) VGSS ±20 V

Drain Current (DC) (TC = 25°C) ID(DC) ±60 A

Drain Current (pulse) Note1 ID(pulse) ±180 A

Total Power Dissipation (TC = 25°C) PT1 52 W

Total Power Dissipation (TA = 25°C) PT2 1.0 W

Channel Temperature Tch 150 °C

Storage Temperature Tstg –55 to +150 °C

Single Avalanche Current Note2 IAS 28 A Single Avalanche Energy Note2 EAS 78 mJ

Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%

2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH

THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 2.4 °C/W

Channel to Ambient Thermal Resistance Rth(ch-A) 125 °C/W

(TO-252)

2006

Data Sheet D18223EJ2V0DS 2

2SK4075

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V 1 μA

Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA

Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V

Forward Transfer Admittance Note | yfs | VDS = 10 V, ID = 15 A 9.3 S

Drain to Source On-state Resistance Note RDS(on)1 VGS = 10 V, ID = 30 A 5.2 6.7 mΩ

RDS(on)2 VGS = 4.5 V, ID = 15 A 7.2 10 mΩ

Input Capacitance Ciss VDS = 10 V 2900 pF

Output Capacitance Coss VGS = 0 V 450 pF

Reverse Transfer Capacitance Crss f = 1 MHz 293 pF

Turn-on Delay Time td(on) VDD = 20 V 18 ns

Rise Time tr ID = 30 A 16 ns

Turn-off Delay Time td(off) VGS = 10 V 54 ns

Fall Time tf RG = 0 Ω 9 ns

Total Gate Charge QG VDD = 32 V 54 nC

Gate to Source Charge QGS VGS = 10 V 11 nC

Gate to Drain Charge QGD ID = 60 A 15 nC

Body Diode Forward Voltage Note VF(S-D) IF = 60 A, VGS = 0 V 0.9 1.5 V

Reverse Recovery Time trr IF = 60 A, VGS = 0 V 33 ns

Reverse Recovery Charge Qrr di/dt = 100 A/μs 33 nC

Note Pulsed

TEST CIRCUIT 3 GATE CHARGE

VGS = 20 → 0 VPG.

RG = 25 Ω

50 Ω

D.U.T.L

VDD

TEST CIRCUIT 1 AVALANCHE CAPABILITY

PG.

D.U.T.RL

VDD

TEST CIRCUIT 2 SWITCHING TIME

RG

PG.

IG = 2 mA

50 Ω

D.U.T.RL

VDD

IDVDD

IASVDS

BVDSS

Starting Tch

VGS

0

τ = 1 sDuty Cycle ≤ 1%

τ

VGSWave Form

VDSWave Form

VGS

VDS

10%0

0

90%

90%

90%

VGS

VDS

ton toff

td(on) tr td(off) tf

10% 10%

μ

<R>


2SK4075

TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA TOTAL POWER DISSIPATION vs.

CASE TEMPERATURE

dT

- Pe

rcen

tage

of R

ated

Pow

er -

%

0

20

40

60

80

100

0 25 50 75 100 125 150 175

TC - Case Temperature - °C

PT

- To

tal P

ower

Dis

sipa

tion

- W

0

10

20

30

40

50

60

0 25 50 75 100 125 150 175

TC - Case Temperature - °C

FORWARD BIAS SAFE OPERATING AREA

ID -

Dra

in C

urre

nt -

A

0.1

1

10

100

1000

0.1 1 10 100

1 ms

10 ms

ID(pulse)

ID(DC)

TC = 25°CSingle Pulse

RDS(on) Limited(VGS = 10 V)

Power DissipationLimited

PW = 100 μs

DC

VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

rth(t)

- Tr

ansi

ent T

herm

al R

esis

tanc

e - °

C/W

0.01

0.1

1

10

100

1000

Rth(ch-A) = 125°C/W

Rth(ch-C) = 2.4°C/W

Single Pulse

PW - Pulse Width - s

100 μ 1 m 10 m 100 m 1 10 100 1000


2SK4075

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS

ID

- D

rain

Cur

rent

- A

0

50

100

150

200

250

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

VGS = 10 V

Pulsed

4.5 V


ID

- D

rain

Cur

rent

- A

0.001

0.01

0.1

1

10

100

1 2 3 4 5

VDS = 10 VPulsed

150°C

75°C25°C

TA = −55°C

VGS - Gate to Source Voltage - V

GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE

FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT

VGS

(off)

- G

ate

Cut

-off

Vol

tage

- V

0

0.5

1

1.5

2

2.5

-100 -50 0 50 100 150 200

VDS = 10 VID = 1 mA

Tch - Channel Temperature - °C

| y

fs |

- For

war

d Tr

ansf

er A

dmitt

ance

- S

1

10

100

0.1 1 10 100

VDS = 10 VPulsed

TA = 150°C75°C25°C

−55°C

ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

DRAIN TO SOURCE ON-STATERESISTANCE vs. GATE TO SOURCE VOLTAGE

RDS

(on) -

Dra

in to

Sou

rce

On-

stat

e R

esist

ance

- m

Ω

0

5

10

15

20

25

30

0.1 1 10 100 1000

10 V

VGS = 4.5 V

Pulsed


RDS

(on) -

Dra

in to

Sou

rce

On-

stat

e R

esist

ance

- m

Ω

0

5

10

15

20

25

30

0 5 10 15 20

ID = 12 A

30 A60 A

Pulsed

VGS - Gate to Source Voltage - V


2SK4075

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO

SOURCE VOLTAGE

RD

S(on

) - D

rain

to S

ourc

e O

n-st

ate

Res

istan

ce -

mΩ

0

2

4

6

8

10

12

14

-100 -50 0 50 100 150 200

ID = 30 A, VGS = 10 V

ID = 15 A, VGS = 4.5 V

Tch - Channel Temperature - °C

C

iss,

Cos

s, C

rss -

Cap

acita

nce

- pF

10

100

1000

10000

0.1 1 10 100

C iss

C oss

C rss

VGS = 0 Vf = 1 MHz


SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS

td(

on),

tr, td

(off)

, tf -

Sw

itchi

ng T

ime

- ns

1

10

100

1000

0.1 1 10 100

VDD = 20 VVGS = 10 VRG = 0 Ω

td(off)

td(on)

tr

tf


VD

S -

Dra

in to

Sou

rce

Vol

tage

- V

0

5

10

15

20

25

30

35

40

0 20 40 600

2

4

6

8

10

12

ID = 60 APulsed

VDD = 32 V20 V

8 V

VDS

VGS

QG - Gate Chage - nC

VG

S -

Gat

e to

Sou

rce

Vol

tage

- V

SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DRAIN CURRENT

IF

- Dio

de F

orw

ard

Cur

rent

- A

0.1

1

10

100

1000

0 0.5 1 1.5

0 V

VGS = 10 V

Pulsed

VF(S-D) - Source to Drain Voltage - V

trr

- R

ever

se R

ecov

ery

Tim

e - n

s

1

10

100

0.1 1 10 100

di/dt = 100 A/μsVGS = 0 V



2SK4075

PACKAGE DRAWING (Unit: mm)

TO-252 (MP-3ZK)

6.5±0.2 2.3±0.10.5±0.1

0.76±0.12 0 to 0.250.5±0.1

1.0

No Plating

No Plating

5.1 TYP.1.

0 T

YP

.6.

1±0.

2

0.51

MIN

.4.0

MIN

.0.

8 10.4

MA

X. (

9.8

TY

P.)

4.3 MIN.

1

4

2 3

1.14 MAX.2.3 2.3

1. Gate2. Drain3. Source4. Fin (Drain)

EQUIVALENT CIRCUIT

Source

BodyDiodeGate

Drain

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.


2SK4075

TAPE INFORMATION There are two types (-E1, -E2) of taping depending on the direction of the device.

Reel sideDraw-out side

MARKING INFORMATION

Pb-free plating marking

K4075 Abbreviation of part number

Lot code

RECOMMENDED SOLDERING CONDITIONS The 2SK4075 should be soldered and mounted under the following recommended conditions.

For soldering methods and conditions other than those recommended below, please contact an NEC Electronics

sales representative.

For technical information, see the following website.

Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)

Soldering Method Soldering Conditions Recommended

Condition Symbol

Infrared reflow Maximum temperature (Package's surface temperature): 260°C or below

Time at maximum temperature: 10 seconds or less

Time of temperature higher than 220°C: 60 seconds or less

Preheating time at 160 to 180°C: 60 to 120 seconds

Maximum number of reflow processes: 3 times

Maximum chlorine content of rosin flux (percentage mass): 0.2% or less

IR60-00-3

Partial heating Maximum temperature (Pin temperature): 350°C or below

Time (per side of the device): 3 seconds or less

Maximum chlorine content of rosin flux: 0.2% (wt.) or less

P350

Caution Do not use different soldering methods together (except for partial heating).

2SK4075

The information in this document is current as of September, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document.NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information.While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features.NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application.

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M8E 02. 11-1

(1)

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"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries."NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).

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2sk4075 - 40v,60a

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