(3) (dekong zeng)lithography
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NANO-Lithography
Recent progress in high resolution lithography
Daniel Bratton, Da Yang, Junyan Dai and Christopher K. Ober*
Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA
All material gathered from Public Domain
Name : DEKONG ZENG
EE235 Spring 2007
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Outline
•Photo-Lithography
•Immersion Lithography
•EUV Lithography
•Two-Photon 3D Lithography
•NANO-imprint Lithography
•NANO-fabrication with Block Copolymers
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Roadmap for Lithography
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Photolithography
•Abbe (critical) illumination:
---intensity in each location on reticle is determined by corresponding location in light source 。
•Köhler illumination
---intensity in each location on reticle is integral local source intensities 。
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State of art Lithography
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Lithography Road Map
Cost of a stepper today: $20M!
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Liquid immersion lithography
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Improvement of immersion lithography
Improvements in resolution At same CD : improvements in DOF
The resolution enhancement from immersion lithography is therefore about 30-40% (depending on materials used), or about one technology node. The depth of focus, is also 40-70% better (proportional to the refractive index of the imaging medium considered) than a corresponding "dry" tool at the same resolution
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Immersion lithography system
Fluid: 193nm water
157nm polyfluoropolyether
high index fluids desired.
Immersion lithography: $30M!!
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Immersion lithography system
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Immersion lithography Defects
Contribution of Defects
Images of Defects
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Issues with Immersion Lithography
•Very big lenses (hence expensive) !!
• Field size reduction ?
•Mechanical issues and hydrodynamics
•Bubble formation disturbing the image
•Stage vibrations transferred to lens
• Heating of immersion liquid upon exposure
•New defect mechanisms at wafer level
• Interaction of photo resist with immersion liquid
•Fluid contamination
•Polarization effects degrading contrast
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EXTREME ULTRAVIOLET (EUV) Lithography
•A laser is directed at a jet of xenon gas. When the laser hits the xenon gas, it heats the gas up and creates a plasma. •Once the plasma is created, electrons begin to come off of it and it radiates light at 13 nanometers, which is too short for the human eye to see. •The light travels into a condenser, which gathers in the light so that it is directed onto the mask. •A representation of one level of a computer chip is patterned onto a mirror by applying an absorber to some parts of the mirror but not to others. This creates the mask. •The pattern on the mask is reflected onto a series of four to six curved mirrors, reducing the size of the image and focusing the image onto the silicon wafer. Each mirror bends the light slightly to form the image that will be transferred onto the wafer.
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(EUV) Lithography
Gas discharged plasma Laser produced plasma
This entire process has to take place in a vacuum because these wavelengths of light are so short that even air would absorb them. Additionally, EUVL uses concave and convex mirrors coated with multiple layers of molybdenum and silicon -- this coating can reflect nearly 70 percent of EUV light at a wavelength of 13.4 nanometers. The other 30 percent is absorbed by the mirror. Without the coating, the light would be almost totally absorbed before reaching the wafer. The mirror surfaces have to be nearly perfect; even small defects in coatings can destroy the shape of the optics and distort the printed
circuit pattern, causing problems in chip function.
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(EUV) Lithography Issues
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Step-and-Flash IMPRINT Lithography (SFIL)
Commerical nanoimprinter: $0.5-1.6M
•Lower forces: 100 kPa
•No heating, no cooling
•Longer lifetime, faster imprint
•Sub 5-nm demonstrated
Issues :
•Production of templates
•Defect control
•Small throughput
•Materials
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Two-Photon 3D Lithography 双光子三维微细加工
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NANO-fabrication with BLOCK COPOLYMERS
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Conclusion
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