a time-based readout circuit for tdi architectures in cmos image sensor

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LOGO A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor Zhu kun March 30th, 2013

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A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor. Zhu kun. March 30th, 2013. A Time-Based Readout Circuit for TDI Architecture in CMOS Image Sensor. Introduction. 1. Time-domain accumulator. 2. TDC architecture. 3. Conclusion. 4. 1. Introduction. - PowerPoint PPT Presentation

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Page 1: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

LOGO

A Time-Based Readout Circuit for TDI

Architectures in CMOS Image Sensor

A Time-Based Readout Circuit for TDI

Architectures in CMOS Image Sensor

Zhu kun

March 30th, 2013

Page 2: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

A Time-Based Readout Circuit for TDI Architecture in CMOS Image Sensor

Introduction1

TDC architecture

2 Time-domain accumulator

3

Conclusion4

Page 3: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

1. Introduction

space observation medical imaging machine vision

Line-array image sensors are widely used in many imaging applications. This special kind of image sensor can capture image information with a constant or predictable moving velocity by one line pixels in two dimensions mode. However, the exposure time of the pixels is limited by the scanning rate of the image sensor obviously. The reduction of the exposure time will degenerate the signal-to-noise ratio (SNR), especially in the dark environment and at high moving speed. The problem can be solved by the method of time-delay-integration (TDI). TDI is a method to effectively increase the integration time without changing the frame rate, resolution, and field-of-view.

Page 4: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

1. Introduction

Page 5: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

1. Introduction

Each pixel’s output signal will be accumulated by the integrator. The accumulation is in an analog domain mode. Finally, the accumulation signal after ADC processing, this signal processing meets the working mechanism of TDI and the enhancement of the SNR can be realized.

Analog domain accumulation mode

Page 6: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

1. Introduction

Each pixel’s output signal will be processed by the ADC Directly. Then the digital code accumulate in a form of digital codes. However, because the pixel signal’s voltage amplitude is very small, so it needs to be enlarged to quantified by the ADC. Finally, the signal codes were divided by the sum of the TDI depth to obtain a final codes. This signal processing is still essentially follow the working mechanism of the TDI.

Digital domain accumulation mode

Page 7: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

1. Introduction

The proposed readout circuit which can achieve less power consumption and high speed efficiently is promising alternative to the traditional readout circuits. The rest of this paper is organized as follows. Section II describes the architecture of the time accumulator circuit. The TDC(time-to-digital converter) will be discussed in Section III, and Section IV concludes this work.

Page 8: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

Top view of the TDI-CIS with Time-domain

Readout Circuit

1. The background

Time-domain Readout Circuit

Time Accumulator

TDC

Page 9: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

2. Time-domain accumulator

Main parts: 1.VCDL/VTC (Voltage-to-Time Converter)

2.PD(Phase Detector)

Proposed Circuits of one stage of accumulator

Page 10: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

Basic circuit of VCDU Symbolic input/output signal of VCDU

2. Time-domain accumulator

Page 11: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

To=Tin + GVin+ b

where G and b are the slope and the y-intercept of a line drawn through the linear region of the VCDU transfer characteristic

2. Time-domain accumulator

Page 12: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

2. Time-domain accumulator

Two differential voltage-controlled delay lines

Digital swing on the internal nodes of VCDL eliminates the static power consumption and makes it possible to reduce the supply voltage down to the minimally required level for digital logic to operate.

Page 13: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

2. Time-domain accumulator

Two configurable capacitor VCDL

The sizes are independently digitallycontrollable for both branches which additionally allows to do offset calibration.

C1 consists of binary scaled MOScapacitors with a resolution of 6 bit

C2 is configurable by only 3 bit

Page 14: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

2. Time-domain accumulator

The input node of the inverter, which is denoted by “Charge,” is precharged to the high level by reset (PH2). When a rising-edge signal comes to the input of the delay cell, the voltage-controlled current source begins to discharge the “Charge” node. The voltage goes down at a rate proportional to the current I(Vc). When the voltage falls below a threshold, the output of the inverter goes high. The delay is controlled by Vc, which comes from the S/H circuit. To have a large dynamic range, the intrinsic delay of the inverter is made much smaller than the time required to discharge its input node.

The VCDL with current source

Page 15: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

2. Time-domain accumulator

Several current starving devices with different gate bias voltages were used in parallel. This mitigates the compression of the pulse delay time versus input voltage characteristic at high input voltages. The additional parallel current starving devices also increase the voltage sensitivity of the VTC. The enhanced linearization scheme of the proposed VTC allows it to achieve over 200 mV of dynamic range where the slope is linear within 2% accuracy

Page 16: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

Tsig=Tclk + GVsig+ b

Trst=Tclk + GVrst+ b

ΔT1=Trst-Tsig =G(Vrst-Vsig)

One unit of VCDU accumulatorΔT2=Trst2-Tsig2 =ΔT1+G(Vrst2-Vsig2)

2. Time-domain accumulator

Page 17: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

2. Time-domain accumulator

The block of the time-domain accumulator

Page 18: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

2. Time-domain accumulator

Simulation result of the accumulator

Page 19: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

2. Time-domain accumulator

Timing diagrams of the time-domain accumulator

Page 20: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

3. TDC architecture

Illustration of TDC function

TDC is a widely used circuit in time measurement application. The time interval converted into the high accuracy digital codes directly.

Page 21: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

TDCTDC

1

2

3

4

5

Single-counter TDCSingle-counter TDC

Flash TDCFlash TDC

Vernier oscillator TDCVernier oscillator TDC

Cyclic TDCCyclic TDC

Cyclic pulse-shrinking TDCCyclic pulse-shrinking TDC

3. TDC architecture

Page 22: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

3. TDC architecture

Single-counter TDC.

In this converter, the input time interval ΔT between the rising edges of a start and a stop pulse is measured by a counter running on a high-frequency reference clock. The AND gate ensures that the counter is enabled only when Start and Stop are logically different. The resolution of this device is constrained by the speed of the reference clock and can be no higher than a single clock period. The constraints on the frequency and stability of on-chip clocks limit the application of this architecture.

Page 23: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

3. TDC architecture

Flash TDC

Flash TDCs are analogous to flash ADCs for voltage amplitude encoding and operate by comparing a signal edge with respect to various reference edges all displaced in time. The elements that compare the input signal to the reference are usually D-type flip-flops. Each buffer produces a delay equal to τ . To ensure that τ is known reasonably accurately, the delay chain is often implemented and stabilized by a DLL [7].

Page 24: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

3. TDC architecture

(a) Fine-resolution flash TDC adopting DLL. (b) Refining the time resolution by adopting Vernier delay line.

The drawback is that the temporal resolution can be no higher than the delay through a single gate in the semiconductor technology used.1.Suite for use in on-chip timing measurement systems2.Performing a measurement on every clock cycle 3.Can be operated at relatively high speeds. 4.They can easily be constructed in any standard CMOS process

Page 25: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

3. TDC architecture

Vernier oscillator TDC

It takes many cycles to complete a single measurement. Compared to flash converters that can make a measurement every cycle, the Vernier oscillator requires a long conversion time.

The use of the oscillators reduces the matching requirements on the delay buffers used to quantize a time interval. This feature is used to overcome the temporal uncertainties caused by component variation in the delay lines of Vernier delay flash TDCs.

Page 26: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

3. TDC architecture

Cyclic pulse-shrinking TDC Through the application of a time attenuator or pulse-shrinking circuit in a feedback loop, a TDC can be created [10]. An input pulse of width Win is reduced as it propagates around the feedback loop by some scale factor α; eventually, the pulse width disappears. As the rising edge of the pulse reaches a counter, a count is made until the pulse disappears, i.e., undetectable.

The number counted by the counter will be a representative of the input pulse width. Similar to the Vernier oscillator, there is a long conversion time requiredfor the cyclic pulse-shrinking TDC.

Page 27: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

3. TDC architecture

The concept of the Cyclic TDC

Page 28: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

3. TDC architecture

The schematic of the MDTC

Page 29: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

3. TDC architecture

Principle of time amplifier using SR latch delay characteristic

Conventional time amplifier

Page 30: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

3. TDC architecture

Cross coupled chains of variable delay cells

Page 31: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

4. Conclusion

In this paper, we design a time-based readout circuit for TDI architectures. A time-based adder and time to digital circuits were proposed. This implementation has demonstrated the advantage of time-based readout circuits, which achieve low power consumption, high speed.

Page 32: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor

2 1qCLKT

11

22

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4. Conclusion

2013.4.15 finish the patents of VTC and Time Amplifier

2013.4.30 finish simulation and write the paper

2013.5.30 finish the VTC or Time Amplifier paper

Page 33: A Time-Based Readout Circuit for TDI Architectures in CMOS Image Sensor