advanced mask inspection technologies for 22-nm and...
TRANSCRIPT
Advanced Mask Inspection Technologies for 22-nm and Beyond
KLA-Tencor CorporationReticle and Photomask Product Division
Motivation
Latest Reticle Inspection Advances
Latest EUV Inspection Results
EUV Actinic Patterned and Blank Mask Inspector Introduction
Summary
Agenda
Reticle and Photomask Product Division
Lithography History and Near Future
248nm193nm
365nm
180nm130nm
65nm
32nm
350nm
OPC
14nmOPC+
Immersion
wavelength (λ) NAi k1
10nm
45nm
optical
(k1 or λ)
22nm
Comp-Litho
90nmLitho λ
Logic Generation
7nm??
OPC++?
DPL
MPL?
EUV?
Reticle and Photomask Product Division
Mask Inspection Challenges for Advanced Node
Mask types – add EUV and quartz etch masks Optics – keep defect SNR high
high NA imaging at limitboost defect signal with illuminationreduce imaging noise
Database Modelingcomplex EUV, quartz etch, exotic OPCmore complex modeling – reduce errorshigher computational load – keep speed
Defect Detectorsnew defect types – local CD, shifted, stripes, etcmanage nuisance – mask processes challenged
Exotic OPC
EUV
Local CD
Reticle and Photomask Product Division
Motivation
Latest Reticle Inspection Advances
Latest EUV Inspection Results
EUV Actinic Patterned and Blank Mask Inspector Introduction
Summary
Agenda
Reticle and Photomask Product Division
Latest Reticle Inspection Advances
Flexible Imaging for high sensitivity
EUV compatible cleanliness
Noise reduction for false reduction
Teron 630 for ≥ 10nm / 1xhp Generation – Optical* and EUV
High accuracy stage*
Latest generation image computer and dataprep
EUV compatible reticle handling
EUV dual-pod load port
3rd generation database modeling
Defect detector advances
August-2013* 10nm generation optical reticles in development Reticle and Photomask Product Division
Latest Reticle Inspection Imaging Advances
• Flexible imaging conditions – NA, sigma, pupil, polarization
• Reduced aberrations, vibration, focus error• EUV demonstrated – applicable to optical
630 Flexible Apertures
630 Flexible Polarization
Imaging advances to boost defect signal / reduce noise
Std Imaging Adv Imaging
Std Adv
AdvAdv
Std Adv Adv
EUV Defect Types
EU
V D
efec
t Sig
nalUp to 50%
defect signal boost
Reticle and Photomask Product Division
Latest Database Modeling Advances
new Gen3 modeling for EUV, quartz etch, complex OPC
Advanced physics-based 3D modelingModels complex EUV and quartz etch illumination physicsLow errors for best defect detection SNR – find small defectsOptimized for high speed reticle inspection (10x10cm in ~2hr)Extendable to standard optical reticles with aggressive OPC
Gen2 modeling error Gen3 modeling error
EUV 14nm reticle
50%RMSlowererrors
Gen3 Initial release Gen3 2nd release
25 to 30% further noise reduction
Reticle and Photomask Product Division
Latest EUV Die-to-Die Algorithm Advances
New Advanced EUV Die-to-Die Algorithm developed
In-house testing completedRecent Beta site installation
Technical advances for die-to-dieOptimized imaging – OAI and polarizationNew autofocus method - reduces falseEUV defect detectors
Sensitivity expected to meet process development requirements
Previous Die-to-Die result
False issue
Advanceddie-to-die result
Reticle and Photomask Product Division
ML Phase Defect Location Accuracy Advances
Location Accuracy (nm) Timing Change Platform
~ 1000 - 3000 Q4 CY10 Initial capability 610
~ 200 - 250 Q2 CY11 2 pt alignment (plate rotation) 610
~ 100 -120 Q4 CY123 pt alignment, scale, ortho
compensation, template matching
610 / 630
~ 50 1H CY14 HW improvements 630
~ 30 1H CY15 Algorithm / sw development 630
Continuous improvements supporting industry needs
Reticle and Photomask Product Division
Motivation
Latest Reticle Inspection Advances
Latest EUV Inspection Results
EUV Actinic Patterned and Blank Mask Inspector Introduction
Summary
Agenda
Reticle and Photomask Product Division
Testing Program
Internal testing for beta start – completed Nov’1222nm / 14nm generation optical and EUV reticles15ea EUV reticles from 9ea reticle manufacturers
Field beta testing - started in Dec’12qualified for optical production Jan’13qualified for EUV die-to-database Mar’13inspect reticles with black borders May’13EUV die-to-die testing in progress – complete Sep’13
Continue testing as 10nm generation reticles are available
Reticle and Photomask Product Division
630 EUVdb 5-Sys Test – 56nm pitch hole
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
B
D
N
L
J
A
E
M
H
Stack: 50nm TaBN + 2nm TaBO PDM = Programmed Defect Mask * 5 consecutive inspections
12 14 19% area
7 10 11%
8 11 18
22 28 32
16 21 23%
12 18 23%
5 8 10%
12 15 19%
23 33 35
2D Under
1D Under
Multi 2D Under
Mis-place
Clr Ext
Clr Corner
630 EUVdb 100% Spec*All 5x2 100%*< 5x2 100%*
610 EUVdb 1x1 Test 100%*630 EUVdb Test*5ea 630 systems2ea KT PDMs Defect SEM Size, nm or % area
2D Over
1D Over
Multi 2D Over
Reticle and Photomask Product Division
EUV Die-to-die 2-Sys Test – 56nm pitch hole
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
B
D
N
L
J
A
E
M
H
Stack: 50nm TaBN + 2nm TaBO PDM = Programmed Defect Mask * 5 consecutive inspections
13 16% area
8%
11 12
20
20 23%
14 22%
8 9%
13 16%
23 28
2D Under
1D Under
Multi 2D Under
Mis-place
Clr Ext
Clr Corner
630 EUVdd 100% Spec*All 2x2 100%*< 2x2 100%*
630 EUVdd Test2ea 630 systems2ea KT PDMs
Defect SEM Size, nm or % area 14 defect types – 9 shown
2D Over
1D Over
Multi 2D Over
(not determined – in process)
Reticle and Photomask Product Division
EUV Die-to-DB, Die-to-Die Sensitivity Characterization
DD DB
Max sensitivity capability with <100 false/nuisance per run criteria
L/SExtrusion
large small
large small
large small
L/SIntrusion
L/SIntrusion
Die-to-Database shows its superior sensitivity
Defect type Design node (nm)
Designed defect size (nm)L/S 1:1 Ext. 11 10 9 8 7 6 5 4 3 2 1630 DD
20630 DB630 DD
24630 DB630 DD
30630 DB
Defect type Design node (nm)
Designed defect size (nm)L/S 1:1 Int. 11 10 9 8 7 6 5 4 3 2 1630 DD
20630 DB630 DD
24630 DB630 DD
30630 DB
Defect type Design node (nm)
Designed defect size (nm)L/S 1:2 Int. 11 10 9 8 7 6 5 4 3 2 1630 DD
20630 DB630 DD
24630 DB630 DD
30630 DB
100% captureModerate captureLow capture
Reticle and Photomask Product Division
Particle Mode Sensitivity Characterization
SiO2 on ML
SiO2 Size Defects Present Defect count Capture rate
90 nm 1785 1803 100%70 1925 1918 100%60 1809 1800 100%55 1996 2072 100%50 1910 1903 100%45 1929 1919 100%40 1614 1820 100%35 unknown 2007 High capture30 unknown 1633 High capture
SiO2 on ML – High capture rate down to 30 nm
Reticle and Photomask Product Division
Motivation
Latest Reticle Inspection Advances
Latest EUV Inspection Results
EUV Actinic Patterned and Blank Mask Inspector Introduction
Summary
Agenda
Reticle and Photomask Product Division
Lithography and Inspection WavelengthW
avel
engt
h (n
m)
Year
Litho @ 193-nm
5xx @ 257-nm
6xx @ 193-nm <Actinic>
Litho @ 13.5-nm
13.5-nm <Actinic>
NBA1 @ 193-nm
NBA2 @ <1-nm(eBeam)
EUVL presents unique challenges of Inspection strategy – Actinic or two extreme ends
Litho and Inspection wavelength shift
Reticle and Photomask Product Division
EUV Actinic Patterned Mask and Blank Inspection Tool
• EUV actinic inspection is a must for EUVL High Volume Manufacturing due to:– Phase defects– ML Blank defects– Contamination defects– Throughput– Through-pellicle inspection
7xx ProgramThe world’s only EUV Actinic Patterned Mask Inspection System
Reticle and Photomask Product Division
7xx Program Status
Actinic platform requirementsTarget node – 16-nm and 11-nm HP node
Target throughput – 2 to 5 hour inspection per mask
All defect types capture including Phase defects, ML Blank defects, Contamination defects which impact wafer patterning
Partnership in place to accelerate Actinic Patterned Mask Inspector production readiness
Reticle and Photomask Product Division
Motivation
Latest Reticle Inspection Advances
Latest EUV Inspection Results
EUV Actinic Patterned and Blank Mask Inspector Introduction
Summary
Agenda
Reticle and Photomask Product Division
• Latest DUV reticle inspector – 630 Series released and supporting early EUV defectivity learning
platform extensions planned for 10nm / 1xhp generation
EUV Actinic Patterned and Blank Mask Inspector development in progress with collaboration with key customers
target 7nm / 1xhp generation high volume manufacturing and below
Summary
Reticle and Photomask Product Division