advanced materials characterization at the micro- … · materials characterization - also the...
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Ehrenfried Zschech and Martin Gall | Fraunhofer IKTS Dresden | Germany |
ADVANCED MATERIALS CHARACTERIZATION AT THE
MICRO- AND NANOSCALE
BET-EU Consortium Meeting | University of Cambridge, 5/6 September 2016
Picture: NovaledPicture: Fraunhofer IPMS Picture: GLOBALFOUNDRIES
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Fraunhofer Institute for Ceramic Technologies and
Systems IKTS - Our Business Divisions
MATERIALS ANDPROCESSES
MECHANICAL AND AUTOMOTIVE ENGINEERING
ELECTRONICS ANDMICROSYSTEMS
ENERGYMATERIALS ANDPROCESS ANALYSIS
OPTICS
BIO- AND MEDICALENGINEERING
ENVIRONMENTAL ANDPROCESSENGINEERING
SYSTEMS
EXPERTISE
TECHNOLOG
Y
EXPERTISE
MATERIALS
EXPERTISE
MATERIALS
DIAGNOSTICS
Reliability and
Quality Assurance
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GLOBAL SOCIAL MEGATRENDS:SMART THINGS EVERYWHERE
Quelle
: iS
tockphoto
Climate change
Demographic change
Safe living and
working in megacities
Reduction and dynamic
product life cycles
GlobalizationIndividuality of
the markets
Knowledge-
based society
Mobility and
Energy Efficency
technical assistance,
biocompatible sensors,
Lab-on-Chip systems,
point-of-care diagnosis
Smart Grid,
power electronics,
high-voltage packaging
Sensor networks, Industry 4.0,
Cyber physical systems,…
electronics for product
tracking, copy protection
Internet of Things,
RFID-Integration
E-Mobility,
networked cars,
EMC, energy
efficient electronics
fast data
transmissionSecure electronic documents,
secure identification,
protection systems
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Micro- and Nanoelectronics:Explosion of complexity and application variety
Driving forces: Functionality, Mobility, Connectivity, Communication, Access to data, …Internet of things, Industry 4.0, …
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Scali
ng
: M
ore
Mo
ore
Bas
eli
ne
CM
OS
: C
PU
, M
em
ory
, L
og
ic
130nm
90nm
65nm
45nm
32nm
22nm
Beyond CMOS
Functional Diversification: More than Moore
Analog/RF Passives HV PowerSensors
Actuators
Biochips
Fluidics
Information
Processing
Digital content &
System-on-Chip
(SoC)
Interacting with people and environment
Non-digital content &
System-in-Package (SiP)
New processes
and new materials
Perspectives for IT industry and nanoelectronics: Scaling
„More Moore“ and functional diversification „More than
Moore“
From International Technology Roadmap for Semiconductors: http://www.itrs.net
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Materials characterization - also the determination of micro-and nanomechanical properties of materials – is key for success of advanced applications
■ Market (Global Megatrends, Lifestyle, …)
■ Societal Challenges
■ Industrial Leadership and Competitiveness
Advanced Technologies and Materials for Innovative Products
Materials characterization for development and manufacturing of innovative products
… Technology and Product Development
… Process Control
… Quality Control and Reliability Engineering
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Mechanical properties of thin film materials, reliability andstability assessment
o Delamination characterization and crack propagation studies
o Integration of advanced, new materials into the new technological application
(influence of process-related issues, interfaces, compositional gradients)
o Thermomechanical parameters such as Young‘s modulus and hardness of
various thin film materials in the process (isolators, metals, electronic device
components, “smeared composite stacks“, etc.)
o Fracture toughness of thin films
o Plus further issues as the technology advances
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www.mentor.com© 2012 Mentor Graphics Corp. Company Confidential
Mechanical stress caused by IC architecture and packaging impacting MOSFET characteristics/performance and product reliability
Future trends: 3D integration and thin substrates / dies
Courtesy: Valeriy Sukharev, Mentor Graphics
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Relentless Reduction of Phone Thickness: ~ 5mm ?
Driving Merciless Reduction in Component Thickness: ~ 0.5mm ?
Driving Merciless Reduction in Si thickness: ~ 0.05mm ?
Future trends: Mobile phones “thin is in”
Courtesy: Riko Radojcic, Qualcomm
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Die thinness = The new issue
64GB NAND iPad
4
50u thin Wafer
Die
Th
ickn
ess (
µm
)
0
50
100
150
200
250
Apple Samsung Qualcomm Allwinner MediaTek Huawei
Mobile Application Processor Die Thickness (µm)
0
100
200
300
400
500
600
Core i5 ATOM Z3740 HASWELL i5-4250U Broadwell-Y
Intel Processor Die Thickness (µm)
in Ultrabook and Mobile Application
Die
Th
ickn
ess (
µm
)
Si is getting awfully thin
As processed wafer : ~ 775 um
Intel ultrabook and mobile application: ~ 200 µm – 500 um
Mobile chips: ~ 85µm ~ 200µm
PoP
<50u
~100u
Courtesy: Riko Radojcic, Qualcomm
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Sensitivity of carrier mobility to stress effects is an
exponential function (increased for thinner silicon)!
Region of very high sensitivity of carrier mobility on stress
3D stacks= “canary in the mine”
Future trends: Effect of extremely thin dies for mobile applications (3D stacking technology) and effect on transistor performance
Courtesy: Riko Radojcic, Qualcomm
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In-situ SEM/FIB Tester PI87
• Electrical measurements
• FIB, EDX, EBSD
Zeiss Nvision 40
In-situ TEM
Tester PI95
• Heating
• Electrical
measurements
Zeiss Libra 200
Xradia nanoXCT-100
(now Carl Zeiss Ultra)
In-situ nanoXCT Tester
(Fraunhofer IKTS Dresden)
• Heating
• Different atmospheres
In-situ mechanical studies and multi-scale imaging
@ Fraunhofer IKTS Dresden
TriboIndenter
TI950
• Nano-/Micro-
indenter
• Tribological
tester
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Probe and Sample Geometries: Nanoindentation
Probe geometries
Berkovich Sphere
Cube corner Flat punch
Sample geometries
Materials microstructure Small Features
Thin Films
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Hardness and Modulus Mapping
Courtesy of Hysitron Inc.
Hardness map Young’s modulus map
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Normal and Lateral Loaded Experiments, Tribological
Testing
Poisson‘s ratio determination
Tribologicaltesting
Scratch tests (film adhesion, scratch hardness, …)
Wear studies-25
-20
-15
-10
-5
0
5
10
15
20
25
0 2 4 6 8
Tie
fe/n
m
x/µm
SPM scan of a Scratch test
SPM scan of a Wear test
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In-Situ SEM/FIB Mechanical Testing
Zeiss Nvision 40
Hysitron PI87Micropillar compression for stress/strain
determination
Access to EDX, EBSD, FIB, and electrical testing
Multiphysical materials property mapping (also 3D using FIB)
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In-Situ TEM Mechanical Testing
Zeiss Libra 200
Hysitron PI95 Push-to-Pull device for tensile tests
Heating stage (400°C)
Courtesy of Hysitron Inc.
Compression of a CdS particle (abrasive)
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In-situ nanoXCT Mechanical Testing
additional heating stage
Reaction/atmosphere
chamber
Xradia nanoXCT-100 (now Carl Zeiss Ultra)
Custom built mechanical tester
Compression of an Al2O3 particle
Crack propagation in polymer composite film
In-situ DCB adhesion tester
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Quantitative Adhesion Measurement Techniques
Four Point Bending Double Cantilever Beam
DTS
Delamination Tool
DCB test with optical setup
crack length
independent
data analysis
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Fracture Modes
Mode I Mode II Mode III
4 Point Bend
Double Cantilever Beam
New geometries to be developed
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“Twister Concept”
mixed mode loading (I, II + III)
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Multi-Scale Materials Database for Full-System Simulation
and Process Optimization
Definition and development of a
multiscale materials database as
an input for simulations to
optimize for yield, quality,
performance and reliability
Yield, quality, performance and
reliability optimization
Overview of dimensions and
characterization methods needed
for the development of the multi-
scale materials database
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Scanning Electron Microscopy (Zeiss Nvision 40)
Destructive and nondestructive analysis of
wafers, dies, components and modules
• Cross sections by cleaving or grinding and
polishing
• Top-down delayering and imaging
• Materials analysis using EDX
• Low Energy T-SEM (<30keV)
SEM imaging
In-Situ T-SEM imaging
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Focused Ion Beam (Zeiss Nvision 40)
Examples of applications
• Site specific FIB cross
section (a)
• TEM lamella
preparation,
liftout (b)
• Channeling contrast of
polycrystalline
materials (c)
• Micromachining
• Circuit modification
• Plus various other
options…
3d-Bilda
a
b
c
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Nanoprober in the SEM and EDX (elemental mapping)
-5,00-4,00-3,00
-2,00-1,000,001,00
-10-9-8-7-6-5-4-3-2-1 0 1 2 3 4 5 6 7 8 910
Voltage (V)
current (µA)
Nanoprober: Measurement of I-V-
Characteristics, Lift out preparationEDX: Element Mapping (e.g. solder bump)
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Transmission Electron Microscopy (Zeiss Libra 200 MC Cs
STEM)
Highest resolution up to lattice imaging
• TEM and STEM for structural
investigations
• EDX and EELS for elemental analysis
and chemical binding states
• Tomography for 3D-observations
• In-situ techniques for electrical,
mechanical and thermal experiments Imaging of Graphene in atomic
resolution.
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Elemental Analysis with Subnanometer Resolution
EELS-analysis along a line, sectioning a layered
stack in a microelectronic device
a) STEM-image for definition of
ROI and drift correction
b) Series of spectra
c) Single spectrum in SiOxNy
a
b
c
N-edge
O-edge
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X-Ray Microscopy & Computed Tomography
Zeiss/Xradia nano-XCT:
• Resolution (nominal Pixel Size):
large field of view: 65 nm
high resolution: 30 nm
• Imaging, Mosaic, Tomography
• Absorption contrast
• Development of next generation
X-ray lenses
Imaging 3D microelectronic structures, e.g. identification of Cu
(orange) and AgSn solder (blue) in the volume (3D stack)
20µm
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Thank you!
Contact: [email protected]
Picture: NovaledPicture: Fraunhofer IPMS Picture: GLOBALFOUNDRIES