alessandro marras, ilaria de munari, davide vescovi, paolo ciampolini università di parma...
TRANSCRIPT
![Page 1: Alessandro Marras, Ilaria De Munari, Davide Vescovi, Paolo Ciampolini Università di Parma Performance Evaluation of Ultrathin gate oxide CMOS Circuits](https://reader036.vdocuments.net/reader036/viewer/2022062619/5519b8c15503466f578b48bf/html5/thumbnails/1.jpg)
Alessandro Marras, Ilaria De Munari, Davide Vescovi, Paolo Ciampolini
Università di Parma
Performance Evaluation
of Ultrathin gate oxide
CMOS Circuits
![Page 2: Alessandro Marras, Ilaria De Munari, Davide Vescovi, Paolo Ciampolini Università di Parma Performance Evaluation of Ultrathin gate oxide CMOS Circuits](https://reader036.vdocuments.net/reader036/viewer/2022062619/5519b8c15503466f578b48bf/html5/thumbnails/2.jpg)
Outline
Simulation models Designed circuit Circuit analysis
Conclusions
Power dissipation Logic Swing and Noise Margin Frequency
![Page 3: Alessandro Marras, Ilaria De Munari, Davide Vescovi, Paolo Ciampolini Università di Parma Performance Evaluation of Ultrathin gate oxide CMOS Circuits](https://reader036.vdocuments.net/reader036/viewer/2022062619/5519b8c15503466f578b48bf/html5/thumbnails/3.jpg)
Technology
Starting technology LETI Minimum channel
length 50nm Supply voltage 1.5V Measurement performed
on Lot 6564 wafer12 in Udine University
Projected technologies Oxide thickness from
1.5nm down to 0.9nm Supply voltage from
1.5V down to 0.9V
![Page 4: Alessandro Marras, Ilaria De Munari, Davide Vescovi, Paolo Ciampolini Università di Parma Performance Evaluation of Ultrathin gate oxide CMOS Circuits](https://reader036.vdocuments.net/reader036/viewer/2022062619/5519b8c15503466f578b48bf/html5/thumbnails/4.jpg)
Simulation model
Physical (DESSIS) simulation Projection to different
tox
comparison to ideal device
Circuit model EKV non-gate-
permeable core HDL correction blocks
Compact circuit model
Physical device model
![Page 5: Alessandro Marras, Ilaria De Munari, Davide Vescovi, Paolo Ciampolini Università di Parma Performance Evaluation of Ultrathin gate oxide CMOS Circuits](https://reader036.vdocuments.net/reader036/viewer/2022062619/5519b8c15503466f578b48bf/html5/thumbnails/5.jpg)
Device model vs. measurements
0,0 0,5 1,0 1,5
0
10
20
30
40
5060
70
80
I G (
nA)
VG (V)
measurement simulation
VDS
0,0 0,5 1,0 1,5
0,0
0,5
1,0
1,5 measurement simulation
VDS
VG (V)
I D (
mA
)
![Page 6: Alessandro Marras, Ilaria De Munari, Davide Vescovi, Paolo Ciampolini Università di Parma Performance Evaluation of Ultrathin gate oxide CMOS Circuits](https://reader036.vdocuments.net/reader036/viewer/2022062619/5519b8c15503466f578b48bf/html5/thumbnails/6.jpg)
Ring oscillator
101 stages Gate-current effects from reasonably-sized
devices (200nm X 10m) Gate current => CMOS architecture no
longer “ratioless” NAND gate: both static and dinamic analysis
![Page 7: Alessandro Marras, Ilaria De Munari, Davide Vescovi, Paolo Ciampolini Università di Parma Performance Evaluation of Ultrathin gate oxide CMOS Circuits](https://reader036.vdocuments.net/reader036/viewer/2022062619/5519b8c15503466f578b48bf/html5/thumbnails/7.jpg)
tox (nm) P (W) LS (V) f (MHz)
1.5 8.4 1.488 28.7
1.3 14.7 1.486 45.0
1.1 20.0 1.486 54.2
0.9 23.6 1.486 55.8
Ideal circuit performance
Waveforms
Period shorteningVOH lowering
VOL rising
Power dissipation increase
![Page 8: Alessandro Marras, Ilaria De Munari, Davide Vescovi, Paolo Ciampolini Università di Parma Performance Evaluation of Ultrathin gate oxide CMOS Circuits](https://reader036.vdocuments.net/reader036/viewer/2022062619/5519b8c15503466f578b48bf/html5/thumbnails/8.jpg)
Power consumption
P = <Preal> - <Pideal >
Ps = (IG,n + IG,p) · Vdd /2
Static Power consumption due to gate current
0,9 1,1 1,3 1,5
0,1
1
10
100
P Ps
P, P
s (
W)
tox
(nm)
VH
![Page 9: Alessandro Marras, Ilaria De Munari, Davide Vescovi, Paolo Ciampolini Università di Parma Performance Evaluation of Ultrathin gate oxide CMOS Circuits](https://reader036.vdocuments.net/reader036/viewer/2022062619/5519b8c15503466f578b48bf/html5/thumbnails/9.jpg)
9
Power consumption
Power consumption increase, reduced by scaling down supply voltage
Solution: oxynitride / high–k dielectric
0,9 1,1 1,3 1,50,01
0,1
1
10
100
1000
0,01
0,1
1
10
100
1000
P I
G
I G (A
)
P (W
)
tox
(nm)
0,9 1,1 1,3 1,510
100
1000
10
100
1000
I G (A
)
Vdd (V)P
(W
)
P IG
![Page 10: Alessandro Marras, Ilaria De Munari, Davide Vescovi, Paolo Ciampolini Università di Parma Performance Evaluation of Ultrathin gate oxide CMOS Circuits](https://reader036.vdocuments.net/reader036/viewer/2022062619/5519b8c15503466f578b48bf/html5/thumbnails/10.jpg)
Logic Swing degradation
Logic Swing degradation, reduced by scaling down supply voltage
0,9 1,1 1,3 1,510
-5
10-4
10-3
10-2
10-1
100
101
102
103
10-2
10-1
100
101
102
103
104
105
106
LS IG
I G (A
)
LS
(mV
)
tox (nm)
0,9 1,1 1,3 1,51E-5
1E-4
1E-3
0,01
0,1
1
1E-5
1E-4
1E-3
0,01
0,1
1
I G (
A)
Vdd (V)L
S (
V) LS
IG
![Page 11: Alessandro Marras, Ilaria De Munari, Davide Vescovi, Paolo Ciampolini Università di Parma Performance Evaluation of Ultrathin gate oxide CMOS Circuits](https://reader036.vdocuments.net/reader036/viewer/2022062619/5519b8c15503466f578b48bf/html5/thumbnails/11.jpg)
Noise Margin Reduction
Logic Swing reduction
Noise Margin reduction
0,9 1,1 1,3 1,5300
400
500
600
700
ideal case real case
high NM
low NM
Noi
se M
argi
n (m
V)
tox
(nm)
![Page 12: Alessandro Marras, Ilaria De Munari, Davide Vescovi, Paolo Ciampolini Università di Parma Performance Evaluation of Ultrathin gate oxide CMOS Circuits](https://reader036.vdocuments.net/reader036/viewer/2022062619/5519b8c15503466f578b48bf/html5/thumbnails/12.jpg)
Logic Swing degradation
VH
VL
0,9 1,1 1,3 1,51,301,321,341,361,381,401,421,441,461,481,50
tox
(nm)
LS
(V
) single stage chain
![Page 13: Alessandro Marras, Ilaria De Munari, Davide Vescovi, Paolo Ciampolini Università di Parma Performance Evaluation of Ultrathin gate oxide CMOS Circuits](https://reader036.vdocuments.net/reader036/viewer/2022062619/5519b8c15503466f578b48bf/html5/thumbnails/13.jpg)
Frequency shift
Frequency shift, reduced by scaling down supply voltage
0,9 1,1 1,3 1,50,01
0,1
1
10
f (M
Hz)
tox
(nm)
0,9 1,1 1,3 1,51
2
3
4
5
6
Vdd (V)f
(M
Hz)
![Page 14: Alessandro Marras, Ilaria De Munari, Davide Vescovi, Paolo Ciampolini Università di Parma Performance Evaluation of Ultrathin gate oxide CMOS Circuits](https://reader036.vdocuments.net/reader036/viewer/2022062619/5519b8c15503466f578b48bf/html5/thumbnails/14.jpg)
Frequency shift
Complex transient due to: Additional currents
tunneling through gate oxide
Reduced Logic Swing
Global effect observed: Frequency increase
Vi-1Vi Vi+1
IDp IGp
IGnIDn C
VL VH
![Page 15: Alessandro Marras, Ilaria De Munari, Davide Vescovi, Paolo Ciampolini Università di Parma Performance Evaluation of Ultrathin gate oxide CMOS Circuits](https://reader036.vdocuments.net/reader036/viewer/2022062619/5519b8c15503466f578b48bf/html5/thumbnails/15.jpg)
Conclusions
Compact circuit model developed: Based on physical model Good fitting with measurements
Effects of direct-tunneling current investigated: Power consumption increase Logic swing and noise margin degradation Frequency shift
Circuit maintains its functionality, but with some non- negligible performance degradations
Within the investigated range, permeable-gate devices seems to be suitable for practical applications