2sk4075 - 40v,60a
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The information in this document is subject to change without notice. Before using this document, pleaseconfirm that this is the latest version.Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SK4075SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D18223EJ2V0DS00 (2nd edition) Date Published September 2006 NS CP(K) Printed in Japan
The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications. ORDERING INFORMATION
PART NUMBER LEAD PLATING PACKING PACKAGE
2SK4075-ZK-E1-AY
2SK4075-ZK-E2-AY
Pure Sn (Tin) Tape
2500 p/reel
TO-252 (MP-3ZK)
typ. 0.27 g
FEATURES • Low on-state resistance
RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 15 A)
• Low Ciss: Ciss = 2900 pF TYP.
• Logic level drive type
ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 40 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ±60 A
Drain Current (pulse) Note1 ID(pulse) ±180 A
Total Power Dissipation (TC = 25°C) PT1 52 W
Total Power Dissipation (TA = 25°C) PT2 1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current Note2 IAS 28 A Single Avalanche Energy Note2 EAS 78 mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 2.4 °C/W
Channel to Ambient Thermal Resistance Rth(ch-A) 125 °C/W
(TO-252)
2006
Data Sheet D18223EJ2V0DS 2
2SK4075
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V 1 μA
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA
Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V
Forward Transfer Admittance Note | yfs | VDS = 10 V, ID = 15 A 9.3 S
Drain to Source On-state Resistance Note RDS(on)1 VGS = 10 V, ID = 30 A 5.2 6.7 mΩ
RDS(on)2 VGS = 4.5 V, ID = 15 A 7.2 10 mΩ
Input Capacitance Ciss VDS = 10 V 2900 pF
Output Capacitance Coss VGS = 0 V 450 pF
Reverse Transfer Capacitance Crss f = 1 MHz 293 pF
Turn-on Delay Time td(on) VDD = 20 V 18 ns
Rise Time tr ID = 30 A 16 ns
Turn-off Delay Time td(off) VGS = 10 V 54 ns
Fall Time tf RG = 0 Ω 9 ns
Total Gate Charge QG VDD = 32 V 54 nC
Gate to Source Charge QGS VGS = 10 V 11 nC
Gate to Drain Charge QGD ID = 60 A 15 nC
Body Diode Forward Voltage Note VF(S-D) IF = 60 A, VGS = 0 V 0.9 1.5 V
Reverse Recovery Time trr IF = 60 A, VGS = 0 V 33 ns
Reverse Recovery Charge Qrr di/dt = 100 A/μs 33 nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
VGS = 20 → 0 VPG.
RG = 25 Ω
50 Ω
D.U.T.L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50 Ω
D.U.T.RL
VDD
IDVDD
IASVDS
BVDSS
Starting Tch
VGS
0
τ = 1 sDuty Cycle ≤ 1%
τ
VGSWave Form
VDSWave Form
VGS
VDS
10%0
0
90%
90%
90%
VGS
VDS
ton toff
td(on) tr td(off) tf
10% 10%
μ
<R>
Data Sheet D18223EJ2V0DS 3
2SK4075
TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT
- Pe
rcen
tage
of R
ated
Pow
er -
%
0
20
40
60
80
100
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
PT
- To
tal P
ower
Dis
sipa
tion
- W
0
10
20
30
40
50
60
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
ID -
Dra
in C
urre
nt -
A
0.1
1
10
100
1000
0.1 1 10 100
1 ms
10 ms
ID(pulse)
ID(DC)
TC = 25°CSingle Pulse
RDS(on) Limited(VGS = 10 V)
Power DissipationLimited
PW = 100 μs
DC
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t)
- Tr
ansi
ent T
herm
al R
esis
tanc
e - °
C/W
0.01
0.1
1
10
100
1000
Rth(ch-A) = 125°C/W
Rth(ch-C) = 2.4°C/W
Single Pulse
PW - Pulse Width - s
100 μ 1 m 10 m 100 m 1 10 100 1000
Data Sheet D18223EJ2V0DS 4
2SK4075
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS
ID
- D
rain
Cur
rent
- A
0
50
100
150
200
250
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VGS = 10 V
Pulsed
4.5 V
VDS - Drain to Source Voltage - V
ID
- D
rain
Cur
rent
- A
0.001
0.01
0.1
1
10
100
1 2 3 4 5
VDS = 10 VPulsed
150°C
75°C25°C
TA = −55°C
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
VGS
(off)
- G
ate
Cut
-off
Vol
tage
- V
0
0.5
1
1.5
2
2.5
-100 -50 0 50 100 150 200
VDS = 10 VID = 1 mA
Tch - Channel Temperature - °C
| y
fs |
- For
war
d Tr
ansf
er A
dmitt
ance
- S
1
10
100
0.1 1 10 100
VDS = 10 VPulsed
TA = 150°C75°C25°C
−55°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATERESISTANCE vs. GATE TO SOURCE VOLTAGE
RDS
(on) -
Dra
in to
Sou
rce
On-
stat
e R
esist
ance
- m
Ω
0
5
10
15
20
25
30
0.1 1 10 100 1000
10 V
VGS = 4.5 V
Pulsed
ID - Drain Current - A
RDS
(on) -
Dra
in to
Sou
rce
On-
stat
e R
esist
ance
- m
Ω
0
5
10
15
20
25
30
0 5 10 15 20
ID = 12 A
30 A60 A
Pulsed
VGS - Gate to Source Voltage - V
Data Sheet D18223EJ2V0DS 5
2SK4075
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
RD
S(on
) - D
rain
to S
ourc
e O
n-st
ate
Res
istan
ce -
mΩ
0
2
4
6
8
10
12
14
-100 -50 0 50 100 150 200
ID = 30 A, VGS = 10 V
ID = 15 A, VGS = 4.5 V
Tch - Channel Temperature - °C
C
iss,
Cos
s, C
rss -
Cap
acita
nce
- pF
10
100
1000
10000
0.1 1 10 100
C iss
C oss
C rss
VGS = 0 Vf = 1 MHz
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS
td(
on),
tr, td
(off)
, tf -
Sw
itchi
ng T
ime
- ns
1
10
100
1000
0.1 1 10 100
VDD = 20 VVGS = 10 VRG = 0 Ω
td(off)
td(on)
tr
tf
ID - Drain Current - A
VD
S -
Dra
in to
Sou
rce
Vol
tage
- V
0
5
10
15
20
25
30
35
40
0 20 40 600
2
4
6
8
10
12
ID = 60 APulsed
VDD = 32 V20 V
8 V
VDS
VGS
QG - Gate Chage - nC
VG
S -
Gat
e to
Sou
rce
Vol
tage
- V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DRAIN CURRENT
IF
- Dio
de F
orw
ard
Cur
rent
- A
0.1
1
10
100
1000
0 0.5 1 1.5
0 V
VGS = 10 V
Pulsed
VF(S-D) - Source to Drain Voltage - V
trr
- R
ever
se R
ecov
ery
Tim
e - n
s
1
10
100
0.1 1 10 100
di/dt = 100 A/μsVGS = 0 V
ID - Drain Current - A
Data Sheet D18223EJ2V0DS 6
2SK4075
PACKAGE DRAWING (Unit: mm)
TO-252 (MP-3ZK)
6.5±0.2 2.3±0.10.5±0.1
0.76±0.12 0 to 0.250.5±0.1
1.0
No Plating
No Plating
5.1 TYP.1.
0 T
YP
.6.
1±0.
2
0.51
MIN
.4.0
MIN
.0.
8 10.4
MA
X. (
9.8
TY
P.)
4.3 MIN.
1
4
2 3
1.14 MAX.2.3 2.3
1. Gate2. Drain3. Source4. Fin (Drain)
EQUIVALENT CIRCUIT
Source
BodyDiodeGate
Drain
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Data Sheet D18223EJ2V0DS 7
2SK4075
TAPE INFORMATION There are two types (-E1, -E2) of taping depending on the direction of the device.
Reel sideDraw-out side
MARKING INFORMATION
Pb-free plating marking
K4075 Abbreviation of part number
Lot code
RECOMMENDED SOLDERING CONDITIONS The 2SK4075 should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method Soldering Conditions Recommended
Condition Symbol
Infrared reflow Maximum temperature (Package's surface temperature): 260°C or below
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
IR60-00-3
Partial heating Maximum temperature (Pin temperature): 350°C or below
Time (per side of the device): 3 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
P350
Caution Do not use different soldering methods together (except for partial heating).
2SK4075
The information in this document is current as of September, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document.NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information.While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features.NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application.
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