chong yun kang - kisti · 2018. 11. 8. · piezoelectric ceramics & processing piezoelectric...

Chong Yun Kang

1Electronic Materials Research Center, KIST2KU‐KIST Graduate School of Converging Science and Technology, Korea University

cykang@kist.re.kr

제4회 압전발전 지식연구회2013. 12. 2

1917The ultrasonic submarine detector by P. Langevin

Sonar

1880 First discovery by Pierre and Jacques Curie

Microphones, Accelerometers, Ultrasonic transducers, Bender element actuators, Phonograph pick-ups, Signal filters, etc.

1941BaTiO3

1954PZT

PZT free of patent restrictionsSAW filter, Ultrasonic motor

High resolution stage, Ultrasonic medical diagnosis, inkjet micropump, Diesel fuel injector

Piezoelectric Energy harvesting,Convergence

5

Direct piezoelectric effect

Pi = dijkTjk

Inverse piezoelectric effect

Sij = dkijEk

Piezoelectric effect ;Mechanical Energy⇔Electrical Energy

7

Perovskite crystal structure

▪ BaTiO3, Pb(Zr0.5Ti0.5)O3

Functions Applications

Electrical

Mechanical

Ultrasonic generationSound GenerationActuator

Ultrasonic generator,HumidifierSpeaker, BuzzerUltrasonic motor, Positioner

Mechanical

Electrical

High Voltage generationReceiving of Sound, Ultrasonic wave Sensor

IgnitorHydrophone, MicrophoneAccelerometer, Gyrometer,AE sensor

Electrical

Mechanical

Electrical

Electrical signal processingDetection of distance Transformation of voltage

Filter, ResonatorSONAR, Ultrasonic probeTransformer

10

Large Displacement (Sensitivity = Displacement / Driving Power) Good Positioning Reproducibility High Resolution, Quick Response (0.1ms), Low Power Consumption Large Generative Force (3kg/mm2) and Destruction Strength Small Size and Weight No Degradation / Aging in Usage No Bad Effects toward the Outside (Mechanical Noise, Heat,

Electromechanical Noise etc)

Actuator ; Transducers capable of transduction an input energy into a mechanical

output energy (displacement/force)

11

1982: Sashida

1975: Vishnevsky

1985: Sashida

1942: Williams & Brown

1973: Barth

1981: Vasiljev

2000: ASMO

2005: Nanomotion

2003:KIST1992: Nanomotion

1987: Shinsei USR-60

2003: Elliptec

Piezoelectric Ceramics & ProcessingPiezoelectric Low Temperature Co‐fired Ceramics (LTCC) LTCC‐MLC and Screen printing thick film technologies

Piezoelectric Multi‐layer ActuatorsBender and stack typesSi‐based MEMS piezoelectric actuators

ApplicationsPiezoelectric ValvesPiezoelectric micro‐pumps

한국 등록 0612800한국 등록 0586305한국 등록 485596

한국 등록 0751289한국 등록 10-0844432

mm range Piezoelectric Motor3‐8 mm diameter motors with relatively high torque.

Piezoelectric disk transducers Fractural vibration modeSIDM (Smooth Impact Drive Mechanism)

ApplicationsCamera module actuator (AF, Zoom, OIS)Braile module

Features20 mm/s and 15 g∙f (3.5 mm diameter)30 mm/s and 50 g∙f (5.0 mm diameter)

한국 등록 0698438미국 등록 7,567,017일본 등록 4188967

Alumina Tip

Stainless Steel

PZT

V0 COS(wt)

V0 SIN(wt) V0 COS(wt)

V0 SIN(wt)

X

Y

1

2

3

4

PZT

14

한국 등록 10-965433

Application FieldsMicromanipulation Stage, Semiconductor Equip.Robot Eye, etc

Butterfly Piezoelectric Linear MotorLow profile with relatively high torqueSuperposition of two piezoelectric transducersFlexural vibration modeTraveling wave type

ApplicationsCamera module actuator (AF, Zoom, OIS)Nano Stage

Features30 mm/s and 50 g∙f (4 × 5 mm2)80 mm/s and 200 g∙f (8 × 9 mm2)

한국 등록 0817470미국 등록 8,013,496

Light (optical)

Motion and vibration (mechanical)

Radio frequency (electromagnetic)

Heat (thermal)

Source: Adrian Valenzuela17

Thermoelectric

Photovoltaic Electromagnetic

Piezoelectric

17

Resonance type Impact Type

• Discontinuous, intermittent vibration source, Impact force• Ex) Human motion, walking, wind, rain drop etc.

• Frequency tuning is unnecessary• Piezoelectric bulk disk, cymbal harvesteretc.

Piezoelectric Energy Harvester

Piezoelectrics

• Continuous vibration source.• Ex) Engine vibrations, pipe vibrations etc.• Frequency tuning is necessary for resonance.

• Cantilever energy harvester.

Piezoelectrics

Vibration, Stress

Impact force

18

Electrical - ElectricalCoupling

Vibration, Stress

Mechanical - ElectricalCoupling

Mechanical - MechanicalCoupling

Electric Rectifying CircuitMechanical Energy Electrical

Impedance MatchingPiezoelectric

MaterialsStructure Modification,

Resonance Tunning

V

Rectifying

Battery or LoadPiezoelectrics

19

Market Sector Units 2010 2011 2012 2013 2014 2015CAGR(2010-2015)

Consumer & industial

( $ Millions) $1,929 $2,403 $2,916 $4,305 $6,773 $9,500 37.60%

Source: Pike Research

$0

$1,000

$2,000

$3,000

$4,000

$5,000

$6,000

$7,000

$8,000

$9,000

$10,000

2010 2011 2012 2013 2014 2015

($ M

illio

ns)

Energy Harvestinig Revenue, World Markets : 2010-2015

20

Source: Pike Research

Percentage Market Share of Consumer Devices, World Markets: 2015

Percentage Market Share of Industrial Devices, World Markets: 2015

21

Source: Pike Research

Cross bow MICAz Intel IMote2 Hennic JN5139Radio standard 802.15.4/ZigBee 802. 15.4 802.15.4/Zig BeeTypical Range 100m (Out door)

30m 1km30m door)

Data Rate(kbps) 250 kbps 250 kbps 250KbpsSleep Mode (deep sleep) 15цA 390 цA 2.8цA(1.6цA)

Processor Only 8 mA active mode 31-53 mA1 207+0.325 MHz mA

Rx 19.7mA 44mA 34 mATx 17.4mA(+0 dBm) 44mA 34 mA(+3 dBm)Supply Voltage (min) 2.7V 3.2 V 2.7 VAverage 2.8 mW 12 mW 3 mW

Summary of Power Consumption of Commerical Sensor Network Nodes

0

2000

4000

6000

8000

10000

2010 2011 2012 2013 2014 2015

($ M

illio

ns)

($ Millions)

Wireless Sensor Network Revenue, World Markets: 2010-2015

22

MaterialsPiezoelectric

constant (d31)Dielectric

constant (K33)Electro-mechanical

coupling coefficient (K31)

Ceramics 200 pC/N 2100 0.68

(001) 70PMN-30PT 600 pC/N 4272 0.42

(110) 70PMN-30PT 953 pC/N 2798 0.78

Cantilever piezoelectric energy harvester (PEH) using high d31 single crystal.

0 200 400 600 800 10000

5

10

15

20

25

bulk pzt Single Crystal <001> Single Crystal <011>

Out

put V

olta

ge [V

]

load [k]0 200 400 600 800 1000

0.0

0.2

0.4

0.6

0.8

1.0

1.2

bulk ceramic Single Crystal <001> Single Crystal <011>

load [k]

POW

ER [m

W]

0 200 400 600 800 10000.000.010.020.030.040.050.060.070.080.090.100.110.12

Cal

aula

te.

curr

ent (

mA

)

load [k]

bulk ceramic Single Crystal <001> Single Crystal <011>

PMN‐30PT Single Crystal (www.ceracomp.com)

23

Piezoelectric Ceramics

한국 등록 10-0929552

MEMS Piezoelectric Energy Harvesting

• Low frequency (< 200 HZ) operation• d31 & d15 mode (normal cantilever structure use 31 mode only)• 3 d31 ≈ d33 < d15

Spiral spring type

15 mode

Normal cantilever type

31 mode

Vibration frequency: 139 Hz

• Output Voltage (P‐P): 83 mV at  4 m/s2 acceleration

• Natural frequency of cantilever: 139 Hz

24

한국 등록 10-0897783한국 등록 10-0956076

Laser lift‐off (LLO) processing, or laser transfer, is that the functional layer transfer fromtransparent substrates to receptor substrates by using laser

Eg (Energy band gap of material) > hv (laser photon energy)→Material is transparent against the laser. Which can’t absorb laser energy.

Eg (Energy band gap of material) < hv (laser photon energy)→Material is not transparent against laser. Which can absorb all energy from laser

25

한국 출원 2012-0063205미국 출원 13/713,396

Laser Lift-off & MIM structure samples

PDMS/Pt/PZT/Pt UV tape/Pt/PZT/Pt

After LLO. #2  (UV‐ tape)After LLO. #1  (PDMS)

Fabrication of PZT devices Laser radiation and sacrificial PZT melting

Sapphire substrate removal

Flexible devices based on PZT

26Sensors and Actuators A 184 (2012)

한국 출원 2012-0063205미국 출원 13/713,396

Touch sensor & Energy generation from MIM PEH

0 10 20

-2.0x10-9

0.0

2.0x10-9

-0.05

0.00

0.05

Time (s)

Vol

tage

(V)

Cur

rent

(A)

Output Voltage

Output Current

Output voltage: ~ 0.05 VOutput current: ~ 0.2 nAPower per unit area (μW/cm2): 1 x 10‐4 μW/cm2

MIM structure

0.05 V

0.2 nA

한국 출원 2012-0063205미국 출원 13/713,396

PI adhesiveSoft baking (hot plate): 80 ℃, 5 minhard baking (hot press):

90 ℃, > 30~ 40 min

Fabrication of planar structure samples

한국 출원 2012-0063205미국 출원 13/713,396

Output voltage: ~ 0.2 VOutput current: ~ 20 nAPower per unit area (μW/cm2): 4 x 10‐3 μW/cm2

Energy generation from planar PEH

0 10 20

-2.0x10-8

0.0

2.0x10-8

-0.2

0.0

0.2

Time (s)

Vol

tage

(V)

Cur

rent

(nA

) Output Voltage

Output Current

Planar structure

0.2 V

20 nA

한국 출원 2012-0063205미국 출원 13/713,396

Comsol modeling & simulation

• PZT thin films on polymer substrate

Si3N4 (500 nm)

SiO2 (500 nm)

Polyimide (500 nm)

Incident laser beam (2*2 μm2)Energy density: 50~100 mJ/cm2

Pulse width: 24 ns

5 μm

Thermal insulation

PZT (200 nm)

한국 등록 1303853

Experimental condition

Film Deposition Experimental conditions

RF power

Substrate Temp.

Gas Ratio

Working Pressure

Thickness of films

Substrate

100W

R.T

Ar:O2 = 20:1

5 mTorr

~/100/100/100 nm

Pt/Ti/SiO2/Si sub.

ELA Experimental conditions

Laser Energy Density

# of Shot

Repetition Rate

Substrate Temp.

60 ~ 90 mJ/cm2

6000

20 Hz

R.T

PZT thin films deposited by RF sputtering at R.T.

PZT thin films annealed by ELA

ELA system

한국 등록 1303853

The flexible energy harvester exhibit generated electrical power with average power density ~ 26 nW/cm2 (0.87 mW/cm3).

0 5 10 15 20 25 30 35 40

-0.6

-0.4

-0.2

0.0

0.2

0.4

0.6

Average = -0.23 V

Gen

erat

ed V

olta

ge (V

)

Time (s)

Average = 0.36 V

0 5 10 15 20 25 30 35 40-150

-100

-50

0

50

100

150

Time (s)

Gen

erat

ed C

urre

nt (n

A) Average = 74 nA

Average = 64 nA

Electrical power generation 한국 등록 1303853

Nanocomposite generator

PDMS

• Fabricating Process of Nanocomposite piezo-generator

The PDMS containing the two nano-materials (a) is poured into a petri dish (b) and cured at room temperature for one day (c) The NCG is coated with Ag paste are used to top/bottom electrodes (d). The NC poled by applying an electric field of 100 kV/cm for 12h

한국 출원 2012-0063206미국 출원 13/663,781

• The output voltage and current signals

0 1 2 3 4 5 6

-150

-100

-50

0

50

100

150

200

Cur

rent

(nA

)

Time (sec)0 5 10 15 20

-3

-2

-1

0

1

2

3

Volta

ge (V

)

Time (Sec)

PZT NWs & Ag NWs NCG device (with an area of 1.5 cm x 3 cm)Max output voltage: 2.5 VMax output current: 200 nA

한국 출원 2012-0063206미국 출원 13/663,781

Thank you