digital integrated circuits adapted from ucb-ee141 copyright 1996 ucb. devices פרופ’ יוסי...
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Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
פרופ’ יוסי שחם
המחלקה לאלקטרוניקה פיזיקלית
אוניברסיטת תל-אביב
)לפי ההרצאות של יאן ראבאי מברקלי(
MOSהתקני
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
מטרת הפרק
הבנה בסיסית של התקני מל”מ •רלבנטים
חזרה על המשוואות הבסיסיות•
פתרון “ידני” של מעגלים•
SPICEמבוא ל- •
מבוא להתקנים תת-מיקרונים•
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
דיודה
n
p
p
n
B A SiO2Al
A
B
Al
A
B
סמל
VLSIחתך בדיודת צומת ב
חתך חד ממדי
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
אזור המיחסור
hole diffusionelectron diffusion
p n
hole driftelectron drift
ChargeDensity
Distancex+
-
ElectricalxField
x
PotentialV
W2-W1
)a( Current flow.
)b( Charge density.
)c( Electric field.
)d( Electrostaticpotential.
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
זרם
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
ממתח קדמי
x
pn0
np0
-W1 W20
p n)W
2(
n-regionp-region
Lp
diffusion
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
ממתח אחורי
x
pn0
np0
-W1 W20n-regionp-region
diffusion
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
סוגי דיודות
x
x
pn0
pn0
Wn
pn(x)
pn(x)
Wn
Short-base Diode
Long-base Diode
(standard in semiconductordevices)
דיודה קצרה
ליד מגע מתכת
דיודה ארוכה
טיפוסית לדיותות למצע
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
מודל דיודה
VD
ID = IS(eVD/T – 1)+
–
VD
+
–
+
–VDon
ID
(a) Ideal diode model (b) First-order diode model
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
קיבול צומת
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
קיבול הדיפוזיה
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
מיתוג דיודה
Vsrc
t = 0
V1
V2
VD
Rsrc
t = T
ID
Time
VD
ON OFF ON
Space chargeExcess charge
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
פריצה
–25.0 –15.0 –5.0 5.0
VD (V)
–0.1
I D (A
)0.1
0
0
Avalanche Breakdown
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
מודל דיודה - מלא
ID
RS
CD
+
-
VD
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
SPICEפרמטרי
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
MOSטרנזיסטור
n+n+
p-substrate
Field-Oxyde
)SiO2(
p+ stopper
Polysilicon
Gate Oxyde
DrainSource
Gate
Bulk Contact
CROSS-SECTION of NMOS Transistor
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
MOSטרנזיסטור
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
CMOSחתך בטכנולוגית
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
סימנים וסמלים של טרנזיטורי MOS
D
S
G
D
S
G
G
S
D D
S
G
NMOS Enhancement NMOS
PMOS
Depletion
Enhancement
B
NMOS withBulk Contact
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
מתח סף - עקרון בסיסי
n+n+
p-substrate
DSG
B
VGS
+
-
Depletion
Region
n-channel
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
מתח סף - חישוב
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
אפייני מתח זרם
n+n+
p-substrate
D
SG
B
VGS
xL
V(x) +–
VDS
ID
MOS transistor and its bias conditions
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
אפייני מתח-זרם בתחום הלינארי וברוויה
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
טרנזיסטור ברוויה
n+n+
S
G
VGS
D
VDS > VGS - VT
VGS - VT+-
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
אפיין מתח-זרם
0.0 1.0 2.0 3.0 4.0 5.0
VDS (V)
1
2
I D (
mA
)
0.0 1.0 2.0 3.0VGS (V)
0.010
0.020
÷ I
D
VT
SubthresholdCurrent
Triode Saturation
VGS = 5V
VGS = 3V
VGS = 4V
VGS = 2V
VGS = 1V
(a) ID as a function of VDS (b) ID as a function of VGS
(for VDS = 5V).
Sq
ua
re D
ep
end
en
ce
VDS = VGS-VT
NMOS Enhancement Transistor: W = 100 m, L = 20 m
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
מודל לחישוב “ידני”
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
MOSמודל דינמי של טרנזיסטור
DS
G
B
CGDCGS
CSB CDBCGB
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
קיבול השער
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
קיבול שער ממוצע
Most important regions in digital design: saturation and cut-off
Different distributions of gate capacitance for varying
operating conditions
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
קיבול הדיפוזיה
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
קיבול הצמתות
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
לינאריזציה של קיבול הצומת
Replace non-linear capacitance bylarge-signal equivalent linear capacitance
which displaces equal charge over voltage swing of interest
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
תת-מיקרוני MOSמודל של טרנסיטור
חישוב מתח סף מתוקן•
התנגדויות פרזיטיות•
רווית מהירות וירידת ניידות•
הולכה בתת-סף•
• LATHCUP
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
אפקטים של תעלה קצרה
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
מודלים של תעלה קצרה
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
MOSחיבורי התקני
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
שינויי מתח הסף
VT
L
Long-channel threshold Low VDS threshold
Threshold as a function of the length (for low VDS)
Drain-induced barrier lowering (for low L)
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
התנגדויות פרזיטיות
W
LD
Drain
Draincontact
Polysilicon gate
DS
G
RS RD
VGS,eff
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
רווית מהירות )א(
EV/m(Esat
n )c
m/s
ec(
sat = 107
Constant mobility )slope = (
constant velocity
EtV/m(
n )c
m2 /V
s(
n0
)b( Mobility degradation)a( Velocity saturation
0
700
250
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
רווית מהירות )ב(
VDS (V)
I D (
mA
)
Lin
ea
r D
ep
en
de
nc
e
VGS = 5
VGS = 4
VGS = 3
VGS = 2
VGS = 1
0.0 1.0 2.0 3.0 4.0 5.0
0.5
1.0
1.5
(a) ID as a function of VDS (b) ID as a function of VGS(for VDS = 5 V).
0.0 1.0 2.0 3.0VGS (V)
0
0.5
I D (
mA
)
Linear Dependence on VGS
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
הולכה בתת-סף
0.0 1.0 2.0 3.0VGS (V)
10 12
10 10
10 8
10 6
10 4
10 2
ln(I
D)
(A)
Subthreshold exponential region
Linear region
VT
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
Latchup
)a( Origin of latchup )b( Equivalent circuit
VDD
Rpsubs
Rnwell p-source
n-source
n+ n+p+ p+ p+ n+
p-substrateRpsubs
Rnwell
VDD
n-well
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
SPICEמודלים של
- התקנים ארוכים, פשוט1 רמה •
- מודל פיזיקלי, כולל רווית 2 רמה •מהירות ומתח סף מתוקן
- חצי-ניסויי, התאמת 3 רמה •פרמטרים
ניסויי, כולל כל ( - BSIM )4 רמה •האפקטים, פופולרי מאוד.
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
MOSפרמטרים עיקריים של טרנזיסטור
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
לרכיבים פרזיטים SPICEמודל
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
לטרנזיסטורים SPICEמודל
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
מיקרון0.5לתהליך SPICEמודל
.MODEL CMOSN NMOS LEVEL=3 PHI=0.7 TOX=10E-09 XJ=0.2U TPG=1 VTO=0.65 DELTA=0.7+ LD=5E-08 KP=2E-04 UO=550 THETA=0.27 RSH=2 GAMMA=0.6 NSUB=1.4E+17 NFS=6E+11+ VMAX=2E+05 ETA=3.7E-02 KAPPA=2.9E-02 CGDO=3.0E-10 CGSO=3.0E-10 CGBO=4.0E-10+ CJ=5.6E-04 MJ=0.56 CJSW=5E-11 MJSW=0.52 PB=1.MODEL CMOSP PMOS LEVEL=3 PHI=0.7 TOX=10E-09 XJ=0.2U TPG=-1 VTO=-0.92 DELTA=0.29+ LD=3.5E-08 KP=4.9E-05 UO=135 THETA=0.18 RSH=2 GAMMA=0.47 NSUB=8.5E+16 NFS=6.5E+11+ VMAX=2.5E+05 ETA=2.45E-02 KAPPA=7.96 CGDO=2.4E-10 CGSO=2.4E-10 CGBO=3.8E-10+ CJ=9.3E-04 MJ=0.47 CJSW=2.9E-10 MJSW=0.505 PB=1
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
1התאמת פרמטרים לרמה
VGS = 5 V
VDS = 5 V VDS
ID
Long-channel
approximation
Short-channelI-V curve
Region of
matching
Select k’ and such that best matching is obtained @ Vgs= Vds = VDD
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
התקדמות הטכנולוגיה
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
התקנים ביפולרים
n-epitaxy
p-substrate
n+ buried layer
p+
isolation
n+ p+
pn+
E B C
p+
E C
B
n+ p n
)a( Cross-sectional view.
)b( Idealized transistor structure.
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
סימונים
C
E
B
IB
IE
IC+
–
+
+
–
–
VBC
VBE
VCE
C
E
B
IB
IE
IC+
–
+
+
–
–
VBC
VBE
VCE
(a) npn (b) pnp
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
אופני עבודה של התקנים ביפולרים
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
ממתח קדמי פעיל
x
E B C
WB
Carrier Concentration
DepletionRegions
0 W
pe0
pc0
nb0
nb)0(
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
רכיבי הזרם
x
E B C
ICIE
IB
1
2 3
electrons
holes
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
ממתח אחורי פעיל
x
E B C
WB
Carrier Concentration
0 W
pe0nb0
nb)0(
pc0
nb)W(
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
רוויה
x
E B C
WB
Carrier Concentration
0 W
pe0
nb0
nb)0(
pc0QS
QAnb)W(
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
קיטעון
x
E B C
WB
Carrier Concentration
0 W
pe0
nb0nb)0(pc0
nb)W(
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
Bipolar Transistor Operation
0.0 2.0VCE (V)
0
5
10
15
I C(m
A)
-3.0 -1.0
VCE (V)
-0.5
I C (
mA
)
IB=100 A
IB=75 A
IB=50 A
IB=25 A
0
-0.25
IB=25 A
IB=50 A
IB=75 A
IB=100 A
Reverse Operation
Forward Operation
Active
Saturation
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
מודלים של התקנים ביפולרים
E
CB
FIB
IB
+
–
VBE
IB = IS(eVBE/T – 1)E
CB
FIB
IB
+–VBE(on)
(a) Forward-active (b) Forward-active (simplified)
E
CB
IB
+–VBE(sat)
(c) Forward-saturation
+– VCE(sat)
IC < FIB
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
מודל הקיבול הפרזיטי של טרנזיסטור ביפולרי
C
E
B
QF
QR
Cbe
Cbc
S
Ccs
collector-substratejunction capacitance
base-emitterbase-collector
junction capacitances
base charge
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
קיבולי הצמתות
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
קיבולי הדיפוזיה
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
אפקטים נוספים בטרנזיסטורים ביולרים
EARLYמתח
התנגדויות פרזיטיות
תלות בטאהזרםהגבר
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
EARLYמתח
ForwardActive
Saturation
VA
VCE
IC
VBE3
VBE2
VBE1
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
התנגדויות פרזיטיות
n-epitaxy
p-substrate
n+ buried layer
p+
isolation
n+ p+p n+
E B C
p+rC1
rC3
rB
rC2
rE
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
תלות
VBE )linear(
ln )I(
IC
IB
F
High Level Injection
Recombination
IKF
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
SPICEמודל
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
עיקריים SPICEפרמטרי
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
לרכיבים פרזיטיים SPICEפרמטרי
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
SPICEפרמטרי
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
שינויי תהליך
Devices parameters vary between runs and even on the same die!
Variations in the process parameters, such as impurity concentration den-sities, oxide thicknesses, and diffusion depths. These are caused by non-uniform conditions during the deposition and/or the diffusion of theimpurities. This introduces variations in the sheet resistances and transis-tor parameters such as the threshold voltage.
Variations in the dimensions of the devices, mainly resulting from thelimited resolution of the photolithographic process. This causes )W/L(variations in MOS transistors and mismatches in the emitter areas ofbipolar devices.
Digital Integrated CircuitsAdapted from UCB-EE141 Copyright 1996 UCB.
DevicesDevices
שינויי תהליך
1.10 1.20 1.30 1.40 1.50 1.60
Leff (in mm)
1.50
1.70
1.90
2.10
De
lay
(nse
c)
–0.90 –0.80 –0.70 –0.60 –0.50
VTp (V)
1.50
1.70
1.90
2.10
De
lay
(nse
c)
Delay of Adder circuit as a function of variations in L and VT
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