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Green Memory Solution Jung-Bae Lee
2/25
• Introduction – Data Explosion and Data Center Expansion
– Data Center Issues: Power & Performance
• Samsung “Green Memory” Solution – History of “Green Memory”
– Memory & Storage: DDR4 DRAM & NVMe PCIe SSD
– TCO Savings and Benefits of Samsung Solution
– Future Memory and Storage
Contents
3/25
• Paradigm shift from Web 2.0 to Web 3.0 triggered exponential data increase
Data Trends in Data Centers
100,000 New tweets/min
Read
Write
+ 250B Photos uploaded/day
3,000 Photos uploaded/min
30hours Video uploaded/min
2,083 Check-ins/min
WEB 3.0
PC
Tablet
Laptop
Mobile
Database
Remote Server
4/25
• World-wide Volume of data expected to double every 1.2 years
• 125% annual increase of data traffic handled by data center
Growth of Data & Data Traffic
[ Cisco, 2013 ]
(ZB)
[ Oracle, 2013 ]
0
10
20
30
40
50
2012 2013 2014 2015 2016 2017 2018 2019 2020
2.5 4 5 7.5
11
15
22
31
44
0
2
4
6
8
2012 2013 2014 2015 2016 2017
2.6 3.3
4.2
5.2
6.4
7.7 (ZB) DATA DATA
DATA
DATA DATA
SNS
C Compute
Client
Data Growth Data Traffic Growth
5/25
• Data center revenue will reach $20B by 2016
• Strong storage volume demand accordingly (over 150 EB by 2016)
Data Center Expansion
(Billion)
2012 2013 2014 2015 2016
$5.7
$8.6
$11.9
$15.6
$19.5
[ Gartner, 2013 ] [ 451 Research, 1Q’2013 ]
0
50
100
150
200
2012 2013 2014 2015 2016
(Exabyte) CAGR : 47%
CAGR : 36%
Data Center Revenue Forecast Data Center Storage Forecast
6/25
• Wide disparity between data traffic and data center infrastructure
– 3.7X data traffic increase but space and server/storage spending only projected to 1.7X and 1.2X increase
Issues with Data Traffic in Data Center
2011 2012 2013 2014 2015 2016 [ Reference : IDC’s Data center Census, ‘12 / Gartner ‘13 ]
$88B $90B $94B $99B $103B $109B 569 M2SF 620 678 737 797 861 1.8 ZB
2.6 ZB
3.3 ZB
4.1 ZB
5.2 ZB
6.4 ZB
7/25
• Data center CIOs’ (Chief Information Officer) 4 major problems
Key Concerns and Movements
Required power supply for maintaining and operating data centers
Insufficient space for housing the increasing amounts of data
Limited budget for maintenance
Management as overall operational and security issues
Source: SAMSUNG Memory Solutions Forum 2013
• Data center industry’s movements to solve issues
– Location, Location, Location: Cooler climate & low $ real estate
– Maximizing server efficiency with virtualization (Key technology breakthrough)
8/25
• Power-related cost occupies 31% from total data center cost
• Memory & Storage power portion including cooling takes 32% of total data center power
Power in Data Center
18% 13%
57%
8%
4%
Power Distribution & Cooling Power
Server Cost Networking Equipment
Other Infrastructure
Source : http://perspectives.mvdirona.com/2010/09/18/OverallDataCenterCosts.aspx Source: Uptime Institute’s 2013 Data Center Survey, SAMSUNG, EMC
Cooling
and others 27%
DRAM Cooling
6%
DRAM
9% HDD/SSD Cooling
7%
HDD/SSD 10%
CPU 16%
Others 25%
[Worldwide Average PUE*: 1.65]
*PUE : Power Usage Efficiency
Data Center Cost Portion Memory Power Portion
9/25
• Memory power portion of data center getting more importance
– On-going effort for better PUE (Power Usage Efficiency)
– Consequently, better PUE to make relative increase in memory power portion
(19% with PUE 1.65 27%* with PUE 1.2)
Memory Power Portion in Data Center
Source: Uptime Institute 2013 Data Center Survey, SAMSUNG, IDC, EMC
Power, Board, Network
25%
Others
39%
CPU
17%
Power, Board, Network
29%
Others
29%
CPU
19%
Power, Board,
Network
34%
Others
17%
CPU
22%
[World wide average PUE* : 1.65]
*PUE (Power Usage Efficiency) = Total facility power
IT equipment power Ideal PUE is 1.0 if others is zero.
10/25
• Virtualization as key technology for TCO (Total Cost of Ownership) reduction, requiring more performance from H/W to handle more data
Performance in Data Center
Application
Operating System
Hardware
Application
Operating System
Hardware
Application
Operating System
Hypervisor (Virtualization)
H/W Traffic MORE H/W Traffic
Typical Server Server with Virtual Machine
Typical Server Usage Optimized for Virtualization
HD
D IOPS < 400
SSD
IOPS > 140K
Latency > 50ms Latency < 5ns
DD
R3 Performance 1x
DD
R4 Performance 1.39x
Power 1x Power 0.85x
11/25
다른 이미지 사용
Let There Be Right Solution with Samsung Green Memory Solution – DDR4 DRAM & NVMe PCIe SSD
12/25
History of Samsung “Green Memory”
5th Gen.
1st Gen.
2nd Gen.
3rd Gen.
4th Gen.
Power Efficiency & Technology Innovation
2009 2010 2011 2012 2013
Process Technology Innovation
Solution Technology Innovation 40nm-class DDR3 2Gb
30nm-class DDR3 4Gb
20nm-class DDR3 4Gb
20nm-class DDR3 4Gb
30nm-class SATA 3G
20nm-class SATA 6G
20nm-class
DDR4
4Gb
V-NAND
NVMe PCIe
• Since 2009, Samsung has been creating generations of “Green Memory” solution every year
13/25
• Samsung’s world best DRAM and SSD products leading the market
World Best Memory and Storage
64Mb 256Mb 1Gb
1Gb
32GB
2Gb
2Gb 4Gb 8Gb 16Gb 32Gb
16GB 64GB 256GB 512GB 800GB
4Gb DDR4 DRAM
3D V-NAND
1TB
NAND No.1
MCP No.1
12” Production
64Gb
World Best Semiconductor Company 8” Production
DRAM No.1
SSD No.1
14/25
• 39% system performance improvement and 15% memory power reduction compared to existing DDR3 technology (1600Mbps, 1.35V 2133Mbps, 1.2V)
Samsung Green DDR4 DRAM (1)
Integer Operation Floating Point Operation
* Benchmark result (16GB 2DPC@DDR3 1.35V, DDR4 1.2V)
DDR3 DDR4 DDR3 DDR4
29% 39%
More Performance Lower Power
15%
Memory Power System Power
DDR3 DDR4 DDR3 DDR4
6%
[ Condition : 16GB 2DPC@ DDR3 1.35V, DDR4 1.2V ]
DDR3 DDR4
15/25
• More reliability features compared to DDR3
• Samsung’s In-DRAM solution is the most efficient for Row Hammer operation
Samsung Green Memory - DDR4 DRAM (2)
Enhanced Reliability Row Hammer Free
…
LRDIMM
Parity RDIMM
Data ECC
DBI
PDA Mode
CA Parity
CRC
PPR
DDR4
DDR3
* PPR(Post Package Repair), CRC(Cyclic Redundancy Check), CA (Command, Address) Parity, PDA(Per DRAM Addressability), DBI(Data Bus Inversion) * pTRR : Pseudo Target Row Refresh
pTRR + 2x Ref
4%
In-DRAM (Samsung)
-6%
pTRR + 2x Ref
In-DRAM (Samsung)
[ Better Performance ] [ Less Power ]
* Condition : 3DPC & > 32GB/Ch.
16/25
• NVMe PCIe provides superb bandwidth through multi-lane architecture, and better latency from efficient protocol and simple architecture
Samsung Green NVMe PCIe SSD (1)
600MB/s
4,000MB/s
CPU CPU
HBA PCIe SATA NVMe PCIe CPU CPU
+567% Bandwidth Improvement
+67% Latency Improvement
17/25
• NVMe PCIe SSD provides significant energy efficiency (x2000 compared to SATA HDD)
Samsung Green NVMe PCIe SSD (2)
Low-power NAND
Low-power Controller
Low-power PCB/Circuits
6 Watt
2 Watt 200 IOPS
140K IOPS 3x better in Power
700x better in Performance
Power : condisdered with 8 hours active and 16 hours idle status Performance : workload considered with 7:3 read/write ratio
2,000x Energy Effiency (IOPS/Watt)
18/25
• ‘Green memory’ can dramatically reduce TCO (Total Cost Ownership)
• Better performance, less power and space with same cost
TCO savings – ‘Green Memory’
Concurrent Users (1K people)
Source: SAMSUNG Green Memory - Official Website
Existing Server “Green Memory” Server
Power Consumption (KW)
Server (EA)
Same Cost
40,000 65,000
2,600 2,300
10,000 7,800
19/25
• TCO savings translated to increase in data center capacity and investment 3.4X improvements in space, 2X in server/storage
Benefits from Samsung Solution
2011 2012 2013 2014 2015 2016 [ Reference : IDC’ ‘12 / Gartner ’13 / Samsung ]
$88B $90B $94B 569 M2SF 620 678
1.8 ZB
2.6 ZB
3.3 ZB
4.1 ZB
5.2 ZB
6.4 ZB
1900
1750
1620
$176B $164B $155B
20/25
• Samsung 5th generation ‘Green Memory’ solution saves 3.1 billion dollars, equivalent to 45TWh energy savings
CSV (Creating Shared Value)
45TWh Reduction*
100% Green
Solar Heat Power Station (Area of Hawaii x2)
Thermoelectric power plant 7.7 units reduction
World population can use handset for 1.8 years
800M Trees (Singapore area x4.6)
3.1 Billion Dollars
* Assumes ’14 W/W Server & high-end storage change to 100% Green Memory
21/25
Future Technology - DRAM
4H TSV Stack DRAM
20nm process
HBM
• Samsung keeps leading process technology innovation
1xnm process
• 8Channel • 1024 I/O (128Bit per Channel) • 256GB/s (2Gbps per Pin) • 2/4/8H TSV Stack
• TSV* for high capacity with low power, HBM* for high BW with low power
1ynm process
Mar. 11th ’14 - Qualification - Press Release
upto 128GB capacity module (with 8Gb comp.)
Now
* TSV : Thru Silicon Via, HBM : High BW Memory
22/25
• NAND scale-down to be continued with V-NAND technology
• Innovative features to be introduced with next generation SSDs
Future Technology - SSD
SSD with V-NAND New Features
Key_Value Storage
In Storage Processing
Key_Value Communication
Object Storage
…
Database
Processing Distribution
Planar NAND V-NAND
Advantage Easy to produce
with simple process High reliability
& process reuse
Challenge Shrinking under sub-10nm Stacking
23/25
• On-going technology innovation keeping up DRAM & NAND scale-down
• New memory solutions under development for future value creation
Future Memory
Perf
orm
ance
Cost
PRAM
MRAM
Hig
h
Low
Low High
Maturity
Low High
Performance vs. Cost
ReRAM NAND
DRAM
Embedded memory @SoC Unified memory @IoT
Large size storage
Storage Class Memory@Server Unified memory @IoT
24/25
• Samsung’s world best DRAM and SSD products are leading the market
• Samsung has been creating generations of “Green Memory” solution every year since 2009
• Samsung ‘Green memory’ can dramatically reduce TCO (Total Cost of Ownership)
– DDR4 DRAM offers 39% improved performance and 15% reduced power compared with DDR3
– NVMe PCIe SSD offers 2,000x better energy efficiency than SATA HDDs
• Future technology developments are on track – DRAM & NAND keep shrinking with process technology innovation
– New features are going to be introduced with next generation SSDs
– New memory technologies (MRAM/PRAM) are under development as value creation products
Summary
Thank You
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