lecture 4 design rules%2clayout and stick diagram(2)

Lecture 4 Design Rules,Layout

and Stick Diagram

Pradondet Nilagupta

pom@ku.ac.th

Department of Computer Engineering

Kasetsart University

April 11, 2023 204424 Digital Design Automation2

Acknowledgement

This lecture note has been summarized from lecture note on Introduction to VLSI Design, VLSI Circuit Design all over the world. I can’t remember where those slide come from. However, I’d like to thank all professors who create such a good work on those lecture notes. Without those lectures, this slide can’t be finished.

Roadmap for the term: major topics

VLSI Overview CMOS Processing & Fabrication Components: Transistors, Wires, & Parasitics Design Rules & Layout Combinational Circuit Design & Layout Sequential Circuit Design & Layout Standard-Cell Design with CAD Tools Systems Design using Verilog HDL Design Project: Complete Chip

P substrate

Review - CMOS Mask Layers

Determine placement of layout objects

Color coding specifies layers

Layout objects: Rectangles Polygons Arbitrary shapes

Grid types Absolute (“micron”) Scaleable (“lambda”) wafer

n well

Mask Generation

Mask Design using Layout Editor user specifies layout objects on different layers output: layout file

Pattern Generator Reads layout file Generates enlarged master image of each mask layer Image printed on glass

Step & repeat camera Reduces & copies image onto mask One copy for each die on wafer Note importance of mask alignment

Symbolic Mask Layers

Key idea: Reduce layers to those that describe design Generate physical layers as needed

Magic Layout Editor: "Abstract Layers” metal1 (blue) - 1st layer metal (equiv. to physical layer) Poly (red) - polysilicon (equivalent to physical layer) ndiff (green) - n diffusion (combination of active, nselect) ntranistor (green/red crosshatch) - combined poly, ndiff pdiff (brown) - p diffusion (combination of active, pselect) ptransistor (brown/red crosshatch) - combined poly, pdiff contacts: combine layers, cut mask

About Magic

Scalable Grid for Scalable Design Rules Grid distance: lambda) Value is process-dependent:

= 0.5 X minimum transistor length Painting metaphor

Paint squares on grid for each mask layer Layers to interact to form components (e.g.

transistors)

Mask Layers in Magic

Poly (red) N Diffusion (green) P Diffusion (brown) Metal (blue) Metal 2 (purple) Well (cross-hatching) Contacts (X)

Magic User-Interface

Graphic Display Window Cursor Box - specifies area to paint

Command window (not shown) accepts text commands:paint poly:paint red:paint ndiff:paint green:write

prints error & status messages

Cursor

Paint(poly)

Paint(pdiff)

Paint(ntransistor)

Layer Interaction in Magic

Transistors - where poly, diffusion cross poly crosses ndiffusion - ntransistor poly crosses pdiffusion - ptransistor

Vias - where layers connect Metal 1 connecting to Poly - polycontact Metal 1 connecting to P-Diffusion (normal) - pdc Metal 1 connecting to P-Diffusion (substrate contact) - psc Metal 1 connecting to N-Diffusion (normal) - ndc Metal 1 connecting to N-Diffusion (substrate contact) - nsc Metal 1 connecting to Metal 2 - via

Magic Layers - Example

p-transistor

ntransistor

metal1

ndc ndc

polycontact

Why we need design rules

Masks are tooling for manufacturing. Manufacturing processes have inherent

limitations in accuracy. Design rules specify geometry of masks

which will provide reasonable yields. Design rules are determined by experience.

Manufacturing problems

Photoresist shrinkage, tearing. Variations in material deposition. Variations in temperature. Variations in oxide thickness. Impurities. Variations between lots. Variations across a wafer.

Transistor problems

Varaiations in threshold voltage: oxide thickness; ion implanatation; poly variations.

Changes in source/drain diffusion overlap. Variations in substrate.

Wiring problems

Diffusion: changes in doping -> variations in resistance, capacitance.

Poly, metal: variations in height, width -> variations in resistance, capacitance.

Shorts and opens:

Oxide problems

Variations in height. Lack of planarity -> step coverage.

metal 1metal 2

metal 2

Via problems

Via may not be cut all the way through. Undesize via has too much resistance. Via may be too large and create short.

MOSIS SCMOS design rules

Designed to scale across a wide range of technologies.

Designed to support multiple vendors. Designed for educational use. Ergo, fairly conservative.

and design rules

is the size of a minimum feature. Specifying particularizes the scalable rules. Parasitics are generally not specified in

Design Rules

Typical rules:Minumum sizeMinimum spacingAlignment / overlapCompositionNegative features

Types of Design Rules

Scalable Design Rules (e.g. SCMOS) Based on scalable “coarse grid” - (lambda) Idea: reduce value for each new process, but keep rules

the sameKey advantage: portable layoutKey disadvantage: not everything scales the same

Not used in “real life” Absolute Design Rules

Based on absolute distances (e.g. 0.75µm) Tuned to a specific process (details usually proprietary) Complex, especially for deep submicron Layouts not portable

SCMOS Design Rules

Intended to be Scalable Original rules: SCMOS Submicron: SCMOS-SUBM Deep Submicron: SCMOS-DEEP

Pictorial Summary: Book Fig. 2-24, p. 27 Authoritative Reference: www.mosis.org

SCMOS Design Rule Summary

Line size and spacing: metal1: Minimum width=3, Minimum Spacing=3 metal2: Minimum width=3, Minimum Spacing=4 poly: Minimum width= 2, Minimum Spacing=2 ndiff/pdiff: Minimum width= 3, Minimum Spacing=3

minimum ndiff/pdiff seperation=10 wells: minimum width=10,

min distance form well edge to source/drain=5 Transistors:

Min width=3 Min length=2 Min poly overhang=2

SCMOS Design Rule Summary

Contacts (Vias) Cut size: exactly 2 X 2 Cut separation: minimum 2 Overlap: min 1 in all directions Magic approach: Symbolic contact layer min. size 4 X 4 Contacts cannot stack (i.e., metal2/metal1/poly)

Other rules cut to poly must be 3 from other poly cut to diff must be 3 from other diff metal2/metal1 contact cannot be directly over poly negative features must be at least 2 in size CMP Density rules (AMI/HP subm): 15% Poly, 30% Metal

Design Rule Checking in Magic

Design violations displayed as error paint

Find which rule is violated with ":drc why” Poly must overhang transistor by at least 2 (MOSIS rule #3.3)

Scaling Design Rules

Effects of scaling down are positive See book, p. 78-79 - if “everything” scales,

scaling circuit by 1/x increases performance by x

Problem: not everything scales proportionally

Aside - About MOSIS

MOSIS - MOS Implementation Service Rapid-prototyping for small chips

Multi-project chip idea - several designs on the same wafer

Reduced mask costs per design Accepts layout designs via email Brokers fabrication by foundries

(e.g. AMI, Agilent, IBM, TSMC) Packages chips & ships back to designers

Our designs will use AMI 1.5µm process (more about this later)

Aside - About MOSIS

Some Typical MOSIS Prices (from www.mosis.org) AMI 1.5µm “Tiny Chip” (2.2mm X 2.2mm) $1,080 AMI 1.5µm 9.4mm X 9.7mm $17,980 AMI 0.5µm 0-5mm2 $5,900 TSMC 0.25µm 0-10mm2 $15,550 TSMC 0.18µm 0-7mm2 $24,500 TSMC 100-159mm2 $63,250 + $900 X size

MOSIS Educational Program (what we use) AMI 1.5µm “Tiny Chip” (2.2mm X 2.2mm) FREE* AMI 0.5mm “Tiny Chip” (1.5mm X 1.5mm) FREE*

*sponsored by Semiconductor Industry Assn., Semiconductor Research Corp., | AMI, Inc., DuPont Photomasks, and MOSIS

Layout Considerations

Break layout into interconnected cells Use hierarchy to control complexity Connect cells by

Abutment Added wires

Key goals: Minimize size of overall layout Meet performance constraints Meet design time deadlines

Hierarchy in Layout

Chips are constructed as a hierarchy of cells Leaf cells - bottom of hierarchy Root cells - contains overall cell

Example - hypothetical “UART” Pad frame - “ring” that contains I/O pads Core - contains logic organized as subcells

Shift registerFSMOther cells

Hierarchy Example

Root Cell: UART

Pad Frame

Pad 1 Pad 2 ... Pad NShift

RegisterFSM

Other Cells

metal 36

metal 23

metal 13

pdiff/ndiff3

Transistors

Types of via: metal1/diff, metal1/poly, metal1/metal2.

Metal 3 via

Type: metal3/metal2. Rules:

cut: 3 x 3 overlap by metal2: 1 minimum spacing: 3 minimum spacing to via1: 2

Tub tie

Spacings

Diffusion/diffusion: 3 Poly/poly: 2 Poly/diffusion: 1 Via/via: 2 Metal1/metal1: 3 Metal2/metal2: 4 Metal3/metal3: 4

Overglass

Cut in passivation layer. Minimum bonding pad: 100 m. Pad overlap of glass opening: 6 Minimum pad spacing to unrelated metal2/3:

30 Minimum pad spacing to unrelated metal1,

poly, active: 15

Stick diagrams (1/3)

A stick diagram is a cartoon of a layout. Does show all components/vias (except

possibly tub ties), relative placement. Does not show exact placement, transistor

sizes, wire lengths, wire widths, tub boundaries.

Stick Diagrams (2/3)

Key idea: "Stick figure cartoon" of a layout Useful for planning layout

relative placement of transistors assignment of signals to layers connections between cells cell hierarchy

Stick Diagrams (3/3)

Metal (BLUE)

Polysilicion (RED )

N-Diffusion (Green)

P-Diffusion (Brown)

Contact / Via

n-diff

p-diff

poly n-diff p-diff metal

S N P NC

S X NC

Connection RulesLayers

Example - Stick Diagrams (1/2)

Circuit Diagram. Pull-Down Network(The easy part!)

Alternatives - Pull-up Network

Complete Stick Diagram

Example - Stick Diagrams (2/2)

Inverter

NAND Gate

Dynamic latch stick diagram

VSSphiphi’

Stick Diagram XOR Gate Examples

Exclusive OR Gate

A’ B’

A A’

B B’

Hierarchical Stick Diagrams

Define cells by outlines & use in a hierarchy to build more complex cells

NAND CellStick Diagram

NAND CellOutline

Cell Connection Schemes

External connection - wire cells together Abutment - design cells to connect when

adjacent Reflection, mirroring - use to make abutment

possible

Example: 2-input multiplexer

First cut:Vdd

OUT = A*S + B*S’

Sticks design of multiplexer

Start with NAND gate:

NAND sticks

Refined one-bit Mux Design

Use NAND cell as black box Arrange easy power connections Vertical connections for allow multiple bits

OutNAND

select’ select

3-bit mux sticks

m2(one-bit-mux)select’ select VDD

select’ select

Multiple-Bit Mux

select’ select

OutNAND

VddA0A0

OutNAND

VddA1B1

Cell Mirroring, Overlap

Use mirroring, overlap to save area

VddA0B0

OutNAND

Example: Layout / Stick Diagram

Create a layout for a NAND gate given constraints: Use minimum-size transistors Assume power supply lines “pass through” cell

from left to right at top and bottom of cell Assume inputs are on left side of cell Assume output is on right side of cell Optimize cell to minimize width Optimize cell to minimize overall area

Layout Example

Vdd!Vdd!

Gnd! Gnd!

Circuit Diagram. Exterior of Cell

Example - Magic Layout

Overall Layout: 52 X 16

Review - VLSI Levels of Abstraction

Specification(what the chip does, inputs/outputs)

Architecturemajor resources, connections

Register-Transferlogic blocks, FSMs, connections

Circuittransistors, parasitics, connections

Layoutmask layers, polygons

Logicgates, flip-flops, latches, connections

You are Here

Levels of Abstraction - Perspective

Right now, we’re focusing on the “low level”: Circuit level - transistors, wires, parasitics Layout level - mask objects

We’ll work upward to higher levels: Logic level - individual gates, latches, flip-flops Register- transfer level - Verilog HDL Behavior level - Specifications

The Challenge of Design

Start: higher level (spec) Finish: lower level (implementation) Must meet design criteria and constraints

Design time - how long did it take to ship a product?

Performance - how fast is the clock? Cost - NRE + unit cost

CAD tools - essential in modern design

CAD Tool Survey: Layout Design

Layout Editors Design Rule Checkers (DRC) Circuit Extractors Layout vs. Schematic (LVS) Comparators Automatic Layout Tools

Layout Generators ASIC: Place/Route for Standard Cells, Gate

Arrays

Layout Editors

Goal: produce mask patterns for fabrication Grid type:

Absolute grid (MAX, LASI, LEdit, Mentor ICStation, other commercial tools)

Magic: lambda-based grid - easier to learn, but less powerful

Mask description: Absolute mask (one layer for each mask) Magic: symbolic masks (layers combine to

generate actual mask patterns)

Design Rule Checkers

Goal: identify design rule violations Often a separate tool (built in to Magic) General approach: “scanline” algorithm Computationally intensive, especially for

large chips

Circuit Extractors

Goal: extract netlist of equivalent circuit Identify active components Identify parasitic components

CapacitorsResistors

Layout Versus Schematic (LVS)

Goal: Compare layout, schematic netlists Compare transistors, connections (ignore

parasitics) Issue error if two netlists are not equivalent Important for large designs

Automatic Layout Tools

Layout Generators - produce cell from spec. Simple: Procedural specification of layout (see book Fig. 2-33, p. 95) Complex: Netlist - places & wires individual

transistors ASIC - Place, route modules with fixed shape

Standard Cells - use predefined cells as "cookie cutters"

Gate Arrays - configurable pre-manufactured gates (only change metal masks)

FPGAs - electrically configurable array of gates

Layout design and analysis tools

Layout editors are interactive tools. Design rule checkers are generally batch---

identify DRC errors on the layout. Circuit extractors extract the netlist from the

layout. Connectivity verification systems (CVS)

compare extracted and original netlists.

Automatic layout

Cell generators (macrocell generators) create optimized layouts for ALUs, etc.

Standard cell/sea-of-gates layout creates layout from predesigned cells + custom routing. Sea-of-gates allows routing over the cell.

Standard cell layout

routing area

routing arearout

routing area

lecture 4 design rules%2clayout and stick diagram(2)

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