ao4912

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1/8

Symbol Max Q2 Units

VDS V

VGS V

IDM

IAR A

EAR

mJ

TJ, TSTG C

Symbol

VDS

IFM

TJ, T

STGJunction and Storage Temperature Range

Power DissipationA

W1.28

-55 to 150 C

2

Pulsed Diode Forward CurrentB

Continuous Forward

CurrentAF

PD

IF

TA=25C

TA=70C

30 V

TA=25C

Parameter

Reverse Voltage

A2.2

20

3

TA=70C

Maximum Schottky

Max Q1

30

20

8.5

17

43

15

34

Units

TA=25C

TA=70C

Power DissipationPD

Pulsed Drain CurrentB

Continuous Drain

CurrentAF ID

-55 to 150 -55 to 150Junction and Storage Temperature Range

2

1.28 1.28

TA=25C

TA=70C

2

Avalanche CurrentB

12

30

Absolute Maximum Ratings TA=25C unless otherwise notedParameter

Drain-Source Voltage

Repetitive avalanche energy 0.3mHB

Gate-Source Voltage

W

A6.4

40 30

7

6.8

AO4912

Asymmetric Dual N-Channel Enhancement Mode Field Effect

Transistor

Features

Q1 Q2VDS(V) = 30V VDS(V) = 30V

ID= 8.5A ID=7A (VGS= 10V)

RDS(ON) < 17m

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Symbol Units

RJL

Symbol Units

RJL

RJL

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

74 110

Maximum Junction-to-LeadC Steady-State 35 40

Max

C/W

C/W

Parameter: Thermal Characteristics MOSFET Q2 Typ Max

Maximum Junction-to-AmbientA t 10s

RJA48

40

Thermal Characteristics Schottky

62.5

40

48

74

62.5

C/WMaximum Junction-to-AmbientA Steady-State

Maximum Junction-to-LeadC Steady-State 35

Typ

Maximum Junction-to-AmbientA Steady-State

Parameter: Thermal Characteristics MOSFET Q1

Maximum Junction-to-AmbientA t 10s

47.5

RJA

62.5Maximum Junction-to-Ambient t 10sRJA

Maximum Junction-to-Ambient Steady-State 110

110

Maximum Junction-to-LeadC Steady-State

71

32

A: The value of R JAis measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with

TA=25C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C. The RJAis the sum of the thermal impedence from junction to lead R JLand lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using

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Symbol Min Typ Max Units

BVDSS 30 V

1

TJ=55C 5IGSS 100 nA

VGS(th) 1 1.5 2 V

ID(ON) 25 A

20 26

TJ=125C 31.6 38

24.3 31 m

gFS 22 S

VSD 0.78 1 V

IS 3 A

Ciss 590 710 pF

Coss 162 pF

Crss 40 56 pF

Rg 0.2 0.45 0.6

Qg 6.04 7.3 nC

Qgs 1.46 nC

Qgd 2.56 nC

tD(on) 3.7 5.5 ns

tr 3.5 5.5 nstD(off) 14.9 22 ns

tf 2.5 4 ns

trr Body Diode Reverse Recovery time IF=7A, dI/dt=100A/s 21.2 26 ns

Qrr Body Diode Reverse Recovery charge IF=7A, dI/dt=100A/s 14.2 21 nC


COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN



Q2 Electrical Characteristics (TJ=25C unless otherwise noted)

Parameter Conditions

STATIC PARAMETERS

Drain-Source Breakdown Voltage ID=250A, VGS=0V

IDSS Zero Gate Voltage Drain CurrentVDS=30V, VGS=0V

A

Gate-Body leakage current VDS=0V, VGS= 12V

Gate Threshold Voltage VDS=VGS ID=250A

On state drain current VGS=4.5V, VDS=5V

RDS(ON) Static Drain-Source On-Resistance

VGS=10V, ID=7.0Am

VGS=4.5V, ID=6.0A

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERSInput Capacitance

VGS=0V, VDS=15V, f=1MHzOutput Capacitance

Reverse Transfer Capacitance

Forward Transconductance VDS=5V, ID=7A

Diode Forward Voltage IS=1A

SWITCHING PARAMETERS

Total Gate Charge

Gate resistance VGS=0V, VDS=0V, f=1MHz

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

VGS=10V, VDS=15V, RL=2.2,RGEN=3

VGS=4.5V, VDS=15V, ID=7.0A

Turn-On Rise TimeTurn-Off DelayTime

Turn-Off Fall Time






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Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

0

5

10

15

20

25

30

0 1 2 3 4 5

VDS(Volts)

Fig 1: On-Region Characteristics

ID(A)

VGS=2.5V

3.5V

3V4.5V

10V

0

4

8

12

16

20

0 0.5 1 1.5 2 2.5 3 3.5

VGS(Volts)

Figure 2: Transfer Characteristics

ID(A)

16

18

20

22

24

26

28

30

0 5 10 15 20

ID(A)Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

RDS(ON)

(m)

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

0.0 0.2 0.4 0.6 0.8 1.0

VSD(Volts)

Figure 6: Body-Diode Characteristics

IS(A)

125C

0.8

1

1.2

1.4

1.6

1.8

0 50 100 150 200Temperature (C)

Figure 4: On resistance vs. Junction Temperature

NormalizedOn-Resistance

VGS=10VVGS=4.5V

10

20

30

40

50

60

70

2 4 6 8 10

VGS(Volts)

Figure 5: On resistance vs. Gate-Source Voltage

RDS(ON)

(m)

VDS=5V

VGS=4.5V

VGS=10V

ID=7A

25C

ID=7A

125C

25C

25C125C

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

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0

1

2

3

4

5

0 1 2 3 4 5 6

Qg(nC)

Figure 7: Gate-Charge Characteristics

VGS

(Volts)

0

150

300

450

600

750

0 5 10 15 20 25 30

VDS(Volts)

Figure 8: Capacitance Characteristics

Capacitance(pF)

Ciss

0

10

20

30

40

0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E)

Power(W)

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

ZJA

NormalizedTransient

ThermalResistance

Coss

Crss

0.1

1.0

10.0

100.0

0.1 1 10 100

VDS(Volts)

ID(A)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

100s

10ms

1ms

0.1s

1s

10s

DC

RDS(ON)

limited 10s

VDS=15V

ID=7A

Single Pulse

D=Ton/T

TJ,PK=TA+PDM.ZJA.RJA

RJA=62.5C/W

TonT

PD

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

TJ(Max)=150C

TA=25C

f=1MHz

VGS=0V

TJ(Max)=150C, TA=25C


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Symbol Min Typ Max Units

BVDSS 30 V

0.007 0.05

3.2 10

12 20

IGSS 100 nA

VGS(th) 1 1.8 3 V

ID(ON) 30 A

13.8 17

TJ=125C 20 24

19.7 25 m

gFS 23 S

VSD 0.45 0.5 V

IS 3.5 A

Ciss 971 1165 pFCoss 190 pF

Crss 110 154 pF

Rg 0.35 0.7 0.85

Qg(10V) 19.2 23 nC

Qg 9.36 11.2 nC

Qgs 2.6 nC

Qgd 4.2 nC

tD(on) 5.2 7.5 ns

tr 4.4 6.5 ns

tD(off)

17.3 25 ns

tf 3.3 5 ns

trr Body Diode + Schottky Reverse Recovery Time IF=8.5A, dI/dt=100A/s 19.3 23 ns

Qrr Body Diode + Schottky Reverse Recovery Charge IF=8.5A, dI/dt=100A/s 9.4 11 nC


COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING



VGS=10V, VDS=15V, ID=8.5A

Total Gate Charge

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

VGS=10V, VDS=15V, RL=1.8,

RGEN

=3

Gate resistance VGS=0V, VDS=0V, f=1MHz

Forward Transconductance VDS=5V, ID=8.5A

Diode+Schottky Forward Voltage IS=1A

Maximum Body-Diode+Schottky Continuous Current

DYNAMIC PARAMETERS

Input CapacitanceVGS=0V, VDS=15V, f=1MHzOutput Capacitance (FET + Schottky)

RDS(ON) Static Drain-Source On-Resistance

VGS=10V, ID=8.5A

VGS=4.5V, ID=7A

mA

Gate-Body leakage current VDS=0V, VGS= 20V

m

Gate Threshold Voltage VDS=VGS ID=250A

On state drain current VGS=4.5V, VDS=5V

Drain-Source Breakdown Voltage ID=250A, VGS=0V

IDSSZero Gate Voltage Drain Current. (Set

by Schottky leakage)

VR=30V

VR=30V, TJ=125C

VR=30V, TJ=150C

Q1 Electrical Characteristics (TJ=25C unless otherwise noted)

Parameter Conditions

STATIC PARAMETERS






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1040

180

110

0.7

VGS=10V, VDS=15V, RL=1.8, RGEN=3

0

5

10

15

20

25

30

0 1 2 3 4 5

VDS(Volts)

Fig 1: On-Region Characteristics

ID(A)

VGS=3V

3.5V

4V

4.5V

10V

0

5

10

15

20

25

30

1 1.5 2 2.5 3 3.5 4

VGS(Volts)

Figure 2: Transfer Characteristics

ID(A)

10

14

18

22

26

0 5 10 15 20 25 30

ID(A)Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

RDS(ON)

(m)

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

0.0 0.2 0.4 0.6 0.8 1.0

VSD(Volts)

Figure 6: Body-Diode Characteristics

(Note F)

IS(A)

125C

FET+SCHOTTKY

0.9

1

1.1

1.2

1.3

1.4

1.5

1.6

1.7

0 50 100 150 200

Temperature (C)

Figure 4: On resistance vs. Junction Temperature

NormalizedOn-Resistance

VGS=10VVGS=4.5V

10

20

30

40

50

60

2 4 6 8 10

VGS(Volts)

Figure 5: On resistance vs. Gate-Source Voltage

RDS(ON)

(m)

VDS=5V

VGS=4.5V

VGS=10V

ID=8.5A

25C

ID=8.5A

125C

25C

25C

125C


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1040

180

110

0.7

VGS=10V, VDS=15V, RL=1.8, RGEN=3

0

2

4

6

8

10

0 4 8 12 16 20

Qg(nC)

Figure 7: Gate-Charge Characteristics

VGS

(Volts)

0

250

500

750

1000

1250

1500

0 5 10 15 20 25 30

VDS(Volts)

Figure 8: Capacitance Characteristics

Capacitance(pF)

Ciss

Coss FET+SCHOTTKY

0

10

20

30

40

0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note E)

Power(W)

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

ZJAN

ormalizedTransient

Th

ermalResistance

Crss

0.1

1.0

10.0

100.0

0.1 1 10 100

VDS(Volts)

ID(A)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

100s

10ms

1ms

0.1s

1s

10s

DC

RDS(ON)

limited

10s

VDS=15V

ID=8.5A

Single Pulse

D=Ton/T

TJ,PK=TA+PDM.ZJA.RJA

RJA=62.5C/W

TonT

PD

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

TJ(Max)=150C

TA=25C

f=1MHz

VGS=0V

TJ(Max)=150C, TA=25C


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