ao4914

AO491430V Dual N-Channel MOSFET with Schottky Diode

General Description Product Summary

Q1(N-Channel) Q2(N-Channel)VDS= 30V 30V

ID= 8A (VGS=10V) 8A (VGS=10V)

RDS(ON) <20.5mΩ RDS(ON) <20.5mΩ (VGS=10V)

RDS(ON) <28mΩ RDS(ON) <28mΩ (VGS=4.5V)

ESD Protected ESD Protected100% UIS Tested 100% UIS Tested

100% Rg Tested 100% Rg Tested

SCHOTTKYVDS = 30V, IF = 3A, VF<0.5V@1A

The AO4914 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. The two MOSFETsmake a compact and efficient switch and synchronousrectifier combination for use in DC-DC converters. ASchottky diode is co-packaged in parallel with thesynchronous MOSFET to boost efficiency further.

SOIC-8

Top View Bottom View

G2S2

G1

S1/A

D2

D2

D1/K

D1/K

Top View

G2

D2

S2

G1

D1

S1

K

A

SymbolVDS

VGS

IDM

IAS, IAR

EAS, EAR

TJ, TSTG

SymbolVDS

IFM

TJ, TSTG

°C

A

mJAvalanche energy L=0.1mH C

-55 to 150

TA=70°C

18

Junction and Storage Temperature Range

Power Dissipation B2

1.3PD

TA=25°C

1.3

18

2

30

8

A

±20

V

6.5

40

19

W

V±20

Absolute Maximum Ratings T A=25°C unless otherwise notedMax Q1

Drain-Source Voltage 30Max Q2

Gate-Source Voltage

UnitsParameter

Pulsed Drain Current C

Continuous DrainCurrent

Avalanche Current C

8ID

TA=25°C

TA=70°C 6.5

40

19

Parameter UnitsReverse Voltage V

Max Schottky30

ATA=70°C

Pulsed Diode Forward Current C

3

2.2

20

Continuous ForwardCurrent

TA=25°CIF

WTA=70°C

Junction and Storage Temperature Range -55 to 150 °C

2

1.28Power Dissipation BTA=25°C

PD

SOIC-8

Top View Bottom View

Pin1

G2S2

G1

S1/A

D2

D2

D1/K

D1/K

Top View

G2

D2

S2

G1

D1

S1

K

A

Rev 11: Mar. 2011 www.aosmd.com of 9

AO4914

Symbolt ≤ 10s

Steady-State

Steady-State RθJL

Symbolt ≤ 10s

Steady-State

Steady-State RθJL

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

°C/W

Parameter Typ Max UnitsMaximum Junction-to-Ambient A

RθJA48 62.5 °C/W

Maximum Junction-to-Ambient A D 74 90

4074 90

RθJA

Maximum Junction-to-Lead 32 40°C/W

48

Thermal Characteristics - MOSFET

Parameter Typ Max UnitsMaximum Junction-to-Ambient A 62.5 °C/W

Thermal Characteristics - Schottky

Maximum Junction-to-Lead °C/W°C/WMaximum Junction-to-Ambient A D

32

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design.B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C.D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.


AO4914

Symbol Min Typ Max Units

BVDSS 30 V

VR=30V 0.05

VR=30V, TJ=125°C 10

VR=30V, TJ=150°C 20

IGSS 10 µA

VGS(th) Gate Threshold Voltage 1.2 1.8 2.4 V

ID(ON) 40 A

17 20.5

TJ=125°C 23.5 29

20.5 28 mΩgFS 30 S

VSD 0.45 0.5 V

IS 3 A

Ciss 575 730 865 pF

Coss 115 165 215 pF

Crss 50 82 120 pF

Rg 0.5 1.1 1.7 Ω

Qg(10V) 12 15 18 nC

Qg(4.5V) 6 7.5 9 nC

Qgs 2.5 nC

Qgd 3 nC

tD(on) 5 nsTurn-On DelayTime

SWITCHING PARAMETERS

Gate resistance VGS=0V, VDS=0V, f=1MHz

Output Capacitance

VDS=0V,VGS=±16V

VDS=VGS ID=250µA

Input Capacitance

Total Gate Charge

VGS=10V, VDS=15V, ID=8AGate Source Charge

Gate Drain Charge

Total Gate Charge

Q1 Electrical Characteristics (T J=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter Conditions

DYNAMIC PARAMETERS

VGS=10V, VDS=5V

VGS=10V, ID=8AmΩ

VGS=4.5V, ID=4A

RDS(ON) Static Drain-Source On-Resistance

Maximum Body-Diode + Schottky Continuous Current

Drain-Source Breakdown Voltage

On state drain current

IS=1A,VGS=0V

VDS=5V, ID=8A

mAIDSSZero Gate Voltage Drain Current (Setby Schottky leakage)

ID=250uA, VGS=0V

VGS=0V, VDS=15V, f=1MHz

Reverse Transfer Capacitance

Gate-Body leakage current

Forward Transconductance

Diode Forward Voltage

tD(on) 5 ns

tr 3.5 ns

tD(off) 19 ns

tf 3.5 ns

trr 8 nsQrr 8 nC





Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs

Turn-Off Fall Time

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=15V, RL=1.8Ω,

RGEN=3Ω

IF=8A, dI/dt=500A/µsBody Diode Reverse Recovery Time

Turn-On DelayTime



AO4914

Q1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1752

10

018

0

5

10

15

20

25

30

1 1.5 2 2.5 3 3.5 4

I D(A

)

VGS(Volts)Figure 2: Transfer Characteristics (Note E)

10

15

20

25

30

0 5 10 15 20

RD

S(O

N)(m

ΩΩ ΩΩ)

ID (A)Figure 3: On-Resistance vs. Drain Current and Gate

Voltage (Note E)

0.8

1

1.2

1.4

1.6

0 25 50 75 100 125 150 175

Nor

mal

ized

On-

Res

ista

nce

Temperature (°C)Figure 4: On-Resistance vs. Junction Temperature

(Note E)

VGS=4.5VID=4A

VGS=10VID=8A

25°C

125°C

VDS=5V

VGS=4.5V

VGS=10V

0

5

10

15

20

25

30

0 1 2 3 4 5

I D(A

)

VDS (Volts)Fig 1: On-Region Characteristics (Note E)

VGS=2.5V

3V

10V 4V5V 3.5V

18

40

0

5

10

15

20

25

30

1 1.5 2 2.5 3 3.5 4

I D(A

)


10

15

20

25

30

0 5 10 15 20

RD

S(O

N)(m

ΩΩ ΩΩ)


Voltage (Note E)

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

0.0 0.2 0.4 0.6 0.8 1.0

I S(A

)

VSD (Volts)Figure 6: Body-Diode Characteristics (Note E)

25°C

125°C

0.8

1

1.2

1.4

1.6

0 25 50 75 100 125 150 175

Nor

mal

ized

On-

Res

ista

nce


(Note E)

VGS=4.5VID=4A

VGS=10VID=8A

10

20

30

40

50

2 4 6 8 10

RD

S(O

N)(m

ΩΩ ΩΩ)

VGS (Volts)Figure 5: On-Resistance vs. Gate-Source Voltage

(Note E)

25°C

125°C

VDS=5V

VGS=4.5V

VGS=10V

ID=8A

25°C

125°C

0

5

10

15

20

25

30

0 1 2 3 4 5

I D(A

)


VGS=2.5V

3V

10V 4V5V 3.5V

FET+Schottky


AO4914


0

2

4

6

8

10

0 3 6 9 12 15

VG

S(V

olts

)

Qg (nC)Figure 7: Gate-Charge Characteristics

0

300

600

900

1200

1500

0 5 10 15 20 25 30

Cap

acita

nce

(pF

)

VDS (Volts)Figure 8: Capacitance Characteristics

Ciss

Coss

Crss

VDS=15VID=8A

1

10

100

1000

0.00001 0.001 0.1 10 1000

Pow

er (W

)

Pulse Width (s)Figure 10: Single Pulse Power Rating Junction -

TA=25°C

0.0

0.1

1.0

10.0

100.0

0.01 0.1 1 10 100

I D(A

mps

)

VDS (Volts)

Figure 9: Maximum Forward Biased

10µs

10s

1ms

DC

RDS(ON) limited

TJ(Max)=150°CTA=25°C

100µs

10ms

0

2

4

6

8

10

0 3 6 9 12 15

VG

S(V

olts

)


0

300

600

900

1200

1500

0 5 10 15 20 25 30

Cap

acita

nce

(pF

)


Ciss

Coss

Crss

VDS=15VID=8A

1

10

100

1000

0.00001 0.001 0.1 10 1000

Pow

er (W

)

Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-

to-Ambient (Note F)

TA=25°C

0.0

0.1

1.0

10.0

100.0

0.01 0.1 1 10 100

I D(A

mps

)

VDS (Volts)

Figure 9: Maximum Forward Biased Safe Operating Area (Note F)

10µs

10s

1ms

DC

RDS(ON) limited


100µs

10ms

0.001

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Zθθ θθJ

AN

orm

aliz

ed T

rans

ient

T

herm

al R

esis

tanc

e

Pulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impe dance (Note F)

In descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

D=Ton/TTJ,PK=TA+PDM.ZθJA.RθJA

RθJA=90°C/W

TonT

PD

Single Pulse


AO4914

Symbol Min Typ Max Units

BVDSS 30 V

VDS=30V, VGS=0V 1

TJ=55°C 5

IGSS 10 µA

VGS(th) Gate Threshold Voltage 1.2 1.8 2.4 V

ID(ON) 40 A

17 20.5

TJ=125°C 23.5 29

20.5 28 mΩgFS 30 S

VSD 0.75 1 V

IS 2.5 A

Ciss 600 740 888 pF

Coss 77 110 145 pF

Crss 50 82 115 pF

Rg 0.5 1.1 1.7 Ω

Qg(10V) 12 15 18 nC

Qg(4.5V) 6 7.5 9 nC

Qgs 2.5 nC

Qgd 3 nC

tD(on) 5 ns

tr 3.5 ns

On state drain current

Output Capacitance

Q2 Electrical Characteristics (T J=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter Conditions

RDS(ON)

IDSS µA

VDS=VGS ID=250µA

VDS=0V, VGS=±16V

Zero Gate Voltage Drain Current

mΩ

VGS=4.5V, ID=4A

Drain-Source Breakdown Voltage ID=250µA, VGS=0V

Static Drain-Source On-Resistance

IS=1A,VGS=0V

Maximum Body-Diode Continuous Current

Input Capacitance

Diode Forward Voltage

DYNAMIC PARAMETERS

VGS=10V, VDS=5V

VGS=10V, ID=8A

Gate-Body leakage current

SWITCHING PARAMETERS

Gate Drain Charge

Total Gate Charge

Reverse Transfer Capacitance

VGS=0V, VDS=0V, f=1MHzGate resistance

Total Gate Charge

VGS=10V, VDS=15V, ID=8AGate Source Charge

VDS=5V, ID=8A

VGS=0V, VDS=15V, f=1MHz

Forward Transconductance

Turn-On DelayTime

Turn-On Rise Time VGS=10V, VDS=15V, RL=1.8Ω,tr 3.5 ns

tD(off) 19 ns

tf 3.5 ns

trr 6 8 10 nsQrr 14 18 22 nC





Turn-On Rise Time

Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs

Turn-Off DelayTime

IF=8A, dI/dt=500A/µs

VGS=10V, VDS=15V, RL=1.8Ω,

RGEN=3Ω

Body Diode Reverse Recovery Time

Turn-Off Fall Time



AO4914


1752

10

018

0

5

10

15

20

25

30

1 1.5 2 2.5 3 3.5 4

I D(A

)


10

15

20

25

30

0 5 10 15 20

RD

S(O

N)(m

ΩΩ ΩΩ)


Voltage (Note E)

0.8

1

1.2

1.4

1.6

0 25 50 75 100 125 150 175

Nor

mal

ized

On-

Res

ista

nce


(Note E)

VGS=4.5VID=4A

VGS=10VID=8A

25°C

125°C

VDS=5V

VGS=4.5V

VGS=10V

0

5

10

15

20

25

30

0 1 2 3 4 5

I D(A

)


VGS=2.5V

3V

10V

3.5V4V

5V

18

40

0

5

10

15

20

25

30

1 1.5 2 2.5 3 3.5 4

I D(A

)


10

15

20

25

30

0 5 10 15 20

RD

S(O

N)(m

ΩΩ ΩΩ)


Voltage (Note E)

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

0.0 0.2 0.4 0.6 0.8 1.0 1.2

-IS

(A)

-VSD (Volts)Figure 6: Body-Diode Characteristics (Note E)

25°C

125°C

0.8

1

1.2

1.4

1.6

0 25 50 75 100 125 150 175

Nor

mal

ized

On-

Res

ista

nce


(Note E)

VGS=4.5VID=4A

VGS=10VID=8A

10

15

20

25

30

35

40

2 4 6 8 10

RD

S(O

N)(m

ΩΩ ΩΩ)

VGS (Volts)Figure 5: On-Resistance vs. Gate-Source Voltage

(Note E)

25°C

125°C

VDS=5V

VGS=4.5V

VGS=10V

ID=8A

25°C

125°C

0

5

10

15

20

25

30

0 1 2 3 4 5

I D(A

)


VGS=2.5V

3V

10V

3.5V4V

5V


AO4914


0

2

4

6

8

10

0 3 6 9 12 15

VG

S(V

olts

)


0

200

400

600

800

1000

1200

0 5 10 15 20 25 30

Cap

acita

nce

(pF

)


Ciss

Coss

Crss

VDS=15VID=8A

1

10

100

1000

0.00001 0.001 0.1 10 1000

Pow

er (W

)

Pulse Width (s)Figure 10: Single Pulse Power Rating Junction -

TA=25°C

0.0

0.1

1.0

10.0

100.0

0.01 0.1 1 10 100

-ID

(Am

ps)

-VDS (Volts)

Figure 9: Maximum Forward Biased Safe

10µs

10s

1ms

DC

RDS(ON)


100µs

10ms

0

2

4

6

8

10

0 3 6 9 12 15

VG

S(V

olts

)


0

200

400

600

800

1000

1200

0 5 10 15 20 25 30

Cap

acita

nce

(pF

)


Ciss

Coss

Crss

VDS=15VID=8A

1

10

100

1000

0.00001 0.001 0.1 10 1000

Pow

er (W

)

Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-

to-Ambient (Note F)

TA=25°C

0.0

0.1

1.0

10.0

100.0

0.01 0.1 1 10 100

-ID

(Am

ps)

-VDS (Volts)

Figure 9: Maximum Forward Biased Safe Operating Area (Note F)

10µs

10s

1ms

DC

RDS(ON)


100µs

10ms

0.001

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Zθθ θθJ

AN

orm

aliz

ed T

rans

ient

T

herm

al R

esis

tanc

e

Pulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impe dance (Note F)

In descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

D=Ton/TTJ,PK=TA+PDM.ZθJA.RθJA

RθJA=90°C/W

TonT

PD


AO4914

-

+VDC

Ig

Vds

DUT

-

+VDC

Vgs

Vgs

10V

Qg

Qgs Qgd

Charge

Gate Charge Test Circuit & Waveform

-

+VDC

DUT VddVgs

Vds

Vgs

RL

Rg

Vgs

Vds

10%

90%

Resistive Switching Test Circuit & Waveforms

t trd(on)

ton

td(off) t f

toff

Id

L

Vds

BV

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

Vds DSS

2E = 1/2 LIARAR

-

+VDC

Ig

Vds

DUT

-

+VDC

Vgs

Vgs

10V

Qg

Qgs Qgd

Charge

Gate Charge Test Circuit & Waveform

-

+VDC

DUT VddVgs

Vds

Vgs

RL

Rg

Vgs

Vds

10%

90%

Resistive Switching Test Circuit & Waveforms

t trd(on)

ton

td(off) t f

toff

VddVgs

Id

Vgs

Rg

DUT

-

+VDC

L

Vgs

Vds

Id

Vgs

BV

I

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

Ig

Vgs

-

+VDC

DUT

L

Vds

Vgs

Vds

IsdIsd

Diode Recovery Test Circuit & Waveforms

Vds -

Vds +

I F

AR

DSS

2E = 1/2 LI

dI/dt

I RM

rr

VddVdd

Q = - Idt

ARAR

t rr


ao4914

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