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TDPS500E2C1 12/18/2014, JC 1 Application Note: TDPS500E2C1Totem Pole PFC Evaluation Board 1. Introduction The Evaluation Board for a bridgeless totem-pole Power-Factor-Correction (PFC) circuit, using Transphorm GaN power HEMTs, is described in this paper. In this board, by using a diode-free GaN power HEMT bridge with low reverse-recovery charge, very-high-efficiency single-phase AC-DC conversion is realized. In this circuit, the performance and efficiency improvement, achieved by use of the GaN HEMTs in the fast-switching leg of the circuit, is further enhanced by use of low resistance MOSFETs in the slow-switching leg. The evaluation board is shown in Fig. 1. Fig.1 Totem pole PFC Evaluation Board Output Voltage + - - Input High Voltage L N GaN HEMTs Auxiliary Supply: 12Vdc GND +

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Page 1: Application Note: TDPS500E2C1Totem Pole PFC Evaluation Board · Application Note: TDPS500E2C1Totem Pole PFC Evaluation Board 1. Introduction The Evaluation Board for a bridgeless

TDPS500E2C1

12/18/2014, JC 1

Application Note:

TDPS500E2C1Totem Pole PFC Evaluation Board

1. Introduction

The Evaluation Board for a bridgeless totem-pole Power-Factor-Correction (PFC) circuit, using

Transphorm GaN power HEMTs, is described in this paper. In this board, by using a diode-free

GaN power HEMT bridge with low reverse-recovery charge, very-high-efficiency single-phase

AC-DC conversion is realized. In this circuit, the performance and efficiency improvement,

achieved by use of the GaN HEMTs in the fast-switching leg of the circuit, is further enhanced

by use of low resistance MOSFETs in the slow-switching leg. The evaluation board is shown in

Fig. 1.

Fig.1 Totem pole PFC Evaluation Board

Output Voltage + -

-

Input High Voltage (AC)

L N

P

GaN HEMTs

Au

xilia

ry S

up

ply

: 1

2V

dc

GND

+

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2. TDPS500E2C1 Input/output Specifications:

• Input voltage:between100 Vac to 250 Vac;

• Input current: 4.5 A (rms) (500 W at 115 Vac, 1000 W at 230 Vac);

• Output: 390 Vdc ± 5 V;

• PWM Frequency: 50 kHz;

• Auxiliary Supply (12 Vdc for bias voltage).

3. Circuit Description for Totem pole bridgeless PFC based on GaN HEMT

The totem-pole bridgeless topology is shown in Fig. 2. As shown in Fig. 2(a), two GaN HEMT

and two diodes are used for the line rectification, while in Fig. 2(b),the circuit is modified and

the diodes are replaced by two low resistance silicon MOSFETs to eliminate diode drop and

improve the efficiency. The topology in Fig. 2(b) looks the same as any single-phase converter;

however, it is controlled as the original totem-pole bridgeless PFC shown in Fig. 2(a); therefore,

it is labeled the totem-pole bridgeless PFC with MOSFET for line rectification. Further

information and discussion on the performance and the characteristics of bridgeless PFC circuit

is provided in [1].

(a) (b)

Fig.2 Totem-pole bridgeless PFC boost converter based on GaN HEMT (a) Diode for line rectification (b)

MOSFET for line rectification

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The large reverse recovery charge (Qrr) of existing silicon MOSFETs makes CCM operation of

a silicon totem-pole bridgeless PFC impractical, and reduces the total efficiency. The industry’s

1st qualified 600-V GaN HEMTs made on low-cost Si substrates has been announced by

Transphorm Inc. These 1st-generation GaN power devices show a low on-resistance of 0.15 ohm

typical and are capable of reverse conduction during dead time with a low Qrr of 54 nC, 20 times

lower than state-of-the-art Si counterpart as seen in Fig.3. These features can remarkably expand

operation space of a hard-switched bridge.

Fig.3 Reverse recovery charge test result for a Si MOSFET and a GaN HEMT with similar on resistance,

showing a 20x reduction of Qrr for GaN.

Table 1 gives a comparison of CoolMOS and GaN HEMT. The low Qrr will help reducing

excessive spikes during start-up process in a LLC dc-dc converter.

Table 1: Comparison of GaN HEMT with equivalent CoolMOS IPP60R190C6

Parameter TPH3206PS/TPH3206PS IPP60R190C6

ID 17A (continuous) 20.2A (for D=0.75)

Ron 150mΩ 170mΩ

Qg 6.2nC 63nC

Eoss(400V) 5.1uJ 5.2uJ

Qrr 54nC 6.9uC

Si MOSFET GaN

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A GaN HEMT totem pole PFC in CCM mode focusing on minimizing conduction losses was

designed with a simplified schematic shown in Fig.4(a). It consists of a pair of fast GaN HEMT

switches (Q1& Q2) operating at a high pulse-width-modulation (PWM) frequency and a pair of

slow but very-low resistance MOSFETs (S1 & S2) operating at a much slower line frequency

(60Hz). The primary current path includes one fast switch and one slow switch only, with no

diode drop. The function of S1 & S2 is that of a synchronized rectifier as illustrated in Fig.4(b)

and Fig.4(c). During positive ac cycle, S1 is on and S2 off, forcing the ac neutral line tied to the

negative terminal of the dc output. The opposite applies for the negative cycle.

Fig. 4.GaN totem pole PFC (a) simplified schematics and illustration during (b) positive ac cycle and (c)

negative ac cycle.

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In either ac polarity, the two GaN HEMTs form a synchronized boost converter with one

transistor acting as a master switch to allow energy intake by the boost inductor (LB) and another

transistor as a slave switch to release energy to the dc output. The roles of the two GaN devices

interchange when the polarity of the ac input changes; therefore, each transistor must be able to

perform both master and slave functions. To avoid shoot through, a dead time is built in between

two switching events during which both transistors are momentarily off. To allow CCM

operation, the body diode of the slave transistor has to function as a flyback diode for the

inductor current to flow during dead time. The diode current however, has to quickly reduce to

zero and transition to the reverse blocking state once the master switch turns on. This is the

critical process for a totem pole PFC which previously led to abnormal spikes, instability and

associated high switching losses due to the high Qrr of the body diode in modern high-voltage Si

MOSFETs. The low Qrr of the GaN switches allow designers to overcome this barrier. As seen

in Fig. 5, inductive tests at 400-V bus using either low-side or high-side GaN transistor as a

master switch show healthy voltage waveforms up to inductor current exceeding 12 A. With a

design goal of 1 kW output power in CCM mode at 230V ac input the required inductor current

is 6 A. This test conforms a successful totem-pole power block with 2x current overhead.

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Fig.5Hard-switched waveforms of a pair of GaN HEMT switches when setting a) low side as master

device and b) high side as master

One inherent issue in totem-pole bridgeless PFC is the operation mode transition at AC voltage

zero-crossing. For instance, when the circuit operation mode changes from positive half line to

negative half line at the zero-crossing, the duty ratio of switch Q1 changes abruptly from almost

100% to 0%, and the duty ratio of switch Q2 changes from 0% to 100%. Due to the slow reverse-

recovery of diodes (or body diode of MOSFET), the voltage VD cannot jump from ground to VDC

instantly, a current spike will be induced. To avoid the problem, a soft-start at every zero-

crossing is implemented to gently reverse duty ratio. Since the TDPS500E2C1totem-pole

bridgeless PFC is designed to run in CCM, the larger inductance actually alleviates the current

-3

0

3

6

9

12

15

-100

0

100

200

300

400

500

-0.1 1.9 3.9 5.9 7.9 9.9

Vs(V) IL(A)

-3

0

3

6

9

12

15

-100

0

100

200

300

400

500

-0.1 1.9 3.9 5.9 7.9 9.9

Vs(V) IL(A)

t (ms)

t (ms)

Vs

(V)

Vs

(V)

I L(A

)I L

(A)

(a)

(b)

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spike issue at zero-crossing. A soft-start time for a few switching cycles is enough to handle this

problem.

The circuit schematic and bill of materials for totem-pole bridgeless PFC evaluation board are

shown in Fig. 6 and Table.2 respectively.

For this evaluation board, the PFC circuit has been implemented on a 4-layer PCB. The GaN

HEMT half-bridge is built with TPH3206PS devices by Transphorm, Inc. The slow Si switches

are IPA60R099C6600V super junction MOSFETs with 0.1 ohm on-resistance. The inductor is

made of a MPP core with inductance of 1.3 mH and a dc resistance 88 mΩ, designed to operate

at 50 kHz. Drain-tab and source-tab GaN HEMT packages are used, one on the top and another

on the bottom side for the least electrical lengths between these fast switches, hence minimizing

power loop inductances. A simple 0.5-A rated high/low side driver IC with 0/10 V as on/off

states directly drives each GaN HEMT. 150 MHz DSP controller - TMS320F28335 handles the

control algorithm. The voltage and current loop control is similar to conventional boost PFC

converter. The feedback signals are dc output voltage (VO), ac input potentials (VACP and VACN)

and inductor current (IL). The input voltage polarity and RMS value are determined from VACP

and VACN. The outer voltage loop output multiplied by |VAC| gives sinusoidal current reference.

The current loop gives the proper duty-ratio for the boost circuit. The polarity determines how

PWM signal is distributed to drive Q1 & Q2. A soft-start sequence with a duty ratio ramps is

employed for a short-period at each ac zero-crossing for better stability.

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Fig.6. Totem Pole PFC Evaluation Board Schematics

Table.2. Bill of Materials

Qty

Value Device Parts Manf Manf P/N

1 DNI 529802B02500G HS1 Avid 529802B02500G

1 74AUC1G17DBV IC4 Texas Instruments SN74AUC1G17DBVR

1 CASR6-NP_2 U3 LEM USA CASR 6-NP

2 DIODE-DO-214AC D3, D4 Micro Commercial ES1J-LTP

1 FCI-20020316-2P CN4 FCI

20020316-H021B01LF

2 FCI_20020316-3P CN1, CN2 FCI

20020316-H031B01LF

1 G2RL-1A-E K1 Omron G2RL-1A-E DC12

1 GBJ2506 D2 Micro Commercial GBJ2506-BP

1 DNI L_BLPFC1 L2

1 MA04-1 SV2 3M 961104-6404-AR

1 MA07-2 SV1 FCI 67996-114HLF

1 SHK20L F1 Little Fuse 52000001009

6 DNI TESTPOINT-KEYSTONE5015 TP1, TP2, TP3, TP4, TP5, TP6 KEYSTONE 5015

2 DNI TPH_TO220VERT_TRI Q2, Q3 Transphorm TPH3206PS

1 V7805-500 U1 CUI 7805-500

2 .1u C-EUC0603 C35, C44 Kemet C0603C104J3RACTU

16 .1u C-EUC0805

C2, C5, C9, C11, C16, C17, C18, C19, C24, C31, C32, C33, C37, C39, C42, C50

AVX 08053C104KAT2A

2 .1u C-EUC1812 C22, C23 Kemet C1812V104KDRACTU

2 0.47u/275V

ECQ-U2A474ML C12, C13 Panasonic ECQ-U2A474ML

2 10 R-US_R0805 R1, R3 Panasonic ERJ-6GEYJ100V

1 100k R-US_R0805 R26 Panasonic RJ-6ENF1003V

2 100u PANASONICFPV C3, C7 Panasonic EEE-FPE101XAP

4 10k R-US_R0805 R2, R4, R7, R24 Panasonic ERJ-6ENF1002V

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5 10u C-EUC1206 C4, C6, C8, C10, C38 AVX 12063D106KAT2A

2 120Ohm L-SMD0603 L6, L7 TDK MMZ1608Q121B

1 1N4148 DIODE-SOD123 D1 Vishay 1N4148W-E3-18

1 1k R-US_R0805 R6 Panasonic ERJ-6ENF1001V

5 1n C-EUC0805 C26, C27, C28, C30, C45 Yageo CC0805KRX7R9BB102

1 1u C-EUC0805 C1 Yageo CC0805ZRY5V8BB105

2 2.2n PHE850YCAP C14, C15 Kemet

PHE850EA4220MA01R17

1 20K R-US_R0805 R18 Panasonic ERJ-6ENF2002V

2 22u C-EUC1206 C40, C41 AVX 12103D226KAT2A

3 27k R-US_R0805 R15, R16, R17 Panasonic ERJ-6ENF2702V

6 2M R-US_R1210 R8, R9, R10, R11, R12, R14 Rohm KTR25JZPF2004

1 3.3n C-EUC0805 C29 Kemet C0805C332K5RACTU

1 30k R-US_R0805 R21 Panasonic ERJ-6ENF3002V

2 3M R-US_R0805 R25, R27 Panasonic ERJ-6GEYJ305V

2 4.7 R-US_R1206 R22, R23 Panasonic ERJ-8RQF4R7V

4 4.7u C-EUC1206 C34, C36, C43, C46 Kemet C0805C475K4PACTU

1 DNI ALC10A471DF450 _ 470u/450V C25 Kemet ALC10A471DF450

3 7.5K R-US_R0805 R13, R19, R20 Panasonic ERJ-6ENF7501V

1 DNI WURTHER_7448258022 L3 Wurth 7448258022

3 8.2n C-EUC1206 C20, C21, C47 TDK C3216C0G2J822J160AA

2 APT106N60B2C6

STH60N10W Q1, Q4 MicroSemi APT106N60B2C6

2 B32672P4225

B32672P4225 C48, C49 Epcos B32672P4225K

1 DNI DIM100_TICONTROLCARD CN3

1 FDV301N

BSS138-7-F Q5 Fairchild FDV301N

1 LT1719 LT1719 U4 Linear Technology LT1719CS6#TRMPBF

1 NC7SZ14M5X

NC7SZ14M5X U5 Fairchild NC7SZ14M5X

3 OPA2376 AD826R IC1, IC2, IC3 Texas Instruments OPA2376AIDR

1 DNI PFC-03200-00 L1 Precision PFC-03200-00

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1 SI8230 SI8230 U7 Silicon Labs SI8230BB-B-IS1

1 SI8233 SI8233 U6 Silicon Labs SI8233BB-C-IS1

1 SL18 30006

SL18_30006 R5 Ametherm SL18 30006

1 TPS73033

TPS73033 U2 Texas Instruments TPS73033DBVR

While a typical Si MOSFET has a maximum dV/dt rating of 50V/ns, the TransphormGaN

HEMT will switch at dV/dt of 100V/ns or higher to enable the lowest possible switching loss. At

this level of operation, even the layout becomes a significant contributor to performance. As

shown below, in Fig. 7-9, the recommended layout keeps a minimum gate drive loop; it also

keeps the traces between the switching nodes very short, with the shortest practical return trace

to power bus and ground. As the power ground plane provides a large cross sectional area to

achieve an even ground potential throughout the circuit. The layout carefully separates the power

ground and the IC (small signal) ground, only joining them at the source pin of the HEMT to

avoid any possible ground loop.

Note that the Transphorm GaN HEMTs in TO220 package has pin out configured as G-S-D,

instead of traditional MOSFET’s G-D-S arrangement. The configuration is designed with

thorough consideration to minimize the Gate-Source driving loop to reduce parasitic inductance,

as well as to separate the driving loop (Gate-Source) and power loop (Drain-Source) to minimize

noise. For further information, different layers of TDPS500E2C1design are shown in Fig. 8-10.

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Fig. 7. Totem Pole PFC Evaluation Board Layout, Top Layer

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Fig. 8. Totem Pole PFC Evaluation Board Layout, Bottom Layer

Fig. 9. Totem Pole PFC Evaluation Board Layout, Middle Layers

Startup sequence:

See the warning and procedure at page 19:

1) Connect a load; the load should be resistive.

The requirement for the resistive load:

– At 115 Vac input: ≥ 50 W and ≤ 500 W

– At 230 Vac input: ≥ 100 W and ≤ 1000 W

2) Connect the 12 Vdc auxiliary supply (a lab bench level power supply);

3) With power off, Connect external EMI filter (10DWCG5 or similar) to the input

terminals of the totem-pole PCB.

Load of EMI filter should be fed to the PCB.

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Line of the EMI connects to the AC source.

4) Connect the high-voltage AC power input to the corresponding marking on the EMI

LINE terminals;

5) Place a cooling fan facing the GaN HEMTs heat sink (provide a minimum of 30 CFM

air flow);

6) Enable 12 Vdc bias by turn on the bench supply;

7) Turn on the cooling fan;

8) Turn on the AC power input (100 Vac to 250 Vac).

Turn off sequences:

1) Switch off the high-voltage AC power input;

2) Power off dc bias;

3) Turn off the fan.

Fig.10shows the converter start-up, CH3 shows the DC bus voltage rapidly rising with

simple rectification at the beginning and then ramping up to 400V under control, while the

inductor current is kept under 1A during the start-up process. Fig.11and Fig.12show

experimental waveforms under 1KW full load. In Figure 11(a), voltage VD is either 0 V or 400 V

according to the input phase. Figure 11(b) shows the PFC functionality in an isolated

oscilloscope. The power factor is 0.9998 according to power analyzer reading.

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Fig.10 Start-up of the totem-pole bridgeless PFC prototypes (CH1: AC Polarity, CH2: inductor current,

CH3: Vo, CH4: Vd)

(a) (b)

Fig.11 Waveform of the active switch version of the totem-pole bridgeless PFC at full load 1KW;

(a) CH1: PWM Gate signal for SD2; CH2: IL waveform (5A/division); CH3: VDwaveform(100V/division);

CH4: AC input polarity signal(b) CH2: Input AC voltage(100V/division); CH3: input AC current

(5A/division)

Li

Polarity

DV

2DG S

ACi

ACV

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Fig.12 shows the transitions between two half cycles. In Fig.12(a), the AC line enters the

negative half. Soft-start gradually increases voltage VD from 0V to 400 V. While in Fig. 12(b),

VD decreases from 400 V to 0 V.

(a) (b)

Fig. 12 Zero-crossing transitional waveform (a) from positive to negative half cycle (b) from negative to

positive half cycleCH1: AC input polarity; CH2: IL waveform; CH3: VD waveform; CH4: PWM gate for

SD2

For the efficiency measurement, the input/output voltage and current will be measured for the

input/output power calculation with a power analyzer. Efficiency has been measured at 115 Vac

or 230 Vac input and 400 Vdc output using the WT1800 precision power analyzer from

Yokogawa. The efficiency results for this Totem Pole PFC board are shown in Fig. 13 and Fig.

14. The extremely high efficiency of >99% at 230Vac input, and >98% at 115V ac input is the

highest among PFC designs with similar PWM frequency; this high efficiency will enable

customers to reach peak system efficiency to meet and exceed Titanium standards.

Polarity DV

Li

2DG S 2DG S

Li

DV

Polarity

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Table 3. The power and efficiency result for Totem Pole PFC board at115Vac input

Pin (W) Pout (W) Ploss (W) Eff (%)

74.83 72.67 2.16 97.107

113.92 111.36 2.56 97.755

173.81 170.47 3.34 98.078

219.02 214.86 4.16 98.101

290.9 285.07 5.83 98.012

405.6 396.23 9.37 97.683

512.2 498 14.2 97.23

Fig. 13. The efficiency result for Totem Pole PFC board at 115 Vac input

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Table 4. The power and efficiency result for Totem Pole PFC board at 230Vac input

Pin (W) Pout (W) Ploss (W) Eff (%)

113.21 111.38 1.83 98.38

172.54 170.34 2.2 98.728

276.37 273.56 2.81 98.982

388.36 384.67 3.69 99.05

447.92 443.7 4.22 99.048

563.7 558.2 5.5 99.015

676.2 669.1 7.1 98.951

842 831.8 10.2 98.792

1000.1 986.5 13.6 98.645

Fig. 14. The efficiency result for Totem Pole PFC board at 230 Vac input

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Warning:

This demo board is intended to demonstrate GaN HEMT technology. While it provides the main

features of a totem-pole PFC, it is not intended to be a finished product and does not have all the

protection features found in commercial power supplies. Along with this explanation go a few

warnings which should be kept in mind:

1. An isolated AC source should be used as input; an isolated lab bench grade power supply

should also be used for the 12V DC power supply. Float the oscilloscope by using an isolated

oscilloscope or by disabling the PE (Protective Earth) pin in the power plug. Float the current

probe power supply (if any) by disabling the PE pin in the power plug.

2. Use a resistor load only. The Totem-pole PFC kit also has a minimum load requirement. It

DOES NOT work at no load.

3. The demo board is not intended to handle large load steps. DO NOT apply a large step in the

load when it is running.

(Load Step must <450 W, which is from 10% load to 100% load of 500 W. The demo board can

run up to 1 KW at high line, but the DC bus cap (470 uF) is not big enough to handle more than

450 W step load at high line. Unload more than 450 W at high line could trigger over-voltage

protection in the DSP program.)

4. The demo board is intended to run for short time. Do NOT run it for a very long time (more

than 8 hours).

5. DO NOT manually probe the waveforms when the demo is running. Set up probing before

powering up the demo board.

6. The auxiliary Vcc supply must be 12 V. The demo board will not work under, for example

10 V or 15V Vcc.

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7. DO NOT touch any part of the demo board when it is running.

8. Use the TEST MODE control card to verify the functionality of a newly received demo board

before applying high AC voltage directly. This will uncover any defects which may have

occurred in shipping or any test-setup errors. Refer to “TEST MODE PROCEDURE” in this

application note.

9. When plugging the control cards into the socket, make sure the control cards are fully pushed

down with a clicking sound.

10. If the demo circuit goes into protection mode it will work as a diode bridge by shutting down

all PWM functions. Recycle the bias power supply to reset the DSP and exit protection mode.

TEST MODE PROCEDURE:

1. Install the test mode control card.

2. Turn on the 12 V bias power supply. Take a look the control card to make sure it is in test

mode one. The test mode control card is F28027 DSP, which is a smaller package. All three LED

should be ON and not blinking. (In normal operation mode the control card has a blinking LED,

and it is the F28335 DSP with a bigger package)

3. Connect external EMI filter (10DWCG5 or similar) to the input terminals of the totem-pole

PCB.

Load of EMI filter should be fed to the PCB.

Line of the EMI connects to the AC source.

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4. Connect the isolated AC source; set the protection current limit to 1A. Connect a load resistor

of about 200 Ohms.

(Please notice that 200 Ohm load for 390 V DC bus of normal operation is around 800 W load,

but it is very small load here because the DC bus for this test is no more than 60 V. Any load

between 400 Ohm to 160 Ohm is fine for this test, that is 400 W to 1000 W load for 390 V DC

bus of normal operation. Please DO NOT use light load such as 50 W/100 W for 390 V DC bus

for this test at low voltage.)

5. Connect Probes: Probe the Vg of the LS sync-rec MOSFET; the line frequency switching node

of the sync-rec MOSFET; and the input current.

6. Slowly turn-on the AC source from 0 V. The demo board first works as a diode-bridge

rectifier. The DSP will close the loop when input reaches around 22 Vac.

7. Further increase the AC source up to 35 Vac, the sync-rec MOSFET will be also turned on in

this case.

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Test mode control cards:

Picture for F28027 Control card on Totem pole for Test at Low Voltage (0-35 Vac) only.

All 3 LED are ON.

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Picture of Totem Pole with the F28335 control card for Normal operation.

First Green LED is always ON indicating DSP Power;

The second LED is blinking indicating that the DSP is running;

The Third LED will light when the DSP program stops due to fault protection (over voltage or

current).

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Probing Points:

Waveform as a diode bridge in between 0 Vac to 22 Vac:

(Ch2: Iin; Ch3: Vd; Ch4: Vg)

1S

2S

1DS

2DS

sV

DV

Li

acV

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Waveform as a closed loop PFC without MOSFET sync-rec (between 22 Vac to 32 Vac):

(Ch2: Iin; Ch3: Vd; Ch4: Vg)

Waveform as closed loop PFC with MOSFET sync-rec (more than 32 Vac):

(Ch2: Iin; Ch3: Vd; Ch4: Vg)

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If the demo board works as described here, removed the control card for test and use the F28335

control card for normal operation. The control card for test mode should only be used to test the

setup or functionality of the demo board at low voltage as specified here.

If you did not see a proper waveform as in the pictures, or the AC source is in over-current

mode. Please do not use the demo kit. Contact a representative of Transphorm for additional

support.

REFERENCE:

[1]. Liang Zhou, Yi-Feng Wu and Umesh Mishra, “True Bridgeless Totem-pole PFC based on

GaN HEMTs”, PCIM Europe 2013, 14-16 May, 2013, pp.1017-1022.

[2]. L. Huber, Y. Jang, and M. M. Jovanovic, “Performance evaluation of bridgeless PFC boost

rectifiers,” IEEE Transactions on Power Electronics, Vol. 23, No. 3, pp. 1381-1390, May 2008.