applied centura rp epi system for nmos and pmos transistors nmos... · 2013-09-06 · external use...
TRANSCRIPT
External Use
Applied Centura® RP Epi System
for nMOS and pMOS Transistors
Schubert Chu, Ph.D.
Epitaxy Products
Transistor and Metallization Products
July 8, 2013
External Use Silicon Systems Group
Mobility Era Introduction
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3
PC era
Performance vs. power Low Power with High Performance
2000 2013 and beyond
Images Source: Device manufacturers public announcements and conference publications; Data sources: IBM Microelectronics, IBM, IC Insights
Higher
Materials
Intensity
3D FinFET
3D NAND
SOC
New materials
3D Scaling
Transistor Performance
Increase From Materials at each node
~15% ~90%
PC + MOBILITY era
2D Scaling
Silicon Systems Group 3
Transistors are at the Heart
of High Performance
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Transistors are the Heart of High Performance
5
Source: International Roadmap for Semiconductors
CMOS technology includes both nMOS and pMOS type of
transistors each with their own optimization challenges
Passivation
Dielectric
Etch Stop
Dielectric Capping Layer
Copper Conductor with
Barrier/Nucleation Layer
Wire
Via Global
Semi-Global
Intermediate
Metal 1 Pre-Metal Dielectric
Tungsten Contact Plug
Silicon Systems Group
nMOS Type Transistor
pMOS Type Transistor
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Epitaxy Enhances Mobile Processor Performance
6
22/20nm 28/32nm 65nm 45/40nm 90nm 130nm
nMOS Transistor
pMOS
Epi
Silicon Systems Group
1ST GEN Multi-Touch,
Mobile Gaming
2ND GEN High-Res Display,
Video Chat
3RD GEN Voice Recognition, 1080p
Video, More Multi-Tasking
FUTURE Next Gen Voice Recognition,
Augmented Reality
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7
OXYNITRIDE
TRANSISTOR
HIGH-K
METAL GATE
TRANSISTOR
FINFET
TRANSISTOR
2005 2006 2007 2008 Current 1980’s 1990’s 2000
SELECTIVE EPI
TRANSISTOR
pMOS
Epi
nMOS
Epi FinFET
High-k/
Metal Gate
Poly/
Oxynitride
90nm 45nm 20nm
Future
Epitaxy plays a key role in transistor evolution
Evolution of the Transistor
Silicon Systems Group
What is Epitaxy?
Why is it Needed?
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What is Epitaxy?
9
Epitaxial
Layer
Silicon
Substrate
Growing a
monocrystalline film
which takes on a lattice
structure and orientation
identical to the substrate
This enables a high-
purity starting point for
building a
semiconductor device
Silicon Systems Group
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Strain Engineering with Epitaxy
SiGe
Layer
Silicon
Substrate
Silicon Atom
Germanium Atom
Introduction of larger
atoms during epitaxial
deposition to induce
strain
Larger Lattice Constant
Smaller Lattice Constant A Germanium lattice is 4%
larger than that of Silicon
10 Silicon Systems Group
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Close Up View of Strain Engineering
Key to enhancing channel mobility
11 Silicon Systems Group
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Epitaxy Enhances Transistor Speed
without Increasing Leakage
12
1.E-09
1.E-07
1.E-05
1.E-03
100 300 500 700
On-State Current (mÅ/µm)
Off-S
tate
Cu
rren
t (m
Å/µ
m)
REFERENCE
SELECTIVE EPI
► 2X revenue in last 5 years
with >80% share
► <25 to >500 systems (2002-2013F)
>60% Drive Current
Improvement
Silicon Systems Group
nMOS Epitaxy
THE FOCUS OF TODAY’S
ANNOUNCEMENT
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Helpful Strain in Transistors
with Selective Material Deposition
Increased
electron
mobility
through tensile
strain in nMOS
transistor
TENSILE STRAIN
nMOS CHANNEL nMOS Epi S/D nMOS Epi S/D
Achieved by incorporating smaller P or C & P atoms A Carbon atom size is 62% that of a Silicon atom
Silicon Systems Group
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nMOS Transistor Boost by Selective Epitaxy
180nm 130nm 90nm 65nm 45/40nm 32/28nm 22/20nm
15
Drive
Cu
rre
nt =
Sp
ee
d
Silicon Systems Group
Epitaxy contributes
20% of nMOS mobility
enhancement
@ 20nm
Source: Device manufacturers public announcements and conference publications.
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COMPRESSIVE
STRAIN ON
CHANNEL
INCREASES DRIVE
CURRENT
Benefits of Epitaxy in
Advanced Transistors
PRECISION
CHANNEL MATERIAL
ENABLES GATE
PERFORMANCE
RAISED SOURCE /
DRAIN EPI KEEPS
METAL CONTACT AWAY
FROM CHANNEL
Silicon Systems Group
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0
2
4
6
8
45nm 32/28nm 22/20nm 16/14nm 10nm
Ep
i S
tep
s
Epitaxy Delivers Transistor Speed with
Low Leakage
Oxynitride High-k Metal Gate FinFET Selective Epi
4X INCREASE
IN STEPS
► New Epi materials
will be key driver for
transistor speed
beyond 20nm
► Revenue doubled in
last 5 years with
>80% share
► >500 systems
shipped and
counting
17 Silicon Systems Group
Leadership in Epitaxy
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2010 2000 2002 2004 2006 2012 2014F 2016F 2018F 2008
SELECTIVE EPI RP Epi
Si/SiGe
RP Epi
SiP/SiCP
Siconi
Pre-Clean
pMOS nMOS
BLANKET EPI ATM Epi
NEW MATERIALS EPI High Mobility
Channel Engineering
ATM: Atmospheric pressure
RP: Reduced Pressure
What’s Next: New Materials Epitaxy
Pure, Crystalline Films
for Building Transistors
Strain
Engineering
Silicon Systems Group
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Market Driving for New Channel Materials
Si Ge GaAs InAs InSb
Electron
Mobility
1500 3900 9200 40000 77000
Hole
Mobility
430 1900
III – V MATERIALS
Higher electron mobility for nMOS
Higher hole
mobility for pMOS
Higher speeds at lower power (lower supply voltage)
GROUP IV
Silicon Systems Group
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21
nMOS Epitaxy is
essential for
faster transistors
inside next-gen
mobile processors
nMOS Epitaxy boosts
transistor speed by the equivalent of
half a device node
without increasing
off-state power
consumption
Applied Centura® RP Epi
System for nMOS and
pMOS Transistors
Silicon Systems Group
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