BA

S21

BAS21

General Purpose High Voltage DiodeSourced from Process 1H. See MMBD1401 for characteristics.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value UnitsWIV Working Inverse Voltage 250 V

IO Average Rectified Current 200 mA

IF DC Forward Current 600 mA

if Recurrent Peak Forward Current 700 mA

if(surge) Peak Forward Surge CurrentPulse width = 1.0 secondPulse width = 1.0 microsecond

1.02.0

AA

Tstg Storage Temperature Range -55 to +150 °CTJ Operating Junction Temperature 150 °C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max UnitsBAS21

PD Total Device DissipationDerate above 25°C

3502.8

mWmW/°C

RθJA Thermal Resistance, Junction to Ambient 357 °C/W

ã 2002 Fairchild Semiconductor Corporation BAS21. Rev. A1

SOT-23

3

1

2

A82.

3

1 2 2 NC

3

1

CONNECTION DIAGRAM

BA

S21

Electrical Characteristics TA = 25°C unless otherwise noted

General Purpose High Voltage Diode(continued)

Symbol Parameter Test Conditions Min Max UnitsBV Breakdown Voltage IR = 100 µA 250 V

IR Reverse Voltage Leakage Current VR = 200 VVR = 200 V, TA = 150 °C

100100

nAµA

VF Forward Voltage IF = 100 mAIF = 200 mA

1.01.25

VV

CO Diode Capacitance VR = 0, f = 1.0 MHz 5.0 pF

TRR Reverse Recovery Time IF = IR = 30 mA, IRR = 3.0 mA,RL = 100 Ω

50 nS

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

Formative orIn Design

First Production

Full Production

Not In Production

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