bas21pg - nexperia

BAS21PGDual isolated high-voltage switching diode9 June 2015 Product data sheet

1. General descriptionDual high-voltage switching diode encapsulated in a very small SOT353 (SC-88A)Surface-Mounted Device (SMD) plastic package.

2. Features and benefits• High switching speed: trr ≤ 50 ns• Low leakage current• Reverse voltage VR ≤ 250 V• Low capacitance: Cd ≤ 2 pF• Very small SMD plastic package• AEC-Q101 qualified

3. Applications• High-speed switching at high voltage• High-voltage general-purpose switching• Voltage clamping• Reverse polarity protection

4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

Per diode

IF forward current Tj = 25 °C; single diode loaded - - 225 mA

VR reverse voltage Tj = 25 °C - - 250 V

Per diode

IR reverse current VR = 200 V; Tj = 25 °C - 25 100 nA

trr reverse recovery time IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA;RL = 100 Ω; Tj = 25 °C

- - 50 ns

© Nexperia B.V. 2017. All rights reserved

Nexperia BAS21PGDual isolated high-voltage switching diode

BAS21PG All information provided in this document is subject to legal disclaimers.

Product data sheet 9 June 2015 2 / 13

5. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

1 A1 anode diode 1

2 n.c. not connected

3 A2 anode diode 2

4 K2 cathode diode 2

5 K1 cathode diode 1

1 32

45

TSSOP5 (SOT353) 1 2 3

5 4

aaa-018440

6. Ordering informationTable 3. Ordering information

PackageType number

Name Description Version

BAS21PG TSSOP5 plastic surface-mounted package; 5 leads SOT353

7. MarkingTable 4. Marking codesType number Marking code

BAS21PG PG





8. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

Per diode

VR reverse voltage Tj = 25 °C - 250 V

Tj = 25 °C; single diode loaded - 225 mAIF forward current

Tj = 25 °C; double diode loaded - 125 mA

IFRM repetitive peak forward current tp ≤ 1 ms; δ = 25 %; Tj = 25 °C - 625 mA

tp = 1 µs; Tj(init) = 25 °C; square wave - 9 A

tp = 100 µs; Tj(init) = 25 °C; square wave - 3 A

IFSM non-repetitive peak forwardcurrent

tp = 10 ms; Tj(init) = 25 °C; square wave - 1.7 A

Per device; one diode loaded

[1] - 255 mWPtot total power dissipation Tamb ≤ 25 °C

[2] - 290 mW

Tj junction temperature - 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standardfootprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².





9. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

[1] - - 495 K/WRth(j-a) thermal resistancefrom junction toambient

[2] - - 430 K/W

Rth(j-sp) thermal resistancefrom junction to solderpoint

[3] - - 95 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².[3] Soldering point of cathode tab.

aaa-018393

10-5 1010-210-4 10210-1tp (s)

10-3 1031

102

10

103

Zth(j-a)(K/W)

1

duty cycle =

10.75

0.50.33

0.250.2

0.1

0.05

0.020.01

0

FR4 PCB, standard footprint

Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values





aaa-018394

10-5 1010-210-4 10210-1tp (s)

10-3 1031

102

10

103

Zth(j-a)(K/W)

1

duty cycle =

10.75

0.50.33

0.250.2

0.10.05

0.02 0.01

0

FR4 PCB, mounting pad for cathode 1 cm²

Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

10. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

Per diode

V(BR)R reverse breakdownvoltage

IR = 100 µA; Tj = 25 °C 250 - - V

IF = 100 mA; Tj = 25 °C - - 1 VVF forward voltage

IF = 200 mA; Tj = 25 °C - - 1.25 V

VR = 200 V; Tj = 25 °C - 25 100 nAIR reverse current

VR = 200 V; Tj = 150 °C - 40 - µA

Cd diode capacitance VR = 0 V; f = 1 MHz; Tj = 25 °C - 0.8 2 pF

trr reverse recovery time IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA;RL = 100 Ω; Tj = 25 °C

- - 50 ns





aaa-018395

10-3

10-2

10-1

1

IF(A)

10-4

VF (V)0.0 1.61.20.4 0.8

(1)(2)

(3) (4) (5)

(1) Tj = 150 °C(2) Tj = 125 °C(3) Tj = 85 °C(4) Tj = 25 °C(5) Tj = −40 °C

Fig. 3. Forward current as a function of forwardvoltage; typical values

aaa-01839610-4

10-5

10-6

10-7

10-8

10-9

10-10

10-11

IR(A)

10-12

VR (V)0 250200100 15050

(1)

(2)

(3)

(4)

(5)

(1) Tj = 150 °C(2) Tj = 125 °C(3) Tj = 85 °C(4) Tj = 25 °C(5) Tj = −40 °C

Fig. 4. Reverse current as a function of reversevoltage; typical values

mbg703

10

1

102

IFSM(A)

10- 1

tp (µs)1 10410310 102

Based on square wave currents.Tj(init) = 25 °C

Fig. 5. Non-repetitive peak forward current as afunction of pulse duration; maximum values

VR (R)0 862 4

aaa-018397

0.4

0.6

0.2

0.8

1.0Cd

(pF)

0.0

f = 1MHz; Tamb = 25 °C

Fig. 6. Diode capacitance as a function of reversevoltage; typical values





Tamb (°C)0 50 100 150 1751257525

aaa-018398

1

2

3

IF(AV)(A)

0

(1)

(2)

(3)

(4)

FR4 PCB, standard footprint; one diode loaded(1) δ = 1(2) δ = 0.5(3) δ = 0.2(4) δ = 0.1

Fig. 7. Average forward current as a function of ambient temperature; typical values

11. Test information

trr

(1)

+ IFt

output signal

tr tpt

10 %

90 %VR

input signal

V = VR + IF × RS

RS = 50 Ω IF

D.U.T.

Ri = 50 Ω

SAMPLINGOSCILLOSCOPE

mga881

(1) IR = 1 mA

Fig. 8. Reverse recovery time: test circuit and waveforms

tptcy

P

t006aac658

duty cycle δ =

tp

tcy

Fig. 9. Duty cycle definition

The current ratings for the typical waveforms are calculated according to the equations:IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ withIRMS defined as RMS current.





11.1 Quality informationThis product has been qualified in accordance with the Automotive Electronics Council(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and issuitable for use in automotive applications.

12. Package outline

04-11-16Dimensions in mm

0.250.10

0.30.2

1.30.65

2.22.0

1.351.15

2.21.8

1.10.8

0.450.15

1 32

45

Fig. 10. Package outline TSSOP5 (SOT353)

13. Soldering

solder lands

solder resist

occupied area

solder paste

sot353_fr

0.4

0.6

0.5(4×)

0.5(4×)

0.6(4×)

0.6(4×)

2.35

2.65

0.90.9

0.75

0.75

Dimensions in mm

Fig. 11. Reflow soldering footprint for TSSOP5 (SOT353)





sot353_fw

1.3 1.3

4.5

1

1

4.9

1.5

1.5

2.5

2.25

0.85

0.85

1.225 1.225

solder lands

solder resist

occupied area

preferred transportdirection during soldering

Dimensions in mm

Fig. 12. Wave soldering footprint for TSSOP5 (SOT353)





14. Revision historyTable 8. Revision historyData sheet ID Release date Data sheet status Change notice Supersedes

BAS21PG v.1 20150609 Product data sheet - -





15. Legal information

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Productstatus [3]

Definition

Objective[short] datasheet

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Qualification This document contains data from thepreliminary specification.

Product[short] datasheet

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[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have

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Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.

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Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.

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16. Contents1 General description ............................................... 12 Features and benefits ............................................13 Applications ........................................................... 14 Quick reference data ............................................. 15 Pinning information ...............................................26 Ordering information .............................................27 Marking ................................................................... 28 Limiting values .......................................................39 Thermal characteristics .........................................410 Characteristics .......................................................511 Test information ..................................................... 711.1 Quality information ............................................... 812 Package outline ..................................................... 813 Soldering ................................................................ 814 Revision history ...................................................1015 Legal information .................................................1115.1 Data sheet status ............................................... 1115.2 Definitions ...........................................................1115.3 Disclaimers .........................................................1115.4 Trademarks ........................................................ 12

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 09 June 2015