ben blalock - 1 analog layout – fall 2002 electrical & computer engineering figures ©baker,...
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Ben Blalock - 1Analog Layout – Fall 2002
Electrical & Electrical & ComputerComputer
EngineeringEngineeringFigures ©Baker, Li, & Boyce 1998
Analog Layout
Ben Blalock - 2Analog Layout – Fall 2002
Electrical & Electrical & ComputerComputer
EngineeringEngineeringFigures ©Baker, Li, & Boyce 1998
Analog Layout
• MOSFET Layout
layout example (with schematic):
Ben Blalock - 3Analog Layout – Fall 2002
Electrical & Electrical & ComputerComputer
EngineeringEngineeringFigures ©Baker, Li, & Boyce 1998
Analog Layout
• CMOS Passive Elements
Poly1-poly2 capacitor structure
Ben Blalock - 4Analog Layout – Fall 2002
Electrical & Electrical & ComputerComputer
EngineeringEngineeringFigures ©Baker, Li, & Boyce 1998
Analog Layout
• CMOS Passive Elements
Parasitics associated with the poly1-poly2 capacitor structure
Ben Blalock - 5Analog Layout – Fall 2002
Electrical & Electrical & ComputerComputer
EngineeringEngineeringFigures ©Baker, Li, & Boyce 1998
Analog Layout
• CMOS Passive Elements
Careful layout can reduce parasitic resistance associated with cap structure
Ben Blalock - 6Analog Layout – Fall 2002
Electrical & Electrical & ComputerComputer
EngineeringEngineeringFigures ©Baker, Li, & Boyce 1998
Analog Layout
• CMOS Passive Elements
Additional options for implementing capacitors in CMOS technology include:
metal1-metal2 capacitors
MOS caps (drain shorted to source MOSFET operating in SI)
n+ or p+ diffusions to well or substrate
Well-to-substrate
Ben Blalock - 7Analog Layout – Fall 2002
Electrical & Electrical & ComputerComputer
EngineeringEngineeringFigures ©Baker, Li, & Boyce 1998
Analog Layout
• CMOS Passive Elements
Good analog design utilizes ratioing of components:
Ben Blalock - 8Analog Layout – Fall 2002
Electrical & Electrical & ComputerComputer
EngineeringEngineeringFigures ©Baker, Li, & Boyce 1998
Analog Layout
• CMOS Passive Elements
Guard ring components to isolate them from substrate noise:
Ben Blalock - 9Analog Layout – Fall 2002
Electrical & Electrical & ComputerComputer
EngineeringEngineeringFigures ©Baker, Li, & Boyce 1998
Analog Layout
• CMOS Passive Elements
Good example of layout of matched elements (R1 & R2):
consistent orientation (horizontal in this case)
consistent parasitics
don’t forget to guard ring!
Ben Blalock - 10Analog Layout – Fall 2002
Electrical & Electrical & ComputerComputer
EngineeringEngineeringFigures ©Baker, Li, & Boyce 1998
Analog Layout
• CMOS Passive Elements
Common-centroid layout improves element matching (at the expense of uneven parasitics between the elements):
in Fig. 7.7(a), RA = ‘16’ and RB = ‘20’
in Fig. 7.7(b), RA = ‘18’ and RB = ‘18’
Ben Blalock - 11Analog Layout – Fall 2002
Electrical & Electrical & ComputerComputer
EngineeringEngineeringFigures ©Baker, Li, & Boyce 1998
Analog Layout
• Common-centroid structure for four elements (resistors, MOSFETs, or capacitors):
Ben Blalock - 12Analog Layout – Fall 2002
Electrical & Electrical & ComputerComputer
EngineeringEngineeringFigures ©Baker, Li, & Boyce 1998
Analog Layout
• Also use dummy elements to improve matching:
Ben Blalock - 13Analog Layout – Fall 2002
Electrical & Electrical & ComputerComputer
EngineeringEngineeringFigures ©Baker, Li, & Boyce 1998
Analog Layout
• Beware of poly under etching in layout of capacitor unit cells!
Circular poly structures guarantee consistent under etching:
Ben Blalock - 14Analog Layout – Fall 2002
Electrical & Electrical & ComputerComputer
EngineeringEngineeringFigures ©Baker, Li, & Boyce 1998
Analog Layout
Good layout practices for analog circuits:
• Use gate lengths several times larger than the technology’s minimum gate length if all possible. This helps reduces effects while improving matching.
• Use multiple source/drain contacts along the width of the transistor to reduce parasitic resistance and provides evenly distributed current through the device.
Ben Blalock - 15Analog Layout – Fall 2002
Electrical & Electrical & ComputerComputer
EngineeringEngineeringFigures ©Baker, Li, & Boyce 1998
Analog Layout
Good layout practices for analog circuits (continued):
• Interdigitize large aspect ratio devices to reduce source/drain depletion capacitance. Using an even number (n) of gate fingers can reduce Cdb, Csb by
one-half or (n + 2)/2n depending on source/drain designation. Typically it is preferred to reduce drain capacitance more so than source capacitance. Also use dummy poly strips to minimize mismatch induced by etch undercutting during fab.
Ben Blalock - 16Analog Layout – Fall 2002
Electrical & Electrical & ComputerComputer
EngineeringEngineeringFigures ©Baker, Li, & Boyce 1998
Analog Layout
Good layout practices for analog circuits (continued):
• Matched devices should have identical orientation. An example of what not to do is shown below.
Ben Blalock - 17Analog Layout – Fall 2002
Electrical & Electrical & ComputerComputer
EngineeringEngineeringFigures ©Baker, Li, & Boyce 1998
Good layout practices for analog circuits (continued):
• Interdigitization can be used in a multiple transistor circuit layout to distribute process gradients across the circuit. This improves matching.
• Use common-centroid structures.
Analog Layout
Ben Blalock - 18Analog Layout – Fall 2002
Electrical & Electrical & ComputerComputer
EngineeringEngineeringFigures ©Baker, Li, & Boyce 1998
Analog Layout
Matching Errors in MOSFET Current Mirrors:
• Good layout design is essential for circuits needing matched devices.
• Layout techniques are effectively used to minimize first-order mismatch errors due to variations in these process parameters: gate-oxide thickness, lateral diffusion, oxide encroachment, and oxide charge density.
Ben Blalock - 19Analog Layout – Fall 2002
Electrical & Electrical & ComputerComputer
EngineeringEngineeringFigures ©Baker, Li, & Boyce 1998
Analog Layout
Matching Errors in MOSFET Current Mirrors (continued):
• Considering only the effects of threshold voltage mismatch within the simple current mirror, its current ratio is described by
for SI saturation operation if a symmetric distribution in threshold voltage across the circuit is assumed (i.e., VTHN1 = VTHN 0.5VTHN and VTHN2 = VTHN +
0.5VTHN). Note the dependence on VGS. A reduction in VGS increases the
input/output error in current mirrors induced by threshold voltage mismatch.
2
2
2
2
1
21
21
5.0
5.0
THNGS
THN
THNGS
THN
THNTHNGS
THNTHNGS
D
o
VVV
VVV
VVV
VVV
I
I
THNGS
THN
D
o
VV
V
I
I
2
11
Ben Blalock - 20Analog Layout – Fall 2002
Electrical & Electrical & ComputerComputer
EngineeringEngineeringFigures ©Baker, Li, & Boyce 1998
Analog Layout
Matching Errors in MOSFET Current Mirrors (continued):
• Considering only transconductance parameter mismatch,
where the value of KPn is the average transconductance parameter between
the two transistors within the simple current mirror.
• Considering only VDS and effects [SI sat.] ,
These, too, can be a significant source of error (e.g., 11%! if VDS1 = 2V,
VDS2 = 4V, (c + m)1 = 0.04V-1, and (c + m)1 = 0.05V-1).
n
n
D
o
KP
KP
I
I 1
1
11
22
1 1
1
DSmc
DSmc
D
o
V
V
I
I