Bolometer Fabrication

P- Si Substrate

Ti ArmAl MirrorSiN Insulation Layer

PI 2737 Sacrificial Layer

SiGeAu Absorber Au Contact

Ashing of PI2737 in Oxygen Plasma

Completed Bolometer : SEM Picture

Bolometer: Resistivity & Temperature Coefficient of Resistance (TCR) Variation With

Temperature

40

50

60

70

80

90

-1.5

-1.4

-1.3

-1.2

-1.1

-1

260 270 280 290 300 310 320 330

Res

ista

nce

(K

)T

CR

(%/K

)

Temperature (K)

Bolometer: Current voltage (I-V) Characteristics

-3

-2

-1

0

1

2

3

-3

-2

-1

0

1

2

3

-200 -150 -100 -50 0 50 100 150 200

In Air

In VacuumVol

tage

(V

)

Current (A)

-0.4

-0.3-0.2-0.1

00.1

0.20.30.4

-20 -15 -10 -5 0 5 10 15 20

Vol

tage

(V

)

Current ( A)

Bolometer: Noise Analysis at Different Bias Currents

10-11

10-10

10-9

10-8

10-7

10-6

1 10 100 1000 104 105

0.4 A1 A2 AN

oise

Vol

tage

PSD

(V

2 /Hz)

Frequency (Hz)

Bolometer: Noise Analysis of two bolometers and the corresponding Normalized Hoogie

Coefficient for 1/f-noise (αH/N) determined at 10 Hz frequency

Device

Noise Voltage PSD @ 250 Hz For 1 μA bias current

[V2/Hz]αH/N

10C52 2.60×10-9 5.19×10-5

10C51 1.17×10-7 6.82×10-5

fN

RIS bHv

22

Where is noise voltage power spectral desity in V2/Hz

Ib is the bias current

R is the resistance of the device

N is the number of fluctuators

vS

This material is based in part by work supported by the National Science Foundation ECS-0322900