boon 2016 dist min - ntu · globalfoundries singapore pte. ltd-ntu joint r&d: direct...
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RFIC for Mobile Wireless Communication
RFIC for Vehicular Communication and Radar
Building IP for Current and Future RF IC
Assoc.ProfessorBoon ChirnChyeProgramme Director,RF&MM‐wave,VIRTUS,NTUAssoc.Editor,IEEETransactionofVLSI;EEENTUTeachingExcellentAward2012;CommendationAwardforTeachingExcellence2014.IEEEElectronDevicesLettersGoldenReviewer.
Web: http://www.ntu.edu.sg/home/eccboon
Interesting facts & figures
• Total student population – around 34,000
• More than 2/3 undergraduates, with about 1/3 graduate students
• Students from more than 70 countries study, research and play at NTU
• VIRTUS: NTU’s IC Design Centre of Excellence, jointly funded by Singapore Economic Development Board (EDB).
• Official Opening on 20th Oct 2010.
• NTU Ranked 13 in QS University World Rankings 2015
• 7th in Electrical and Electronic Engineering for 2015 QS World Ranking (36 in 2011).
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ResearchLeadershipinRF/MMWICFunding Source/ Project Title Quantum ($)
Cash Only (Total including in-kind)
Role Grant Period
Delta-NTU Corp. Lab: A Wireless Heterogeneous Network Transceiver Chipset for Content-Driven Transmission of Learning Media (SLE-RP3) Research Area (SLE)
PI 1st July 2016 to 30th
June 2021
MOE Tier 1: Monolithic Terahertz Passive Components in Advanced CMOS Technology: From Fundamental Understandings to Integrated Circuit Applications
PI 1st November 2016 to 31st October 2018
GlobalFoundries Singapore Pte. Ltd-NTU Joint R&D: Direct Integration of GaN Power Devices on CMOS Circuits for Demonstrate Power Management Solutions,
PI 1st June 2016 to 31st
December 2018
SMART-POC: An Integrated Platform Approach Towards Non-Invasive Continuous Blood Glucose Monitoring Addressing Clinical Need for Early Diagnosis and Improved Compliance
PI 1st July 2016 to 30th
July 2017
Huawei Tech. Co. Ltd-NTU Joint R&D: 10GiFi research & development of ultra-wideband RF transceiver
PI 15th July 2014 to 14th July 2017
Tier 2: High Thermal Resolution Ultra-Low Power Integrated Imager: Fund. Issues in CMOS
PI July 2013 to June 2016
Project 17: Electronic Circuit Design, Communications under SMART-IRG5: Low Energy Electronic Systems (MIT-NTU)
PI 1st April 2014 to 30th
March 2016
ResearchLeadershipinRF/MMWIC
& Other Grants in RF IC. Total Grants:$9,887,723.22 In Cash
Project2:ElectronicCircuitDesign,CommunicationsunderSMART‐IRG5:LowEnergyElectronicSystems(MIT‐NTU)
PI 1st April2013to30th March2014
Project10:ElectronicCircuitDesign,CommunicationsunderSMART‐IRG5:LowEnergyElectronicSystems(MIT‐NTU)
PI 1stApril2012to30thMarch2013
SMA(MIT‐NTU)CMOSFront‐end PI 5thAugust2013to4thAugust2017
SMA(MIT‐NTU)HighSpeedCMOS PI 13thJanuary2014to12thAugust2018
ARC3/09:BatterylessFlexibleTransceiverforBiomedicalApplications PI May2009toJuly2012
RG73/07:Ultra‐lowPowerFullyIntegratedCMOS24GHzReceiver PI March2008toOctober2011.
AdvancedRFICPteLtd Co‐PI March2007toFebruary2012
NRF:AnUltraLow‐PowerRFTransceiverChiptowardsaNewParadigmofLifeQuality Co‐PI February2009toFebruary2010
UniversityofElectronicScienceandTechnology(UEST)ofChina‐NTUJointR&D,jointlyfundedbyUESTandNTU:System‐on‐chip:RealizationofSoftwareRadio
Co‐PI 3December2008to2December2009
AgencyforScience,TechnologyandResearch(A*STAR):AnUltraLow‐PowerRFICChipForWirelessandCommunication
Co‐PI March2006toFebruary2009
NTU-MIT LEES : GaN + CMOS
• D2D (Device‐to‐Device) communications using DSRC– to off‐load the base stations in cellular networks– to improve response time
6
Motivation
* DSRC (Dedicated Short-Range Communication
*
802.11p system prototyping
12V
DC Booster
Neg. BiasGen.
>20V
(‐)
(‐) ANTRFFront‐End
ANT
TransmitterReceiver
1.8V / 3.3V
DAC / ADC
11p Digital Baseband & MAC
FPGA board Discrete component CMOS circuit GaN circuit
5.9 GHz
OSC.
Power Electronic: High Efficiency Wideband GaN + CMOS PA
5 to 6 GHz Power Amplifier in MMIC
Psat >36dBm, Efficiency >70%
Suitable for IEEE802.11ax WiFi that will be ratify in 2019.
Using mature CREE GaNcommercial technology.
2.6-6.4GHz 256QAM 80MHz High Efficiency GaN PA• Highly Compact & Unconditionally stable
PA, with measured efficiency (eff.) • 2 times higher and 3.5 times wider
bandwidth vs. similar commercial PAs. • Tested and meet the 80MHz 256QAM
modulation WLAN 802.11ac.
Mao Mengda, Pilsoon ChoiSupervisor: A/P. Boon Chirn Chye
High Efficiency Wideband GaN + CMOS PA
Latest GaN + CMOS PA To maintain yield CMOS is used to improve stability. Excellent stability. Good Gmax. Better frequency accuracy through CMOS control. With LEES> lower loss and higher power , save cost with less SMD.
gateV
inZ outZ
Novel GaN Oscillator as Signal Source
Best Reported Fully Integrated GaN OSC Phase Noise 7.9GHz -135dBc/Hz@ 1MHz (MWCL)
It successfully demonstrated that the integrated FFO fabricated in GaN‐on‐SiC HEMT technology can achieve high power as previously reported, and feature ultra‐low phase noise, which makes GaN‐on‐SiC HEMTs attractive to both high power and low noise microwave source applications.
2nd OSC Measured Lowest Voltage GaN OSC : 3.3VBest Phase Noise (FOM) reported.-139dBc/Hz@1MHz, 36mA.
Latest GaN + CMOS VCONo varactor in GaN. Precise frequency control. Wide tuning range. With LEES> wider range and better PN.
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First Fully Integrated TRX for IEEE802.11p in GaN 0.25nm CREE
GaN PA @ 5.9GHz (1.28 mm2)
10%10%20%20%30%30%
20dBm(100m
W)
30dBm
(1W)
Drain efficiency
Pout
GaN Front-end @ 5.9GHz(2 mm2)
evolving
Advantage on system level power saving: 22% efficiency over one decade power change EVM better than 25dB with OFDM 64QAM. With LEES> CMOS control output power, lower
loss and higher power , save cost with less SMD.
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LEES: High efficiency techniqueConventional Tx/Rx Switching Scheme
Proposed Tx/Rx Switching Scheme
10 , ⁄
, ,
,
35.4% @ 708mW(due to 1.5 dB SPDT
loss)
50% @ 1W
GaN RF front-end @ 5.9GHz• Fully integrated & energy
efficient RF– PA + LNA + ANT
SW– 2mm x 1.2mm
Rx mode: 22dBm OIP3Tx mode: 50% power efficiency @ 34dBm Psat
Chip-on-Board(No external matching)
Android application (on a smart phone) => USB-Ethernet interface => Baseband (in FPGA) => DAC => CMOS RF Tx =>
GaN power amplifier
Prototyping – System Integration
Android application communicating via prototype
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Sonar app.
Turn Key : Android application communicating via prototype for IEEE802.11p
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FPGA Sub-system
802.11p OFDM output @ DAC (Freq. domain vs. Time domain)
1) 802.11p Airblue baseband (originally designed for 802.11a)2) Android phone-to-PHY interface for packet Tx/Rx3) RF interface for Tx power control
w/o filter w/ filter
9
System Evaluation: RoadRunner
Deployment area in Cambridge
Average power consumption of RoadRunner V2V token exchanges(w/ & w/o adaptive power control)
– In-vehicle Android app forroad congestion control
– Vehicles need to get a tokento drive on specific road
– Tokens shared between phones
MMW/THz Research for Car Radar, Imaging and Ethernet (OE)
ThebestCMOSdual‐bandfrequencysynthesizerforautomotiveradarapplication
Best phase noise and lowest power consumption for among all automotive radar’s frequency synthesizer reported.
WorldFirst100GHzFractional‐NPLLinFullyIntegratedCMOS(HiSpeedBackhaul?)
Xiang Yi, Zhipeng Liang, Guangyin Feng, Fanyi MengSupervisor: Assoc. Prof. Boon Chirn Chye
Ref. Tech. (nm)
Operating Range (GHz)
P.N.@1MHz /10MHz (dBc/Hz)
FOM(1)@1MHz /10MHz (dBc/Hz)
FOMT(2)@1MHz /10MHz (dBc/Hz)
Output Phase
Power (mW)
[2] 65 CMOS
98~103.3 (5.2%)
-75(3) /-112.1
-164.49/ -181.59
-158.81 /-175.91 Differential 12~21
91.7~95.5 (4.1%)
-80(3) /-118.8
-162.79/ -181.59
-155.04 /-173.84
Eight Phases 48~85
[3] 65 CMOS
100~110 (9.5%)
-92.83 /-100(3)
-175.9 /-163.1
-175.5 /-162.7 Quadrature 54
This work
65 CMOS
93.24~105.02 (11.9%)
-93.80 /-112.67
-178.6 /-177.5
-180.2 /-179.0 Quadrature 30
Ref. Tech. (nm)
fref (MHz)
Operating Range (GHz)
P.N.@1MHz /10MHz (dBc/Hz)
Reference Spur (dBc)
Resolution (MHz)
Output Phase Architecture Power
(mW)
[4] 65 CMOS
371.5 ~377.0
95.1~96.5 (1.5%)
-76 /-93(3) -51.8 fREF Differential Integer-N 43.7
[5] 65 CMOS
185.7 ~211.9
96.8~108.5 (11.4%)
-88 /-105(3) -40 fREF Differential Integer-N +
Push-Push 14.1
[6] 65 CMOS
402.6 ~408.5
103.058~104.58 (1.5%)
-80.41 /-101.08 -63.8 fREF Differential Integer-N 63
This work
65 CMOS 100 93.4~104.8
(11.5%)
-86.07 -86.07(4) /-108.75 -103.53(4)
-44.69 0.000036fREF(4) Quadrature Frac-N +
Sub-Sampling
57
(1) FOM = P.N. – 20log(f0/Δf) + 10log(Power/1mW). (2) FOMT = FOM – 20log(% of Operating Range/10%). (3) Estimated from figures. (4) PLL is in fractional-N mode.
Ref. Tech. (nm)
Operating Range (GHz)
P.N.@1MHz /10MHz (dBc/Hz)
FOM(1)@1MHz /10MHz (dBc/Hz)
FOMT(2)@1MHz /10MHz (dBc/Hz)
Output Phase
Power (mW)
[2] 65 CMOS
98~103.3 (5.2%)
-75(3) /-112.1
-164.49/ -181.59
-158.81 /-175.91 Differential 12~21
91.7~95.5 (4.1%)
-80(3) /-118.8
-162.79/ -181.59
-155.04 /-173.84
Eight Phases 48~85
[3] 65 CMOS
100~110 (9.5%)
-92.83 /-100(3)
-175.9 /-163.1
-175.5 /-162.7 Quadrature 54
This work
65 CMOS
93.24~105.02 (11.9%)
-93.80 /-112.67
-178.6 /-177.5
-180.2 /-179.0 Quadrature 30
Ref. Tech. (nm)
fref (MHz)
Operating Range (GHz)
P.N.@1MHz /10MHz (dBc/Hz)
Reference Spur (dBc)
Resolution (MHz)
Output Phase Architecture Power
(mW)
[4] 65 CMOS
371.5 ~377.0
95.1~96.5 (1.5%)
-76 /-93(3) -51.8 fREF Differential Integer-N 43.7
[5] 65 CMOS
185.7 ~211.9
96.8~108.5 (11.4%)
-88 /-105(3) -40 fREF Differential Integer-N +
Push-Push 14.1
[6] 65 CMOS
402.6 ~408.5
103.058~104.58 (1.5%)
-80.41 /-101.08 -63.8 fREF Differential Integer-N 63
This work
65 CMOS 100 93.4~104.8
(11.5%)
-86.07 -86.07(4) /-108.75 -103.53(4)
-44.69 0.000036fREF(4) Quadrature Frac-N +
Sub-Sampling
57
(1) FOM = P.N. – 20log(f0/Δf) + 10log(Power/1mW). (2) FOMT = FOM – 20log(% of Operating Range/10%). (3) Estimated from figures. (4) PLL is in fractional-N mode.
Ultra-compact PLLOvercoming frequency resolution, fast settling, signal purity trade-off.
Widest Bandwidth Highest BWER 100GHz LNA
Ultra-compact LNA achieves the widest 3-dB bandwidth and the best FoM among wideband mmW LNAs in CMOS.
• Suitable for wireless USB4.0: >10Gbps Expected Release 2020.
• Internal interface transfer rates: PCIe/mPCIe>32Gbps (x16)
Widest Bandwidth Highest BWER 100GHz LNAGuangyin Feng, Fanyi Meng, Xiang YiSupervisor: Assoc. Prof. Boon Chirn Chye
Overcoming Gain Flatness, Wideband Gain Trade-off for MMW Application.
MMW High Gain Power Amplifier IEEE 802.15.3c Power Amplifier
This work demonstrates an ILPA with largest injection locking bandwidth. The fabricated PA has achieved a injection locking range from 50 GHz to 59 GHz. Maximum output power of 11.39 dBm has been obtained while the highest PAE is 16.1 %. Moreover, the chip size is 260 μm x 400 μm excluding pads.
1.3mW/Gb/s World Best Efficiency 36GbpsEthernet Wireline Communication (Car Ethernet?)
Yong Chen, Lingshan Kong, Haohong Yu, Peng WangSupervisor: Assoc. Prof. Boon Chirn Chye
Turn Key: World Fastest Consumer WiFi IEEE 802.11ax Integrated Circuit (IC) R&D
IEEE 802.11ax Testing Setup
World First and Fastest Consumer WLAN IEEE 802.11ax
IEEE 802.11ax DemonstrationSubjected to Most Rigorous Industrial Multiple Carriers
& Jammers Test
World First and Fastest Consumer WiFi IEEE 802.11ax
Virtus‐EEE‐NTU 29
Xiang Yi, Kaituo Yang, Zhipeng Liang, Bei Liu, Khanna Devrishi, Chenyang Li, GuangyinFeng, Dror Regev, Shimi Shilo, Fanyi Meng, Hang Liu, Junyi Sun, Gengen Hu
Supervisor: Assoc. Prof. Boon Chirn Chye
Subjected to Most Rigorous Industrial Multiple Carriers &
Jammers Test
Energy Harvesting Batteryless Flexible Transceiver for Biomedical Applications
Wi-Fi Energy Harvester
Measured Board with Fully Integrated Energy Aware ZigBeeChip
Sub-threshold Biasing for RF & mmW
How we do it. 31
Fund. analysis and RF circuit design:High GTUmax can be obtained with weak-inv. Low power from weak-inv. (high transconductance vs. current)No performance reduction.
Conventional Concept – Trade-off10 x energy reduction / op. freq.10x performance reduction
0102030405060708090
100
Energy/Frequency Performance
How others do it.
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Methodologies:(>74 International Publications, >55 IC Chips):
Sub-threshold RF Design
Energy Aware RF System Level Design
Ultra-Low Power Series Quadrature VCO
Novel TSPC Frequency Synthesizer
Novel Large Signal MGTR Power Amplifier
Energy Harvesting & Storing
Specific Aim:Current transceivers power consumption is too high. Requires very large battery or energy harvesting & storing devices. Our Aim to Achieve the Ground Breaking Power consumption of RF Transceiver <10 mW
RF IC Ultra Low Power Methodologies
Compact Integrated Circuit Non-invasive Blood Glucose Detection (GF 65nm).
24hr blood glucose detection.
Android Apps instant report.Cloud connection for report and data transfer to hospital.
Currently in CMOS.
With GaN +CMOS for High Efficiency Fully Integrated More Accurate. With LEES> Wearable technology! Size Matters! One die and Less SMD.
TurnKey:Non‐invasiveBloodGlucoseDetection
Thankyouforyourtimeandefforttounderstandourwork.Web: http://www.ntu.edu.sg/home/eccboon