bosim basic optical switching integration model
TRANSCRIPT
1
BOSIM
Basic Optical Switching Integration Model
Version 3.0
OPTICS Lab
Big Data System Lab
Hong Kong University of Science and Technology
https://eexu.home.ece.ust.hk/
Sep 2020
2
CONTENTS
1 BOSIM 3
2 Potential Applications 42-A Data Transmission . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42-B Data Processing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42-C Data Sensing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52-D Optical Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Functionality 6
4 Installation Guideline 74-A Requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74-B Quick Compilation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 Running a Simulation 85-A Quick Notebook Demo . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85-B Transient and Steady State Simulations . . . . . . . . . . . . . . . . . . . . . . . . 95-C Thermal Optical Effect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105-D Process Variation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115-E Design Space Exploration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 File Hierarchy 136-A MakeFile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146-B Configuration File . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6-B1 BOSIM configuration file . . . . . . . . . . . . . . . . . . . . . . . . . . 146-B2 MR configuration file . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146-B3 PN configuration file . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6-C Terminology-Variable Dictionary . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
7 Agreement and License 177-A Agreement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177-B Copyright and License . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
8 Revision History 17
3
1. BOSIMSilicon photonic networks are revolutionizing computing systems by improving the energy efficiency,bandwidth, and latency of data movements. Optical devices, such as microresonators and Mach- ZehnderInterferometers (MZIs), are the basic building blocks of silicon photonic networks. Exploring silicon pho-tonic networks and optical switches is not well supported by traditional academic tools. To overcome theseissues, our group proposes a comprehensive simulator called BOSIM (Basic Optical Switch IntegrationModel).
BOSIM is a SPICE-compatible electro-optical co-simulation model. It can systematically study opticalmodulators using PN, PIN, and metal-insulator-silicon (MIS) capacitor device technologies. BOSIMholistically models both transient and steady state properties, such as switching speed, power, transmissionspectrum, area and carrier distribution. BOSIM is validated based on the measured data in the referenceto Intel [1–4], Bell labs [5–8], IBM [9, 10], Cornell [11–13], PETRA [14], ETRI [15, 16], CAS [17–22]and HKUST [23].
N
PInsulator
NP
NP
Electrical Device Library
Latency Power
Transmission Spectrum
Area
Carrier Distribution
Optical Matrix Method
Effective Index
Method
Plasma Dispersion
Effect
Transient/Steady State Analysis
Electrical Configuration
Device Parameters
MZIMR
Optical Device Library
Modulation Mechanism
I
Material Feature Model
OpticalDevice Model
ElectricalDevice Model
Photonic-Electronic
Circuit Model
Coupled Mode Theory SPICE ModelNP
Self-Imaging Principle
Optical Elements Structure
Eye Diagram
SNRLoss
Carrier Injection
Carrier Depletion
Carrier Accumulation
Chromatic Dispersion
Effect
3dBBandwidth
Crosstalk Coefficient
Fig. 1: Block diagram of BOSIM
4
2. POTENTIAL APPLICATIONS
Photons are a natural transmission particle with zero rest mass and highest vacuum speed, givingphoton-based systems many tremendous advantages in data movement, processing and sensing.
A. Data TransmissionAs can be viewed in Fig. 2, in data transmission, photons have dominated board-to-board and chip-to-
chip communications in the data center. The ultra-high-speed transmissions required by 5G continuallyharness the development of photonic components in telecommunications. The applications of intra-chipoptical interconnects and high radix optical switches have also been boosted due to the maturity ofphotonics technologies.
Fig. 2: Silicon Photonic Network
B. Data ProcessingIn data processing, optical neural networks are one of the most promising directions [24], shown in
Fig. 3. Since photons have high parallelism, optical computing utilizes the inherent transmission bandwidthand exploits the potential bandwidth of computation.
Fig. 3: Optical Neural Network [24]
5
C. Data SensingIn data sensing, LiDAR is a key technology for autonomous cars, and photonic techniques can effectively
reduce the size and cost, as shown in Fig. 4. Biomedical sensors is another encouraging area for the useof photonics; where a ring-based photonic biosensor has been invented to weigh the bounded DNAs andproteins [25].
Fig. 4: LiDAR [26]
D. Optical DeviceOptical devices are the basic building blocks of silicon photonic systems and crucial to the system
performance. Comparisons among various advanced device technologies are difficult, and previous worksignore the system disparities introduced by optical devices. Difficulties arise two aspects: i) complexitiesof the big design space, quick verification and exploration; and ii) the absence of a precise and detailedintegration model. As can be viewed in Fig. 5, device-level research stays at the experimental stage andexplores optical modulators, such as MR and MZI, of high speed [3–5, 12, 14], high contrast [27], low lossand energy [10], low Vpp [6, 13], compact size [11, 16] and tunable wavelength [8]. These state-of-the-artoptical modulators provide guidelines for device optimization and experimental results for system-levelreference. In regard to the second aspect, most of prior arts focus on modeling one specific type ofoptical device, such as PN-based MZI or MIS-based MR. We are lack of an open-source holistic modelin the photonic areas, especially in academia. Therefore, we propose BOSIM for holistic modeling andsystematic analysis of optical devices.
0 10 20 30 40 50 600
5
10
15
20
Extin
ctio
n Ra
tio (d
B)
0 10 20 30 40 50 60
101
102
103
104
Ener
gy E
fficie
ncy
(pJ/b
it)
0 10 20 30 40 50 60Bit Rate (Gbps)
101
102
103
104
105
Area
(m
2 )
Intel,liu-2004Intel,liao-2005Intel,liao-2007Intel,liu-2007Korea,park-2009Korea,kim-2014Univ of Surrey,thomson-2011Univ of Surrey,thomson-2012Univ of Surrey,gardes-2011Univ. Paris-Sud,ziebell-2012Univ. Paris-Sud,marris-morini-2013
Spain,brimont-2012Bell,dong-2012PETRA,akiyama-2012CAS,xiao-2013CAS,ding-2013CAS,yang-2014CAS,xu-2014IBM,green-2007Cornell,xu-2005Cornell,xu-2007Cornell,manipatruni-2010
Bell,dong-2009Bell,dong-2010IBM,rosenberg-2011IBM,rosenberg-2012CAS,hu-2012CAS,xiao-2014HKUST,li-2007MZI-PNMZI-PINMR-PNMR-PIN
0 10 20 30 40 50 600
5
10
15
20
Extin
ctio
n Ra
tio (d
B)
0 10 20 30 40 50 60
101
102
103
104
Ener
gy E
fficie
ncy
(pJ/b
it)
0 10 20 30 40 50 60Bit Rate (Gbps)
101
102
103
104
105
Area
(m
2 )
Intel,liu-2004Intel,liao-2005Intel,liao-2007Intel,liu-2007Korea,park-2009Korea,kim-2014Univ of Surrey,thomson-2011Univ of Surrey,thomson-2012Univ of Surrey,gardes-2011Univ. Paris-Sud,ziebell-2012Univ. Paris-Sud,marris-morini-2013
Spain,brimont-2012Bell,dong-2012PETRA,akiyama-2012CAS,xiao-2013CAS,ding-2013CAS,yang-2014CAS,xu-2014IBM,green-2007Cornell,xu-2005Cornell,xu-2007Cornell,manipatruni-2010
Bell,dong-2009Bell,dong-2010IBM,rosenberg-2011IBM,rosenberg-2012CAS,hu-2012CAS,xiao-2014HKUST,li-2007MZI-PNMZI-PINMR-PNMR-PIN
Fig. 5: The surveys of the state-of-the-arts on extinction ratio, energy per bit and area cost among MZI[1–5, 9, 14–16, 19–22, 27–32] and MR [6–8, 10–13, 18, 23, 33–35] from 14 research groups.
6
3. FUNCTIONALITY
As shown in Table I, BOSIM contains most common objects. The electrical objects are a PN diode,PIN diode, and MIS capacitor, while the optical objects are a phase shifter, bus waveguide, directionalcoupler, and multimode interferometer. These objects can form almost all optical modulators, switches orfilters based on the free-carrier plasma dispersion effect. The BOSIM analyzer has three levels: material,device and circuit level. In the material level, BOSIM precisely depicts critical physical quantities, suchas refractive index and mobility. The device level adopts the classical model for electrical and opticalelements with plenty of setup variables, and the circuit level integrates all the components and analyzesthe optical switches with peripheral electrical and optical circuits. As for the outputs, BOSIM can evaluatelatency, power, loss, signal to noise ratio (SNR), transmission spectrum, eye diagram, area consumptionand carrier distribution. These aspects are validated by real devices.
BOSIM promises high accuracy, multiple functions and multiple levels. A system overview is shownin Fig. 12, where the BOSIM analyzer inputs design details, selects related libraries and outputs perfor-mance results. The design details include electrical configurations, optical element structures, and deviceparameters. The input of the electrical configuration involves the driven voltage and circuit parameters,while optical element structure includes the geometry size, film dispersion and material dispersion. Thewaveguide dispersion height, etching depth, cladding height and PN interface offset. is caused by frequencydependence of the propagation constant The device parameters include the doping concentration of of aspecific mode. It will be analyzed using the effective the electrical element, its SPICE parameters, andthe optical index method (EIM). The material parameters like refractive index and absorption rate.
TABLE I: BOSIM Properties and Evaluation Metrics
Coverages BOSIM Coverages BOSIM
Properties 5: Dispersion X1: Material X 5.1: chromatic dispersion X1.1: electrical coefficient X 5.1.1: material dispersion X1.2: optical coefficient X 5.1.2: waveguide dispersion X
5.2: free-carrier plasma dispersion X2: Electrical Elements X 6: SPICE compatibility X2.1: horizontal PN X2.2: vertical PN X Evaluation Metrics2.3: PIN X 1: Latency X2.4: MIS Capacitor X 2: Power X
3: SNR X3: Optical Elements X 4: Transmission Spectrum X3.1: phase shifter X 5: Eye diagram X3.2: bus waveguide X 6: Carrier Distribution X3.3: directional coupler X 7: Area Consumption X3.4: MMI X
Comparative Studies4: Optical Modulator X 1: MZI vs. MR X4.1: MZI X 2: PN vs. PIN vs. MIS X4.2: MR X 3: PN-V vs. PN-H X
7
4. INSTALLATION GUIDELINE
A. RequirementsIn order to compile BOSIM successfully a few softwares and libraries should be present in your system.
Most of recent Linux distributions would attend these requirements, we provide here a reference just incase you encounter any problem.
Table II shows a summarized list of dependencies of BOSIM divided in two classes: those mandatoryand those optional. Make sure all of the mentioned external softwares are properly set in your environmentvariables (PATH).
TABLE II: External dependencies
Software Version Purpose Quick referenceGCC 4.8.5+ Metric Compilation https://gcc.gnu.org/
Python 3.4+ Excecute the BOSIM Code https://www.python.org/
Package Version Purpose Quick referencescipy 1.3.0+ scientific computing with python https://www.scipy.org/
h5py 2.7.0+ HDF5 binary data format with python https://www.h5py.org/
numpy 1.13.3+ scientific computing with python https://numpy.org/
matplotlib 2.0.0+ visualization with python https://matplotlib.org/
jupyter 4.3.0+ web-based interactive development environment https://jupyter.org/
In Ubuntu, you can simply install the packages by running the following commands:
$ sudo apt-get update$ sudo apt-get install build-essential$ sudo apt-get install python3$ sudo apt-get install python3-pip$ sudo pip3 install scipy$ sudo pip3 install h5py$ sudo pip3 install numpy$ sudo pip3 install matplotlib$ sudo pip3 install jupyter
B. Quick CompilationThe easiest way to compile BOSIM is to enter the BOSIM root directory and type make install.
$ cd /home/BOSIM$ make install
This simple step explained here suppose that the root BOSIM folder is located at /home/BOSIM. Thiswill compile the default EIM solver, Metric, and put the binary at: /EIM/***eim.exe.
8
5. RUNNING A SIMULATION
A. Quick Notebook DemoThe easiest way to try BOSIM is through the jupyter notebook. You can follow the command below.
$ jupyter notebook Demo.ipynb
Fig. 6: See our examples through simulating in the Jupyter Notebook
9
B. Transient and Steady State SimulationsExample 5.1. automatically run the Example 1 in Jupyter Notebook:
run each lines by shift+enter
(a) (b)
Fig. 7: Notebook Demo: Example 1
In the terminal, you can also simply type makeand get the results in home/BOSIM/data/temp/output.
$ cd /home/BOSIM$ make
10
C. Thermal Optical EffectExample 5.2. Similarly, you can explore the thermal-optical effect of optical switches.
run each lines by shift+enter
Fig. 8: Notebook Demo: Example 2
In the command line, you can run temperature.py$ cd /home/BOSIM$ python study/temperature.py
You can also find the results in home/BOSIM/data/temp/output.
0 20 40 60 80 100Temperature ( C)
0.0
0.5
1.0
P out
/Pin Pthru/Pin
Pdrop/PinVmaxVmin
Fig. 9: Result on the temperature-Pout/Pin curves (after the image polish)
11
D. Process VariationExample 5.3. Similarly, you can try the third example to explore the thermal optical effect of device.
run each lines by shift+enter
(a) (b)
Fig. 10: Notebook Demo: Example 3
12
E. Design Space ExplorationExample 5.4. Similarly, you can try the third example to explore the thermal optical effect of device.
run each lines by shift+enter
(a) (b)
Fig. 11: Notebook Demo: Example 4
$ cd /home/BOSIM$ python study/MRStudy.py
You can also find the results in home/BOSIM/data/temp/output.
Fig. 12: Result on doping and voltage exploration (image polished by gnuplot)
13
6. FILE HIERARCHY
Table III shows the file hierarchy of our simulator. BOSIM adopts the object-oriented programming andwe use the component name as the python file name. The files are separated into four types: source code,EIM solver, user space and experiment. The source code class has four directories: lib_M (materialmodel library), lib_O (optical component library), lib_E (electrical component library) and root.You can find directional coupler class, MMI class, waveguide class, phaseshifter class, MR class andMZI class in the optical library. Developers can easily add their own component file in the opticallibrary. Similarly, in the electrical library, we builds MOS, PIN, PN class to obtain the carrier distribution,together with the spice plugin (diode_spice.py). The root directory contains the top-level class,
TABLE III: BOSIM root directory organization and description
Type Directory File Descriptionlib M Material Model.py Material Model
Coupler Model.py Coupler ModelMMI Model.py MMI Model
Waveguide.py Waveguide Modellib O PhaseShifter Model.py Phaseshifter Model
MR Model.py MR ModelMZI Model.py MZI Model
plot3Do.py plot optical figuresdiode spice.py diode spice
MOS Model.py MOS ModelSource Code lib E PIN Model.py PIN Model
PN Model.py PN Modelpnschematic.py pnschematic
plot3De.py plot electrical figuresBEE Model.py Basic Electrical Element ModelBOE Model.py Basic Optical Element Model
BOSIM Model.py BOSIM Model. (root) Global dict.py Global Dictionary
Global Var.py Global Variablemeasure.py measure
schematic.py plot schematic figureswpneim-p.cpp parallel solver for PN-based phaseshifter
pineim.cpp solver for PIN-based phaseshifterpineim-p.cpp parallel solver for PIN-based phaseshifter
EIM solver Metric wgeim.cpp waveguide solvermmieim.cpp MMI solver
other files inherit from Metric EIM solverhttp://metric.computational-photonics.eu/
MZI/ MZI collectionMR/ MR collection
temp/ link to the folderBOSIM.config BOSIM profile configuration
User Space data MR.config MR profile configurationMZI.config MZI profile configuration
PN.config PN diode profile configurationPIN.config PIN diode profile configurationMIS.config MIS capacitance profile configuration
utils.py utilspvstudy.py MZI design space exploration file
Experiment study MZStudy.py MZI design space exploration fileMRStudy.py MR design space exploration filePSStudy.py Phaseshifter design space exploration file
14
named as BOSIM_model.py. This file is the program entry, and it calls Global_Var.py to load allthe device profiles from user space. The user space contains the design kits, including device profilesand BOSIM settings. When you study the optical switch, like MR, you can create a folder under thedata/MR/ path and then link this folder to data/temp. Or you can simply create the temp folderand add the component configuration file, like MR.config and PN.config. The global variable fileGlobal_Var.py load the configuration files from the path data/temp. As for the design spaceexploration and exploitation, we give some examples in the study folder. We also provides manyuseful functions for data processing and graphics, as can be viewed in plot3Do.py, plot3De.py,measure.py, measure.py, measure.py, pnschematic.py, and utils.py.
A. MakeFile
FILENAME=study/MRStudy.py
OFILENAME=BOE_Model.pyEFILENAME=BEE_Model.pyINPUTNAME=data/o-device.config
all: cleanpython3.5 $(FILENAME)rm -rf __pycache__rm -rf ./study/__pycache__rm -rf ./lib_E/__pycache__rm -rf ./lib_O/__pycache__rm -rf ./lib_M/__pycache__e:python3.5 $(EFILENAME)
o:python3.5 $(OFILENAME)
edit:vim $(FILENAME)
edite:
vim $(EFILENAME)
edito:vim $(EFILENAME)
editi:vim $(INPUTNAME)
clean:rm -rf __pycache__rm -rf *.pycrm -rf corerm -rf ./study/__pycache__rm -rf ./lib_E/__pycache__rm -rf ./lib_O/__pycache__rm -rf ./lib_M/__pycache__rm -rf ./study/__pycache__rm -rf ./data/temp/output/*.pngrm -rf ./data/temp/output/*.epsrm -rf ./data/temp/output/*.pdf
dist-clean: # remove interval resultsrm ./data/temp/MMI/MMI.h5
B. Configuration File
1) BOSIM configuration file:
Electrical: PN.configOptical: MR.config
EIM_regenerate: yes
Analysis State: steady//Analysis State: transientMiddle Fig: no//Middle Fig: yesEye_Diagram:yes
2) MR configuration file:
Optical Device: MRCouplerType: Coupler
//====================================//Semiconductor Model Params//====================================substrate refractive index: 1.45 //SiO2guiding film refractive index: 3.45 //siliconclad refractive index: 1.45 //SiO2air refractive index: 1.0 //air
guiding film absorption: 0.00004 umˆ-1
//====================================//Device Model Params
//====================================//Wavegudide
// Phaseshifterrib width: 0.4 umfilm height: 0.4 umetching depth: 0.3 umcladding height: 1.2 um
pn offset: 0 umpn horizontal offset: -0.15 umpn vertical offset: 0.1 um
//Couplercoupler_length: 0.1 umcoupler_width: 0.5 umcoupler_gap: 0.18 um
15
coupler_effective_refractive_index: 3.02coupler_kab: 3.3
//MRradius: 10 umPhaseshifter Ratio: 0.8407 // 10 um heater
//Thermal Tuningwavelength shift: -2.68 nm
//====================================
//Simulation Params//====================================
input signal field_amplitude(Ein): 1
min_wavelength: 1.310 ummax_wavelength: 1.310 umwavelength resolution: 1
//PN, EIMpdwidth_SweepNum: 5E1 // number
3) PN configuration file:Electrical Device: PNPNType: wrapped-n//PNType: HorizontalModulation Mechanism: depletaion
//====================================//Semiconductor Model Params//====================================P-area-NA: 5.0e17 cmˆ-3N-area-ND: 1.0e18 cmˆ-3P-area-x: 0.6 umN-area-x: 0.6 um
Temperature: 300 K
//===constant===epsilon0: 8.854e-14epsilonr_Si: 11.7bolzman constant: 1.3806e-23
q: 1.60e-19 Cni: 1.0E10 cmˆ-3
Lp: 2 umLn: 1 um
Deplation Width Correction Factor: 1
//====================================//Spice Model Params//====================================TT: 0.5 nsSeries-Resistance: 55 ohmI_S: 1.0E-8 uA
//emission coefficientn_pn: 1V0: 1.0 VCj0: 1.5 pF
Vt: 0.0259
q: 1.6E-19 CIBV: 1000 uA// reverse breakdown voltageBV: 40.0 V
//====================================//Simulation Params//====================================//Voltage//Transient State =====DC_Bias: -2 V //high bitrateVpp: 3.2 VInit_Voltage: 2 VVSweepnum: 1E2WidthSweepnum: 5E2
//freq 5GbpsPeriod: 200 psTimeSweepnum: 1E2Periodnum: 10EyeScale: 20 ps // eye digramEyeColor: C2EyePeriodnum: 3EyePointloc: 0.6Eyeyaxisprofile: [-0.3,1.0,8] // y axis,
//Steady State ====================Volt Measure Point: {1, -10, 61} V
C. Terminology-Variable DictionaryHere is the dictionary about the terminology in the configuration file and the related variable name in
the source code:
Global_dict.py:
# ==============================# Electrical_Parameters# =============================="Electrical Device":"edevtype","PNType": "pntype","Modulation Mechanism": "modmech","Analysis State": "analysisstat","Middle Fig": "middlefigflag","Eye_Diagram": "eyediagflag",
#=== Semiconductor"P-area-NA":"N_A","I-area-NI":"N_I","N-area-ND":"N_D",
"P-area-x":"x_p","I-area-x":"x_i","N-area-x":"x_n",
"Temperature": "tempr",
"epsilon0": "epsilon0","epsilonr_Si": "epsilonrsi","bolzman constant": "k_sem",
"q": "q_elec","ni": "ni",
"Dp": "Dp","Dn": "Dn",
16
"Lp": "Lp","Ln": "Ln","Deplation Width Correction Factor":"alpha_wd","Absorption Correction Factor":"alpha_absorp",
#=== Spice Model Params"TT": "tau","Series-Resistance":"Rs","I_S":"I_S","n_pn":"n_pn","V0": "V0","V_hj": "V_hj","Cj0": "Cj0","Vt": "Vt",# "q": "q","IBV": "IBV","BV": "BV",
#===============================#====== Simulation Params ======#==============================="Min_Voltage":"vmin","Max_Voltage":"vmax","Init_Voltage":"vinit","VSweepnum":"vsweepnum","Volt Measure Point":"vmm","spectrum color": "color_spec_fig","spectrum axis limit": "xylim_spec_fig",
"DC_Bias":"dc_bias","Vpp": "vpp","Frequency":"freq","Period":"t_cycle","Periodnum":"num_cycle","TimeSweepnum":"tsweepnum","WidthSweepnum":"wsweepnum","naSweepnum":"nasweepnum","pdwidth_SweepNum":"pdwidth_num","EyeScale":"eyescale","EyeColor":"eyecolor","EyePeriodnum":"eyeperiodnum","EyePointloc":"eyepointloc","Eyeyaxisprofile":"eyeyaxisprofile",
# ==============================# Optical_Parameters# =============================="Optical Device":"odevtype",
# === Semiconductor Model Params"substrate refractive index": "n_sub","guiding film refractive index": "n_ps",
"clad refractive index": "n_clad","air refractive index": "n_air",
"guiding film absorption": "alpha_ps0","waveguide absorption": "alpha_wg0",
# === Phaseshifter"rib width": "rib_width_ps","film height": "h_film_ps","etching depth":"d_etch_ps","cladding height": "h_clad_ps","pn offset": "offset_pn_ps","pn horizontal offset": "offset_pn_hori_ps","pn vertical offset": "offset_pn_vert_ps","Phaseshifter Length": "len_ps","Arm Difference Length": "len_arm_diff",
# Coupler----"coupler_length":"len_cp","coupler_width":"width_cp","coupler_gap":"gap_cp","coupler_height":"height_cp","coupler_effective_refractive_index":"nref_cp","coupler_beta":"beta_cp","coupler_kab":"kab_cp",
# MR----"input signal field_amplitude(Ein)": "E_in","radius":"Rmr","Phaseshifter Ratio": "Rmr_ratio","wavelength shift": "lam_shift",# "waveguide_refractive_index":"nref_wg",
# MZ----"CouplerType":"couplertype","MMI-1 Type": "type1_MMI","MMI-2 Type": "type2_MMI","MMI width": "width_MMI_cp","MMI waveguide width":"width_MMI_wg","MMI waveguide thickness": "thickness_MMI",
"MMI-waveguide offset": "offset_MMI",# "propagation_loss":"propagation_loss"
#===============================#====== Simulation Params ======#==============================="central wavelength": "lam0","min_wavelength": "lam_min","max_wavelength":"lam_max","wavelength resolution": "lam_num",
17
7. AGREEMENT AND LICENSE
A. Agreement
BOSIM is made openly available under the following license. Please cite the following paper if it is used.
Xuanqi Chen, Zhifei Wang, Yi-Shing Chang, Jiang Xu, Jun Feng, Peng Yang, Zhehui Wang, Luan H. K.Duong, Modeling and Analysis of Optical Modulators Based on Free-Carrier Plasma Dispersion Effect,IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems (TCAD), vol. 39, no.5, pp. 977-990, May 2020.
B. Copyright and License
Copyright c© 2015-2020 The Hong Kong University of Science and Technology
All rights reserved.
Redistribution and use in source and binary forms, with or without modification, are permitted providedthat the following conditions are met.
1) Redistributions of source code must retain the above copyright notice, this list of conditions andthe following disclaimer.
2) Redistributions in binary form must reproduce the above copyright notice, this list of conditions andthe following disclaimer in the documentation and/or other materials provided with the distribution.
3) Neither the name of the Hong Kong University of Science and Technology nor the names of itscontributors may be used to endorse or promote products derived from this software without specificprior written permission.
THIS SOFTWARE IS PROVIDED BY THE HONG KONG UNIVERSITY OF SCIENCE AND TECH-NOLOGY “AS IS” AND ANY EXPRESS OR IMPLIED WARRANTIES, INCLUDING, BUT NOTLIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PAR-TICULAR PURPOSE ARE DISCLAIMED. IN NO EVENT SHALL THE HONG KONG UNIVERSITYOF SCIENCE AND TECHNOLOGY BE LIABLE FOR ANY DIRECT, INDIRECT, INCIDENTAL,SPECIAL, EXEMPLARY, OR CONSEQUENTIAL DAMAGES (INCLUDING, BUT NOT LIMITED TO,PROCUREMENT OF SUBSTITUTE GOODS OR SERVICES; LOSS OF USE, DATA, OR PROFITS;OR BUSINESS INTERRUPTION) HOWEVER CAUSED AND ON ANY THEORY OF LIABILITY,WHETHER IN CONTRACT, STRICT LIABILITY, OR TORT (INCLUDING NEGLIGENCE OR OTH-ERWISE) ARISING IN ANY WAY OUT OF THE USE OF THIS SOFTWARE, EVEN IF ADVISEDOF THE POSSIBILITY OF SUCH DAMAGE.
8. REVISION HISTORY
TABLE IV: Revision History
Version Changes Date1.0 Internal release 1-Sep-16
2.0 Design space exploration and Monte-Carlo simulation 1-Sep-17
2.5 Thermo-optical analysis 1-Sep-18
3.0 Public release 1-Sep-20
18
REFERENCES[1] A. Liu et al., “A high-speed silicon optical modulator based on a metal— oxide— semiconductor capacitor,” Nature, 2004.[2] L. Liao et al., “High speed silicon Mach-Zehnder modulator,” Optics express, 2005.[3] L. Liao et al., “40 Gbit/s silicon optical modulator for highspeed applications,” Electronics letters, 2007.[4] A. Liu et al., “High-speed optical modulation based on carrier depletion in a silicon waveguide,” Optics express, 2007.[5] P. Dong et al., “High-speed low-voltage single-drive push-pull silicon Mach-Zehnder modulators,” Optics express, 2012.[6] P. Dong et al., “Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator,” Optics express, 2009.[7] P. Dong et al., “High-speed silicon microring modulator with a 1 V drive voltage,” in Group IV Photonics, 2010.[8] P. Dong et al., “Wavelength-tunable silicon microring modulator,” Optics express, 2010.[9] W. M. J. Green et al., “Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator,” Optics express, 2007.
[10] J. C. Rosenberg et al., “Low-Power 30 Gbps Silicon Microring Modulator,” in CLEO, 2011.[11] Q. Xu et al., “Micrometre-scale silicon electro-optic modulator,” Nature, 2005.[12] Q. Xu et al., “12.5 Gbit/s carrier-injection-based silicon micro-ring silicon modulators,” Optics express, 2007.[13] S. Manipatruni et al., “Ultra-low voltage, ultra-small mode volume silicon microring modulator,” Optics express, 2010.[14] S. Akiyama et al., “50-Gb/s silicon modulator using 250-µm-Long phase shifter based-on forward-biased pin diodes,” in GFP, 2012.[15] J. W. Park et al., “High-modulation efficiency silicon Mach-Zehnder optical modulator based on carrier depletion in a PN Diode,” Optics express, 2009.[16] G. Kim et al., “Compact-sized high-modulation-efficiency silicon Mach—Zehnder modulator based on a vertically dipped depletion junction phase shifter
for chip-level integration,” Optics letters, 2014.[17] X. Xiao et al., “High-speed SOI microring modulator integrated with grating couplers,” in Group IV Photonics, 2010.[18] Y. Hu et al., “High-speed silicon modulator based on cascaded microring resonators,” Optics express, 2012.[19] X. Xiao et al., “High-speed, low-loss silicon Mach—Zehnder modulators with doping optimization,” Optics express, 2013.[20] J. Ding et al., “Electro-Optical Response Analysis of a 40 Gb/s Silicon Mach-Zehnder Optical Modulator,” JLT, 2013.[21] L. Yang et al., “High-speed silicon Mach-Zehnder optical modulator with large optical bandwidth,” in OIC, 2014.[22] H. Xu et al., “Demonstration and Characterization of High-Speed Silicon Depletion-Mode Mach-Zehnder Modulators,” JSTQE, 2014.[23] C. Li et al., “Silicon microring carrier-injection-based modulators/switches with tunable extinction ratios and OR-logic switching by using waveguide
cross-coupling,” Optics express, 2007.[24] Y. Shen et al., “Deep learning with coherent nanophotonic circuits,” Nature photonics, 2017.[25] M. K. Park et al., “Label-free aptamer sensor based on silicon microring resonators,” SABC, 2013.[26] P. Trocha et al., “Ultrafast optical ranging using microresonator soliton frequency combs,” Science, 2018.[27] D. J. Thomson et al., “High contrast 40Gbit/s optical modulation in silicon,” Optics express, 2011.[28] D. J. Thomson et al., “50-Gb/s Silicon Optical Modulator,” PTL, 2012.[29] F. Y. Gardes et al., “40 Gb/s silicon photonics modulator for TE and TM polarisations,” Optics express, 2011.[30] M. Ziebell et al., “40 Gbit/s low-loss silicon optical modulator based on a pipin diode,” Optics express, 2012.[31] D. MarrisMorini et al., “Low loss 40 Gbit/s silicon modulator based on interleaved junctions and fabricated on 300 mm SOI wafers,” Optics express,
2013.[32] A. Brimont et al., “High-contrast 40 Gb/s operation of a 500 Mm long silicon carrier-depletion slow wave modulator,” Optics letters, 2012.[33] J. C. Rosenberg et al., “A 25 Gbps silicon microring modulator based on an interleaved junction,” Optics express, 2012.[34] X. Xiao et al., “High-speed on-chip photonic link based on ultralow-power microring modulator,” in OFC, 2014.[35] J. Sun et al., “A 128 Gb/s PAM4 Silicon Microring Modulator,” in OFC, 2018.