buk9y53-100b n-channel trenchmos logic level fetbuk9y53-100b_1 product data sheet rev. 01 — 30...

1. Product profile

1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology.

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

BUK9Y53-100BN-channel TrenchMOS logic level FETRev. 01 — 30 August 2007 Product data sheet

n Very low on-state resistance n Q101 compliantn 175 °C rated n Logic level compatible

n Automotive systems n General purpose power switchingn Motors, lamps and solenoids n 12 V, 24 V and 42 V loads

n EDS(AL)S ≤ 85 mJ n RDSon = 45 mΩ (typ)n ID ≤ 23 A n Ptot ≤ 75 W

Table 1. Pinning

Pin Description Simplified outline Symbol

1, 2, 3 source (S)

SOT669 (LFPAK)

4 gate (G)

mb mounting base; connected to drain (D)

mb

1 2 3 4 S1 S2 S3

D

G

mbl798

Nexperia BUK9Y53-100BN-channel TrenchMOS logic level FET

3. Ordering information

4. Limiting values

[1] Conditions:

a) Maximum value not quoted. Repetitive rating defined in Figure 16.

b) Single-pulse avalanche rating limited by Tj(max) of 175 °C.

c) Repetitive avalanche rating limited by Tj(avg) of 170 °C.

d) Refer to application note AN10273 for further information.

Table 2. Ordering information

Type number Package

Name Description Version

BUK9Y53-100B LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669

Table 3. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - 100 V

VDGR drain-gate voltage (DC) RGS = 20 kΩ - 100 V

VGS gate-source voltage - ±15 V

ID drain current Tmb = 25 °C; VGS = 5 V; see Figure 2 and 3 - 23 A

Tmb = 100 °C; VGS = 5 V; see Figure 2 - 16 A

IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 - 94 A

Ptot total power dissipation Tmb = 25 °C; see Figure 1 - 75 W

Tstg storage temperature −55 +175 °C

Tj junction temperature −55 +175 °C

Source-drain diode

IDR reverse drain current Tmb = 25 °C - 23 A

IDRM peak reverse drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs - 94 A

Avalanche ruggedness

EDS(AL)S non-repetitive drain-source avalancheenergy

unclamped inductive load; ID = 23 A;VDS ≤ 100 V; VGS = 5 V; RGS = 50 Ω; starting atTj = 25 °C

- 85 mJ

EDS(AL)R repetitive drain-source avalancheenergy

- [1] -

BUK9Y53-100B_1

Product data sheet Rev. 01 — 30 August 2007 2 of 12

© Nexperia B.V. 2017. All rights reserved


VGS ≥ 5 V

Fig 1. Normalized total power dissipation as afunction of mounting base temperature

Fig 2. Continuous drain current as a function ofmounting base temperature

Tmb = 25 °C; IDM is single pulse.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

Tmb (°C)0 20015050 100

003aab844

40

80

120

Pder(%)

0

Tmb (°C)0 20015050 100

003aab225

10

20

30

ID(A)

0

Pder

Ptot

Ptot 25°C( )------------------------ 100%×=

003aab226

10

1

102

103

ID(A)

10−1

VDS (V)1 10310210

tp = 10 µs

1 ms

100 µs

10 ms100 ms

DC

Limit RDSon = VDS / ID

BUK9Y53-100B_1




5. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 - - 2 K/W

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

003aab219

tp (s)10−6 10−1 110−210−310−5 10−4

1

10−1

1

Zth(j−mb)(K/W)

10−2

tp

tp

T

P

t

Tδ =

single pulse

0.2

0.1

0.05

0.02

δ = 0.5

BUK9Y53-100B_1




6. Characteristics

Table 5: CharacteristicsTj = 25 °C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V

Tj = 25 °C 100 - - V

Tj = −55 °C 89 - - V

VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; see Figure 9 and 10

Tj = 25 °C 1.1 1.5 2 V

Tj = 175 °C 0.5 - - V

Tj = −55 °C - - 2.3 V

IDSS drain leakage current VDS = 100 V; VGS = 0 V

Tj = 25 °C - 0.02 1 µA

Tj = 175 °C - - 500 µA

IGSS gate leakage current VGS = ±15 V; VDS = 0 V - 2 100 nA

RDSon drain-source on-state resistance VGS = 5 V; ID = 10 A; see Figure 6 and 8

Tj = 25 °C - 45 53 mΩ

Tj = 175 °C - - 132 mΩ

VGS = 4.5 V; ID = 10 A - - 59 mΩ

VGS = 10 V; ID = 10 A - 41 49 mΩ

Dynamic characteristics

QG(tot) total gate charge ID = 15 A; VDS = 80 V; VGS = 5 V;see Figure 14

- 18 - nC

QGS gate-source charge - 4.1 - nC

QGD gate-drain charge - 8 - nC

Ciss input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz;see Figure 12

- 1600 2130 pF

Coss output capacitance - 141 170 pF

Crss reverse transfer capacitance - 60 82 pF

td(on) turn-on delay time VDS = 30 V; RL = 2.5 Ω;VGS = 5 V; RG = 10 Ω

- 18 - ns

tr rise time - 26 - ns

td(off) turn-off delay time - 52 - ns

tf fall time - 16 - ns

Source-drain diode

VSD source-drain voltage IS = 25 A; VGS = 0 V; see Figure 15 - 0.85 1.2 V

trr reverse recovery time IS = 20 A; dIS/dt = −100 A/µs;VGS = 0 V; VR = 30 V

- 71 - ns

Qr recovered charge - 83 - nC

BUK9Y53-100B_1




Tj = 25 °C Tj = 25 °C; ID = 20 A

Fig 5. Output characteristics: drain current as afunction of drain-source voltage; typical values

Fig 6. Drain-source on-state resistance as a functionof gate-source voltage; typical values

Tj = 25 °C

Fig 7. Drain-source on-state resistance as a functionof drain current; typical values

Fig 8. Normalized drain-source on-state resistancefactor as a function of junction temperature

VDS (V)0 1084 62

003aab421

20

40

60

ID(A)

0

VGS (V) = 1554

3.4

3.2

3

2.8

2.6

2.42.2

VGS (V)3 15126 9

003aab423

48

44

52

56

RDSon(mΩ)

40

ID (A)0 504020 3010

003aab422

60

40

80

100

RDSon(mΩ)

20

VGS (V) = 31554

3.8

3.4

03aa29

0

1

2

3

-60 0 60 120 180Tj (°C)

a

aRDSon

RDSon 25°C( )------------------------------=

BUK9Y53-100B_1




ID = 1 mA; VDS = VGS Tj = 25 °C; VDS = VGS

Fig 9. Gate-source threshold voltage as a function ofjunction temperature

Fig 10. Sub-threshold drain current as a function ofgate-source voltage

Tj = 25 °C; VDS = 25 V VGS = 0 V; f = 1 MHz

Fig 11. Forward transconductance as a function ofdrain current; typical values

Fig 12. Input, output and reverse transfer capacitancesas a function of drain-source voltage; typicalvalues

Tj (°C)−60 1801200 60

003aab986

1.0

1.5

0.5

2.0

2.5

VGS(th)(V)

0.0

min

typ

max

003aab987

VGS (V)0 321

10−4

10−5

10−2

10−3

10−1

ID(A)

10−6

min typ max

ID (A)5 302515 2010

003aab425

30

40

50

gfs(S)

20

VDS (V)10−1 102101

003aab418

1000

15000

500

2000

2500

C(pF)

0

Ciss

Coss

Crss

BUK9Y53-100B_1




VDS = 25 V Tj = 25 °C; ID = 10 A

Fig 13. Transfer characteristics: drain current as afunction of gate-source voltage; typical values

Fig 14. Gate-source voltage as a function of gatecharge; typical values

VGS = 0 V See Table note 1 of Table 3 Limiting values.

(1) Single-pulse; Tj = 25 °C.

(2) Single-pulse; Tj = 150 °C.

(3) Repetitive.

Fig 15. Source (diode forward) current as a function ofsource-drain (diode forward) voltage; typicalvalues

Fig 16. Single-pulse and repetitive avalanche rating;avalanche current as a function of avalanchetime

VGS (V)0 431 2

003aab424

20

30

10

40

50

ID(A)

0

Tj = 175 °C Tj = 25 °C

QG (nC)0 20155 10

003aab420

2

3

1

4

5

VGS(V)

0

VDS = 14 V

VDS = 80 V

VSD (V)0.0 1.00.80.4 0.60.2

003aab419

20

30

10

40

50

IS(A)

0

Tj = 175 °C

Tj = 25 °C

003aab224

tAL (ms)10−3 10110−2 10−1

10

102

IAL(A)

1

(1)

(2)

(3)

BUK9Y53-100B_1




7. Package outline

Fig 17. Package outline SOT669 (LFPAK)

REFERENCESOUTLINEVERSION

EUROPEANPROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT669 MO-235 04-10-1306-03-16

0 2.5 5 mm

scale

e

E1

b

c2

A2

A2 b cA eUNIT

DIMENSIONS (mm are the original dimensions)

mm 1.100.95

A3A1

0.150.00

1.201.01

0.500.35

b2

4.413.62

b3

2.22.0

b4

0.90.7

0.250.19

c2

0.300.24

4.103.80

6.25.8

H

1.30.8

L2

0.850.40

L

1.30.8

L1

8°0°

w yD(1)

5.04.8

E(1)

3.33.1

E1(1)D1

(1)

max

0.25 4.20 1.27 0.25 0.1

1 2 3 4

mountingbase

D1

c

Plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669

E

b2

b3

b4

H D

L2

L1

A

Aw M

C

C

X

1/2 e

y C

θ

θ

(A )3

L

A

A1

detail X

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

BUK9Y53-100B_1




8. Revision history

Table 6. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BUK9Y53-100B_01 20070830 Product data sheet - -

BUK9Y53-100B_1




9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product statusinformation is available on the Internet at URL http://www.nexperia.com.

9.2 Definitions

Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. Nexperia does not give anyrepresentations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequences ofuse of such information.

Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet is intendedfor quick reference only and should not be relied upon to contain detailed andfull information. For detailed and full information see the relevant full datasheet, which is available on request via the local Nexperia salesoffice. In case of any inconsistency or conflict with the short data sheet, thefull data sheet shall prevail.

9.3 Disclaimers

General — Information in this document is believed to be accurate andreliable.However,Nexperiadoesnotgiveany representationsorwarranties, expressed or implied, as to the accuracy or completeness of suchinformation and shall have no liability for the consequences of use of suchinformation.

Right to make changes — Nexperia reserves the right tomakechanges to information published in this document, including withoutlimitation specifications and product descriptions, at any time and withoutnotice. This document supersedes and replaces all information supplied priorto the publication hereof.

Suitability for use — Nexperia products are not designed,authorized or warranted to be suitable for use in medical, military, aircraft,space or life support equipment, nor in applications where failure ormalfunctionofaNexperiaproductcan reasonablybeexpected to

result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and thereforesuch inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) may cause permanentdamage to the device. Limiting values are stress ratings only and operation ofthe device at these or any other conditions above those given in theCharacteristics sections of this document is not implied. Exposure to limitingvalues for extended periods may affect device reliability.

Terms and conditions of sale — Nexperia products are soldsubject to the general terms and conditions of commercial sale, as publishedat http://www.nexperia.com/profile/terms, including those pertaining to warranty,intellectual property rights infringement and limitation of liability, unlessexplicitly otherwise agreed to in writing by Nexperia. In case ofany inconsistency or conflict between information in this document and suchterms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpretedor construed as an offer to sell products that is open for acceptance or thegrant, conveyance or implication of any license under any copyrights, patentsor other industrial or intellectual property rights.

9.4 TrademarksNotice: All referenced brands, product names, service names and trademarksare the property of their respective owners.

10. Contact information

For additional information, please visit: http://www .nexperia.com

For sales office addresses, send an email to: [email protected]

Document status [1] [2] Product status [3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

BUK9Y53-100B_1



http://www.nexperia.com

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11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 11.1 General description. . . . . . . . . . . . . . . . . . . . . . 11.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 12 Pinning information . . . . . . . . . . . . . . . . . . . . . . 13 Ordering information . . . . . . . . . . . . . . . . . . . . . 24 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 25 Thermal characteristics. . . . . . . . . . . . . . . . . . . 46 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 57 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 98 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 109 Legal information. . . . . . . . . . . . . . . . . . . . . . . 119.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 119.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 119.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 1110 Contact information. . . . . . . . . . . . . . . . . . . . . 1111 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 30 August 2007

buk9y53-100b n-channel trenchmos logic level fetbuk9y53-100b_1 product data sheet rev. 01 — 30...

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