bvdss= d to gfile2.dzsc.com/product/18/06/09/1127976_153924774.pdf · d i d=250μa,v ds=v gs 3-5 v...

800V N-Channel MOSFET-T

Absolute Maximum Ratings

(Ta=25

unless otherwise noted)

Symbol Parameter Value Unit

VDSS Drain-Source Voltage 800 V

ID Drain CurrentTj=25

2.0 A

Tj=100 1.25

VGS(TH) Gate Threshold Voltage ±30 V

EAS

Single Pulse Avalanche Energy (note1) 180

mJ

IAR

Avalanche Current (note2) 2.0 A

PD

Power Dissipation (Tj=25) 50 W

Tj Junction Temperature(Max) 150

Tstg Storage Temperature -55~+150

TL Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds 300

Thermal Characteristics

Symbol Parameter Typ. Max. Unit

RθJC

Thermal Resistance,Junction to Case - 2.5

/W

RθJA Thermal Resistance,Junction to Ambient - 110

/W

Features: Low

Intrinsic Capacitances.

Excellent Switching Characteristics.

Extended Safe Operating Area.

Unrivalled Gate Charge :Qg=12nC (Typ.).

BVDSS=800V,ID=2A

RDS(on) : 6.3Ω

(Max) @VG=10V

100% Avalanche Tested

FIR2N80BPG,FIR2N80LG

REV:1.0 /9@ 2018 Copyright By American First Semiconductor

TO‐252 TO‐251

PIN Connection TO-251/252

Marking Diagram

FIR2N80BP FIR2N80L A = Assembly Location

Y = Year

WW = Work Week

= Specific Device CodeFIR2N80BPG/LG

YAWW YAWW

G

D

S

gSchematic dia ram

Electrical Characteristics

(Ta=25 unless otherwise noted)

Symbol

Parameter

Test Condition

Min. Typ. Max. Unit

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage ID=250μA，VGS=0 800 - - V

BVDSS/TJ Breakdown Voltage Temperature Coefficient

ID=250μA ,Reference to 25

- 0.9

- V/

IDSS

Zero Gate Voltage Drain Current VDS=800V, VGS=0V - - 10

μA VDS=640V, Tj=125

100

IGSSF

Gate-body leakage Current, Forward VGS=+30V, VDS=0V - - 100

nA IGSSR

Gate-body leakage Current, Reverse VGS=-30V, VDS=0V - - -100

On Characteristics

VGS(TH)

Date Threshold Voltage

ID=250μA,VDS=VGS 3

-

5

V

RDS(ON)

Static Drain-Source On-Resistance ID=1A,VGS=10V - - 6.3 Ω

Dynamic Characteristics

Ciss Input Capacitance VDS=25V，VGS=0，

f=1.0MHz

- 589

-

pF Coss Output Capacitance - 45

-

Crss Reverse Transfer Capacitance - 5.5

-

Switching Characteristics

Td(on) Turn-On Delay Time

VDD=400V，ID=2A RG=25Ω

(Note 3,4)

- 12

35

ns Tr Turn-On Rise Time -

30 70Td(off) Turn-Off

Delay Time - 25

60 Tf Turn-Off Rise Time -

28

65Qg Total Gate Charge

VDS=640V,VGS=10V，ID=2A

(Note 3,4)

- 12

15

nC

Qgs Gate-Source

Charge - 2.6

- Qgd Gate-Drain Charge - 6.0

-

Drain-Source Diode Characteristics and Maximum Ratings

Is Max. Diode Forward Current - - - 1.8A

ISM

Max. Pulsed Forward Current

- - - 7.2VSD

Diode Forward Voltage ID=2A - - 1.4 VTrr Reverse Recovery Time IS=2A,VGS

=0V diF/dt=100A/μs

(Note3)

- 480

- nS

Qrr

Reverse Recovery Charge - 2.0

- μC

Notes : 1, L=105mH, IAS=2A, VDD=50V, RG=25Ω, Starting TJ

=25°C 2, Repetitive Rating : Pulse width limited by maximum junction temperature 3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 4, Essentially Independent of Operating Temperature

www.First-semi.com /9


Typical Characteristics

0 3 12 150

2

4

6

8

10

12

VDS = 400V

VDS = 160V

VDS = 640V

※ Note : ID = 3A

V GS, G

ate-

Sour

ce V

oltag

e [V]

6 9

QG, Total Gate Charge [nC]

0.2 0.4 1.2 1.410-1

100

101

150※ Notes :

1. VGS = 0V2. 250μ s Pulse Test

25

I DR, R

ever

se D

rain

Curre

nt [A

]

0.6 0.8 1.0

VSD, Source-Drain voltage [V]8420 6

2

4

6

8

10

VGS = 20V

VGS = 10V

※ Note : TJ = 25

RDS

(ON)

[Ω],

Drain

-Sou

rce

On-R

esist

ance

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

ID, Drain Current [A]

Figure 3. On-Resistance Variation vsDrain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation with Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

10-1 10110-2

10-1

100

101

VGSTop : 15.0 V 10.0 V

8.0 V7.0 V6.5 V6.0 V

Bottom : 5.5 V

※ Notes :1. 250μ s Pulse Test2. TC = 25

I D, D

rain

Curre

nt [A

]

100

VDS, Drain-Source Voltage [V]

4 1010-1

100

101

150oC

25oC-55oC

※ Notes :1. VDS = 50V2. 250μ s Pulse Test

I D, D

rain

Curre

nt [A

]

6 8

VGS, Gate-Source Voltage [V]

10-1 1010

200

400

600

800Ciss = Cgs + Cgd (Cds = shorted)

Cgd

dsC = C + CgdCrs

os

s

s =

※ Notes :1. VGS = 0 V2. f = 1 MHz

Crss

Coss

Ciss

Capa

citan

ce [p

F]

100




Typical Characteristics

(Continued)


Figure 9-1. Maximum Safe Operating Area Figure 10. Maximum Drain Currentvs Case Temperature

-100 -50 150 2000.8

0.9

1.0

1.1

1.2

※ Notes :1. VGS = 0 V2. ID = 250 μA

BVDS

S, (N

ormali

zed)

Drain

-Sou

rce Br

eakd

own V

oltag

e

0 50 100

TJ, Junction Temperature [oC]

-100 -50 150 2000.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Notes : 1. VGS = 10 V 2. ID = 1.5 A

R DS(

ON),

(Norm

alize

d)Dr

ain-S

ource

On-R

esist

ance

0 50 100

TJ, Junction Temperature [oC]

100 101 102 10310-2

10-1

100

101

100 msDC

10 ms1 ms

100 µs

Operation in This Area is Limited by R DS(on)

※ Notes :1. TC = 25 oC2. TJ = 150 oC3. Single Pulse

I D, D

r ain C

urren

t [A]

25 50 125 1500

1

2

3

4

I D, D

rain C

urren

t [A]

75 100

TC, Case Temperature []

Figure 7. Breakdown Voltage Variationvs Temperature

Figure 8. On-Resistance Variationvs Temperature

1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1

1 0 -2

1 0 -1

1 0 0

※ N o tes : 1 . Z

θ JC( t) = 11 .1 7 /W M a x .

* Z1 2 . D u ty F a c to r, D = t /t2

3 . T JM - T C = P D M θ JC ( t)

s in g le p u ls e

D = 0 .5

0 .0 2

0 .2

0 .0 5

0 .1

0 .0 1

Z θJC(t

), T

h erm

al R

espo

nse

t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11-1. Transient Thermal Response Curve

t1

PDM

t2



Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

ChChaarrggee

VVGSGS

1010VVQQgg

QQgsgs QQgdgd

3mA3mA

VVGSGS

DUTDUT

VVDSDS

300300nFnF

5050KKΩΩ

200nF200nF

SamSamee Ty Typepeaass DUT DUT

VVGSGS

VVDSDS

10%10%

90%90%

ttd(d(onon)) ttrr

tt onon tt ofofff

ttd(d(ofofff)) ttff

VVDDDD

VVDSDSRRLL

DUTDUT

RRGG

VVGSGS

===EEEASASAS ----21212121------------ LLL ASASASIII

BVBVDSDSSS222 ----------------------------------------

BVBVDSDSSS - V- VDDDD

VVDDDD

VVDSDS

BVBVDSDSSS

t t pp

VVDDDD

IIASAS

VVDSDS (t(t))

IID D (t(t))

TiTimmee

DUTDUT

RRGG

LLL

III DDD

t t pp



Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUTDUT

VVDSDS

++

__

DriDrivveerrRRGG

SaSammee Ty Typpee as Das DUUTT

VVGSGS •• ddvv//dtdt cocontntrolrollleedd b byy RRGG

•• IISDSD ccoonnttrroolllleed byd by ppuullssee peperriiodod

VVDDDD

LLLII SDSD

1010VVVVGSGS

(( D Drriiverver ) )

II SDSD

( DUT )( DUT )

VVDSDS

( DUT )( DUT )

VVDDDD

BBoodydy D DiiododeeFFoorrwwaarrd Vd Voollttagage e DDrropop

VVSDSD

IIFMFM ,, B Boody Didy Diodode e ForwForwardard CurrenCurrentt

IIRMRM

BBoodydy D Diiodode Re Reeverversse e CCuurrrrenentt

BBoodydy D Diiodode Re Reeccooververyy ddvv//ddtt

didi//ddtt

D =D =D = ---------GaGaGattteee------------------------ P P Puuulllsss------------------------e e e WWW---iiiddd------------ttthhhGaGaGattteee P P Puuulllssse Pe Pe Peeeriririododod

--- ---



Package Dimension

TO-251

Units：mm



Package Dimension

Units：mm

TO-252



Declaration

Any semiconductor product under certain conditions has the possibility of failure or failure,The buyer has theresponsibility to comply with safety

standards and take safety measures when using FIRST products for system design and manufacturing,To avoid To avoid potential failure risks, which may cause personal injury or property damage!Product promotion endless, our company will wholeheartedly provide customers with better products!

ATTACHMENT

Revision History

Date REV Description Page

2018.01.01 1.0 Initial release


FIRST reserves the right to change the specifications, the same specifications of products due to different packaging line mold, the size of the appearance will be slightly different, shipped in kind, without notice!

Customers should obtain the latest version information before ordering, and verify whether the relevant

information is complete and up-to-date.


bvdss= d to gfile2.dzsc.com/product/18/06/09/1127976_153924774.pdf · d i d=250μa,v ds=v gs 3-5 v...

Documents