can we prepare organic materials for 2.1 d next generation...

1

copy Hitachi Chemical Co Ltd 2014 All rights reservedcopy Hitachi Chemical Co Ltd 2010 All rights reserved

Can we prepare organic materials for 21 D next generation interposers

Hitachi Chemical Co LtdTsukuba Research Laboratory

Telecommunication Materials Development Center

Hikari Murai

2

copy Hitachi Chemical Co Ltd 2014 All rights reserved

Contents

1 Trends and road map of new generation PKG2 Required properties of 21D interposer3 Ultra low CTE core laminates4 Fine pattern formation technology

4-1 Flat surface and high adhesive primer4-2 Nano fractal treatment of copper surface4-3 Low loss laminates

5 Conclusion

3


P-BGA

Redistributed chip PKG

Coreless PKG

WL-CSPFC-DDR

Flip Chip BGA

BOC

PoP Embedded

Stacked CSPTSV PKG

Chip on chip PKG

FC mounting

Multi chip mounting

High performance mounting

Solder resist tech

Under fill techSubstrate tech

Build-up tech

Buffer coating tech

Die bonding paste tech EMC tech

Die bonding film tech

COFRFID

Sensor

LED

Solar battery Consumer equip

Auto mobilePhoto sensitive film tech

Trend of Advanced PKG

QFP


Year 2014 15 2016 17 2018

FCCSPfor Smartphone Tablet

Technology node PKG height [mm]

Die size [mm]Die thickness [μm]Cu pillar Pitch [μm]

Work sizeMolding methodology

Molding material

20nm0605-157050

Strip sizeTransfer

TabletGranule

16nm0555-156040

PNL300mmCompressionGranulesheet

10nm0555-156040

PNL 400mmCompLami

Sheet

lt 10nm0505-155035

PNL600mmCompLami

Sheet

lt 10nm0505-155035

PNL600mmCompLami

Sheet

Core material

Solder resist

Molding material

CUFNCF

E-705G 770G2-5ppmC

FZ-2700GA

MUFCEL-1800HF

CEL-3730 Series

E-770G

FZ SR-F

MUF EBIS

NCF

New type0-3ppmC

FZ SR-F

EBISNew type

Photo NCF

PKG Trend amp Roadmap of Hitachi Materials4

Low CTE Substrate ( E-770G(LH) )

Keywords- Low cost - High density fine pitch- Low warpage amp high reliabilities

Narrow pitch available

Ultra low CTE

productivity

High reliabilities

Fine-pitch available

MUF ( Tablet Granule )

Sheet MUF ( EBIS )

Sheet MUF ( Fine pitch)

Materials


Year 2014 15 2016 17 2018

FOWLPfor Smartphone Tablet


Die size [mm]Die thickness [μm]

Ball Pitch [μm]Work size

Molding methodologyMolding material

20nm0455-10040040

12inchCompression

LiquidGranule

16nm0405-10035040

12inchCompressionGranulesheet

10nm0405-10035035

PNL 400mmCompLami

Sheet

lt 10nm0355-10030035

PNL600mmCompLami

Sheet

lt 10nm0355-10030030

PNL600mmCompLami

Sheet

RDL (Liquid)RDL (Film)

Temporary bond film

Molding material

HD-8930DIF

New type

CompCEL-1800HF

HD-8940DIF

CompEBIS

HD-8940New type

CompLamiNew type



Narrow pitch availableproductivity

High reliabilitiesMaterials

High resolution amp reliabilities

Die

Temporary bond filmMolding material

( LiquidGranule )

RDL ( HDDIF )

12inch

PNL400mmSheet ( EBIS )

PNL600mmSheet ( Fine pitch)

New type DIF3D-FOWLP


Year 2014 15 2016 17 2018

21 25 3D-PKGfor PC Server

Technology node ]Die size [mm]]Ball Pitch [μm]

Gap between Die amp SubLS [μm]

SR thickness [μm]SRO

Anti-TCT

20nm2512030

9-141870

2000cyc

16nm2810030

5-121560

2000cyc

10nm308030

5-121560

3000cyc

lt 10nm306020

3-101250

3000cyc

lt 10nm306020

3-101250

3000cyc

RDL (Film)

Buildup Air foilNFT

Glass film

UF material

DIF

55-33μm

10050μmt

CUFNCF

DIF

22μm

10050μmt

CUFNCF

DIF

11μm

10050μmt

Photo NCF


Keywords- High electrical performance- High density fine pitch- Low warpage amp high reliabilities


Low warpage

MaterialsHigh resolution amp reliabilities

25D-PKG 3D-PKG

Si-IP

High process-abilityFine-pitch available

Low CTE amp Low tan ( Df )

Lid

Extremely low CTE substrate

High density wiring layers21D-PKG

DieCUF

Si-IP25D-PKG

TSV3D-PKG

7


POP

25D-PKG

3D-PKG

eWLB

3D-eWLB

Si-IP

QFN

Integrated technology for newly PKG

Needs Ultra Low CTE

High themal conduction

LowεLow tanδ

High modulus

High adherence

Low warpage

Reliability

High radiation of heat

Electric performance

FC-BGA

Low End Middle range High End

Needs

Ultra fine line Low cost High speedBig volume

Integrated technology

Adherence Insulation Photosensitive

Process Evaluation

Low

Per

form

ance

hi

gh

New processmaterial Proposalfor harmonized field

8


Contents



5 Conclusion

9


Pre-applied under Fill CEL-C UF series

3D PKG

25D PKG Good gap filling

Good connection Short cure bonding

Temporary bonding film XTM series

Easy debonding Heat resistance

Low warpage High insulation

Low CTE Substrate MCL AS seriesHigh Tg Solder resist SRFZ series

Fine patterning

Good molding

CMP HS series High removal rate Good planarity

High resolution TrenchPhoto-via

TSV Related Materials

Underfill CEL-C series

High thermal Good adhesion

Thermally conductive film HS series

Materials for Fine Pattering

EMC CEL seriesEMC film EB series

High resolutionDry film resist for Cu pillar

RDL DIF series

10


Extremely low CTE Higher ModulusHigh heat resistanceLower shrinkageGood process abilityGood reliability

High density wiring layers

21D-PKG

Low Warpage reflowafter reflow

Very fine line formation Good filling propertySmaller via diameterExcellent reliability Low Df propertyGood warpage (with prepreg)

Required properties of 21D interposer

copy Hitachi Chemical Co Ltd 20１４ All rights reserved

11

LS=33μm Ultra fine line

High resolution Photosensitive Film RYRD series

Ultra fine pitch primer AirFoil （flat surface）

Ultra Low CTE LaminateE-770G Mary(next generation)

Thinner seed copperNewly Copper treatment NFT（Nano copper treat）

Integrated Technology

12


Contents



5 Conclusion


13

Year

2005 2010 2015

CTE

ppm

ordmC

15

10

5

0

E-700G（R)

E-705G(L)

E-705G(LH)

E-679GT

E-679FG E glass S glass S HD glass Q glassOrganic

gt35GPa gt50GPagt50GPa

20142013

E-800G(L)

Ultra Low CTE Core Materials

E-770G(LH)

14


Scharpery formula (Approximate formula of CTE)

Molecular design of new resin systemCTE formula for ultra low CTE material

CTE(material)≒ErVr + EgVg + EfVf

arErVr + agEgVg + afEfVf

- Er rArr 0

- arrArr 0

- Vr rArr 0 CTE(material) rArr CTE(Glass cloth) + CTE(Filler)

Low CTE resinLow CTE resin

Close packing of low CTE filler Low CTE glassClose packing of low CTE filler Low CTE glass

Low elastic modulus Low elastic modulus

a CTEV Volume ratioE Modulusr Resing Glass clothf Filler

CTE(material) rArr Smaller


15

The relationship between Resin shrinkage and Warpage (PKG)

Decreasing of resin shrinkageWarpage reduction

Warpage reduced by decreasing of resin shrinkage even in same CTE value

Substrate

Die mount

（RT260oCRT）

After mount

0

20

40

6080

020 025 030 035 040Resin shrinkage（）

War

page

(PK

G) (

mm

)

(33)(34)

(35)(33)

( )CTE (ppm

Study of Resin shrinkage

16


Hard segment (New rigid matrix)

Soft segment (New low elastic matrix)

3 Molecular design of new resin system(4)Molecular design of new resin

Ultra low CTELow shrinkageUltra low CTELow shrinkage

Ultra low CTELow elastic modulus Ultra low CTELow elastic modulus

17


Deterioration in properties- Water absorption- Heat resistance- Electrical insulation- CAF restraining property


Aggregation

Filler

Original coupling agentGood dispersion (no aggregation)

FICS

Low CTEImprovement in properties


Poor dispersion of fillerEnabling higher filler content

3 Molecular design of new resin system(5)Close packing of filler

Conventional

18


High Density Glass cloth3 Core Prepreg Portfolio

2116 ( 100m standard type)Fabric count 59 x 57 inch

2118 ( 100m HD type)Fabric count 65 x 62 inch

19


4 General properties of new ultra low CTE material(2)General properties

20


30 oC 270 oC

Shrinkage

Heating

Cooling

Temperature

Dim

ensi

on C

hang

e

30 oC 260 oC 260 oC 30 oC

Heating process Cooling process

5 Influence of resin shrinkage(1)The relationship between the warpage and the shrinkage

Assembly process

WarpageWarpageTMA mesurment of core material

The Mismatch of CTE between core material and chipin the cooling process


21


5 Influence of resin shrinkage(2)Measurement result of the shrinkage

Resin shrinkage ()

Cor

e sh

rinka

ge (

)

Core shrinkage ()

CTE

inco

olin

g pr

oces

s(pp

mo C

)The decreasing of resin shrinkage effectively lowers the core shrinkageThe decreasing of resin shrinkage effectively lowers the core shrinkage

The decreasing of core shrinkage bring the ultra low CTEin the cooling processThe decreasing of core shrinkage bring the ultra low CTEin the cooling process

CTE of 18 ppmoCin heating process

The relationship between the shrinkage of resin and coreThe relationship between the shrinkage of resin and core

The relationship between the CTEin cooling process and core shrinkageThe relationship between the CTEin cooling process and core shrinkage

22


6 Warpage property of thinner PKG substrate(1) Overview and cross-section of the PKG structure (4-layer)

Package size 14 x 14 mmChip size 73 x 73 mmChip thickness 150 mUnderfill thickness 60 m

Core thickness 200 μmPrepreg thickness 40 μmCu thickness 12 m (60 island)Cu layer 1-2-1Solder resist thickness 20 m

Underfill

Chip

substrate

Overview Cross section

Chip

Underfill

Bump

Solder resist

Cu

CuCore

Prepreg

Dimensions

23


Shadow-moire measurement system

Temperature25 oC 260 oC 600 s260 oC 25 oC 1800 s

Camera

Chamber

Reference grating

Light Analyzer

ChipSubstrate

Shadow moire image(Interference pattern)

Imageanalysis

Analysis result

6 Warpage property of thinner PKG substrate(2) Measurement method (Shadow-Moire method)

Overview of Shadow-Moire measurement system

24


6 Warpage property of thinner PKG substrate(3) Measurement result of warpage

Measurement result of PKG substrate(Ball area warpage)

Lowest warpage

25


Warpage Evaluation

Underfill

Chip

substrate

Package size 45x45 mmChip size 20x20 mmChip thickness 775 mUnderfill thickness 60 m ltSamplegt Core Thickness 400m with 12m copper

MCL-E-770G MCL-E-705G MCL-E-700G(R)

Warpage mode

Convex

Concave

Room Temp(Start)

Reflow Temp

Room Temp(after reflow)

As the results of 400m Core warpage evaluationE-770G has lower warpage than E-705G in reflow temp

26


Contents



5 Conclusion


Air Foil


28

PF Profile-free Cu Foil with resin (Hitachi-chemical)

LP Low Profile Cu Foil

Conventionalfilm

LS (microm)

PF-E-12SAPP (Primer)

Conventional LP Cu foil

404035353030252520201515101055

100microm100microm100microm

SAP

01

02

03

04

05

06 M-SAP Subtra

PF-E series (Priner)PF-E-3

PF-EL series (Primer)PF-EL-3 PF-EL-12 PF-EL-3 R

a (micro

m)

Air Foil (Primer)

Fine line fabrication of glass-cloth prepreg


29

Item Glass-cloth prepreg Insulating film

Low CTE good poor

Low warpage good poor

High density wiring(by semi-additive process) difficult possible

Combination of semi-additive process and glass-cloth prepreg is necessary to achieve high density and low warpage

Advantage of applying glass-cloth prepreg for Build up material

Advantage of applying glass-cloth prepreg


30Product formation of Airfoil

Carrier film (Organic film)

Prepreg

Core

For multilayer

Airfoil

Primer

Conventional core material

For core material

Airfoil is provided by coating primer resin on carrier filmIt can be used for conventional core material and multilayer PWB with prepreg


31

PrepregCore

Semi-AdditiveProcess

X functional group of interaction with Cu

Higher peel strength on smooth surface

Application Core Prepreg Film

XX XX X Plated copperPrimer

XX XX X

[High adhesive energy material](Chemical bonding)

Primer

Technology concept of Airfoil


32

Peel strength Surface roughness

Sweller80 ordmC5 min Micro-etching80 ordmC10 minDesmear system Atotech

Peel strength of Air Foil

Air Foil is available for various resin system prepregsmaintaininglow surface roughness and higher peel strength properties

0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33

Item Unit Airfoil PF-ELPrimer

Thickness microm 25 2 or 38

Carrier -

Organic Film LP copper

SurfaceFormation

Method

-

Desmearing Replica of copper

Ra microm 005-008 030-040

Peel kNm 07-08 07-09

LS microm lt 55 1010

Laser formability - excellent good

Airfoil properties and spec

10 μm 10 μm

10 μm 10 μm


34Surface flatness of Airfoil

Carrier Non profile copper foil Carrier Organic film

Airfoil (film carrier) can reduce uneven of surface

EquipmentWyko NT9100

Waves from copper foil Unevenness of surface increases

Surface roughness of Airfoil on substrate after carrier removal

Ra = 002-005 micromRa = 01-02 microm


35

Item Airfoil PF-EL

Ra (microm) 009 038

Peel strength(kNm) 076 079

Surface image(After desmear)

Cross-sectionimage

(After plating)

Prepreg E-700G(R)Swelling 80 ordmC 5 min Desmear 80 ordmC 15 min

Surface roughness of the Airfoil after desmear is lt 01 microm

5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil

Surface roughness and plating property

Resistance of seed layer

E-700G(R) + Airfoil

86 mmwidth

200 μm

Desmear rarr Eless-plating

PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method

Adhesive property of pattern plating copper

Res

ista

nce

(Ω)

Thickness of seed layer (μm)

Airfoil shows good adhesive property of pattern plating copper

AirFoil is available for thin seed layer less than 02um

Current Film material

Air Foil

Material Seed layer007μm Seed layer014μm

Electroless copper (seed layer) fixing property

20μm


38

Design Surface photograph Cross section

73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm

DFR formation with Airfoil

3 μm width of DFR line on the E-less copper is successfully fabricated

Resist formability of Airfoil with E-700G(R)

DFR RY-5319 (Thickness 19 μm Hitachi Chemical Co Ltd)DFR pre-treatment NFT (Hitachi Chemical Co Ltd)Exposure EXM-1201 (ORC Manufacturing Co Ltd) with 405 nm

sharpcut filter 100 mJcm2

Development 1 Na2CO3 30 ordmC 18 s


39

Surface photograph

Prepreg

Core Airfoil50 microm 50 microm

Airfoil

Electro-less plating system AtotechElectro-less plating conditionElectro-less plating 03 micromElectro plating 8 μm

Desmear system Atotech Desmear condition Swelling 80 ordmC10 min Micro-etching 80 ordmC15 minNeutralizing 40 ordmC 5 minDFR RY 5319

Fine circuit formation with Airfoil

Grass-cloth prepreg with Airfoil can be applicable to the wiring of 10 microm

Fine line formability of Airfoil with E-700G(R) (LS=5 μm5 μm)

Cross section


40HAST results with SR (FZ-2700GA)

FZ-2700GA (thickness 20 μm Hitachi Chemical Co Ltd)

Core MCL-E-700G(R) Condition 130 ordmC 85 RH 5V

Linespace = 55 microm Line thickness5 micromAirfoil

Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)

Hast test with SR (FZ-2700GA) shows good results

LS=55 μm

evaluation still ongoing up to 300hr

41

Transmission loss in micro strip-line structurewith fine patterning material

＜ Measurement Conditions ＞ Transmission structure Micro strip-line Temperature amp Humidity 25 40 RH Characteristic impedance 50 Ω Proofreading method TRL Dimension parametersTrace width 0068～0082 mmTrace thickness 20 μmDielectric thickness 40 μm

Copper foil or Plating Cu

Pattern for Proofreading

Pattern for S21

Prepreg (GEA-700G(R)) w or wo primer

Core(E-700G(R))

Transmission linefor measurement

Fine pattern formation materials are effective in reducing the transmission loss (conductor loss)

Standard foil

PF-EL-12SAPP

Airfoil


New copper surface treatment technology For next generation package substrates

NFT Nano Fractal Treatment

Application of NFT

copy Hitachi Chemical Co Ltd 2014 All rights reserved 43

Package substrate

NFT has the high-resolution of the DFR and high adhesion of the wiring

Core

Build-up material

Solder resist (SR)

Multilayer board

NFT

Inner layer Resinrarr Inner layer treatments

Chemical treatment(Etching)

Black-oxide treatment

Cu layer(DFR Seed- layer)


CuO

Cu

Oxidation

Precious metal

Dissolution of CuO (acid treatment)This step microscopic indentation is formed

Dry treatment

Activation

This step thin CuO film is formed

1 Very flat-surface copper2 Adhesion for DFR is excellent3 The precision of the fine pattern is good4 Adhesion between build-up material and solder resist is good

Features amp Process flow of NFT

Conventional treatment New treatment

Etching Oxi-Red NFT

Characteristic of NFT


10 μm

SEM image (times5K times100K)1) Surface shape of copper

The surface of NFT is very flat shape


Etching(20 - 30 μm)

Oxi-Red(05 - 07 μm)

NFT(004 - 006 μm)



1 μm

SIM image used with FIB (45ordm)

(Surface roughness Rz)

2) Cross-section of copper

NFT of surface roughness (Rz) is less than 01 um

Formation of seed layer

Thickness of seed layer is 05 μm

AS-Z3Air Foil

DFR RY5319 46

9

5

8

Etching of seed layer

Cu

19(Unit μm)


Pattern formation of DFR

(Unit μm)

Pattern plating

Wiring formation example of 55um

The precision of the fine pattern is good

(Unit μm)

Item AS-Z3 AirfoilRa (μm) 015 008

Surface

Cross-section(FIB)

Width height(μm) 4785 5797

50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm

Ultra Fine Line formation


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



Ultra Low Loss(Df) material- MCL-LW-900G -

51


Item ConditionsE-705G E-770G LW-900G

705G 705G(LH) 770G 770G(LH) 900G 900G(LH)

PrepregGlass Style 1037 1030 1037 1030 1037 1030

Resin Content() 73 69 72 67 72 65

Glass typeGlass type E-glass S-glass E-glass S-glass E-glass S-glass

Weave density Std HD Std HD Std HD

Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260

CTE (pull) a1 (XY)ppmC

110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20

Young Modulus A GPa 220 241 219 233 124 165

Hitachi Low DkDf PrepregPPG thickness 50m

52


Cavity resonator perturbationStrip-line resonatorCut-off circular waveguideWhispering-gallery mode(WG)

30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)


LW-900G(LH) Prepreg (1030N65S-Glass)

Hitachi Low DkDf PPG


5Conclusion

1 According with demands of big data and high speedcommunication there become high IO numbers inone chip regarding higher accumulated PKG21D interposer is paid attention to cheaper generalPKG

2 We have developed E-770G laminate material whichhas low CTE property (18ppmdegC TMA) and lowershrinkage property actually our assembly test indicatedlower warpage compared with current low CTE material

3 We tried to make fine line on organic material after that we success to make LS=55um to use primer technology (Air Foil) with new copper surface treatment (NFT)

54


Thank you for your attentionThank you for your attention

The entry contents of these data based on the results of our experiment done until Jan 2014 do not guarantee their characteristic values The contents may be revised according to new findings if necessary Please examine the process and the condition carefully and confirm before mass production

2


Contents



5 Conclusion

3


P-BGA


Coreless PKG

WL-CSPFC-DDR

Flip Chip BGA

BOC

PoP Embedded

Stacked CSPTSV PKG

Chip on chip PKG

FC mounting

Multi chip mounting


Solder resist tech


Build-up tech

Buffer coating tech



COFRFID

Sensor

LED




QFP


Year 2014 15 2016 17 2018





Molding material

20nm0605-157050

Strip sizeTransfer

TabletGranule

16nm0555-156040


10nm0555-156040

PNL 400mmCompLami

Sheet

lt 10nm0505-155035

PNL600mmCompLami

Sheet

lt 10nm0505-155035

PNL600mmCompLami

Sheet

Core material

Solder resist

Molding material

CUFNCF

E-705G 770G2-5ppmC

FZ-2700GA

MUFCEL-1800HF

CEL-3730 Series

E-770G

FZ SR-F

MUF EBIS

NCF

New type0-3ppmC

FZ SR-F

EBISNew type

Photo NCF





Ultra low CTE

productivity

High reliabilities



Sheet MUF ( EBIS )


Materials


Year 2014 15 2016 17 2018






20nm0455-10040040

12inchCompression

LiquidGranule

16nm0405-10035040


10nm0405-10035035

PNL 400mmCompLami

Sheet

lt 10nm0355-10030035

PNL600mmCompLami

Sheet

lt 10nm0355-10030030

PNL600mmCompLami

Sheet


Temporary bond film

Molding material

HD-8930DIF

New type

CompCEL-1800HF

HD-8940DIF

CompEBIS

HD-8940New type

CompLamiNew type






Die


( LiquidGranule )

RDL ( HDDIF )

12inch





Year 2014 15 2016 17 2018





Anti-TCT

20nm2512030

9-141870

2000cyc

16nm2810030

5-121560

2000cyc

10nm308030

5-121560

3000cyc

lt 10nm306020

3-101250

3000cyc

lt 10nm306020

3-101250

3000cyc

RDL (Film)

Buildup Air foilNFT

Glass film

UF material

DIF

55-33μm

10050μmt

CUFNCF

DIF

22μm

10050μmt

CUFNCF

DIF

11μm

10050μmt

Photo NCF




Low warpage


25D-PKG 3D-PKG

Si-IP



Lid



DieCUF

Si-IP25D-PKG

TSV3D-PKG

7


POP

25D-PKG

3D-PKG

eWLB

3D-eWLB

Si-IP

QFN


Needs Ultra Low CTE


LowεLow tanδ

High modulus

High adherence

Low warpage

Reliability



FC-BGA


Needs




Process Evaluation

Low

Per

form

ance

hi

gh


8


Contents



5 Conclusion

9



3D PKG







Fine patterning

Good molding










RDL DIF series

10




21D-PKG





11







12


Contents



5 Conclusion


13

Year

2005 2010 2015

CTE

ppm

ordmC

15

10

5

0

E-700G（R)

E-705G(L)

E-705G(LH)

E-679GT



20142013

E-800G(L)


E-770G(LH)

14






- Er rArr 0

- arrArr 0








15




Substrate

Die mount

（RT260oCRT）

After mount

0

20

40

6080

020 025 030 035 040Resin shrinkage（）

War

page

(PK

G) (

mm

)

(33)(34)

(35)(33)

( )CTE (ppm


16







17




Aggregation

Filler


FICS





Conventional

18





19



20


30 oC 270 oC

Shrinkage

Heating

Cooling

Temperature

Dim

ensi

on C

hang

e

30 oC 260 oC 260 oC 30 oC



Assembly process




21



Resin shrinkage ()

Cor

e sh

rinka

ge (

)

Core shrinkage ()

CTE

inco

olin

g pr

oces

s(pp

mo C






22





Underfill

Chip

substrate


Chip

Underfill

Bump

Solder resist

Cu

CuCore

Prepreg

Dimensions

23




Camera

Chamber

Reference grating

Light Analyzer

ChipSubstrate


Imageanalysis

Analysis result



24




Lowest warpage

25


Warpage Evaluation

Underfill

Chip

substrate



Warpage mode

Convex

Concave

Room Temp(Start)

Reflow Temp



26


Contents



5 Conclusion


Air Foil


28



Conventionalfilm

LS (microm)



404035353030252520201515101055


SAP

01

02

03

04

05

06 M-SAP Subtra



a (micro

m)

Air Foil (Primer)



29


Low CTE good poor









Prepreg

Core

For multilayer

Airfoil

Primer


For core material



31

PrepregCore






XX XX X


Primer



32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54




3


P-BGA


Coreless PKG

WL-CSPFC-DDR

Flip Chip BGA

BOC

PoP Embedded

Stacked CSPTSV PKG

Chip on chip PKG

FC mounting

Multi chip mounting


Solder resist tech


Build-up tech

Buffer coating tech



COFRFID

Sensor

LED




QFP


Year 2014 15 2016 17 2018





Molding material

20nm0605-157050

Strip sizeTransfer

TabletGranule

16nm0555-156040


10nm0555-156040

PNL 400mmCompLami

Sheet

lt 10nm0505-155035

PNL600mmCompLami

Sheet

lt 10nm0505-155035

PNL600mmCompLami

Sheet

Core material

Solder resist

Molding material

CUFNCF

E-705G 770G2-5ppmC

FZ-2700GA

MUFCEL-1800HF

CEL-3730 Series

E-770G

FZ SR-F

MUF EBIS

NCF

New type0-3ppmC

FZ SR-F

EBISNew type

Photo NCF





Ultra low CTE

productivity

High reliabilities



Sheet MUF ( EBIS )


Materials


Year 2014 15 2016 17 2018






20nm0455-10040040

12inchCompression

LiquidGranule

16nm0405-10035040


10nm0405-10035035

PNL 400mmCompLami

Sheet

lt 10nm0355-10030035

PNL600mmCompLami

Sheet

lt 10nm0355-10030030

PNL600mmCompLami

Sheet


Temporary bond film

Molding material

HD-8930DIF

New type

CompCEL-1800HF

HD-8940DIF

CompEBIS

HD-8940New type

CompLamiNew type






Die


( LiquidGranule )

RDL ( HDDIF )

12inch





Year 2014 15 2016 17 2018





Anti-TCT

20nm2512030

9-141870

2000cyc

16nm2810030

5-121560

2000cyc

10nm308030

5-121560

3000cyc

lt 10nm306020

3-101250

3000cyc

lt 10nm306020

3-101250

3000cyc

RDL (Film)

Buildup Air foilNFT

Glass film

UF material

DIF

55-33μm

10050μmt

CUFNCF

DIF

22μm

10050μmt

CUFNCF

DIF

11μm

10050μmt

Photo NCF




Low warpage


25D-PKG 3D-PKG

Si-IP



Lid



DieCUF

Si-IP25D-PKG

TSV3D-PKG

7


POP

25D-PKG

3D-PKG

eWLB

3D-eWLB

Si-IP

QFN


Needs Ultra Low CTE


LowεLow tanδ

High modulus

High adherence

Low warpage

Reliability



FC-BGA


Needs




Process Evaluation

Low

Per

form

ance

hi

gh


8


Contents



5 Conclusion

9



3D PKG







Fine patterning

Good molding










RDL DIF series

10




21D-PKG





11







12


Contents



5 Conclusion


13

Year

2005 2010 2015

CTE

ppm

ordmC

15

10

5

0

E-700G（R)

E-705G(L)

E-705G(LH)

E-679GT



20142013

E-800G(L)


E-770G(LH)

14






- Er rArr 0

- arrArr 0








15




Substrate

Die mount

（RT260oCRT）

After mount

0

20

40

6080

020 025 030 035 040Resin shrinkage（）

War

page

(PK

G) (

mm

)

(33)(34)

(35)(33)

( )CTE (ppm


16







17




Aggregation

Filler


FICS





Conventional

18





19



20


30 oC 270 oC

Shrinkage

Heating

Cooling

Temperature

Dim

ensi

on C

hang

e

30 oC 260 oC 260 oC 30 oC



Assembly process




21



Resin shrinkage ()

Cor

e sh

rinka

ge (

)

Core shrinkage ()

CTE

inco

olin

g pr

oces

s(pp

mo C






22





Underfill

Chip

substrate


Chip

Underfill

Bump

Solder resist

Cu

CuCore

Prepreg

Dimensions

23




Camera

Chamber

Reference grating

Light Analyzer

ChipSubstrate


Imageanalysis

Analysis result



24




Lowest warpage

25


Warpage Evaluation

Underfill

Chip

substrate



Warpage mode

Convex

Concave

Room Temp(Start)

Reflow Temp



26


Contents



5 Conclusion


Air Foil


28



Conventionalfilm

LS (microm)



404035353030252520201515101055


SAP

01

02

03

04

05

06 M-SAP Subtra



a (micro

m)

Air Foil (Primer)



29


Low CTE good poor









Prepreg

Core

For multilayer

Airfoil

Primer


For core material



31

PrepregCore






XX XX X


Primer



32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54





Year 2014 15 2016 17 2018





Molding material

20nm0605-157050

Strip sizeTransfer

TabletGranule

16nm0555-156040


10nm0555-156040

PNL 400mmCompLami

Sheet

lt 10nm0505-155035

PNL600mmCompLami

Sheet

lt 10nm0505-155035

PNL600mmCompLami

Sheet

Core material

Solder resist

Molding material

CUFNCF

E-705G 770G2-5ppmC

FZ-2700GA

MUFCEL-1800HF

CEL-3730 Series

E-770G

FZ SR-F

MUF EBIS

NCF

New type0-3ppmC

FZ SR-F

EBISNew type

Photo NCF





Ultra low CTE

productivity

High reliabilities



Sheet MUF ( EBIS )


Materials


Year 2014 15 2016 17 2018






20nm0455-10040040

12inchCompression

LiquidGranule

16nm0405-10035040


10nm0405-10035035

PNL 400mmCompLami

Sheet

lt 10nm0355-10030035

PNL600mmCompLami

Sheet

lt 10nm0355-10030030

PNL600mmCompLami

Sheet


Temporary bond film

Molding material

HD-8930DIF

New type

CompCEL-1800HF

HD-8940DIF

CompEBIS

HD-8940New type

CompLamiNew type






Die


( LiquidGranule )

RDL ( HDDIF )

12inch





Year 2014 15 2016 17 2018





Anti-TCT

20nm2512030

9-141870

2000cyc

16nm2810030

5-121560

2000cyc

10nm308030

5-121560

3000cyc

lt 10nm306020

3-101250

3000cyc

lt 10nm306020

3-101250

3000cyc

RDL (Film)

Buildup Air foilNFT

Glass film

UF material

DIF

55-33μm

10050μmt

CUFNCF

DIF

22μm

10050μmt

CUFNCF

DIF

11μm

10050μmt

Photo NCF




Low warpage


25D-PKG 3D-PKG

Si-IP



Lid



DieCUF

Si-IP25D-PKG

TSV3D-PKG

7


POP

25D-PKG

3D-PKG

eWLB

3D-eWLB

Si-IP

QFN


Needs Ultra Low CTE


LowεLow tanδ

High modulus

High adherence

Low warpage

Reliability



FC-BGA


Needs




Process Evaluation

Low

Per

form

ance

hi

gh


8


Contents



5 Conclusion

9



3D PKG







Fine patterning

Good molding










RDL DIF series

10




21D-PKG





11







12


Contents



5 Conclusion


13

Year

2005 2010 2015

CTE

ppm

ordmC

15

10

5

0

E-700G（R)

E-705G(L)

E-705G(LH)

E-679GT



20142013

E-800G(L)


E-770G(LH)

14






- Er rArr 0

- arrArr 0








15




Substrate

Die mount

（RT260oCRT）

After mount

0

20

40

6080

020 025 030 035 040Resin shrinkage（）

War

page

(PK

G) (

mm

)

(33)(34)

(35)(33)

( )CTE (ppm


16







17




Aggregation

Filler


FICS





Conventional

18





19



20


30 oC 270 oC

Shrinkage

Heating

Cooling

Temperature

Dim

ensi

on C

hang

e

30 oC 260 oC 260 oC 30 oC



Assembly process




21



Resin shrinkage ()

Cor

e sh

rinka

ge (

)

Core shrinkage ()

CTE

inco

olin

g pr

oces

s(pp

mo C






22





Underfill

Chip

substrate


Chip

Underfill

Bump

Solder resist

Cu

CuCore

Prepreg

Dimensions

23




Camera

Chamber

Reference grating

Light Analyzer

ChipSubstrate


Imageanalysis

Analysis result



24




Lowest warpage

25


Warpage Evaluation

Underfill

Chip

substrate



Warpage mode

Convex

Concave

Room Temp(Start)

Reflow Temp



26


Contents



5 Conclusion


Air Foil


28



Conventionalfilm

LS (microm)



404035353030252520201515101055


SAP

01

02

03

04

05

06 M-SAP Subtra



a (micro

m)

Air Foil (Primer)



29


Low CTE good poor









Prepreg

Core

For multilayer

Airfoil

Primer


For core material



31

PrepregCore






XX XX X


Primer



32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54





Year 2014 15 2016 17 2018






20nm0455-10040040

12inchCompression

LiquidGranule

16nm0405-10035040


10nm0405-10035035

PNL 400mmCompLami

Sheet

lt 10nm0355-10030035

PNL600mmCompLami

Sheet

lt 10nm0355-10030030

PNL600mmCompLami

Sheet


Temporary bond film

Molding material

HD-8930DIF

New type

CompCEL-1800HF

HD-8940DIF

CompEBIS

HD-8940New type

CompLamiNew type






Die


( LiquidGranule )

RDL ( HDDIF )

12inch





Year 2014 15 2016 17 2018





Anti-TCT

20nm2512030

9-141870

2000cyc

16nm2810030

5-121560

2000cyc

10nm308030

5-121560

3000cyc

lt 10nm306020

3-101250

3000cyc

lt 10nm306020

3-101250

3000cyc

RDL (Film)

Buildup Air foilNFT

Glass film

UF material

DIF

55-33μm

10050μmt

CUFNCF

DIF

22μm

10050μmt

CUFNCF

DIF

11μm

10050μmt

Photo NCF




Low warpage


25D-PKG 3D-PKG

Si-IP



Lid



DieCUF

Si-IP25D-PKG

TSV3D-PKG

7


POP

25D-PKG

3D-PKG

eWLB

3D-eWLB

Si-IP

QFN


Needs Ultra Low CTE


LowεLow tanδ

High modulus

High adherence

Low warpage

Reliability



FC-BGA


Needs




Process Evaluation

Low

Per

form

ance

hi

gh


8


Contents



5 Conclusion

9



3D PKG







Fine patterning

Good molding










RDL DIF series

10




21D-PKG





11







12


Contents



5 Conclusion


13

Year

2005 2010 2015

CTE

ppm

ordmC

15

10

5

0

E-700G（R)

E-705G(L)

E-705G(LH)

E-679GT



20142013

E-800G(L)


E-770G(LH)

14






- Er rArr 0

- arrArr 0








15




Substrate

Die mount

（RT260oCRT）

After mount

0

20

40

6080

020 025 030 035 040Resin shrinkage（）

War

page

(PK

G) (

mm

)

(33)(34)

(35)(33)

( )CTE (ppm


16







17




Aggregation

Filler


FICS





Conventional

18





19



20


30 oC 270 oC

Shrinkage

Heating

Cooling

Temperature

Dim

ensi

on C

hang

e

30 oC 260 oC 260 oC 30 oC



Assembly process




21



Resin shrinkage ()

Cor

e sh

rinka

ge (

)

Core shrinkage ()

CTE

inco

olin

g pr

oces

s(pp

mo C






22





Underfill

Chip

substrate


Chip

Underfill

Bump

Solder resist

Cu

CuCore

Prepreg

Dimensions

23




Camera

Chamber

Reference grating

Light Analyzer

ChipSubstrate


Imageanalysis

Analysis result



24




Lowest warpage

25


Warpage Evaluation

Underfill

Chip

substrate



Warpage mode

Convex

Concave

Room Temp(Start)

Reflow Temp



26


Contents



5 Conclusion


Air Foil


28



Conventionalfilm

LS (microm)



404035353030252520201515101055


SAP

01

02

03

04

05

06 M-SAP Subtra



a (micro

m)

Air Foil (Primer)



29


Low CTE good poor









Prepreg

Core

For multilayer

Airfoil

Primer


For core material



31

PrepregCore






XX XX X


Primer



32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54





Year 2014 15 2016 17 2018





Anti-TCT

20nm2512030

9-141870

2000cyc

16nm2810030

5-121560

2000cyc

10nm308030

5-121560

3000cyc

lt 10nm306020

3-101250

3000cyc

lt 10nm306020

3-101250

3000cyc

RDL (Film)

Buildup Air foilNFT

Glass film

UF material

DIF

55-33μm

10050μmt

CUFNCF

DIF

22μm

10050μmt

CUFNCF

DIF

11μm

10050μmt

Photo NCF




Low warpage


25D-PKG 3D-PKG

Si-IP



Lid



DieCUF

Si-IP25D-PKG

TSV3D-PKG

7


POP

25D-PKG

3D-PKG

eWLB

3D-eWLB

Si-IP

QFN


Needs Ultra Low CTE


LowεLow tanδ

High modulus

High adherence

Low warpage

Reliability



FC-BGA


Needs




Process Evaluation

Low

Per

form

ance

hi

gh


8


Contents



5 Conclusion

9



3D PKG







Fine patterning

Good molding










RDL DIF series

10




21D-PKG





11







12


Contents



5 Conclusion


13

Year

2005 2010 2015

CTE

ppm

ordmC

15

10

5

0

E-700G（R)

E-705G(L)

E-705G(LH)

E-679GT



20142013

E-800G(L)


E-770G(LH)

14






- Er rArr 0

- arrArr 0








15




Substrate

Die mount

（RT260oCRT）

After mount

0

20

40

6080

020 025 030 035 040Resin shrinkage（）

War

page

(PK

G) (

mm

)

(33)(34)

(35)(33)

( )CTE (ppm


16







17




Aggregation

Filler


FICS





Conventional

18





19



20


30 oC 270 oC

Shrinkage

Heating

Cooling

Temperature

Dim

ensi

on C

hang

e

30 oC 260 oC 260 oC 30 oC



Assembly process




21



Resin shrinkage ()

Cor

e sh

rinka

ge (

)

Core shrinkage ()

CTE

inco

olin

g pr

oces

s(pp

mo C






22





Underfill

Chip

substrate


Chip

Underfill

Bump

Solder resist

Cu

CuCore

Prepreg

Dimensions

23




Camera

Chamber

Reference grating

Light Analyzer

ChipSubstrate


Imageanalysis

Analysis result



24




Lowest warpage

25


Warpage Evaluation

Underfill

Chip

substrate



Warpage mode

Convex

Concave

Room Temp(Start)

Reflow Temp



26


Contents



5 Conclusion


Air Foil


28



Conventionalfilm

LS (microm)



404035353030252520201515101055


SAP

01

02

03

04

05

06 M-SAP Subtra



a (micro

m)

Air Foil (Primer)



29


Low CTE good poor









Prepreg

Core

For multilayer

Airfoil

Primer


For core material



31

PrepregCore






XX XX X


Primer



32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54




7


POP

25D-PKG

3D-PKG

eWLB

3D-eWLB

Si-IP

QFN


Needs Ultra Low CTE


LowεLow tanδ

High modulus

High adherence

Low warpage

Reliability



FC-BGA


Needs




Process Evaluation

Low

Per

form

ance

hi

gh


8


Contents



5 Conclusion

9



3D PKG







Fine patterning

Good molding










RDL DIF series

10




21D-PKG





11







12


Contents



5 Conclusion


13

Year

2005 2010 2015

CTE

ppm

ordmC

15

10

5

0

E-700G（R)

E-705G(L)

E-705G(LH)

E-679GT



20142013

E-800G(L)


E-770G(LH)

14






- Er rArr 0

- arrArr 0








15




Substrate

Die mount

（RT260oCRT）

After mount

0

20

40

6080

020 025 030 035 040Resin shrinkage（）

War

page

(PK

G) (

mm

)

(33)(34)

(35)(33)

( )CTE (ppm


16







17




Aggregation

Filler


FICS





Conventional

18





19



20


30 oC 270 oC

Shrinkage

Heating

Cooling

Temperature

Dim

ensi

on C

hang

e

30 oC 260 oC 260 oC 30 oC



Assembly process




21



Resin shrinkage ()

Cor

e sh

rinka

ge (

)

Core shrinkage ()

CTE

inco

olin

g pr

oces

s(pp

mo C






22





Underfill

Chip

substrate


Chip

Underfill

Bump

Solder resist

Cu

CuCore

Prepreg

Dimensions

23




Camera

Chamber

Reference grating

Light Analyzer

ChipSubstrate


Imageanalysis

Analysis result



24




Lowest warpage

25


Warpage Evaluation

Underfill

Chip

substrate



Warpage mode

Convex

Concave

Room Temp(Start)

Reflow Temp



26


Contents



5 Conclusion


Air Foil


28



Conventionalfilm

LS (microm)



404035353030252520201515101055


SAP

01

02

03

04

05

06 M-SAP Subtra



a (micro

m)

Air Foil (Primer)



29


Low CTE good poor









Prepreg

Core

For multilayer

Airfoil

Primer


For core material



31

PrepregCore






XX XX X


Primer



32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54




8


Contents



5 Conclusion

9



3D PKG







Fine patterning

Good molding










RDL DIF series

10




21D-PKG





11







12


Contents



5 Conclusion


13

Year

2005 2010 2015

CTE

ppm

ordmC

15

10

5

0

E-700G（R)

E-705G(L)

E-705G(LH)

E-679GT



20142013

E-800G(L)


E-770G(LH)

14






- Er rArr 0

- arrArr 0








15




Substrate

Die mount

（RT260oCRT）

After mount

0

20

40

6080

020 025 030 035 040Resin shrinkage（）

War

page

(PK

G) (

mm

)

(33)(34)

(35)(33)

( )CTE (ppm


16







17




Aggregation

Filler


FICS





Conventional

18





19



20


30 oC 270 oC

Shrinkage

Heating

Cooling

Temperature

Dim

ensi

on C

hang

e

30 oC 260 oC 260 oC 30 oC



Assembly process




21



Resin shrinkage ()

Cor

e sh

rinka

ge (

)

Core shrinkage ()

CTE

inco

olin

g pr

oces

s(pp

mo C






22





Underfill

Chip

substrate


Chip

Underfill

Bump

Solder resist

Cu

CuCore

Prepreg

Dimensions

23




Camera

Chamber

Reference grating

Light Analyzer

ChipSubstrate


Imageanalysis

Analysis result



24




Lowest warpage

25


Warpage Evaluation

Underfill

Chip

substrate



Warpage mode

Convex

Concave

Room Temp(Start)

Reflow Temp



26


Contents



5 Conclusion


Air Foil


28



Conventionalfilm

LS (microm)



404035353030252520201515101055


SAP

01

02

03

04

05

06 M-SAP Subtra



a (micro

m)

Air Foil (Primer)



29


Low CTE good poor









Prepreg

Core

For multilayer

Airfoil

Primer


For core material



31

PrepregCore






XX XX X


Primer



32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54




9



3D PKG







Fine patterning

Good molding










RDL DIF series

10




21D-PKG





11







12


Contents



5 Conclusion


13

Year

2005 2010 2015

CTE

ppm

ordmC

15

10

5

0

E-700G（R)

E-705G(L)

E-705G(LH)

E-679GT



20142013

E-800G(L)


E-770G(LH)

14






- Er rArr 0

- arrArr 0








15




Substrate

Die mount

（RT260oCRT）

After mount

0

20

40

6080

020 025 030 035 040Resin shrinkage（）

War

page

(PK

G) (

mm

)

(33)(34)

(35)(33)

( )CTE (ppm


16







17




Aggregation

Filler


FICS





Conventional

18





19



20


30 oC 270 oC

Shrinkage

Heating

Cooling

Temperature

Dim

ensi

on C

hang

e

30 oC 260 oC 260 oC 30 oC



Assembly process




21



Resin shrinkage ()

Cor

e sh

rinka

ge (

)

Core shrinkage ()

CTE

inco

olin

g pr

oces

s(pp

mo C






22





Underfill

Chip

substrate


Chip

Underfill

Bump

Solder resist

Cu

CuCore

Prepreg

Dimensions

23




Camera

Chamber

Reference grating

Light Analyzer

ChipSubstrate


Imageanalysis

Analysis result



24




Lowest warpage

25


Warpage Evaluation

Underfill

Chip

substrate



Warpage mode

Convex

Concave

Room Temp(Start)

Reflow Temp



26


Contents



5 Conclusion


Air Foil


28



Conventionalfilm

LS (microm)



404035353030252520201515101055


SAP

01

02

03

04

05

06 M-SAP Subtra



a (micro

m)

Air Foil (Primer)



29


Low CTE good poor









Prepreg

Core

For multilayer

Airfoil

Primer


For core material



31

PrepregCore






XX XX X


Primer



32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54




10




21D-PKG





11







12


Contents



5 Conclusion


13

Year

2005 2010 2015

CTE

ppm

ordmC

15

10

5

0

E-700G（R)

E-705G(L)

E-705G(LH)

E-679GT



20142013

E-800G(L)


E-770G(LH)

14






- Er rArr 0

- arrArr 0








15




Substrate

Die mount

（RT260oCRT）

After mount

0

20

40

6080

020 025 030 035 040Resin shrinkage（）

War

page

(PK

G) (

mm

)

(33)(34)

(35)(33)

( )CTE (ppm


16







17




Aggregation

Filler


FICS





Conventional

18





19



20


30 oC 270 oC

Shrinkage

Heating

Cooling

Temperature

Dim

ensi

on C

hang

e

30 oC 260 oC 260 oC 30 oC



Assembly process




21



Resin shrinkage ()

Cor

e sh

rinka

ge (

)

Core shrinkage ()

CTE

inco

olin

g pr

oces

s(pp

mo C






22





Underfill

Chip

substrate


Chip

Underfill

Bump

Solder resist

Cu

CuCore

Prepreg

Dimensions

23




Camera

Chamber

Reference grating

Light Analyzer

ChipSubstrate


Imageanalysis

Analysis result



24




Lowest warpage

25


Warpage Evaluation

Underfill

Chip

substrate



Warpage mode

Convex

Concave

Room Temp(Start)

Reflow Temp



26


Contents



5 Conclusion


Air Foil


28



Conventionalfilm

LS (microm)



404035353030252520201515101055


SAP

01

02

03

04

05

06 M-SAP Subtra



a (micro

m)

Air Foil (Primer)



29


Low CTE good poor









Prepreg

Core

For multilayer

Airfoil

Primer


For core material



31

PrepregCore






XX XX X


Primer



32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54





11







12


Contents



5 Conclusion


13

Year

2005 2010 2015

CTE

ppm

ordmC

15

10

5

0

E-700G（R)

E-705G(L)

E-705G(LH)

E-679GT



20142013

E-800G(L)


E-770G(LH)

14






- Er rArr 0

- arrArr 0








15




Substrate

Die mount

（RT260oCRT）

After mount

0

20

40

6080

020 025 030 035 040Resin shrinkage（）

War

page

(PK

G) (

mm

)

(33)(34)

(35)(33)

( )CTE (ppm


16







17




Aggregation

Filler


FICS





Conventional

18





19



20


30 oC 270 oC

Shrinkage

Heating

Cooling

Temperature

Dim

ensi

on C

hang

e

30 oC 260 oC 260 oC 30 oC



Assembly process




21



Resin shrinkage ()

Cor

e sh

rinka

ge (

)

Core shrinkage ()

CTE

inco

olin

g pr

oces

s(pp

mo C






22





Underfill

Chip

substrate


Chip

Underfill

Bump

Solder resist

Cu

CuCore

Prepreg

Dimensions

23




Camera

Chamber

Reference grating

Light Analyzer

ChipSubstrate


Imageanalysis

Analysis result



24




Lowest warpage

25


Warpage Evaluation

Underfill

Chip

substrate



Warpage mode

Convex

Concave

Room Temp(Start)

Reflow Temp



26


Contents



5 Conclusion


Air Foil


28



Conventionalfilm

LS (microm)



404035353030252520201515101055


SAP

01

02

03

04

05

06 M-SAP Subtra



a (micro

m)

Air Foil (Primer)



29


Low CTE good poor









Prepreg

Core

For multilayer

Airfoil

Primer


For core material



31

PrepregCore






XX XX X


Primer



32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54




12


Contents



5 Conclusion


13

Year

2005 2010 2015

CTE

ppm

ordmC

15

10

5

0

E-700G（R)

E-705G(L)

E-705G(LH)

E-679GT



20142013

E-800G(L)


E-770G(LH)

14






- Er rArr 0

- arrArr 0








15




Substrate

Die mount

（RT260oCRT）

After mount

0

20

40

6080

020 025 030 035 040Resin shrinkage（）

War

page

(PK

G) (

mm

)

(33)(34)

(35)(33)

( )CTE (ppm


16







17




Aggregation

Filler


FICS





Conventional

18





19



20


30 oC 270 oC

Shrinkage

Heating

Cooling

Temperature

Dim

ensi

on C

hang

e

30 oC 260 oC 260 oC 30 oC



Assembly process




21



Resin shrinkage ()

Cor

e sh

rinka

ge (

)

Core shrinkage ()

CTE

inco

olin

g pr

oces

s(pp

mo C






22





Underfill

Chip

substrate


Chip

Underfill

Bump

Solder resist

Cu

CuCore

Prepreg

Dimensions

23




Camera

Chamber

Reference grating

Light Analyzer

ChipSubstrate


Imageanalysis

Analysis result



24




Lowest warpage

25


Warpage Evaluation

Underfill

Chip

substrate



Warpage mode

Convex

Concave

Room Temp(Start)

Reflow Temp



26


Contents



5 Conclusion


Air Foil


28



Conventionalfilm

LS (microm)



404035353030252520201515101055


SAP

01

02

03

04

05

06 M-SAP Subtra



a (micro

m)

Air Foil (Primer)



29


Low CTE good poor









Prepreg

Core

For multilayer

Airfoil

Primer


For core material



31

PrepregCore






XX XX X


Primer



32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54





13

Year

2005 2010 2015

CTE

ppm

ordmC

15

10

5

0

E-700G（R)

E-705G(L)

E-705G(LH)

E-679GT



20142013

E-800G(L)


E-770G(LH)

14






- Er rArr 0

- arrArr 0








15




Substrate

Die mount

（RT260oCRT）

After mount

0

20

40

6080

020 025 030 035 040Resin shrinkage（）

War

page

(PK

G) (

mm

)

(33)(34)

(35)(33)

( )CTE (ppm


16







17




Aggregation

Filler


FICS





Conventional

18





19



20


30 oC 270 oC

Shrinkage

Heating

Cooling

Temperature

Dim

ensi

on C

hang

e

30 oC 260 oC 260 oC 30 oC



Assembly process




21



Resin shrinkage ()

Cor

e sh

rinka

ge (

)

Core shrinkage ()

CTE

inco

olin

g pr

oces

s(pp

mo C






22





Underfill

Chip

substrate


Chip

Underfill

Bump

Solder resist

Cu

CuCore

Prepreg

Dimensions

23




Camera

Chamber

Reference grating

Light Analyzer

ChipSubstrate


Imageanalysis

Analysis result



24




Lowest warpage

25


Warpage Evaluation

Underfill

Chip

substrate



Warpage mode

Convex

Concave

Room Temp(Start)

Reflow Temp



26


Contents



5 Conclusion


Air Foil


28



Conventionalfilm

LS (microm)



404035353030252520201515101055


SAP

01

02

03

04

05

06 M-SAP Subtra



a (micro

m)

Air Foil (Primer)



29


Low CTE good poor









Prepreg

Core

For multilayer

Airfoil

Primer


For core material



31

PrepregCore






XX XX X


Primer



32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54




14






- Er rArr 0

- arrArr 0








15




Substrate

Die mount

（RT260oCRT）

After mount

0

20

40

6080

020 025 030 035 040Resin shrinkage（）

War

page

(PK

G) (

mm

)

(33)(34)

(35)(33)

( )CTE (ppm


16







17




Aggregation

Filler


FICS





Conventional

18





19



20


30 oC 270 oC

Shrinkage

Heating

Cooling

Temperature

Dim

ensi

on C

hang

e

30 oC 260 oC 260 oC 30 oC



Assembly process




21



Resin shrinkage ()

Cor

e sh

rinka

ge (

)

Core shrinkage ()

CTE

inco

olin

g pr

oces

s(pp

mo C






22





Underfill

Chip

substrate


Chip

Underfill

Bump

Solder resist

Cu

CuCore

Prepreg

Dimensions

23




Camera

Chamber

Reference grating

Light Analyzer

ChipSubstrate


Imageanalysis

Analysis result



24




Lowest warpage

25


Warpage Evaluation

Underfill

Chip

substrate



Warpage mode

Convex

Concave

Room Temp(Start)

Reflow Temp



26


Contents



5 Conclusion


Air Foil


28



Conventionalfilm

LS (microm)



404035353030252520201515101055


SAP

01

02

03

04

05

06 M-SAP Subtra



a (micro

m)

Air Foil (Primer)



29


Low CTE good poor









Prepreg

Core

For multilayer

Airfoil

Primer


For core material



31

PrepregCore






XX XX X


Primer



32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54





15




Substrate

Die mount

（RT260oCRT）

After mount

0

20

40

6080

020 025 030 035 040Resin shrinkage（）

War

page

(PK

G) (

mm

)

(33)(34)

(35)(33)

( )CTE (ppm


16







17




Aggregation

Filler


FICS





Conventional

18





19



20


30 oC 270 oC

Shrinkage

Heating

Cooling

Temperature

Dim

ensi

on C

hang

e

30 oC 260 oC 260 oC 30 oC



Assembly process




21



Resin shrinkage ()

Cor

e sh

rinka

ge (

)

Core shrinkage ()

CTE

inco

olin

g pr

oces

s(pp

mo C






22





Underfill

Chip

substrate


Chip

Underfill

Bump

Solder resist

Cu

CuCore

Prepreg

Dimensions

23




Camera

Chamber

Reference grating

Light Analyzer

ChipSubstrate


Imageanalysis

Analysis result



24




Lowest warpage

25


Warpage Evaluation

Underfill

Chip

substrate



Warpage mode

Convex

Concave

Room Temp(Start)

Reflow Temp



26


Contents



5 Conclusion


Air Foil


28



Conventionalfilm

LS (microm)



404035353030252520201515101055


SAP

01

02

03

04

05

06 M-SAP Subtra



a (micro

m)

Air Foil (Primer)



29


Low CTE good poor









Prepreg

Core

For multilayer

Airfoil

Primer


For core material



31

PrepregCore






XX XX X


Primer



32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54




16







17




Aggregation

Filler


FICS





Conventional

18





19



20


30 oC 270 oC

Shrinkage

Heating

Cooling

Temperature

Dim

ensi

on C

hang

e

30 oC 260 oC 260 oC 30 oC



Assembly process




21



Resin shrinkage ()

Cor

e sh

rinka

ge (

)

Core shrinkage ()

CTE

inco

olin

g pr

oces

s(pp

mo C






22





Underfill

Chip

substrate


Chip

Underfill

Bump

Solder resist

Cu

CuCore

Prepreg

Dimensions

23




Camera

Chamber

Reference grating

Light Analyzer

ChipSubstrate


Imageanalysis

Analysis result



24




Lowest warpage

25


Warpage Evaluation

Underfill

Chip

substrate



Warpage mode

Convex

Concave

Room Temp(Start)

Reflow Temp



26


Contents



5 Conclusion


Air Foil


28



Conventionalfilm

LS (microm)



404035353030252520201515101055


SAP

01

02

03

04

05

06 M-SAP Subtra



a (micro

m)

Air Foil (Primer)



29


Low CTE good poor









Prepreg

Core

For multilayer

Airfoil

Primer


For core material



31

PrepregCore






XX XX X


Primer



32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54




17




Aggregation

Filler


FICS





Conventional

18





19



20


30 oC 270 oC

Shrinkage

Heating

Cooling

Temperature

Dim

ensi

on C

hang

e

30 oC 260 oC 260 oC 30 oC



Assembly process




21



Resin shrinkage ()

Cor

e sh

rinka

ge (

)

Core shrinkage ()

CTE

inco

olin

g pr

oces

s(pp

mo C






22





Underfill

Chip

substrate


Chip

Underfill

Bump

Solder resist

Cu

CuCore

Prepreg

Dimensions

23




Camera

Chamber

Reference grating

Light Analyzer

ChipSubstrate


Imageanalysis

Analysis result



24




Lowest warpage

25


Warpage Evaluation

Underfill

Chip

substrate



Warpage mode

Convex

Concave

Room Temp(Start)

Reflow Temp



26


Contents



5 Conclusion


Air Foil


28



Conventionalfilm

LS (microm)



404035353030252520201515101055


SAP

01

02

03

04

05

06 M-SAP Subtra



a (micro

m)

Air Foil (Primer)



29


Low CTE good poor









Prepreg

Core

For multilayer

Airfoil

Primer


For core material



31

PrepregCore






XX XX X


Primer



32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54




18





19



20


30 oC 270 oC

Shrinkage

Heating

Cooling

Temperature

Dim

ensi

on C

hang

e

30 oC 260 oC 260 oC 30 oC



Assembly process




21



Resin shrinkage ()

Cor

e sh

rinka

ge (

)

Core shrinkage ()

CTE

inco

olin

g pr

oces

s(pp

mo C






22





Underfill

Chip

substrate


Chip

Underfill

Bump

Solder resist

Cu

CuCore

Prepreg

Dimensions

23




Camera

Chamber

Reference grating

Light Analyzer

ChipSubstrate


Imageanalysis

Analysis result



24




Lowest warpage

25


Warpage Evaluation

Underfill

Chip

substrate



Warpage mode

Convex

Concave

Room Temp(Start)

Reflow Temp



26


Contents



5 Conclusion


Air Foil


28



Conventionalfilm

LS (microm)



404035353030252520201515101055


SAP

01

02

03

04

05

06 M-SAP Subtra



a (micro

m)

Air Foil (Primer)



29


Low CTE good poor









Prepreg

Core

For multilayer

Airfoil

Primer


For core material



31

PrepregCore






XX XX X


Primer



32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54




19



20


30 oC 270 oC

Shrinkage

Heating

Cooling

Temperature

Dim

ensi

on C

hang

e

30 oC 260 oC 260 oC 30 oC



Assembly process




21



Resin shrinkage ()

Cor

e sh

rinka

ge (

)

Core shrinkage ()

CTE

inco

olin

g pr

oces

s(pp

mo C






22





Underfill

Chip

substrate


Chip

Underfill

Bump

Solder resist

Cu

CuCore

Prepreg

Dimensions

23




Camera

Chamber

Reference grating

Light Analyzer

ChipSubstrate


Imageanalysis

Analysis result



24




Lowest warpage

25


Warpage Evaluation

Underfill

Chip

substrate



Warpage mode

Convex

Concave

Room Temp(Start)

Reflow Temp



26


Contents



5 Conclusion


Air Foil


28



Conventionalfilm

LS (microm)



404035353030252520201515101055


SAP

01

02

03

04

05

06 M-SAP Subtra



a (micro

m)

Air Foil (Primer)



29


Low CTE good poor









Prepreg

Core

For multilayer

Airfoil

Primer


For core material



31

PrepregCore






XX XX X


Primer



32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54




20


30 oC 270 oC

Shrinkage

Heating

Cooling

Temperature

Dim

ensi

on C

hang

e

30 oC 260 oC 260 oC 30 oC



Assembly process




21



Resin shrinkage ()

Cor

e sh

rinka

ge (

)

Core shrinkage ()

CTE

inco

olin

g pr

oces

s(pp

mo C






22





Underfill

Chip

substrate


Chip

Underfill

Bump

Solder resist

Cu

CuCore

Prepreg

Dimensions

23




Camera

Chamber

Reference grating

Light Analyzer

ChipSubstrate


Imageanalysis

Analysis result



24




Lowest warpage

25


Warpage Evaluation

Underfill

Chip

substrate



Warpage mode

Convex

Concave

Room Temp(Start)

Reflow Temp



26


Contents



5 Conclusion


Air Foil


28



Conventionalfilm

LS (microm)



404035353030252520201515101055


SAP

01

02

03

04

05

06 M-SAP Subtra



a (micro

m)

Air Foil (Primer)



29


Low CTE good poor









Prepreg

Core

For multilayer

Airfoil

Primer


For core material



31

PrepregCore






XX XX X


Primer



32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54




21



Resin shrinkage ()

Cor

e sh

rinka

ge (

)

Core shrinkage ()

CTE

inco

olin

g pr

oces

s(pp

mo C






22





Underfill

Chip

substrate


Chip

Underfill

Bump

Solder resist

Cu

CuCore

Prepreg

Dimensions

23




Camera

Chamber

Reference grating

Light Analyzer

ChipSubstrate


Imageanalysis

Analysis result



24




Lowest warpage

25


Warpage Evaluation

Underfill

Chip

substrate



Warpage mode

Convex

Concave

Room Temp(Start)

Reflow Temp



26


Contents



5 Conclusion


Air Foil


28



Conventionalfilm

LS (microm)



404035353030252520201515101055


SAP

01

02

03

04

05

06 M-SAP Subtra



a (micro

m)

Air Foil (Primer)



29


Low CTE good poor









Prepreg

Core

For multilayer

Airfoil

Primer


For core material



31

PrepregCore






XX XX X


Primer



32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54




22





Underfill

Chip

substrate


Chip

Underfill

Bump

Solder resist

Cu

CuCore

Prepreg

Dimensions

23




Camera

Chamber

Reference grating

Light Analyzer

ChipSubstrate


Imageanalysis

Analysis result



24




Lowest warpage

25


Warpage Evaluation

Underfill

Chip

substrate



Warpage mode

Convex

Concave

Room Temp(Start)

Reflow Temp



26


Contents



5 Conclusion


Air Foil


28



Conventionalfilm

LS (microm)



404035353030252520201515101055


SAP

01

02

03

04

05

06 M-SAP Subtra



a (micro

m)

Air Foil (Primer)



29


Low CTE good poor









Prepreg

Core

For multilayer

Airfoil

Primer


For core material



31

PrepregCore






XX XX X


Primer



32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54




23




Camera

Chamber

Reference grating

Light Analyzer

ChipSubstrate


Imageanalysis

Analysis result



24




Lowest warpage

25


Warpage Evaluation

Underfill

Chip

substrate



Warpage mode

Convex

Concave

Room Temp(Start)

Reflow Temp



26


Contents



5 Conclusion


Air Foil


28



Conventionalfilm

LS (microm)



404035353030252520201515101055


SAP

01

02

03

04

05

06 M-SAP Subtra



a (micro

m)

Air Foil (Primer)



29


Low CTE good poor









Prepreg

Core

For multilayer

Airfoil

Primer


For core material



31

PrepregCore






XX XX X


Primer



32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54




24




Lowest warpage

25


Warpage Evaluation

Underfill

Chip

substrate



Warpage mode

Convex

Concave

Room Temp(Start)

Reflow Temp



26


Contents



5 Conclusion


Air Foil


28



Conventionalfilm

LS (microm)



404035353030252520201515101055


SAP

01

02

03

04

05

06 M-SAP Subtra



a (micro

m)

Air Foil (Primer)



29


Low CTE good poor









Prepreg

Core

For multilayer

Airfoil

Primer


For core material



31

PrepregCore






XX XX X


Primer



32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54




25


Warpage Evaluation

Underfill

Chip

substrate



Warpage mode

Convex

Concave

Room Temp(Start)

Reflow Temp



26


Contents



5 Conclusion


Air Foil


28



Conventionalfilm

LS (microm)



404035353030252520201515101055


SAP

01

02

03

04

05

06 M-SAP Subtra



a (micro

m)

Air Foil (Primer)



29


Low CTE good poor









Prepreg

Core

For multilayer

Airfoil

Primer


For core material



31

PrepregCore






XX XX X


Primer



32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54




26


Contents



5 Conclusion


Air Foil


28



Conventionalfilm

LS (microm)



404035353030252520201515101055


SAP

01

02

03

04

05

06 M-SAP Subtra



a (micro

m)

Air Foil (Primer)



29


Low CTE good poor









Prepreg

Core

For multilayer

Airfoil

Primer


For core material



31

PrepregCore






XX XX X


Primer



32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54





Air Foil


28



Conventionalfilm

LS (microm)



404035353030252520201515101055


SAP

01

02

03

04

05

06 M-SAP Subtra



a (micro

m)

Air Foil (Primer)



29


Low CTE good poor









Prepreg

Core

For multilayer

Airfoil

Primer


For core material



31

PrepregCore






XX XX X


Primer



32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54





28



Conventionalfilm

LS (microm)



404035353030252520201515101055


SAP

01

02

03

04

05

06 M-SAP Subtra



a (micro

m)

Air Foil (Primer)



29


Low CTE good poor









Prepreg

Core

For multilayer

Airfoil

Primer


For core material



31

PrepregCore






XX XX X


Primer



32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54





29


Low CTE good poor









Prepreg

Core

For multilayer

Airfoil

Primer


For core material



31

PrepregCore






XX XX X


Primer



32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54







Prepreg

Core

For multilayer

Airfoil

Primer


For core material



31

PrepregCore






XX XX X


Primer



32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54





31

PrepregCore






XX XX X


Primer



32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54





32





0

02

04

06

08

1 2 3 4 5

Peel

str

engt

h (k

Nm

)

0

02

04

06

08

1 2 3 4 5

Surf

ace

roug

hnes

s (μ

m)

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil

679FG(R)+Air Foil

679GT+Air Foil

700G(R)+Air Foil

705G+Air Foil

800G+Air Foil


33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54





33



Carrier -


SurfaceFormation

Method

-


Ra microm 005-008 030-040

Peel kNm 07-08 07-09




10 μm 10 μm

10 μm 10 μm










35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54













35

Item Airfoil PF-EL

Ra (microm) 009 038



Cross-sectionimage

(After plating)



5 μm5 μm

Plating copper

PF-EL

PrepregPrepreg

Plating copper

Air Foil



E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54





E-700G(R) + Airfoil

86 mmwidth

200 μm


PatterningR

esis

tanc

e m

easu

rem

ent

Seed layer

Evaluating method


Res

ista

nce

(Ω)





Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54






Air Foil



20μm


38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54





38


73μm

100 μm 10 μm

DFR RY-5319

W293 μm

10 μm








39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54





39

Surface photograph

Prepreg


Airfoil






Cross section






Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54









Structure

Insu

latio

n re

sist

ance

(ohm

)

Time (hr)


LS=55 μm


41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54




41





Pattern for S21


Core(E-700G(R))



Standard foil

PF-EL-12SAPP

Airfoil




Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54







Application of NFT


Package substrate


Core

Build-up material

Solder resist (SR)

Multilayer board

NFT






CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54





CuO

Cu

Oxidation

Precious metal


Dry treatment

Activation





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54





Etching Oxi-Red NFT



10 μm






NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54







NFT(004 - 006 μm)



1 μm







AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54






AS-Z3Air Foil

DFR RY5319 46

9

5

8


Cu

19(Unit μm)



(Unit μm)

Pattern plating



(Unit μm)


Surface

Cross-section(FIB)


50 μm 50 μm

5 μm 5 μm


W W


1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54





1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm



1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54





1） L 3 μm S 3 μm H 4 μm

L 29 μm

H 45 μm

50 μm 10 μm




51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54






51



705G 705G(LH) 770G 770G(LH) 900G 900G(LH)


Resin Content() 73 69 72 67 72 65



Dk(SPDR)

1GHz 39 41 38 40 34 33

10GHz 38 40 38 39 33 33

Df(SPDR)

1GHz 0008 0008 0007 0007 0004 0004

10GHz 0012 0012 0009 0009 0005 0005

Tg DMA oC 300 300 310 310 260 260


110 58 65 52 194 93

a2 (XY) 25 25 25 25 60 20



52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54




52



30

31

32

33

34

35

36

37

38

0 10 20 30 40 50 60 70

Dk

Frequency (GHz)

0

0002

0004

0006

0008

0010

0012

0 10 20 30 40 50 60 70

Df

Frequency (GHz)





5Conclusion




54





5Conclusion




54




54




can we prepare organic materials for 2.1 d next generation...

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