chapter 4 effect of oxalic acid on the optical,...
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CHAPTER 4
EFFECT OF OXALIC ACID ON THE OPTICAL,
THERMAL, DIELECTRIC AND MECHANICAL
BEHAVIOUR OF ADP CRYSTALS
4.1 INTRODUCTION
Oxalic acid is a hydrogen-bonded material. It is the only possible
compound in which two carboxyl groups are joined directly and for this
reason oxalic acid is one of the strongest acids in organic compounds. It is
expected that the presence of oxalic acid in ADP can enhance the nonlinearity
of the crystal (Chitra et al 2004). It is already found that the addition of
oxalic acid gives significant variations on the properties of the ADP crystals
(Bhagavannarayana et al 2008).
There is no report available in the literature on the effect of oxalic
acid on the optical, thermal, mechanical and dielectric properties of
ammonium dihydrogen phosphate crystals. Keeping this in our mind, in our
laboratory it was proposed to grow ADP crystal added with 1, 3 and 5 mol%
of oxalic acid. The effects of impurity atoms on the quality and performance
of the crystals are analysed. The results of the doped ADP crystals grown by
slow evaporation method are compared with the results of the pure ADP
grown by the same method. Already Bhagavannarayana et al (2008) have
reported the enhanced crystalline perfection and SHG efficiency of the oxalic
acid added ADP crystals. In this present work, we have studied and reported
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the optical, thermal, dielectric and mechanical behaviours of the oxalic acid
added ADP crystals as against the pure ADP crystals.
4.2 CRYSTAL GROWTH
The commercially available ADP was used for growth, after
repeated recrystallization. Single crystals of pure and oxalic acid added ADP
crystals were grown using deionized water as a solvent by slow evaporation
method. 1000 ml saturated solution of ADP was prepared and filtered at room
temperature and the solution was divided equally into four beakers and it was
named as A, B, C and D. Each beaker contains 250 ml of ADP solution. The
beaker A was kept closed with porously sealed cover. Oxalic acid of 1, 3 and
5 mol% was added into the beakers B, C and D, respectively and the beakers
were closed with the same type of covers. All the beakers were allowed to
evaporate in an identical condition. After four days, tiny crystals were seen in
the beakers A and B, whereas in C and D it was observed one day later only.
All crystals were harvested in 20 days. The colourless transparent crystals
harvested were of size up to 20x10x20 mm3 from the beaker B. All the others
were smaller in size. The grown pure, 1, 3 and 5 mol% oxalic acid added
ADP crystals are respectively shown in the Figures 4.1 to 4.4. Ammonium
dihydrogen phosphate and oxalic acid used in the present study were bought
from Merck, India and the deionized water got from Millipore water
pre-filtration unit. The resistivity of the used deionized water is 18.2 M cm.
4.3 GROWTH RATE
The growth rate of crystals was high in 1 mol% of oxalic acid
added ADP and it was decreased in the higher concentrations. Quite likely, at
high concentrations of addition, the adsorption film blocked the growth
surface and inhibited the growth process. Bulk single crystals were grown
using optimized growth parameters. High-quality transparent crystals were
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harvested from the growth medium in the presence of low concentration of
oxalic acid (1 mol%). Less transparency and also occlusions were observed
in the crystals harvested at higher concentrations of oxalic acid (3 and
5 mol%).
Figure 4.1 Pure ADP single crystals
Figure 4.2 1 mol% oxalic acid doped ADP single crystals
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Figure 4.3 3 mol% oxalic acid doped ADP single crystals
Figure 4.4 5 mol% oxalic acid doped ADP single crystals
4.4 CHARACTERIZATION
4.4.1 UV-Vis-NIR Spectroscopy
Crystal plates of pure, 1, 3 and 5 mol% of oxalic acid added ADP
crystals of thickness 2 mm were cut and polished at the face (1 0 0) without
any coating for optical measurements. The transmission spectra of the crystals
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200 400 600 800 1000 1200
10
15
20
25
30
35
40
45
50
55
wavelenghth (nm)
Tra
nsm
ita
nce
(%
)
Pure ADP
ADP+ 1 mol% of oxalic acid
ADP+ 3 mol% of oxalic acid
ADP+ 5 mol% of oxalic acid
were recorded using the Perkin-Elmer Lambda-35 UV-Visible spectrometer
in the wavelength region from 200 to 1100 nm. The recorded optical spectra
are shown in the Figure 4.5. It is observed from the figure that the
transmittance is good in the entire visible region for the pure ADP crystals. It
has approximately 50 % of transmittance. The 1, 3 and 5 mol% of oxalic acid
added crystals have transmittance less than the pure crystal. The addition of
oxalic acid gradually decreases the transparency of the crystals. In order to
confirm the reproducibility, the transmittance studies were repeated several
times for the crystal plates cut from the different parts of the grown crystals
and the same results were observed, thus confirming also the uniformity of
the dopant in a given crystal. There are steps in the transmission curves
between the region 300-400 nm. This is due to change of optics in the
photometer. The above results indicate that the increasing oxalic acid
concentrations decreased the transmittance gradually.
Figure 4.5 Transmission spectra of the grown crystals
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4.4.2 TG-DTA Analysis
The thermo gravimetric analysis and differential thermal analysis
were performed using Perkin-Elmer Diamond TG/DTA thermal analyzer at
heating rate 10 °C/min. in inert nitrogen atmosphere ranging from 30oC to
300oC.
Figures 4.6 and 4.7 show the TGA and DTA curves for pure and
doped ADP crystals respectively. The DTA curve shows an endothermic peak
at 215 °C for the pure ADP at 207 °C for 1 mol% of oxalic acid added ADP.
This endothermic peak corresponds to the decomposition temperature of the
crystal. The detailed data for all the crystals are shown in the Table 4.1. It is
seen from the table that an increase in oxalic acid concentration decreases the
decomposition temperature. The measurement was repeated several times and
same results were observed. The melting point of the oxalic acid is 101.5oC
(Science lab-material safety data sheet). The presence of oxalic acid appears
to decrease the decomposition temperature.
Figure 4.6 TGA curves of the grown crystals
50 100 150 200 250 300
75
80
85
90
95
100
______Pure ADP
______ADP+1 mol %oxalic acid
______ADP+3 mol % oxalic acid
______ADP+5 mol % oxalic acid
We
igh
t (
%)
Temperature (oC)
73
Figure 4.7 DTA curves of the grown crystals
Table 4.1 Thermal analysis data of the grown crystals
Crystal
Endothermic
peak
(oC)
Decomposition
Starting temperature
(oC)
Pure ADP 215 197
1 mol% of oxalic acid added ADP 209 196
3 mol% of oxalic acid added ADP 207 192
5 mol% of oxalic acid added ADP 202 191
4.4.3 Vickers Hardness Measurements
Vickers hardness studies have been carried out using the instrument
Shimadzu microhardness tester – HMV –2T. The indentation hardness was
measured as the ratio of applied load to the surface area of the indentation.
Hardness is one of the important mechanical properties of the materials. It is used
to measure the plastic properties and strength of a material. Hardness is defined
as resistance against lattice destruction (Kishan Rao and Srideshmukh 1983).
The pure and oxalic acid added crystals of size 5x5x3 mm3 with (1 0 0) face
50 100 150 200 250 300
-60
-40
-20
0
20
40
______Pure ADP
______ADP+1 mol %oxalic acid
______ADP+3 mol % oxalic acid
______ADP+5 mol % oxalic acid
Mic
rovo
lt E
ndo
do
wn
(V
)
Temperature (oC)
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0 50 100 150 200 250 300
35
40
45
50
55
60
65
70 Pure ADP
ADP + 1 mol% of oxalic acid
ADP + 3 mol% of oxalic acid
ADP + 5 mol% of oxalic acid
Hard
ne
ss (H
V)
kg
/mm
2
Load (p) g
were selected for microhardness studies. Indentations were carried out using
Vickers indenter for varying loads. For each load (p), several indentations
were made and the average value of the diagonal length (d) was used to
calculate the microhardness of the crystals.
Figure 4.8 Vickers hardness spectra of the grown crystals
Vickers microhardness number was determined using Hv =1.8544 p/d2.
A plot drawn between the hardness value and corresponding loads is shown in
Figure 4.8. It is observed from the figure that the hardness increases with
increase in load for all the crystals and up to 300 g no cracks have been
observed for the pure and 1 mol% of oxalic acid added crystals, whereas in
3 and 5 mol% of oxalic acid added ADP cracks were observed at 200 g itself
and the hardness started to decrease. Similarly addition of higher
concentration of oxalic acid decreases the hardness value of the crystal.
Hardness is the resistance offered by a solid to the movement of dislocation.
Due to the application of mechanical stress by the indenter, dislocations are
generated locally at the region of the indentation. Lower hardness value of
3 and 5 mol% oxalic acid added ADP crystals indicates that lesser stress is
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sufficient to form dislocation thus confirming that the crystalline perfection is
not good in the crystals.
4.4.4 Dielectric Studies
The temperature dependence of dielectric constant and the
dielectric loss of the pure, 1, 3, 5 mol% of oxalic acid added ADP crystals
were measured at the frequencies 1 kHz and 100 kHz using Agilent 4284-A
LCR meter. Cylindrical crystal plate of 9 mm diameter and 2 mm thickness
was placed between the two electrodes, which acts as a parallel plate
capacitor. Silver paint was coated on the surface of the sample in order to
make firm electrical contact. The capacitances of the sample were measured
for the applied frequency at different temperatures.
Figure 4.9 (a) and (b) show the variation of dielectric constants
with temperature at the frequencies 1 kHz and 100 kHz. It is observed from
the figures that the dielectric constant increases with increase of temperature
for the frequencies. This is normal dielectric behaviour of an antiferroelectric
ADP crystal. The dielectric constant of materials is due to the contribution of
electronic, ionic, dipolar and space charge polarizations, which depend on the
frequencies. At low frequencies, all these polarizations are active. The space
charge polarization is generally active at low frequencies and high
temperature. It is seen from the figures that the dielectric constant decreases
while increasing the concentration of oxalic acid.
The variation of dielectric loss with frequency is shown in
Figures 4.10 (a) and (b) at the frequencies 1 kHz and 100 kHz, respectively.
It is observed from the figures that the dielectric loss increases with increase
in temperature for the frequencies. It is also observed from the figures that
dielectric loss is high for oxalic acid added crystals. The low values of
dielectric loss indicate that the grown crystal contains minimum defects. In
accordance with Miller rule, the lower value of dielectric constant at higher
frequencies is a suitable parameter for the enhancement of SHG coefficient
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40 60 80 100 120 140 160
6.0
6.5
7.0
7.5
8.0
8.5 pure ADP
ADP + 1 mol% of oxalic acid
ADP + 3 mol% of oxalic acid
ADP + 5 mol% of oxalic acid
Temperature (oC)
Die
lectr
ic c
on
sta
nt
40 60 80 100 120 140 160
6
7
8
9
10
11
12
13
14
15
16
17
Die
lectr
ic c
on
sta
nt
Temperature (oC)
pure ADP
ADP + 1 mol% of oxalic acid
ADP + 3 mol% of oxalic acid
ADP + 5 mol% of oxalic acid
(a)
(b)
(Hundelshause 1971, Balarew and Duhlev 1984). In the present case addition
of more than 1 mol% oxalic acid increases dielectric loss of the crystals. This
indicates that 3 and 5 mol% of oxalic acid doped crystals have defects more
than the pure ADP.
Figure 4.9 Temperature dependence of dielectric constant at (a) 1 kHz
(b) 100 kHz
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Figure 4.10 Temperature dependence of dielectric loss at (a) 1 kHz
(b) 100 kHz
40 60 80 100 120 140 160
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
0.65
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15 pure ADP ADP + 1 mol% of oxalic acid
ADP + 3 mol% of oxalic acid
ADP + 5 mol% of oxalic acid
Die
elc
tric
loss
Temperature (oC)
40 60 80 100 120 140 160
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
0.22 pure ADP
ADP + 1 mol% of oxalic acid
ADP + 3 mol% of oxalic acid
ADP + 5 mol% of oxalic acid
Temperature (oC)
Die
elc
tric
lo
ss
(a)
(b)
78
4.4.5 SHG Measurements
It is seen from the above that the addition of oxalic acid plays an
important role in optical, thermal, mechanical, and dielectric behaviours of
ADP crystals. It was already found that the addition of 1 mol% of oxalic acid
enhanced the SHG efficiency of the ADP crystal. Similarly, in the present
case also, it is found that the addition of 1 mol% of oxalic acid has enhanced
SHG efficiencies of the crystal. The intensity of SHG gives an indication of
the nonlinear optical efficiency of the material. The doubling of frequency is
confirmed by green radiation of 532 nm. SHG output for pure and oxalic acid
added crystals are given in Table 4. 2. As seen in the table, SHG efficiency is
enhanced in 1 and 3 mol% of oxalic acid added ADP crystals where as in the
case of 5 mol% of oxalic acid, the SHG efficiency is decreased in comparison
to that of undoped material. These results are in good agreement with the
reported results (Bhagavannarayana et al 2008).
Table 4.2 SHG output signal values of the grown crystals
Crystal Output energy (mV)
Pure ADP 410 - 440
1 mol% of oxalic acid added ADP 480 - 500
3 mol% of oxalic acid added ADP 470 - 480
5 mol% of oxalic acid added ADP 370 - 390
The N-H-O bonding in ADP crystals connects the PO4 tetrahedra
with a neighboring NH4 group. Each oxygen atom is connected to another
oxygen atom in the neighbouring PO4 ion by two kinds of bonds: O-H-O and
N-H-O. When oxygen is connected with shorter N-H-O bond it tends to keep
other proton off in the O-H-O bond and when it is connected with the longer
N-H-O bond it tends to keep the acid proton nearby. Thus the extra hydrogen
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bonds produce a distorted NH4 ion lattice at low temperature and cooperate
with the acid protons in causing proton configurations (Shunmugam et al
1987). The electrical conduction in the dielectric is mainly a defect-controlled
process in the low temperature region. The defect concentration will increase
exponentially with temperature and consequently the electrical conduction
also increases and the dielectric constant decreases. Hydrogen atoms present
in the oxalic acid combine with the ADP and the divalent (C2O4)2-
ions
possibly substitute for trivalent phosphate (PO4)3-
ions in the ADP crystal
lattice and the charge compensation vacancies are created (Shunmugam et al
1982). These vacancies produce the defects in the crystal lattice. The increase
in the oxalic acid concentration increases the defects. Due to this defect the
dipole moment of the crystal is decreased. Decrease in the dipole moment
gradually decreases the dielectric constant of the crystal (Shunmugam et al
1982). Similarly, the more number of defects due to oxalic acid impurity
gradually decreases the transmittance of the crystal.
The initial concentration of oxalic acid in the solution was chosen
to be 1, 3 and 5 mol%. The concentration of oxalic acid in a crystal is
expected to be nearly uniform, irrespective of the distribution coefficient, as
large quantity of solution is involved in growing a crystal which is relatively
very small in weight compared to the ingredient in the mother solution. The
oxalic acid molecule is much large in size compared to ADP molecule. At
very low concentration the oxalic acid molecules may get distributed within
the crystal more or less uniformly. When the concentration is higher, the
oxalic acid molecules can occupy neither the interstitial positions nor the
substitutional sites of the crystalline matrix, but most of them seem to be
segregated at the boundaries. As the oxalic acid could not be distributed
statistically in the crystal, one cannot expect full enhancement of the physical
properties for which the dopants are meant. This has been seen clearly in the
SHG measurements wherein a decrease of SHG efficiency was found at
higher concentrations.
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4.5 CONCLUSIONS
Single crystals of oxalic acid added ADP were grown successfully
and it was found that 1 mol% oxalic acid added ADP crystal has growth rate
higher than the pure ADP. Addition of higher concentrations of oxalic acid
suppresses the growth rate and other properties. Increasing oxalic acid
concentration gradually decreases the optical transparency, hardness,
dielectric constant, and the decomposition temperature. With increase in
oxalic acid concentration, lowering of the decomposition temperature as well
as development of cracks at lower loads seem to be in conformity with each
other. It is concluded that, it is possible to harvest ADP crystals with higher
SHG efficiency in the presence of 1 mol% of oxalic acid.