characterization of circuit components using s-parameters chapter 1

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Characterization of Circuit Components Using S-Parameters Chapter 1

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Page 1: Characterization of Circuit Components Using S-Parameters Chapter 1

Characterization of Circuit Components Using

S-Parameters

Chapter 1

Page 2: Characterization of Circuit Components Using S-Parameters Chapter 1

Topic• S-Parameters– S1P– S2P

• Y-Parameters• Components–Wires– Inductors– Resistors– Capacitors– S-parameter Extraction

Page 3: Characterization of Circuit Components Using S-Parameters Chapter 1

One-Port S-Parameter

Incident wave (V1+) is Vin/2 (as if Zin=RS)

Voltage at the input of the receiver is Zin/(Zin+RS)Vin

Vin=V1-+V1

+

V1-=Vin -V1

+

V1-= Zin/(Zin+RS)Vin- Vin/2

=(Zin-RS)/[2(Zin+RS)]VinV1

-/ V1+ =(Zin-RS)/(Zin+RS)

Page 4: Characterization of Circuit Components Using S-Parameters Chapter 1

One-Port S-Parameter

Series RLC with resonant frequency at

Resistance at resonant frequency: RL

Page 5: Characterization of Circuit Components Using S-Parameters Chapter 1

Design a Series RLC Resonant Circuit

RL=50 ΩL1=2.4 mHRS=50 Ωfres=1 MHz

What is C1?

Page 6: Characterization of Circuit Components Using S-Parameters Chapter 1

Design a Series RLC Resonant Circuit

RL=50 ΩL1=2.4 mHRS=50 Ωfres=1 MHz

What is C1?C1=1/(Lω2

res)

Page 7: Characterization of Circuit Components Using S-Parameters Chapter 1

One-Port S-parameter

Power delivered to the load

Power reflected to the source

Page 8: Characterization of Circuit Components Using S-Parameters Chapter 1

Two-Port S-parameter

Reflected wave

Incident Wave generated by Vin

Actual voltage measured at the input of the two-port network: V1

++V1-

Actual voltage measured at the output of the two-port network: V2

++V2-

Incident wave into the output port or wave reflected from RL

Page 9: Characterization of Circuit Components Using S-Parameters Chapter 1

S11

Page 10: Characterization of Circuit Components Using S-Parameters Chapter 1

S11

Page 11: Characterization of Circuit Components Using S-Parameters Chapter 1

S12

Page 12: Characterization of Circuit Components Using S-Parameters Chapter 1

S12

Page 13: Characterization of Circuit Components Using S-Parameters Chapter 1

S22

Page 14: Characterization of Circuit Components Using S-Parameters Chapter 1

S22

Page 15: Characterization of Circuit Components Using S-Parameters Chapter 1

S21

Page 16: Characterization of Circuit Components Using S-Parameters Chapter 1

S21

Page 17: Characterization of Circuit Components Using S-Parameters Chapter 1

Y-Parameters

Yo=1/Zo

Page 18: Characterization of Circuit Components Using S-Parameters Chapter 1

Calculate Y-Parameters Using ADS

Page 19: Characterization of Circuit Components Using S-Parameters Chapter 1

Wires

• In the AWG system, the diameter of a wire will roughly double every six wire gauges. E.g.

Page 20: Characterization of Circuit Components Using S-Parameters Chapter 1

Skin Effect (Eddy Current)

Page 21: Characterization of Circuit Components Using S-Parameters Chapter 1

Skin Depth

The skin depth is thus defined as the depth below the surface of the conductor at which the current density has fallen to about 37% of its surface current density.

Page 22: Characterization of Circuit Components Using S-Parameters Chapter 1

Inductance of a Straight Wire

• breadboard wire: 22 AWG or 25.3 mils in diameter.

• Each mil =25.4 um or 0.0643 cm.• 5 cm of a No. 22 copper wire produce about 50

nH of inductance.

Page 23: Characterization of Circuit Components Using S-Parameters Chapter 1

Resistors

• Carbon-composition resistor• Wirewound resistor• Carbon-film resistor

Page 24: Characterization of Circuit Components Using S-Parameters Chapter 1

Carbon-Composition Resistors

Carbon composition resistors consist of a solid cylindrical resistive element with embedded wire leads. The resistive element is made from a mixture of finelyground (powdered) carbon and an insulating material (usually ceramic). The resistance is determined by the ratio of the fill material (the powdered ceramic) to the carbon. Higher concentrations of carbon, a good conductor, result in lower resistance. The parasitic capacitance arisesout small capacitance between carbon fill. More expensive than carbon film resistor.

Page 25: Characterization of Circuit Components Using S-Parameters Chapter 1

Wirewound Resistors

• Wirewound resistors are commonly made by winding a metal wire around a ceramic core.

• The inductance is much larger than a carbon composition resistor

• Poor temperature drift coefficient• Too much L and C to be useable at high frequencies

Page 26: Characterization of Circuit Components Using S-Parameters Chapter 1

Carbon Film Resistor

• Less expensive than carbon-composition resistors• Can drift with temperature and vibration• A carbon film is deposited on an insulating

substrate, and a helix is cut in it to create a long, narrow resistive path.

(Partially exposed)

Page 27: Characterization of Circuit Components Using S-Parameters Chapter 1

Generic Resistor Model

Page 28: Characterization of Circuit Components Using S-Parameters Chapter 1

Example8.7 nH 8.7 nH10K

0.3 pF

At 200 MHz

Impedance associated inductor is negligible

A 10 Kohm resistor looks like a 2564.3 resistor at 200 MHz.

Page 29: Characterization of Circuit Components Using S-Parameters Chapter 1

Insert an Equation in ADS

Page 30: Characterization of Circuit Components Using S-Parameters Chapter 1

Impedance at 200 MHz

10 KohmAt DC

Page 31: Characterization of Circuit Components Using S-Parameters Chapter 1

Extract Resistance from Y11

R=1/(0.0001) =10 KΩ

Page 32: Characterization of Circuit Components Using S-Parameters Chapter 1

Extract Capacitance (1)

Slope is constant!

Page 33: Characterization of Circuit Components Using S-Parameters Chapter 1

Extract Capacitance (2)C=Y11imag_deriv/2/π=1.88 pF/2/3.1416=0.2992 pF

Page 34: Characterization of Circuit Components Using S-Parameters Chapter 1

Generic Equivalent Circuit for a Capacitor

L: inductance of the leadsRp: account for leakage current

Page 35: Characterization of Circuit Components Using S-Parameters Chapter 1

Quality Factor of a Simplified Capacitance Model

Quality factor= Im[Z]/Re[Z] =1/(ωRC)

Page 36: Characterization of Circuit Components Using S-Parameters Chapter 1

Generic Equivalent Circuit for an Inductor

Series resistance+skin resistance

Page 37: Characterization of Circuit Components Using S-Parameters Chapter 1

Extraction Example

Page 38: Characterization of Circuit Components Using S-Parameters Chapter 1

Parasitic Resistance of an Inductor

R=1/0.033=30.3 Ω

Page 39: Characterization of Circuit Components Using S-Parameters Chapter 1

Inductance Extraction

L=R/(2πfL) =29.73 nH

Page 40: Characterization of Circuit Components Using S-Parameters Chapter 1

Parasitic Capacitance of an Inductor

Capacitance: 117.14 fF

Page 41: Characterization of Circuit Components Using S-Parameters Chapter 1

Quality Factor of a Simplified Inductor Circuit Model

Q=Quality factor= Im[Z]/Re[Z] = (ωL) /(R)

Larger Q, better inductor

Page 42: Characterization of Circuit Components Using S-Parameters Chapter 1

Additional Slides

Page 43: Characterization of Circuit Components Using S-Parameters Chapter 1

Metal Film Resistor

Page 44: Characterization of Circuit Components Using S-Parameters Chapter 1

Thin-Film Chip Resistor