circuit description - e-rusue-rusu.ro/scheme/samsung/cw...

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Circuit Description Samsung Electronics 13-1 13. Circuit Description 13-1 Circuit Key Point 13-1-1 Pin configuration of “Face-down” QIP versions 13-1-2 UOC3(TDA120XX) Pin Description 1 1 1 0 0 0 1 l a i t i n I l a i t i n I ) u n e M , n w o D e m u l o V , p U e m u l o V , n w o D l e n n a h C , p u l e n n a h C ( 1 y e K l e n a P - n i a r D n e p O 3 . 3 P 1 y e K l e n a P p 5 1 t r o P p o t S s u B - n i a r D n e p O 2 . 3 P p o t S s u B p 4 1 D I 2 t r a c S - y a R - X k c a J A C R - n i a r D n e p O 1 . 3 P 2 t r a c S p 3 1 D I 1 t r a c S - - n o i t p O A C R ( W / S r e t l i F w a S d n u o S M : d n u o S , w o L ) h g i H n i a r D n e p O 0 . 3 P 1 t r a c S p 2 1 n O e t u M d n u o S : h g i H - f f O e t u M d n u o S : w o L - l l u P h s u P 1 . 2 P e t u M d n u o S p 1 1 n o c o m e R , e d o M y B d n a t S ( d e L - l l u P h s u P 0 . 2 P D E L p 0 1 a t a D s u B C 2 I - l l u P h s u P 7 . 1 P A D S p 8 k c o l C s u B C 2 I - l l u P h s u P 6 . 1 P L C S p 7 3 . 1 P 1 . 1 P 0 . 1 P 5 . 0 P 0 . 0 P r e t s i g e R r e t s i g e R l l u P h s u P l l u P h s u P l l u P h s u P n i a r D n e p O l l u P h s u P e p y T t r o P e p y T t r o P n O r e w o P : h g i H - f f O r e w o P : w o L - r e w o P p 6 ) w o L : 8 5 . 3 C S T N , h g i H : L A P ( W / S L A P / C S T N - - W C r e t l i F w a S p 5 l i o C g n i s s u a g e D - l i o c D p 4 R I n o c o m e R - R I p 2 t l i T - t l i T p 1 5 ( ( m o c i M m o c i M ) 4 6 ~ 4 5 , 1 1 ~ 1 n i P ) 4 6 ~ 4 5 , 1 1 ~ 1 n i P e m a N e m a N n i P n i P o N o N 1 1 1 0 0 0 1 l a i t i n I l a i t i n I - ) r e t s i g e R r e t s i g e R e p y T t r o P e p y T t r o P - ) w o L : L , h g i H : ' L ( W / S w a S d n u o S ' L L/ ( ( n o i t p i r c s e D n o i t p i r c s e D n o i t p i r c s e D n o t p i r c s e D m o c i M m o c i M ) 4 6 ~ 4 5 , 1 1 ~ 1 n i P ) 4 6 ~ 4 5 , 1 1 ~ 1 n i P e m a N e m a N n i P n i P o N o N Europe China :

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Page 1: Circuit Description - e-Rusue-rusu.ro/scheme/Samsung/CW 21Z453NLXXEC/20061013135048781_s16c-p-circu...Circuit Description 13-2 Samsung Electronics 13-1-3 Control System Features *80C51

Circuit Description

Samsung Electronics 13-1

13. Circuit Description13-1 Circuit Key Point13-1-1 Pin configuration of “Face-down” QIP versions

13-1-2 UOC3(TDA120XX) Pin Description

1

1

100

0

1

laitinI laitinI

)uneM ,nwoD emuloV ,pU emuloV ,nwoD lennahC ,pu lennahC(1 yeK lenaP-niarD nepO3.3P1yeKlenaPp51

troP potS suB-niarD nepO2.3PpotSsuBp41

DI 2tracS-yaR-X kcaJ ACR-niarD nepO1.3P2tracSp31

DI 1tracS-- noitpO ACR(W/S retliF waS dnuoS M : dnuoS ,woL )hgiHniarD nepO0.3P1tracSp21

nO etuM dnuoS : hgiH- ffO etuM dnuoS : woL-lluP hsuP1.2PetuMdnuoSp11

nocomeR ,edoMyBdnatS(deL-lluP hsuP0.2PDELp01ataD suB C2I-lluP hsuP7.1PADSp8kcolC suB C2I-lluP hsuP6.1PLCSp7

3.1P

1.1P

0.1P

5.0P

0.0P

retsigeR retsigeR

lluP hsuP

lluP hsuP

lluP hsuP

niarD nepO

lluP hsuP

epyT troP epyT troP

nO rewoP : hgiH- ffO rewoP : woL-rewoPp6

)woL : 85.3CSTN ,hgiH : LAP(W/S LAP/CSTN-- WCretliFwaSp5

lioC gnissuageD-liocDp4

RInocomeR-RIp2

tliT-tliTp15

( ( mociM mociM )46 ~ 45 ,11 ~ 1 niP )46 ~ 45 ,11 ~ 1 niPemaN emaNniP niPoNoN

1

1

100

0

1

laitinI laitinI

-

)

retsigeR retsigeR epyT troP epyT troP

- )woL : L ,hgiH : 'L(W/S waS dnuoS 'LL /

( ( noitpircseD noitpircseD noitpircseD notpircseD mociM mociM )46 ~ 45 ,11 ~ 1 niP )46 ~ 45 ,11 ~ 1 niPemaN emaNniP niPoNoN

Europe

China :

Page 2: Circuit Description - e-Rusue-rusu.ro/scheme/Samsung/CW 21Z453NLXXEC/20061013135048781_s16c-p-circu...Circuit Description 13-2 Samsung Electronics 13-1-3 Control System Features *80C51

Circuit Description

13-2 Samsung Electronics

13-1-3 Control System Features

* 80C51 micro-controller core standard instruction set and timing* 0.4883 ms machine cycle (6 clock cycles with 12.288 MHz derived from an xtal frequency of 24.576MHz)* maximum 256k x 8-bit program ROM* maximum of 8k x 8-bit auxiliary RAM* auxiliary RAM page pointer* 12-level interrupt controller for individual enable/disable with two level priority* stand-by, idle and power-down modes* watchdog timer* two 16-bit timer/counters* additional 24-bit timer (16-bit timer with 8-bit Pre-scaler)* 16-bit data pointer* five 6-bit pulse width modulator (PWM) outputs for control of TV analogue signals.* one 14-bit PWM for voltage synthesis tuning control.* 8-bit ADC with 4 multiplexed inputs.* remote control pre-processor (RCP).* I2C byte level bus interface.* universal asynchronous receiver transmitter (UART)* 24 General I/O.

13-1-4 Vertical Circuit (LA78045)

rof lortnoc niag kcab deeF evah osla ezis erutcip lacitrev

tfihs lacitrev rotcennoc emos

rof lortnoc niag kcab deeF evah osla ezis erutcip lacitrev

tfihs lacitrev rotcennoc emos

Page 3: Circuit Description - e-Rusue-rusu.ro/scheme/Samsung/CW 21Z453NLXXEC/20061013135048781_s16c-p-circu...Circuit Description 13-2 Samsung Electronics 13-1-3 Control System Features *80C51

Circuit Description

Samsung Electronics 13-3

13-1-5 Power IC (STR-W6750F)

egatlov wol tupni CA

Page 4: Circuit Description - e-Rusue-rusu.ro/scheme/Samsung/CW 21Z453NLXXEC/20061013135048781_s16c-p-circu...Circuit Description 13-2 Samsung Electronics 13-1-3 Control System Features *80C51

Circuit Description

13-4 Samsung Electronics

13-1-6 TDA6109JF

Page 5: Circuit Description - e-Rusue-rusu.ro/scheme/Samsung/CW 21Z453NLXXEC/20061013135048781_s16c-p-circu...Circuit Description 13-2 Samsung Electronics 13-1-3 Control System Features *80C51

Circuit Description

Samsung Electronics 13-5

13-1-7 CRT Drive

13-1-8 Spot Killer

Page 6: Circuit Description - e-Rusue-rusu.ro/scheme/Samsung/CW 21Z453NLXXEC/20061013135048781_s16c-p-circu...Circuit Description 13-2 Samsung Electronics 13-1-3 Control System Features *80C51

Circuit Description

13-6 Samsung Electronics

13-1-9 Picture In Picture

Page 7: Circuit Description - e-Rusue-rusu.ro/scheme/Samsung/CW 21Z453NLXXEC/20061013135048781_s16c-p-circu...Circuit Description 13-2 Samsung Electronics 13-1-3 Control System Features *80C51

Circuit Description

Samsung Electronics 13-7

13-1-10 X-Ray Protection

tnioP tseT noitcetorP

egatloV retaeH morF

noitcetorP yaR-X”OTHE“ COU oT

47# niP

Page 8: Circuit Description - e-Rusue-rusu.ro/scheme/Samsung/CW 21Z453NLXXEC/20061013135048781_s16c-p-circu...Circuit Description 13-2 Samsung Electronics 13-1-3 Control System Features *80C51

13-8 Samsung Electronics

MEMO