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  • 8/17/2019 Cjha

    1/1

    1. Silicon diodes are preferred to germanium diodes for high temperature operation because:

    Rate of increase of reverse saturation current with temperature is more in case of silicon.2. In an unbiased P-N unction the current in e!uilibrium is:". In a regulated power suppl# using $ener diode the unregulated input voltage as compared

    to the regulated output voltage must be:%. &he di'usion capacitance of a forward biased P-N (unction diode varies:). &he di'usion capacitance of the P-N unction:*. + half wave recti,ed sinusoidal waveform has a pea voltage of 1/. Its average value 0

    RS value of the fundamental components are respectivel# given b#:. &he fre!uenc# of ripple in the output voltage of a " phase half controlled bridge recti,er

    depends on the:3. &he following ampli,er con,guration #ields the largest power gain of all transistor

    ampli,er con,gurations:4. &he doping concentrations of N-P-N transistors are:1.5hen reverse bias is applied to 6ate of (78& the depletion region width:11.In common source con,guration the input resistance of (78& will be appro9imatel#:12.&he turn of time of a SR will be normall# of the order of:1".In ;S78& devices the n channel t#pe is better than p hannel t#pe in the following

    aspect:1%.&he pinch o' voltage for (78& is % volts when /gs