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  • 7/14/2019 Cmos Logic Data Book

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    CMOS L

    Rev.

    This book presents technical data for the broad line of CMOS logic integrated circuits and demonductors continued commitment to MetalGate CMOS. Complete specifications are provided in theIn addition, a Product Selector Guide and a Handling and Design Guidelines chapter have been incthe user with these circuits.

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    ON Semiconductorand are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves thwithout further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its ppurpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically discincluding without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCIspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, inclvalidated for each customer application by customers technical experts. SCILLC does not convey any license under its patent righSCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the bintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation whermay occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indand its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, evenSCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Empl

    PUBLICATION ORDERING INFORMATION

    CENTRAL/SOUTH AMERICA:Spanish Phone: 3033087143 (MonFri 8:0

    Email: [email protected]

    ASIA/PACIFIC: LDC for ON Semiconductor APhone: 3036752121 (TueFri 9:00am to 1:0

    NORTH AMERICA Literature Fulfillment:Literature Distribution Center for ON SemiconductorP.O. Box 5163, Denver, Colorado 80217 USAPhone: 3036752175 or 8003443860 Toll Free USA/CanadaFax: 3036752176 or 8003443867Toll Free USA/CanadaEmail: ONlit@hibbertco com

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    Table of Contents

    Chapter 1 Master Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    Alphanumeric Listing of All CMOS Part Numbers with Function and Page Number Information Prov

    Chapter 2 Product Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    CMOS Selection Guide Sorted by Product Function

    Chapter 3 Reliability Audit Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    Explanation of On Semiconductors Outgoing Product Performance Audit Program

    Chapter 4 B and UB Series Family Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    Explanation of Standardized Specifications for the Product Family

    Chapter 5 CMOS Handling and Design Guidelines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    Handling Precautions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    Input Protection Network . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    Propagation Delay and Rise Time versus Series Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    Power Supplies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Outputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    CMOS Latch Up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    Chapter 6 CMOS Logic Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    See the Master Index for Page Numbering Information

    Chapter 7 CMOS Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    Basic Concepts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    Thermal Management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Air Flow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    Optimizing the Long Term Reliability of Plastic Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    Chapter 8 Equivalent Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    Chapter 9 Packaging Information Including Surface Mounts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    ON Semiconductor Major Worldwide Sales Offices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    ON Semiconductor Standard Document Type Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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    ALExIS, BulletProof, CHIPSCRETES, Designers, DUOWATT, EFET, EASY SWITCHER, ECL300, ECECLinPS Plus, ELite, EpiBase, Epicap, EZFET, FULLPAK, GEMFET, ICePAK, L2TMOS, MCCS, MDTL,

    MHTL, MiniMOS, MiniMOSORB, Mosorb, MRTL, MTTL, MultiPak, ONDemand, PowerBase,

    SCANSWITCH, SENSEFET, SLEEPMODE, SMALLBLOCK, SMARTDISCRETES, SMARTswitc

    SuperLock, Surmetic, SWITCHMODE, Thermopad, Thermowatt, TMOS, TMOS & Design Device, TM

    UNIT/PAK, Uniwatt, WaveFET, ZSwitch and ZIP R TRIM are trademarks of Semiconductor Compo

    (SCILLC).

    HDTMOS and HVTMOS are registered trademarks of Semiconductor Components Industries, LLC (SC

    All other brand names and product names appearing in this publication are registered trademarks o

    respective holders.

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    CH

    Mas

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    MASTER INDEX

    Device Function

    MC14001B Quad 2Input NOR Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14001UB Quad 2Input NOR Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14007UB Dual Complementary Pair Plus Inverter . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14008B 4Bit Full Adder . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14011B Quad 2Input NAND Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14011UB Quad 2Input NAND Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14013B Dual D FlipFlop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14014B 8Bit Static Shift Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14015B Dual 4Bit Static Shift Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14016B Quad Analog Switch/Multiplexer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14017B Decade Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14018B Presettable DividebyN Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14020B 14Bit Binary Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14021B 8Bit Static Shift Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14022B Octal Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14023B Triple 3Input NAND Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14024B 7Stage Ripple Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14025B Triple 3Input NOR Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14027B Dual JK FlipFlop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14028B BCDtoDecimal/BinarytoOctal Decoder . . . . . . . . . . . . . . . . . . . . .

    MC14029B Presettable Binary/BCD Up/Down Counter . . . . . . . . . . . . . . . . . . . . . .

    MC14040B 12Bit Binary Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14042B Quad Transparent Latch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14043B Quad NOR RS Latch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14044B Quad NAND RS Latch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14046B PhaseLocked Loop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14049B Hex Inverting Buffer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14049UB Hex Inverting Buffer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14050B Hex Noninverting Buffer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14051B 8Channel Analog Multiplexer/Demultiplexer . . . . . . . . . . . . . . . . . . . .

    MC14052B Dual 4Channel Analog Multiplexer/Demultiplexer . . . . . . . . . . . . . . . .MC14053B Triple 2Channel Analog Multiplexer/Demultiplexer . . . . . . . . . . . . . . .

    MC14060B 14Bit Binary Counter and Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14066B Quad Analog Switch/Multiplexer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14067B 16Channel Analog Multiplexer/Demultiplexer . . . . . . . . . . . . . . . . . . .

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    Device Function

    MC14081B Quad 2Input AND Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14082B Dual 4Input AND Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14093B Quad 2Input NAND Schmitt Trigger . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14094B 8Stage Shift/Store Register with TriState Outputs . . . . . . . . . . . . . . .

    MC14099B 8Bit Addressable Latch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14106B Hex Schmitt Trigger . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14174B Hex D FlipFlop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14175B Quad D FlipFlop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14490 Hex Contact Bounce Eliminator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14503B Hex 3State Buffer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14504B TTL or CMOS to CMOS Hex Level Shifter . . . . . . . . . . . . . . . . . . . . . . MC14511B BCDto7Segment Latch/Decoder/Driver . . . . . . . . . . . . . . . . . . . . . .

    MC14512B 8Channel Data Selector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14513B BCDto7Segment Latch/Decoder/Driver with Ripple Blanking . . . .

    MC14514B 4Bit Transparent Latch/4to16 Line Decoder (High) . . . . . . . . . . . . .

    MC14515B 4Bit Transparent Latch/4to16 Line Decoder (Low) . . . . . . . . . . . . .

    MC14516B Presettable Binary Up/Down Counter . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14517B Dual 64Bit Static Shift Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14518B Dual BCD Up Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14520B Dual Binary Up Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14521B 24Stage Frequency Divider . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14526B Presettable 4Bit Binary Down Counter . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14528B Dual Monostable Multivibrator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14532B 8Bit Priority Encoder . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14536B Programmable Timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14538B Dual Precision Monostable Multivibrator . . . . . . . . . . . . . . . . . . . . . . . . MC14541B Programmable Oscillator/Timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14543B BCDto7Segment Latch/Decoder/Driver for Liquid Crystals . . . . . .

    MC14549B Successive Approximation Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14551B Quad 2Channel Analog Multiplexer/Demultiplexer . . . . . . . . . . . . . . .

    MC14553B 3Digit BCD Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14555B Dual Binary to 1of4 Decoder (Active High Outputs) . . . . . . . . . . . . .

    MC14556B Dual Binary to 1of4 Decoder (Active Low Outputs) . . . . . . . . . . . . . .

    MC14557B 1to64 Bit Variable Length Shift Register . . . . . . . . . . . . . . . . . . . . . . .

    MC14559B Successive Approximation Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14562B 128Bit Static Shift Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14569B Programmable Dual 4Bit Binary/BCD Down Counter . . . . . . . . . . . . .

    MC14572UB Hex Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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    Product Select

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    CMOS Selection Guide by Function

    Device Function

    NAND Gates

    MC14011B Quad 2Input NAND Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14011UB Quad 2Input NAND Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14093B Quad 2Input NAND Schmitt Trigger . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14023B Triple 3Input NAND Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    NOR GatesMC14001B Quad 2Input NOR Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14001UB Quad 2Input NOR Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14025B Triple 3Input NOR Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    AND GatesMC14081B Quad 2Input AND Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14073B Triple 3Input AND Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14082B Dual 4Input AND Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    Complex Gates

    MC14070B Quad Exclusive OR Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14077B Quad Exclusive NOR Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14572UB Hex Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    Inverters/Buffers/Level TranslatorMC14007UB Dual Complementary Pair Plus Inverter . . . . . . . . . . . . . . . . . . . . . . . . . MC14049B Hex Inverting Buffer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14049UB Hex Inverting Buffer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14050B Hex Noninverting Buffer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14069UB Hex Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14503B Hex 3State Buffer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14504B TTL or CMOS to CMOS Hex Level Shifter . . . . . . . . . . . . . . . . . . . . . . MC14584B Hex Schmitt Trigger . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    Decoders/EncodersMC14028B BCDtoDecimal/BinarytoOctal Decoder . . . . . . . . . . . . . . . . . . . . . MC14511B BCDto7Segment Latch/Decoder/Driver . . . . . . . . . . . . . . . . . . . . . . MC14513B BCDto7Segment Latch/Decoder/Driver with Ripple Blanking . . . .MC14543B BCDto7Segment Latch/Decoder/Driver for Liquid Crystals . . . . . .MC14514B 4Bit Transparent Latch/4to16 Line Decoder (High) . . . . . . . . . . . . .MC14515B 4Bit Transparent Latch/4to16 Line Decoder (Low) . . . . . . . . . . . . .MC14532B 8Bit Priority Encoder . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14555B Dual Binary to 1of4 Decoder (Active High Outputs) . . . . . . . . . . . . .MC14556B Dual Binary to 1of4 Decoder (Active Low Outputs) . . . . . . . . . . . . . .

    Multiplexers/Demultiplexers/Bilateral Switches

    MC14016B Quad Analog Switch/Multiplexer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14066B Quad Analog Switch/Multiplexer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14551B Quad 2Channel Analog Multiplexer/Demultiplexer . . . . . . . . . . . . . . .MC14053B T i l 2 Ch l A l M lti l /D lti l

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    Device Function

    OR Gates

    MC14071B Quad 2Input OR Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    FlipFlops/Latches

    MC14042B Quad Transparent Latch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14043B Quad NOR RS Latch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14044B Quad NAND RS Latch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14076B Quad DType Register with TriState Outputs . . . . . . . . . . . . . . . . . . . .MC14175B Quad D FlipFlop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14013B Dual D FlipFlop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14027B Dual JK FlipFlop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14174B Hex D FlipFlop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14099B 8Bit Addressable Latch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14598B 8Bit BusCompatible Addressable Latch . . . . . . . . . . . . . . . . . . . . . . .

    Shift Registers

    MC14015B Dual 4Bit Static Shift Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14517B Dual 64Bit Static Shift Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14562B 128Bit Shift Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14557B 1to64 Bit Variable Length Shift Register . . . . . . . . . . . . . . . . . . . . . . . MC14014B 8Bit Static Shift Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14021B 8Bit Static Shift Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    MC14094B 8Stage Shift/Store Register with TriState Outputs . . . . . . . . . . . . . . .MC14549B Successive Approximation Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14559B Successive Approximation Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    Counters

    MC14017B Decade Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14018B Presettable DividebyN Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14020B 14Bit Binary Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14022B Octal Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14024B 7Stage Ripple Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14029B Presettable Binary/BCD Up/Down Counter . . . . . . . . . . . . . . . . . . . . . . MC14040B 12Bit Binary Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14060B 14Bit Binary Counter and Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14516B Presettable Binary Up/Down Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14518B Dual BCD Up Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14520B Dual Binary Up Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14526B Presettable 4Bit Binary Down Counter . . . . . . . . . . . . . . . . . . . . . . . . . MC14553B 3Digit BCD Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14569B Programmable Dual 4Bit Binary/BCD Counter . . . . . . . . . . . . . . . . . .

    Oscillators/TimersMC14521B 24Stage Frequency Divider . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14536B Programmable Timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14541B Programmable Oscillator/Timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    Multivibrators

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    CH

    Reliability Audit

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    Reliability Audit Program

    For Logic Integrated Circuits

    1.0 INTRODUCTIONThe Reliability Audit Program developed in March 1977

    is the ON Semiconductor internal reliability audit which isdesigned to assess outgoing product performance underaccelerated stress conditions. Logic Reliability Engineering

    has overall responsibility for RAP, including updating itsrequirements, interpreting its results, administration atoffshore locations, and monthly reporting of results. Thesereports are available at all sales offices. Also available is the

    Reliability and Quality Handbook wall ON Semiconductor devices (HBD

    RAP is a system of environmentaperformed periodically on randomly

    standard products. Each sample receiin section 2.0. Frequency of testing isdocument 12MRM15301A.

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    Pull 500* piece sample from lot following Group A

    acceptance.

    2.0 RAP TEST FLOW

    #One sample per month for FAST, LS, 10H, 10K, MG CMOS, and HSL CMOS.

    * PTHB or PTH not required for hermetic products: reduce total sample size to 450 pcs.

    **Seal (Fine & Gross Leak) required only for hermetic products.

    ***PTH to be used when sockets for PTHB are not available.

    PTHB

    48 HRS

    45* 340

    PTH***

    48 HRS

    INITIAL

    SEAL**

    TEMP CYCLES

    40 CYCLES

    SCRAP

    INTERIMTEST

    ADD 460 CYCLES

    INTERIM

    TEST

    ADD 500 CYCLES

    FINALINTERIM*

    TEST

    TEMP CYCLES#

    1000 CYCLES

    (ADDITIONAL)

    FINALELECTRICAL

    & SEAL**

    (2000 CYCLES)

    FINAL

    ELECTRICAL

    (96 HRS)

    FINAL

    ELECTRICAL

    (48 HRS)

    PTH

    48 HRS

    (ADDITIONAL)

    INTERIM

    ELECTRICAL

    SCRAP

    3.0 TEST CONDITIONS AND COMMENTS

    PTHB 15 psig/121C/100% RH at rated VCCor VEEto be performed on plastic encapsulated devicesonly.

    3. Sampling to include all package ty

    4. Device types sampled will be by gelogic I/C product family (CMOS

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    CH

    B and UB Series Fa

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    The CMOS Devices in this volume which have a B or UBsuffix meet the minimum values for the industry

    standardized* family specification. These standardizedvalues are shown in the Maximum Ratings and ElectricalCharacteristics Tables. In addition to a standard minimumspecification for characteristics the B/UB devices feature:

    318 volt operational limits Capable of driving two lowpower TTL loads or one

    lowpower Schottky TTL load over the ratedtemperature range

    Direct Interface to HighSpeed CMOS Maximum input current of 1 A at 15 volt power

    supply over the temperature range Parameters specified at 5.0, 10, and 15 volt supply Noise margins: B Series

    1.0 V min @ 5.0 V supply2.0 V min @ 10 V supply2.5 V min @ 15 V supply

    UB Series

    0.5 V min @ 5.0 V supply1.0 V min @ 10 V supply1.0 V min @ 15 V supply

    The industrystandardized maximum ratings are shown atthe bottom of this page. Limits for the static characteristicsare shown in two formats: Table 1 is in the industry formatand Table 2 is in the equivalent ON Semiconductor format.The ON Semiconductor format is used throughout this databook. Additional specification values are shown on theindividual data sheets.

    Switching characteristics for the B and UB series devicesare specified under the following conditions:

    Load Capacitance, CL, of 50 pFInput Voltage equal to VSS VDD(RailtoRailswing)Input pulse rise and fall times of 20 nsPropagation Delay times measured from 50% point of

    input voltage to 50% point of output voltageThree different supply voltages: 5, 10, and 15 V

    Exceptions to the B and UB Series FamilySpecification

    There are a number of devices which have a B or UB suffixwhose inputs and/or outputs vary somewhat from the family

    Devices with specialized inputs,inputs, have unique input specifi

    Input VoltageThe input voltage specification

    worstcase input voltage to produce an0. This 1 or 0 output level is dfrom the supply (VDD) and ground (Vsupply, this deviation is 0.5 V; for a 1for 15 V, 1.5 V. As an example, in a deV supply, the device with the input

    guaranteed to switch on or before 3.5 to 1.5 V. Switching and not switching0.5 V of the ideal output level for thesupply. The actual switching level rebetween 1.5 V and 3.5 V.

    Noise MarginThe values for input voltages an

    deviations lead to the calculated n

    margin is defined as the difference beVout(output deviation). As an exampbuffer at VDD= 5.0 volts: VIL= 1.5volts. Therefore, Noise Margin equalsThis figure is useful while cascading With the input to the first stage at a wo(VIL= 1.5 V), the output is guarantee0.5 volts with a 5.0 volt supply. allowable logic 0 for the second stag

    volt output provides a 1.0 volt margistage.

    Output Drive CurrentDevices in the B Series are capable

    of 0.36 mA over the temperature rangThis value guarantees that these CMone lowpower Schottky TTL input.

    B Series vs UB CMOS

    The primary difference between Bdevices is that UB series gates and invwith a single inverting stage betweendecreased gain caused by using a singnoise immunity and a transfer characte

    The decreased gain is quite useful w

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    MAXIMUM RATINGS* (Voltages Referenced to VSS)

    Symbol

    Parameters

    Value

    Unit

    VDD

    DC Supply Voltage

    0.5 to + 18.0

    V

    Vin, Vout

    Input or Output Voltage (DC or Transient)

    0.5 to VDD+ 0.5

    V

    Iin, lout

    Input or Output Current (DC or Transient), per Pin

    10

    mA

    PD

    Power Dissipation, per Package

    500

    mW

    Tstg

    Storage Temperature

    65 to + 150

    C

    TL

    Lead Temperature (8Second Soldering)

    260

    C

    * Maximum Ratings are those values values beyond which damage to the device may occur.

    Temperature Derating:

    Plastic P and D/DW Packages: 7.0 mW/C From 65

    C To 125

    C

    Ceramic L Packages: 12 mW/C From 100

    C To 125

    C

    VIL= 1.5 VVout= 0.5 V Vout

    5.0 V

    FIRST STAGE

    (NONINVERTING BUFFER)

    SECOND STAGE

    (NONINVERTING BUFFER)VIL= 1.5 V

    Figure 1.

    Table 1. EIA/JEDEC Format for CMOS Industry B and UB Series Specifications

    ELECTRICAL CHARACTERISTICS

    Limits

    Tem

    VDD

    TLOW*

    + 25C

    Parameter

    Range

    (Vdc)

    Conditions

    Min

    Max

    Min

    Max

    M

    IDD

    Quiescent

    Device Current

    Mil

    5

    10

    15

    Vin= VSSor VDD

    0.25

    0.5

    1.0

    0.25

    0.5

    1.0

    GATES

    Comm

    5

    10

    15

    All valid input

    combinations

    1.0

    2.0

    4.0

    1.0

    2.0

    4.0

    Mil

    5

    10

    15

    VIN= VSSor VDD

    1.0

    2.0

    4.0

    1.0

    2.0

    4.0

    BUFFERS,

    FLIPFLOPS

    Comm

    5

    1015

    All valid input

    combinations

    4

    816

    4.0

    8.016.0

    Mil

    5

    10

    15

    VIN= VSSor VDD

    5

    10

    20

    5

    10

    20

    MSI

    Comm

    5

    10

    All valid input

    combinations

    20

    40

    20

    40

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    Table 1. EIA/JEDEC Format for CMOS Industry B and UB Series Specifications (con

    ELECTRICAL CHARACTERISTICS

    Limits

    Conditions

    VDD(Vdc)

    TempRange

    Parameter

    + 25 C

    TLOW*

    Conditions

    VDD(Vdc)

    TempRange

    Parameter

    M

    Max

    Min

    Max

    Min

    Conditions

    VDD(Vdc)

    TempRange

    Parameter

    VIL

    Input

    Low Voltage#

    B Types

    All

    5

    10

    15

    VO= 0.5V or 4.5V

    VO = 1.0V or 9.0V

    VO= 1.5V or 13.5V

    |IO| < 1 A

    1.5

    3.0

    4.0

    1.5

    3.0

    4.0

    VIL

    Input

    Low Voltage#

    UB Types

    All

    5

    10

    15

    VO= 0.5V or 4.5V

    VO = 1.0V or 9.0V

    VO= 1.5V or 13.5V

    |IO| < 1 A

    1.0

    2.0

    2.5

    1.0

    2.0

    2.5

    VIH

    InputHigh Voltage#

    B Types

    All

    510

    15

    VO= 0.5V or 4.5VVO = 1.0V or 9.0V

    VO= 1.5V or 13.5V

    |IO| < 1 A

    3.57.0

    11.0

    3.57.0

    11.0

    37

    1

    VIH

    Input

    High Voltage#

    UB Types

    All

    5

    10

    15

    VO= 0.5V or 4.5V

    VO = 1.0V or 9.0V

    VO= 1.5V or 13.5V

    |IO| < 1 A

    4.0

    8.0

    12.5

    4.0

    8.0

    12.5

    4

    8

    12

    IOL

    Output Low

    (Sink) Current

    Mil

    5

    10

    15

    VO= 0.4V,

    VIN= 0 or 5V

    VO= 0.5V,VIN= 0 or 10V

    VO= 1.5V,

    VIN= 0 or 15V

    0.64

    1.6

    4.2

    0.51

    1.3

    3.4

    0.

    0

    2

    Com

    5

    10

    15

    VO= 0.4V,

    VIN= 0 or 5V

    VO= 0.5V,

    VIN= 0 or 10V

    VO= 1.5V,

    VIN= 0 or 15V

    0.52

    1.3

    3.6

    0.44

    1.1

    3.0

    0.

    0

    2

    IOH

    Output High(Source) Current

    Mil

    5

    10

    15

    VO= 4.6V,VIN= 0 or 5V

    VO= 9.5V,

    VIN= 0 or 10V

    VO= 13.5V,

    VIN= 0 or 15V

    0.25

    0.62

    1.8

    0.2

    0.5

    1.5

    0

    0

    Com

    5

    10

    15

    VO= 4.6V,

    VIN= 0 or 5V

    VO= 9.5V,

    VIN= 0 or 10V

    VO= 13.5VVIN= 0 or 15V

    0.2

    0.5

    1.4

    0.16

    0.4

    1.2

    0

    IIN

    Input Current

    Mil

    Comm

    15

    15

    VIN= 0 or 15V

    VIN= 0 or 15V

    0.1

    0.3

    0.1

    0.3

    Ioz

    3State Output

    Leakage Current

    Mil

    Comm

    15

    15

    VIN= 0 or 15V

    VIN= 0 or 15V

    0.4

    1.6

    0.4

    1.6

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    Table 2. ON Semiconductor Format for CMOS Industry B and UB Series Specificat

    ELECTRICAL CHARACTERISTICS

    VDD

    55C

    25C

    Characteristic

    Symbol

    Vdc

    Min

    Max

    Min

    Max

    M

    Output Voltage 0 LevelVin= VDDor 0

    VOL

    5.010

    15

    0.050.05

    0.05

    0.050.05

    0.05

    1 Level

    Vin= 0 or VDD

    VOH

    5.0

    10

    15

    4.95

    9.95

    14.95

    4.95

    9.95

    14.95

    4.

    9.

    14

    Input Voltage B Types 0 Level

    (VO= 4.5 or 0.5 Vdc)

    (VO= 9.0 or 1.0 Vdc)

    (VO= 13.5 or 1.5 Vdc)

    VIL

    5.0

    10

    15

    1.5

    3.0

    4.0

    1.5

    3.0

    4.0

    1 Level(VO= 0.5 or 4.5 Vdc)

    (VO= 1.0 or 9.0 Vdc)

    (VO= 1.5 or 13.5 Vdc)

    VIH

    5.0

    10

    15

    3.5

    7.0

    11

    3.5

    7.0

    11

    3

    7

    1

    Input Voltage UB Types 0 Level

    (VO= 4.5 or 0.5 Vdc)

    (VO= 9.0 or 1.0 Vdc)

    (VO= 13.5 or 1.5 Vdc)

    VIL

    5.0

    10

    15

    1.0

    2.0

    2.5

    1.0

    2.0

    2.5

    1 Level

    (VO= 0.5 or 4.5 Vdc)

    (VO= 1.0 or 9.0 Vdc)(VO= 1.5 or 13.5 Vdc)

    VIH

    5.0

    1015

    4.0

    8.012.5

    4.0

    8.012.5

    4

    812

    Output Drive Current B Gates

    (VOH= 2.5 Vdc) Source

    (VOH= 4.6 Vdc)

    (VOH= 9.5 Vdc)

    (VOH= 13.5 Vdc)

    IOH

    5.0

    5.0

    10

    15

    3.0

    0.64

    1.6

    4.2

    2.4

    0.51

    1.3

    3.4

    0

    0

    2

    (VOL= 0.4 Vdc) Sink

    (VOL= 0.5 Vdc)

    (VOL= 1.5 Vdc)

    IOL

    5.0

    10

    15

    0.64

    1.6

    4.2

    0.51

    1.3

    3.4

    0.

    0

    2

    Output Drive Current UB Gates(VOH= 2.5 Vdc) Source

    (VOH= 4.6 Vdc)

    (VOH= 9.5 Vdc)

    (VOH= 13.5 Vdc)

    IOH

    5.0

    5.0

    10

    15

    1.2

    0.25

    0.62

    1.8

    1.0

    0.2

    0.5

    1.5

    0

    0

    0

    (VOL= 0.4 Vdc) Sink

    (VOL= 0.5 Vdc)

    (VOL= 1.5 Vdc)

    IOL

    5.0

    10

    15

    0.64

    1.6

    4.2

    0.51

    1.3

    3.4

    0.

    0

    2

    Output Drive Current Other Devices

    (VOH= 4.6 Vdc) Source

    (VOH= 9.5 Vdc)(VOH= 13.5 Vdc)

    IOH

    5.0

    1015

    0.64

    1.6 4.2

    0.51

    1.3 3.4

    0

    0 2

    (VOL= 0.4 Vdc) Sink

    (VOL= 0.5 Vdc)

    (VOL= 1.5 Vdc)

    IOL

    5.0

    10

    15

    0.64

    1.6

    4.2

    0.51

    1.3

    3.4

    0.

    0

    2

    Input Current

    Iin

    15

    0.1

    0.1

    Input Capacitance (Vin= 0) Cin 7.5

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    CH

    CMOS Handling and Design G

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    HANDLING PRECAUTIONS

    All MOS devices have insulated gates that are subject tovoltage breakdown. The gate oxide for ON SemiconductorCMOS devices is about 900 thick and breaks down at agatesource potential of about 100 volts. To guard againstsuch a breakdown from static discharge or other voltagetransients, the protection networks shown in Figures 1A and1B are used on each input to the CMOS device.

    Static damaged devices behave in various ways,depending on the severity of the damage. The most severelydamaged inputs are the easiest to detect because the inputhas been completely destroyed and is either shorted to VDD,shorted to VSS, or opencircuited. The effect is that thedevice no longer responds to signals present at the damagedinput. Less severe cases are more difficult to detect becausethey show up as intermittent failures or as degradedperformance. Another effect of static damage is that theinputs generally have increased leakage currents.

    Although the input protection network does provide agreat deal of protection, CMOS devices are not immune tolarge static voltage discharges that can be generated duringhandling. For example, static voltages generated by a personwalking across a waxed floor have been measured in the415 kV range (depending on humidity, surface conditions,etc.). Therefore, the following precautions should beobserved:

    1. Do not exceed the Maximum Ratings specified by thedata sheet.

    2. All unused device inputs should be connected to VDDor VSS.

    3. All lowimpedance equipment (pulse generators,etc.) should be connected to CMOS inputs only afterthe device is powered up. Similarly, this type ofequipment should be disconnected before power isturned off.

    4. Circuit boards containing CMOS devices are merelyextensions of the devices, and the same handlingprecautions apply. Contacting edge connectors wireddirectly to device inputs can cause damage. Plasticwrapping should be avoided. When externalconnections to a PC board are connected to an input of

    a CMOS device, a resistor showith the input. This resistor h

    damage if the PC board is remcontact with static generating mfactor for the series resistor is thcaused by the time constant resistor and input capacitance. Ninput rise and fall times shoulFigure 2, two possible networseries resistor to reduce Discharge) damage. For conven

    added propagation delay and riseries resistance size is given.

    5. All CMOS devices should be smaterials that are antistatic. CMbe inserted into conventiostyrofoam, or plastic trays, butoriginal container until ready f

    6. All CMOS devices should be bench surface and operat

    themselves prior to handling decan be statically charged withsurface. Wrist straps in contactrecommended. See Figure 3 typical work station.

    7. Nylon or other static generatincome in contact with CMOS de

    8. If automatic handlers are beinstatic electricity may be genera

    of the device, the belts, or the buildup by using ionized ahumidifiers. All parts of machcontact with the top, bottom, omust be grounded to metal material.

    9. Cold chambers using CO2 foequipped with baffles, and the Ccontained on or in conductive m

    10. When leadstraightening ornecessary, provide ground strused and be sure that soldering

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    INPUT PROTECTION NETWORK

    Figure 1a. Input Protection Network

    Double Diode

    Figure 1b. Input Prot

    Triple Dio

    VDD VDD

    CMOS

    INPUTTO CIRCUIT

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    Figure 2. Networks for Minimizing ESD and Reducing

    CMOS Latch Up Susceptibility

    TO OFFBOARD

    CONNECTION

    R1CMOS

    INPUT

    OR

    OUTPUT

    TO OFFBOARD

    CONNECTION

    R2

    Advantage:

    Disadvantage:

    Requires minimal board area

    R1 > R2 for the same level of

    protection, therefore rise and fall

    times, propagation delays, and output

    drives are severely affected.

    Advantage:

    Disadvantage:

    R2 < R1 for the same

    level of protection.

    Impact on ac and dc

    characteristics is minimize

    More board area, higher i

    Note: These networks are useful for protecting the following

    A

    B

    digital inputs and outputs

    analog inputs and outputs

    C

    D

    3state outputs

    bidirectional (I/O) ports

    PROPAGATION DELAY AND RISE TIME

    vs. SERIES RESISTANCE

    R t

    C kwhere:

    R

    t

    C

    k

    k

    = the maximum allowable series resistance in ohms

    = the maximum tolerable propagation delay or rise time in seconds

    = the board capacitance plus the driven devices

    = input capacitance in farads= 0.7 for propagation delay calculations

    = 2.3 for rise time calculations

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    Figure 3. Typical Manufacturing Work Station

    RESISTOR =1 MEGAOHM

    1

    2

    3

    4

    5

    NOTES: 1. 1/16 inch conductive sheet

    top work area.

    2. Ground strap.

    3. Wrist strap in contact with s

    4. Static neutralizer. (Ionized

    work.) Primarily for use in

    grounding is impractical.

    5. Room humidifier. Primarily

    the relative humidity is les

    building heating and coolin

    the air causing the relativ

    buildings to be less than ou

    POWER SUPPLIES

    CMOS devices have low power requirements and theability to operate over a wide range of supply voltages.These two characteristics allow CMOS designs to beimplemented using inexpensive, conventional powersupplies, instead of switching power supplies and powersupplies with cooling fans. In addition, batteries may be usedas either a primary power source or for emergency backup.

    The absolutemaximum power supply voltage for 14000Series Metalgate CMOS is 18.0 Vdc. Figure 4 offers someinsight as to how this specification was derived. In thefigure, VSis the maximum power supply voltage and ISisthe sustaining current of the latchup mode. The value of VSwas chosen so that the secondary breakdown effect may beavoided.

    In an ideal system design, a power supply should bedesigned to deliver only enough current to insure properoperation of all devices. The obvious benefit of this typedesign is cost savings; an added benefit is protection against

    the possibility of latchup related protection can be provided by the powvoltage regulator.

    CMOS devices can be used with bat

    systems. A few precautions should bebatteryoperated systems:1. The recommended power supp

    observed. For battery backup syin Figure 5, the battery voltagVolts (3 Volts from the minvoltage and 0.7 Volts to accouacross the series diode).

    2. Inputs that might go above the b

    should either use a series resicurrent to less than 10 mA or usMC14050B hightolow volta

    3. Outputs that are subject to voltor below VSSshould be protecteto limit the current to less tclamping diodes.

    IDD

    LATCH

    UP MODE

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    Figure 5. Battery Backup Interface

    POWER SUPPLY

    LINE POWER ONLY

    SYSTEM

    CMOS

    SYSTEM

    MC14049UB

    MC14050B

    BATTERY BACKUP

    SYSTEM

    MC14049UB

    MC14050B

    BATT

    R

    CMOS

    SYSTEM

    INPUTS

    All inputs, while in the recommended operating range(VSS< Vin< VDD) can be modeled as shown in Figure 6. Forinput voltages in this range, diodes D1 and D2 are modeledas resistors, representing the reverse bias impedance of the

    diodes. The maximum input current is worst case, 1 A,when the inputs are at VDDor VSS, and VDD= 15.0 V. Thismodel does not apply to inputs with pullup or pulldownresistors.

    Figure 6. Input Model for VSS Vin VDD

    VDD

    R1

    7.5 pF

    R1 = R2 = HIGH Z

    R2

    When left opencircuited, the inputs may selfbias at ornear the typical switchpoint, where both the Pchannel andNchannel transistors are conducting, causing excessivecurrent drain Due to the high gain of the inverters (see

    Figure 7. Typical Transfer C

    for Buffered Devic

    5.0

    4.0

    3.0

    2.0

    1.0

    00 1.0 2.0 3.0 4.0

    Vin, INPUT VOLTAG

    Vout,

    OUTPUTVO

    LTAGE(V)

    VDD= 5.0 Vd

    SINGLE INPUT N

    MULTIPLE INPUT

    SINGLE INP

    MULTIPLE

    For these reasons, all unused inputeither to VDDor VSS. For applicationedge connectors, a 100 kilohm resisused, as well as a series resistor forcurrent limiting (Figure 8). The 100 ki

    eliminate any static charges that mprinted circuit board. See Figure protection arrangements.

    RSFROM

    EDGE

    CONNECTOR

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    For input voltages outside of the recommended operatingrange, the CMOS input is modeled as in Figure 9. Theresistordiode protection network allows the user greaterfreedom when designing a worst case system. The deviceinputs are guaranteed to withstand voltages from VSS 0.5

    V to VDD+ 0.5 V and a maximum current of 10 mA. Withthe above input ratings, most designs will require no specialterminations or design considerations.

    Figure 9. Input Model for Vin> VDDor Vin< VSS

    1.5 k

    D2 7.5 pF

    D1

    Other specifications that should be noted are themaximum input rise and fall times. Figure 10 shows the

    oscillations that may result from exceeding the 15 smaximum rise and fall time at VDD= 5.0 V, 5 s at 10 V, or4 s at 15 V. As the voltage passes through the switchingthreshold region with a slow rise time, any noise that is onthe input is amplified, and passed through to the output,causing oscillations. The oscillation may have a low enoughfrequency to cause succeeding stages to switch, givingunexpected results. If input rise or fall times are expected toexceed 15 s at 5.0 V, 5 s at 10 V, or 4 s at 15 V,

    Schmitttrigger devices such as the MC14093B,MC14584B, MC14106B, HC14, or HC132 arerecommended for squaringup these slow transitions.

    Vin

    Vout

    VDD

    VSS

    VOH

    VOL

    lout= 0A. The output drives for all buare such that 1 LSTTL load can be temperature range.

    CMOS outputs are limited to extvoltages of VSS 0.5 V Vout

    voltages are forced outside of this rangrectifier (SCR) formed by parasititriggered, causing the device to information on this, see the explanatioin this section.

    The maximum rated output curren10 mA. The output shortcircuit curtypically exceed these limits. Care exceed the maximum ratings found o

    For applications that require drivingwhere fast propagation delays are power MOSFETs), two or more outpmay be externally paralleled.

    CMOS LATCH UP

    Latch up will not be a problem fordesigner should be aware of it, what prevent it.

    Figure 11 shows the crosssectioinverter and Figure 12 shows the parThe circuit formed by the parasitic tris the basic configuration of a silicon SCR. In the latch up condition, transturned ON, each providing the base cuother to remain in saturation, thereby the ON state. Unlike a conventional Sis turned ON by applying a voltage ttransistor, the parasitic SCR is turnvoltage to the emitter of either transithat trigger the SCR are the same poiTherefore, to latch up the CMOS devmust be greater than VDD+ 0.5 V orand have sufficient current to trigger tmechanism is similar for the inputs.

    Once a CMOS device is latched upis not limited, the device will be destrsuch occurrences are listed below:

    1. Insure that inputs and outpumaximum rated values, as follo0.5 V Vinor Vout VDD+VSS) |Iinor Iout| 10 mA (unleon the data sheet)

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    series resistors may be used in plugin boardapplications).

    4. Voltage regulating or filtering should be used in boarddesign and layout to insure that powersupply linesare free of excessive noise.

    5. Limit the available power sdevices that are subject to latccan be accomplished with the pnetwork or with a currentlimi

    Figure 11. CMOS Wafer Cross Section

    VDD VDD

    PCHANNEL NCHANNEL

    INPUT

    OUTPUTPCHANNEL

    OUTPUT

    NCHANNEL

    OUTPUT

    VSS

    FIELD OXIDE FIELD OXIDE FIELN+ P+ P+ N+ N+ P+

    P WELLN SUBSTRATE

    Figure 12. Latch Up Circuit Schematic

    VSS

    VSS

    NCHANNEL OUTPUTNSUBSTRATE RESISTAN

    Q1

    N+

    P

    PCHANPWELL RESISTANCE

    N

    P+

    P

    N+ N

    P+Q2

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    CH

    CMOS Logic Da

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    MC14001B, MC14011B, MC14023B,MC14025B, MC14071B, MC14073B,MC14081B, MC14082B

    The B Series logic gates are constructed with P and N channelenhancement mode devices in a single monolithic structure(Complementary MOS). Their primary use is where low power

    dissipation and/or high noise immunity is desired. Supply Voltage Range = 3.0 Vdc to 18 Vdc All Outputs Buffered Capable of Driving Two Lowpower TTL Loads or One Lowpower

    Schottky TTL Load Over the Rated Temperature Range. Double Diode Protection on All Inputs Except: Triple Diode

    Protection on MC14011B and MC14081B PinforPin Replacements for Corresponding CD4000 Series B

    Suffix Devices

    MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 1.)

    Symbol Parameter Value Unit

    VDD DC Supply Voltage Range 0.5 to +18.0 V

    Vin, Vout Input or Output Voltage Range

    (DC or Transient)

    0.5 to VDD+ 0.5 V

    Iin, Iout Input or Output Current

    (DC or Transient) per Pin

    10 mA

    PD Power Dissipation,

    per Package (Note 2.)

    500 mW

    TA Ambient Temperature Range 55 to +125 C

    Tstg Storage Temperature Range 65 to +150 C

    TL Lead Temperature

    (8Second Soldering)

    260 C

    1. Maximum Ratings are those values beyond which damage to the device

    may occur.2. Temperature Derating:Plastic P and D/DW Packages: 7.0 mW/ C From 65 C To 125 C

    This device contains protection circuitry to guard against damage due to high

    static voltages or electric fields. However, precautions must be taken to avoid

    applications of any voltage higher than maximum rated voltages to this

    highimpedance circuit. For proper operation, Vinand Voutshould be constrained

    http://onsem

    Device D

    DEVICE INFO

    MC14001B Quad 2In

    MC14011B Quad 2In

    MC14023B Triple 3In

    MC14025B Triple 3 In

    PDIP14

    P SUFFI

    CASE 64

    SOIC1

    D SUFFI

    CASE 75

    TSSOP

    DT SUFF

    CASE 948

    XX = Specific

    A = Assemb

    WL or L = Wafer L

    YY or Y = Year

    WW or W = Work W

    SOEIAJ

    F SUFFI

    CASE 96

    MC14001B Series

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    LOGIC DIAGRAMS

    1

    2

    5

    6

    8

    9

    1213

    3

    4

    10

    11

    1

    2

    5

    6

    8

    9

    1213

    3

    4

    10

    11

    1

    2

    5

    6

    8

    9

    1213

    3

    4

    10

    11

    1

    2

    5

    6

    8

    9

    1213

    2INPUT

    12 9

    3INPUT

    8

    34 65

    1112 1013

    12 98

    34 65

    1112 1013

    12 98

    34 65

    1112 1013

    345

    2

    101112

    9

    VDD= PIN 14

    VSS= PIN 7

    FOR ALL DEVICES

    NOR

    MC14001B

    Quad 2Input NOR Gate

    MC14025B

    Triple 3Input NOR Gate

    MC14023B

    Triple 3Input NAND Gate

    NAND

    MC14011B

    Quad 2Input NAND Gate

    OR

    MC14071B

    Quad 2Input OR Gate Quad

    MC14073B

    Triple 3Input AND Gate Dua

    PIN ASSIGNMENTS

    11

    12

    13

    14

    8

    9

    105

    4

    3

    2

    1

    7

    6

    OUTC

    OUTD

    IN 1D

    IN 2D

    VDD

    IN 1C

    IN 2C

    OUTB

    OUTA

    IN 2A

    IN 1A

    VSS

    IN 2B

    IN 1B

    11

    12

    13

    14

    8

    9

    105

    4

    3

    2

    1

    7

    6

    OUTC

    OUTD

    IN 1D

    IN 2D

    VDD

    IN 1C

    IN 2C

    OUTB

    OUTA

    IN 2A

    IN 1A

    VSS

    IN 2B

    IN 1B

    11

    12

    13

    14

    8

    9

    105

    4

    3

    2

    1

    7

    6

    OUTC

    IN 1C

    IN 2C

    IN 3C

    VDD

    IN 3A

    OUTA

    IN 2B

    IN 1B

    IN 2A

    IN 1A

    VSS

    OUTB

    IN 3B

    IN 2B

    IN 1B

    IN 2A

    IN 1A

    VSS

    OUTB

    IN 3B

    141 VIN 1 141 VIN 1 141 VIN 1 OUT

    MC14023BTriple 3Input NAND GateMC14001BQuad 2Input NOR Gate MC14011BQuad 2Input NAND Gate

    Dual 4

    MC14081B

    Quad 2Input AND Gate

    Triple

    MC14071B

    Quad 2Input OR GateMC14073B

    Triple 3Input AND Gate

    MC14001B Series

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    ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)

    VDD

    55 C

    25 C

    Characteristic

    Symbol

    Vdc

    Min

    Max

    Min

    Typ (3.)

    Max

    M

    Output Voltage 0 Level

    Vin= VDDor 0

    VOL

    5.0

    1015

    0.05

    0.050.05

    0

    00

    0.05

    0.050.05

    1 Level

    Vin= 0 or VDD

    VOH

    5.0

    10

    15

    4.95

    9.95

    14.95

    4.95

    9.95

    14.95

    5.0

    10

    15

    4.

    9.

    14

    Input Voltage 0 Level

    (VO= 4.5 or 0.5 Vdc)

    (VO= 9.0 or 1.0 Vdc)

    (VO= 13.5 or 1.5 Vdc)

    VIL

    5.0

    10

    15

    1.5

    3.0

    4.0

    2.25

    4.50

    6.75

    1.5

    3.0

    4.0

    1 Level(VO= 0.5 or 4.5 Vdc)

    (VO= 1.0 or 9.0 Vdc)

    (VO= 1.5 or 13.5 Vdc)

    VIH

    5.0

    10

    15

    3.5

    7.0

    11

    3.5

    7.0

    11

    2.75

    5.50

    8.25

    3

    7

    1

    Output Drive Current

    (VOH= 2.5 Vdc) Source

    (VOH= 4.6 Vdc)

    (VOH= 9.5 Vdc)

    (VOH= 13.5 Vdc)

    IOH

    5.0

    5.0

    10

    15

    3.0

    0.64

    1.6

    4.2

    2.4

    0.51

    1.3

    3.4

    4.2

    0.88

    2.25

    8.8

    0

    (VOL= 0.4 Vdc) Sink

    (VOL= 0.5 Vdc)(VOL= 1.5 Vdc)

    IOL

    5.0

    1015

    0.64

    1.64.2

    0.51

    1.33.4

    0.88

    2.258.8

    0.

    02

    Input Current

    Iin

    15

    0.1

    0.00001

    0.1

    Input Capacitance

    (Vin= 0)

    Cin

    5.0

    7.5

    Quiescent Current

    (Per Package)

    IDD

    5.0

    10

    15

    0.25

    0.5

    1.0

    0.0005

    0.0010

    0.0015

    0.25

    0.5

    1.0

    Total Supply Current (4.)(5.)

    (Dynamic plus Quiescent,

    Per Gate, CL= 50 pF)

    IT

    5.0

    10

    15

    IT= (0.3 A/kHz) f + I

    DD/N

    IT= (0.6 A/kHz) f + IDD/N

    IT= (0.9 A/kHz) f + IDD/N

    3. Data labelled Typ is not to be used for design purposes but is intended as an indication of the ICs potential pe4. The formulas given are for the typical characteristics only at 25 C.5. To calculate total supply current at loads other than 50 pF:

    IT(CL) = IT(50 pF) + (CL 50) Vfk

    where: ITis in A (per package), CLin pF, V = (VDD VSS) in volts, f in kHz is input frequency, and k = 0.001 x the nu

    per package.

    MC14001B Series

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    BSERIES GATE SWITCHING TIMES

    SWITCHING CHARACTERISTICS (6.)(CL= 50 pF, TA= 25 C)

    Characteristic

    Symbol

    VDDVdc

    Min

    Typ (7.)

    Output Rise Time, All BSeries Gates

    tTLH= (1.35 ns/pF) CL+ 33 ns

    tTLH= (0.60 ns/pF) CL+ 20 ns

    tTLH= (0.40 ns/PF) CL+ 20 ns

    tTLH

    5.0

    10

    15

    100

    50

    40

    Output Fall Time, All BSeries Gates

    tTHL= (1.35 ns/pF) CL+ 33 ns

    tTHL= (0.60 ns/pF) CL+ 20 ns

    tTHL= (0.40 ns/pF) CL+ 20 ns

    tTHL

    5.0

    10

    15

    100

    50

    40

    Propagation Delay Time

    MC14001B, MC14011B only

    tPLH, tPHL= (0.90 ns/pF) CL+ 80 ns

    tPLH, tPHL= (0.36 ns/pF) CL+ 32 ns

    tPLH, tPHL= (0.26 ns/pF) CL+ 27 ns

    All Other 2, 3, and 4 Input Gates

    tPLH, tPHL= (0.90 ns/pF) CL+ 115 ns

    tPLH, tPHL= (0.36 ns/pF) CL+ 47 ns

    tPLH, tPHL= (0.26 ns/pF) CL+ 37 ns

    8Input Gates (MC14068B, MC14078B)

    tPLH, tPHL= (0.90 ns/pF) CL+ 155 ns

    tPLH

    , tPHL

    = (0.36 ns/pF) CL+ 62 ns

    tPLH, tPHL= (0.26 ns/pF) CL+ 47 ns

    tPLH, tPHL

    5.0

    10

    15

    5.0

    10

    15

    5.0

    10

    15

    125

    50

    40

    160

    65

    50

    200

    80

    60

    6. The formulas given are for the typical characteristics only at 25 C.7. Data labelled Typ is not to be used for design purposes but is intended as an indication of the ICs potential pe

    VDD14

    CL

    VSS7

    PULSEGENERATOR

    INPUT

    OUTPUT

    90%50%

    10%

    10%50%

    90%

    20 ns 2

    tPHL

    tTHL

    INPUT

    OUTPUT

    INVERTING

    *All unused inputs of AND, NAND gates must be connected to VDD.

    All unused inputs of OR, NOR gates must be connected to VSS.

    90%50%10%

    OUTPUT

    NONINVERTING

    tTLH

    tPLH

    *

    Figure 1. Switching Time Test Circuit and Waveforms

    MC14001B Series

    CIRCUIT SCHEMATIC

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    CIRCUIT SCHEMATICNOR, OR GATES

    14

    *

    7VSS

    3, 4, 10, 11

    VDD

    VSS

    VDD

    *Inverter omitted in MC14001B

    1, 6, 8, 13

    2, 5, 9, 12

    1, 3, 11

    2, 4, 12

    VSS

    VDD

    VSS

    VDD

    8, 5, 13

    MC14001B, MC14071B

    One of Four Gates Shown

    MC14025B

    One of Three Gates

    *Inverter omitted

    CIRCUIT SCHEMATICNAND, AND GATES

    *

    *Inverter omitted in

    14

    *

    9, 6, 10

    VDD2, 5, 9, 12

    1, 6, 8, 13

    2, 4, 12

    1, 3, 11

    VDD

    VDD

    VSS

    8, 5, 13

    MC14011B, MC14

    One of Four Gates

    MC14023B, MC14073B

    One of Three Gates Shown

    MC14001B Series

    TYPICAL B SERIES GATE CHARACTERISTICS

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    TYPICAL BSERIES GATE CHARACTERISTICS

    NCHANNEL DRAIN CURRENT (SINK) PCHANNEL DRAIN CURR

    Figure 2. VGS= 5.0 Vdc Figure 3. VGS=

    1.0

    3.0

    5.0

    4.0

    2.0

    01.0 3.0 5.04.02.00

    VDS, DRAINTOSOURCE VOLTAGE (Vdc)

    1.0

    00

    TA= 55C

    Figure 4. VGS= 10 Vdc Figure 5. VGS=

    16

    14

    12

    10

    8.0

    6.0

    4.0

    2.0

    05.03.01.0 108.06.04.02.00

    00

    40C

    + 25C+ 85C

    + 125C

    1.0 3 2.0

    VDS, DRAINTOSOURCE V

    TA= 55C

    40C

    + 25C+ 85C

    + 125C

    VDS, DRAINTOSOURCE VOLTAGE (Vdc) VDS, DRAINTOSOURCE V

    18

    20

    9.07.0 5.0 3.0 1.0 6 4.0 2.0

    40

    35

    30

    25

    20

    15

    10

    5.0

    45

    50

    TA= 55C

    40C

    + 25C+ 85C

    80 70

    60

    50

    40

    90

    100

    4035

    30

    25

    20

    45

    50

    TA

    2.0

    3.0

    4.0

    5.0

    6.0

    7.0

    8.0

    9.0

    10

    I,

    D

    DRAINCURRENT(mA)

    I,

    D

    DRAINCURRENT(mA)

    I,

    D

    DRAINCURRENT(mA)

    I,

    D

    DRAINCURRENT(mA)

    AINCURRENT(mA)

    AINCURRENT(mA)

    + 125C

    MC14001B Series

    TYPICAL B SERIES GATE CHARACTERISTICS (contd)

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    TYPICAL BSERIES GATE CHARACTERISTICS (cont d)

    VOLTAGE TRANSFER CHARACTERISTICS

    Figure 8. VDD= 5.0 Vdc Figure 9. VDD=

    1.0

    3.0

    5.0

    4.0

    2.0

    01.0 3.0 5.04.02.00

    00

    Vin, INPUT VOLTAGE (Vdc)

    SINGLE INPUT NAND, AND

    MULTIPLE INPUT NOR, OR

    SINGLE INPUT NOR, OR

    MULTIPLE INPUT NAND, AND

    SINGLE INP

    MULTIPLE I

    SINGLE

    MULTIPL

    2.0

    6.0

    10

    8.0

    4.0

    2.0 6.0 8.04.0

    Vin, INPUT VOLTAG

    V

    ,

    out

    OUTPUTVOLTAGE(Vdc)

    V

    ,

    out

    OUTPUTVOLTAGE(Vdc)

    Figure 10. VDD= 15 Vdc

    00

    SINGLE INPUT NAND, AND

    MULTIPLE INPUT NOR, OR

    SINGLE INPUT NOR, OR

    MULTIPLE INPUT NAND, AND

    2.0

    6.0

    10

    8.0

    4.0

    2.0 6.0 108.04.0

    Vin, INPUT VOLTAGE (Vdc)

    12

    14

    16

    V

    ,

    out

    OUTPUTVOLTAGE(Vd

    c)

    DC NOISE MARG

    The DC noise margin is defined as t

    from an ideal 1 or 0 input level woutput state change(s). The typical values of the input values VILand Vbe at a fixed voltage VO are givCharacteristics table. VILand VIHarein Figure 11.

    Guaranteed minimum noise margin0 levels =

    1.0 V with a 5.0 V supply

    2.0 V with a 10.0 V supply

    2.5 V with a 15.0 V supply

    Vout

    VO

    VO

    VDD

    VDD Vout

    VO

    VO

    VDD

    VDD

    MC14001B Series

    ORDERING & SHIPPING INFORMATION: ORDERING & SHIPPING INFORMA

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    ORDERING & SHIPPING INFORMATION:

    Device Package Shipping

    MC14001BCP PDIP14 2000 Units per Box

    MC14001BD SOIC14 2750 Units per Box

    MC14001BDR2 SOIC14 2500 Units / Tape & Reel

    MC14001BDT TSSOP14 96 Units per Rail

    MC14001BDTR2 TSSOP14 96 Units per Rail

    MC14011BCP PDIP14 2000 Units per Box

    MC14011BD SOIC14 2750 Units per Box

    MC14011BDR2 SOIC14 2500 Units / Tape & Reel

    MC14011BDT TSSOP14 96 Units per Rail

    MC14011BDTEL TSSOP14 2000 Units / Tape & Reel

    MC14011BDTR2 TSSOP14 50 Units per Rail

    MC14023BCP PDIP14 2000 Units per Box

    MC14023BD SOIC14 2750 Units per Box

    MC14023BDR2 SOIC14 2500 Units / Tape & Reel

    MC14025BCP PDIP14 2000 Units per Box

    MC14025BD SOIC14 2750 Units per Box

    MC14025BDR2 SOIC14 2500 Units / Tape & Reel

    ORDERING & SHIPPING INFORMA

    Device Package

    MC14071BCP PDIP14

    MC14071BD SOIC14

    MC14071BDR2 SOIC14 250

    MC14071BDT TSSOP14

    MC14071BDTR2 TSSOP14

    MC14073BCP PDIP14

    MC14073BD SOIC14

    MC14073BDR2 SOIC14 250

    MC14081BCP PDIP14

    MC14081BD SOIC14

    MC14081BDR2 SOIC14 250

    MC14081BDT TSSOP14

    MC14081BDTR2 TSSOP14 250

    MC14082BCP PDIP14

    MC14082BD SOIC14

    MC14082BDR2 SOIC14 250

    For ordering information on the EIAJ versages, please contact your local ON Semitive.

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    The UB Series logic gates are constructed with P and N channelenhancement mode devices in a single monolithic structure(Complementary MOS). Their primary use is where low powerdissipation and/or high noise immunity is desired. The UB set ofCMOS gates are inverting nonbuffered functions.

    Supply Voltage Range = 3.0 Vdc to 18 Vdc

    Linear and Oscillator Applications Capable of Driving Two Lowpower TTL Loads or One LowpowerSchottky TTL Load Over the Rated Temperature Range

    Double Diode Protection on All Inputs PinforPin Replacements for Corresponding CD4000 Series UB

    Suffix Devices

    MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 1.)

    Symbol Parameter Value Unit

    VDD DC Supply Voltage Range 0.5 to +18.0 V

    Vin, Vout Input or Output Voltage Range

    (DC or Transient)

    0.5 to VDD+ 0.5 V

    Iin, Iout Input or Output Current

    (DC or Transient) per Pin

    10 mA

    PD

    Power Dissipation,

    per Package (Note 2.)

    500 mW

    TA Ambient Temperature Range 55 to +125 C

    Tstg Storage Temperature Range 65 to +150 C

    TL Lead Temperature

    (8Second Soldering)

    260 C

    1. Maximum Ratings are those values beyond which damage to the devicemay occur.

    2. Temperature Derating:

    Plastic P and D/DW Packages: 7.0 mW/

    C From 65

    C To 125

    C

    This device contains protection circuitry to guard against damage due to high

    static voltages or electric fields. However, precautions must be taken to avoid

    applications of any voltage higher than maximum rated voltages to this

    highimpedance circuit. For proper operation, Vinand Voutshould be constrained

    to the range VSS (Vinor Vout) VDD.

    Unused inputs must always be tied to an appropriate logic voltage level (e g

    http://onsem

    PDIP14P SUFFI

    CASE 64

    SOIC1

    D SUFFI

    CASE 75

    XX = Specific

    A = Assemb

    WL or L = Wafer L

    YY or Y = Year

    WW or W = Work W

    Device Packag

    ORDERING INF

    MC14001UBCP PDIP1

    MC14001UBD SOIC1

    MC1400

    Quad 2InputMC1401

    Quad 2Input

    MC14001UB, MC14011UB

    LOGIC DIAGRAMS

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    MC14001UB

    Quad 2Input

    NOR Gate

    MC14011UB

    Quad 2Input

    NAND Gate

    VDD= PIN 14VSS= PIN 7

    FOR ALL DEVICES

    13

    12

    9

    8

    6

    5

    21 3

    4

    10

    1113

    129

    86

    521 3

    4

    10

    11

    PIN ASSIGNMENTS

    11

    12

    13

    14

    8

    9

    105

    4

    3

    2

    1

    7

    6

    OUTC

    OUTD

    IN 1D

    IN 2D

    VDD

    IN 1C

    IN 2C

    OUTB

    OUTA

    IN 2A

    IN 1A

    VSS

    IN 2B

    IN 1B

    11

    12

    13

    14

    8

    9

    105

    4

    3

    2

    1

    7

    6

    OUTC

    OUTD

    IN 1D

    IN 2D

    VDD

    IN 1C

    IN 2C

    OUTB

    OUTA

    IN 2A

    IN 1A

    VSS

    IN 2B

    IN 1B

    MC14001UBQuad 2Input NOR Gate

    MC14011UBQuad 2Input NAND Gate

    MC14001UB, MC14011UB

    ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)

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    VDD

    55 C

    25 C

    Characteristic

    Symbol

    Vdc

    Min

    Max

    Min

    Typ (3.)

    Max

    M

    Output Voltage 0 Level

    Vin

    = VDD

    or 0

    VOL

    5.0

    10

    15

    0.05

    0.05

    0.05

    0

    0

    0

    0.05

    0.05

    0.05

    Vin= 0 or VDD 1 Level

    VOH

    5.0

    10

    15

    4.95

    9.95

    14.95

    4.95

    9.95

    14.95

    5.0

    10

    15

    4

    9

    14

    Input Voltage 0 Level

    (VO= 4.5 Vdc)

    (VO= 9.0 Vdc)

    (VO= 13.5 Vdc)

    VIL

    5.0

    10

    15

    1.0

    2.0

    2.5

    2.25

    4.50

    6.75

    1.0

    2.0

    2.5

    (VO

    = 0.5 Vdc) 1 Level

    (VO= 1.0 Vdc)

    (VO= 1.5 Vdc)

    IIH

    5.0

    10

    15

    4.0

    8.0

    12.5

    4.0

    8.0

    12.5

    2.75

    5.50

    8.25

    4

    8

    1

    Output Drive Current

    (VOH= 2.5 Vdc) Source

    (VOH= 4.6 Vdc)

    (VOH= 9.5 Vdc)

    (VOH= 13.5 Vdc)

    IOH

    5.0

    5.0

    10

    15

    1.2

    0.25

    0.62

    1.8

    1.0

    0.2

    0.5

    1.5

    1.7

    0.36

    0.9

    3.5

    0

    0

    (VOL= 0.4 Vdc) Sink

    (VOL= 0.5 Vdc)

    (VOL= 1.5 Vdc)

    IOL

    5.0

    10

    15

    0.64

    1.6

    4.2

    0.51

    1.3

    3.4

    0.88

    2.25

    8.8

    0

    0

    2

    Input Current

    Iin

    15

    0.1

    0.00001

    0.1

    Input Capacitance

    (Vin= 0)

    Cin

    5.0

    7.5

    Quiescent Current

    (Per Package)

    IDD

    5.0

    10

    15

    0.25

    0.5

    1.0

    0.0005

    0.0010

    0.0015

    0.25

    0.5

    1.0

    Total Supply Current (4.)(5.)

    (Dynamic plus Quiescent,

    Per Gate CL= 50 pF)

    IT

    5.0

    10

    15

    IT= (0.3 A/kHz) f + IDD/N

    IT= (0.6 A/kHz) f + IDD/N

    IT= (0.8 A/kHz) f + IDD/N

    3. Data labelled Typ is not to be used for design purposes but is intended as an indication of the ICs potential pe4. The formulas given are for the typical characteristics only at 25

    C.

    5. To calculate total supply current at loads other than 50 pF:

    IT(CL) = IT(50 pF) + (CL 50) Vfk

    where: ITis in H (per package), CLin pF, V = (VDD VSS) in volts, f in kHz is input frequency, and k = 0.001 x the nu

    per package.

    MC14001UB, MC14011UB

    SWITCHING CHARACTERISTICS (6.)(CL= 50 pF, TA= 25 C)

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    Characteristic

    Symbol

    VDDVdc

    Min

    Typ (7.)

    Output Rise Time

    tTLH= (3.0 ns/pF) CL+ 30 ns

    tTLH= (1.5 ns/pF) CL+ 15 nstTLH= (1.1 ns/pF) CL+ 10 ns

    tTLH

    5.0

    1015

    180

    9065

    Output Fall Time

    tTHL= (1.5 ns/pF) CL+ 25 ns

    tTHL= (0.75 ns/pF) CL+ 12.5 ns

    tTHL= (0.55 ns/pF) CL+ 9.5 ns

    tTHL

    5.0

    10

    15

    100

    50

    40

    Propagation Delay Time

    tPLH, tPHL= (1.7 ns/pF) CL+ 30 ns

    tPLH, tPHL= (0.66 ns/pF) CL+ 22 ns

    tPLH, tPHL= (0.50 ns/pF) CL+ 15 ns

    tPLH, tPHL

    5.0

    10

    15

    90

    50

    40

    6. The formulas given are for the typical characteristics only at 25 C.7. Data labelled Typ is not to be used for design purposes but is intended as an indication of the ICs potential pe

    Figure 1. Switching Time Test Circuit and Waveforms

    VDD14

    VSS

    OUTPUT

    CL

    INPUT

    *

    7

    PULSEGENERATOR

    20 ns

    INPUT

    OUTPUT

    INVERTING

    tPHL

    90%50%

    10%

    90%50%

    10%

    tTHL*All unused inputs of AND, NAND gates must be

    connected to VDD.

    All unused inputs of OR, NOR gates must be

    connected to VSS.

    MC14001UB, MC14011UB

    MC14001UB CIRCUIT SCHEMATIC MC14011UB CIRCUIT

    (1/4 of Device S

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    14 103

    VDD

    6

    5

    2

    1

    VSS

    4 7 11

    12

    13

    9

    8

    (1/4 of Device S

    2, 5, 9, 12

    1, 6, 8, 13

    7 V

    14 V

    Figure 2. Typical Voltage and

    Current Transfer Characteristics

    Figure 3. Typical Voltage Transfe

    Characteristics versus

    Temperature

    Vout,

    OUTPUTVOLTA

    GE(Vdc)

    16

    14

    12

    10

    8.0

    6.0

    4.0

    2.0

    00 2.0 4.0 6.0 8.0 10 12 14 16

    8.0

    6.0

    4.0

    2.0

    0

    ID,

    DRAINCURRENT

    (mAdc)

    Vin, INPUT VOLTAGE (Vdc)

    Vout,

    OUTPUTVOLTA

    GE(Vdc)

    16

    14

    12

    10

    8.0

    6.0

    4.0

    2.0

    00 2.0 4.0 6.0 8.0 10 12 14 16

    Vin, INPUT VOLTAGE (Vdc)

    AINCURRENT(mAdc

    )

    6.0

    4.0

    2.0

    0

    AINCURRENT(mAdc

    )

    4.0

    6.0

    8.0

    10

    TA= 55C

    TA= +25C

    TA= +125C

    a

    b

    c

    VGS= 5.0 Vdcb

    c

    a

    c

    a

    b

    c a

    b

    c

    VGS= 1

    15 Vdc

    VDD= 15 Vdc

    TA= +125CTA= 55C

    ab

    a

    b

    TA= +25C

    Unused input

    connected to

    VSS.

    One input only

    Both inputs10 Vdc

    5.0 Vdc

    b a

    b a

    b a

    15 Vdc

    10 Vdc

    Unused input

    connected to

    VSS.

    VDD= 15 Vdc

    ba

    a b

    a b

    5.0 Vdc

    10 Vdc

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    The MC14007UB multipurpose device consists of threeNchannel and three Pchannel enhancement mode devices packagedto provide access to each device. These versatile parts are useful ininverter circuits, pulseshapers, linear amplifiers, high inputimpedance amplifiers, threshold detectors, transmission gating, andfunctional gating.

    Diode Protection on All Inputs

    Supply Voltage Range = 3.0 Vdc to 18 Vdc Capable of Driving Two Lowpower TTL Loads or One Lowpower

    Schottky TTL Load Over the Rated Temperature Range PinforPin Replacement for CD4007A or CD4007UB This device has 2 outputs without ESD Protection. Antistatic

    precautions must be taken.

    MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)

    Symbol Parameter Value Unit

    VDD DC Supply Voltage Range 0.5 to +18.0 V

    Vin, Vout Input or Output Voltage Range

    (DC or Transient)

    0.5 to VDD+ 0.5 V

    Iin, Iout Input or Output Current

    (DC or Transient) per Pin

    10 mA

    PD Power Dissipation,

    per Package (Note 3.)

    500 mW

    TA Ambient Temperature Range 55 to +125 C

    Tstg Storage Temperature Range 65 to +150 C

    TL Lead Temperature

    (8Second Soldering)

    260 C

    2. Maximum Ratings are those values beyond which damage to the devicemay occur.

    3. Temperature Derating:Plastic P and D/DW Packages: 7.0 mW/ C From 65 C To 125 C

    This device contains protection circuitry to guard against damage due to high

    static voltages or electric fields. However, precautions must be taken to avoid

    applications of any voltage higher than maximum rated voltages to this

    highimpedance circuit. For proper operation, Vinand Voutshould be constrained

    t th V (V V ) V

    http://onsem

    A = Assemb

    WL or L = Wafer L

    YY or Y = Year

    WW or W = Work W

    Device Packag

    ORDERING INF

    MC14007UBCP PDIP

    MC14007UBD SOIC

    MC14007UBDR2 SOIC

    PDIP14

    P SUFFIX

    CASE 64

    SOIC14

    D SUFFIX

    CASE 751

    TSSOP1

    DT SUFF

    CASE 948

    SOEIAJ1

    F SUFFIX

    CASE 96

    MC14007UB

    PIN ASSIGNMENT

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    A

    B

    C

    INPUT

    INPUT

    A

    B

    C

    12

    1

    3

    5

    9

    2

    4

    11

    10

    14

    VDD

    6 8

    13INPUT OUTPUT CONDITION

    11

    12

    13

    14

    8

    9

    105

    4

    3

    2

    1

    7

    6

    GATEC

    SPC

    OUTC

    DPA

    VDD

    DNA

    SNC

    SNB

    GATEB

    SPB

    DPB

    VSS

    GATEA

    DNB

    D = DRAIN

    S = SOURCE

    SCHEMATIC

    14 13 2 1 11

    126

    7 8 3 4 5 10 9

    VDD= PIN 14

    VSS= PIN 7

    MC14007UB

    ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)

    55 C 25 C

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    VDD

    55 C

    25 C

    Characteristic

    Symbol

    Vdc

    Min

    Max

    Min

    Typ (4.)

    Max

    M

    Output Voltage 0 Level

    Vin= VDDor 0

    VOL

    5.0

    10

    15

    0.05

    0.05

    0.05

    0

    0

    0

    0.05

    0.05

    0.05

    Vin= 0 or VDD 1 Level

    VOH

    5.0

    10

    15

    4.95

    9.95

    14.95

    4.95

    9.95

    14.95

    5.0

    10

    15

    4.

    9.

    14

    Input Voltage 0 Level

    (VO= 4.5 Vdc)

    (VO= 9.0 Vdc)

    (VO= 13.5 Vdc)

    VIL

    5.0

    10

    15

    1.0

    2.0

    2.5

    2.25

    4.50

    6.75

    1.0

    2.0

    2.5

    (VO= 0.5 Vdc) 1 Level

    (VO= 1.0 Vdc)

    (VO= 1.5 Vdc)

    VIH

    5.0

    10

    15

    4.0

    8.0

    12.5

    4.0

    8.0

    12.5

    2.75

    5.50

    8.25

    4

    8

    12

    Output Drive Current

    (VOH= 2.5 Vdc) Source

    (VOH= 4.6 Vdc)

    (VOH= 9.5 Vdc)

    (VOH= 13.5 Vdc)

    IOH

    5.0

    5.0

    10

    15

    3.0

    0.64

    1.6

    4.2

    2.4

    0.51

    1.3

    3.4

    5.0

    1.0

    2.5

    10

    0

    (VOL= 0.4 Vdc) Sink

    (VOL= 0.5 Vdc)

    (VOL= 1.5 Vdc)

    IOL

    5.0

    10

    15

    0.64

    1.6

    4.2

    0.51

    1.3

    3.4

    1.0

    2.5

    10

    0.

    0

    2

    Input Current

    Iin

    15

    0.1

    0.00001

    0.1

    Input Capacitance

    (Vin= 0)

    Cin

    5.0

    7.5

    Quiescent Current

    (Per Package)

    IDD

    5.0

    10

    15

    0.25

    0.5

    1.0

    0.0005

    0.0010

    0.0015

    0.25

    0.5

    1.0

    Total Supply Current (5.)(6.)

    (Dynamic plus Quiescent,

    Per Gate) (CL= 50 pF)

    IT

    5.0

    10

    15

    IT= (0.7 A/kHz) f + IDD/6

    IT= (1.4 A/kHz) f + IDD/6

    IT= (2.2 A/kHz) f + IDD/6

    4. Data labelled Typ is not to be used for design purposes but is intended as an indication of the ICs potential pe5. The formulas given are for the typical characteristics only at 25 C.6. To calculate total supply current at loads other than 50 pF:

    IT(CL) = IT(50 pF) + (CL 50) Vfk

    where: ITis in A (per package), CLin pF, V = (VDD VSS) in volts, f in kHz is input frequency, and k = 0.003.

    MC14007UB

    SWITCHING CHARACTERISTICS (7.)(CL= 50 pF, TA= 25 C)

    V

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    Characteristic

    Symbol

    VDDVdc

    Min

    Typ (8.)

    Output Rise Time

    tTLH= (1.2 ns/pF) CL+ 30 ns

    tTLH= (0.5 ns/pF) CL+ 20 nstTLH= (0.4 ns/pF) CL+ 15 ns

    tTLH

    5.0

    1015

    90

    4535

    Output Fall Time

    tTHL= (1.2 ns/pF) CL+ 15 ns

    tTHL= (0.5 ns/pF) CL+ 15 ns

    tTHL= (0.4 ns/pF) CL+ 10 ns

    tTHL

    5.0

    10

    15

    75

    40

    30

    TurnOff Delay Time

    tPLH= (1.5 ns/pF) CL+ 35 ns

    tPLH= (0.2 ns/pF) CL+ 20 ns

    tPLH= (0.15 ns/pF) CL+ 17.5 ns

    tPLH

    5.0

    10

    15

    60

    30

    25

    TurnOn Delay Time

    tPHL= (1.0 ns/pF) CL+ 10 ns

    tPHL= (0.3 ns/pF) CL+ 15 ns

    tPHL= (0.2 ns/pF) CL+ 15 ns

    tPHL

    5.0

    10

    15

    60

    30

    25

    7. The formulas given are for the typical characteristics only. Switching specifications are for device connected as a8. Data labelled Typ is not to be used for design purposes but is intended as an indication of the ICs potential pe

    VDD= VGS VDD= VGS

    1414VDS= VOH VDD

    VSSVSS7

    7

    IOHIO

    IOH,

    DRAINCU

    RRENT(mAdc)

    IOL,

    DRAINCU

    RRENT(mAdc)

    0

    4.0

    8.0

    12

    16

    20

    16

    12

    8.0

    4.0

    TA= 55C

    TA= +25C

    TA= +125C

    a

    b

    c

    VGS= 5.0 Vdc b

    c

    a

    10 Vdc 15 Vdc

    c

    bc

    b

    a

    a

    ab

    c

    a

    b c

    ab

    c5.0

    VGS= 15 Vdc

    10 Vdc

    All unused inputs connected to ground. All unused inputs connect

    MC14007UB

    VDD20 ns

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    Figure 4. Switching Time and Power Dissipation Test Circuit and Waveforms

    PULSE

    GENERATOR

    500F0.01 F

    CERAMIC

    14

    CL

    Vout

    VSS7

    Vin

    ID Vin

    Vout

    90%50%10%

    90%50%10%

    tTHL t

    tPHL

    APPLICATIONS

    The MC14007UB dual pair plus inverter, which hasaccess to all its elements offers a number of unique circuitapplications. Figures 1, 5, and 6 are a few examples of thedevice flexibility.

    Figure 5. 3State Buffer

    + VDD

    DISABLE 3

    INPUT 10

    DISABLE 6

    12 OUTPUT

    11

    1

    2

    9

    8

    7

    INPUT DISABLE OUTPUT

    1

    0

    X

    0

    0

    1

    0

    1

    OPEN

    X = Dont Care

    Figure 6. AOI Functions Usi

    VDD

    14

    13

    11

    10

    3

    6

    B

    C

    A

    9

    5

    4

    8

    7

    O

    Substrates of Pchannel devices intern

    Substrates of Nchannel devices intern

    12

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    The MC14008B 4bit full adder is constructed with MOSPchannel and Nchannel enhancement mode devices in a singlemonolithic structure. This device consists of four full adders with fastinternal lookahead carry output. It is useful in binary addition andother arithmetic applications. The fast parallel carry output bit allowshighspeed operation when used with other adders in a system.

    LookAhead Carry Output Diode Protection on All Inputs

    All Outputs Buffered Supply Voltage Range = 3.0 Vdc to 18 Vdc Capable of Driving Two Lowpower TTL Loads or One Lowpower

    Schottky TTL Load Over the Rated Temperature Range PinforPin Replacement for CD4008B

    MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)Symbol Parameter Value Unit

    VDD DC Supply Voltage Range 0.5 to +18.0 V

    Vin, Vout Input or Output Voltage Range

    (DC or Transient)

    0.5 to VDD+ 0.5 V

    Iin, Iout Input or Output Current

    (DC or Transient) per Pin

    10 mA

    PD Power Dissipation,

    per Package (Note 3.)

    500 mW

    TA Ambient Temperature Range 55 to +125 C

    Tstg Storage Temperature Range 65 to +150 C

    TL Lead Temperature

    (8Second Soldering)

    260 C

    2. Maximum Ratings are those values beyond which damage to the devicemay occur.

    3. Temperature Derating:Plastic P and D/DW Packages: 7.0 mW/

    C From 65

    C To 125

    C

    This device contains protection circuitry to guard against damage due to high

    static voltages or electric fields. However, precautions must be taken to avoid

    applications of any voltage higher than maximum rated voltages to this

    highimpedance circuit. For proper operation, Vinand Voutshould be constrained

    to the range VSS (Vinor Vout) VDD.

    Unused inputs must always be tied to an appropriate logic voltage level (e.g.,

    http://onsem

    A = Assem

    WL or L = Wafer

    YY or Y = Year

    WW or W = Work

    Device Packag

    ORDERING INF

    MC14008BCP PDIP

    MC14008BDR2 SOIC

    MC14008BF SOEIAJ

    1 For ordering information

    PDIP16

    P SUFFI

    CASE 64

    SOIC1

    D SUFFI

    CASE 751

    SOEIAJ

    F SUFFI

    CASE 96

    MC14008B

    TRUTH TABLE

    (One Stage)

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    BLOCK DIAGRAM

    HIGHSPEED

    PARALLEL CARRY14 Cout

    13 S4

    12 S3

    11 S2

    B4 15

    A4 1

    B3 2

    A3 3

    B2 4

    A2 5

    ADDER

    4

    ADDER

    3

    ADDER

    2

    C4

    C3

    C2

    13

    14

    15

    16

    9

    10

    11

    125

    4

    3

    2

    1

    8

    7

    6

    S3

    S4

    Cout

    B4

    VDD

    Cin

    S1

    S2

    B2

    A3

    B3

    A4

    VSS

    A1

    B1

    A2

    PIN ASSIGNMENT

    Cin B A Cout S

    0 0 0 0 0

    0 0 1 0 1

    0 1 0 0 10 1 1 1 0

    1 0 0 0 1

    1 0 1 1 0

    1 1 0 1 0

    1 1 1 1 1

    MC14008B

    ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)

    VDD

    55 C

    25 C

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    VDD

    Characteristic

    Symbol

    Vdc

    Min

    Max

    Min

    Typ (4.)

    Max

    M

    Output Voltage 0 Level

    Vin= VDDor 0

    VOL

    5.0

    10

    15

    0.05

    0.05

    0.05

    0

    0

    0

    0.05

    0.05

    0.05

    Vin= 0 or VDD 1 Level

    VOH

    5.0

    10

    15

    4.95

    9.95

    14.95

    4.95

    9.95

    14.95

    5.0

    10

    15

    4.9

    9.9

    14

    Input Voltage 0 Level

    (VO= 4.5 or 0.5 Vdc)

    (VO= 9.0 or 1.0 Vdc)

    (VO= 13.5 or 1.5 Vdc)

    VIL

    5.0

    10

    15

    1.5

    3.0

    4.0

    2.25

    4.50

    6.75

    1.5

    3.0

    4.0

    (VO= 0.5 or 4.5 Vdc) 1 Level

    (VO= 1.0 or 9.0 Vdc)(VO= 1.5 or 13.5 Vdc)

    VIH

    5.0

    1015

    3.5

    7.011

    3.5

    7.011

    2.75

    5.508.25

    3

    71

    Output Drive Current

    (VOH= 2.5 Vdc) Source

    (VOH= 4.6 Vdc)

    (VOH= 9.5 Vdc)

    (VOH= 13.5 Vdc)

    IOH

    5.0

    5.0

    10

    15

    3.0

    0.64

    1.6

    4.2

    2.4

    0.51

    1.3

    3.4

    4.2

    0.88

    2.25

    8.8

    1

    0

    0

    2

    (VOL= 0.4 Vdc) Sink

    (VOL= 0.5 Vdc)

    (VOL= 1.5 Vdc)

    IOL

    5.0

    10

    15

    0.64

    1.6

    4.2

    0.51

    1.3

    3.4

    0.88

    2.25

    8.8

    0.3

    0

    2

    Input Current

    Iin

    15

    0.1

    0.00001

    0.1

    Input Capacitance

    (Vin= 0)

    Cin

    5.0

    7.5

    Quiescent Current

    (Per Package)

    IDD

    5.0

    10

    15

    5.0

    10

    20

    0.005

    0.010

    0.015

    5.0

    10

    20

    Total Supply Current (5.)(6.)

    (Dynamic plus Quiescent,

    Per Package)(CL= 50 pF on all outputs, all

    buffers switching)

    IT

    5.0

    10

    15

    IT= (1.7 A/kHz) f + IDDIT= (3.4 A/kHz) f + IDDIT= (5.0 A/kHz) f + IDD

    4. Data labelled Typ is not to be used for design purposes but is intended as an indication of the ICs potential pe5. The formulas given are for the typical characteristics only at 25

    C.

    6. To calculate total supply current at loads other than 50 pF:

    IT(CL) = IT(50 pF) + (CL 50) Vfk

    where: ITis in A (per package), CLin pF, V = (VDD VSS) in volts, f in kHz is input frequency, and k = 0.005.

    MC14008B

    SWITCHING CHARACTERISTICS (7.)(CL= 50 pF, TA= 25 C)

    VDDVd

    (8 )

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    Characteristic

    Symbol

    Vdc

    Min

    Typ (8.)

    Output Rise and Fall Time

    tTLH, tTHL= (1.5 ns/pF) CL+ 25 ns

    tTLH, tTHL= (0.75 ns/pF) CL+ 12.5 nstTLH, tTHL= (0.55 ns/pF) CL+ 9.5 ns

    tTLH,

    tTHL

    5.0

    1015

    100

    5040

    Propagation Delay Time

    Sum in to Sum Out

    tPLH, tPHL= (1.7 ns/pF) CL+ 315 ns

    tPLH, tPHL= (0.66 ns/pF) CL+ 127 ns

    tPLH, tPHL= (0.5 ns/pF) CL+ 90 ns

    Sum In to Carry Out

    tPLH, tPHL= (1.7 ns/pF) CL+ 220 ns

    tPLH, tPHL= (0.66 ns/pF) CL+ 112 nstPLH, tPHL= (0.5 ns/pF) CL+ 85 ns

    Carry In to Sum Out

    tPLH, tPHL= (1.7 ns/pF) CL+ 290 ns

    tPLH, tPHL= (0.66 ns/pF) CL+ 122 ns

    tPLH, tPHL= (0.5 ns/pF) CL+ 90 ns

    Carry In to Carry Out

    tPLH, tPHL= (1.7 ns/pF)