cmos technology scaling. moore’s law “cramming more components onto integrated circuits”...
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CMOS Technology Scaling
Moore’s law
“Cramming more Components onto Integrated Circuits” Gordon E. Moore, Electronics 1965, p. 114.
“VLSI: some fundamental challenges” Moore, IEEE Spectrum 1970, p.30.
“Moore’s law governs the Silicon revolution”Bandyopadhyay, Proc. of IEEE, 1998, p.78
Gordon Moore was Ph.D. in Chemistry
Interdisciplinary barriers in Science and Technology are imaginary !
Moore co-founded Intel and proved his vision
IEEE J. Solid State Circuits, Vo. 9(5), p.256 , 1974
Typical Scaling Scenario• 1974 : 5m Technology, Vdd = 10V • 1984 : 1m Technology, Vdd = 5V• 1994 : 0.35m Technology, Vdd = 3.5V• 2004 : 90nm Technology, Vdd = 1V • 2014 : 22nm Technology, Vdd = 0.75V
Constant Electric Field Scaling
Primary scaling factors:Tox, L, W, Xj (all linear dimensions) 1/KNa, Nd (doping concentration) KVdd (supply voltage) 1/K
Derived scaling behavior of transistor:Electric field 1Ids 1/KCapacitance 1/K
Derived scaling behavior of circuit:Delay (CV/I) 1/KPower (VI) 1/K2
Power-delay product 1/K3
Circuit density ( 1/A) K2
Technology scaling
Scaling factor K > 1
Constant Voltage Scaling
Primary scaling factors:Tox, L, W, Xj (all linear dimensions) 1/KNa, Nd (doping concentration) K2
Vdd (supply voltage) 1Derived scaling behavior of transistor:
Electric field KIds KCapacitance 1/K
Derived scaling behavior of circuit:Delay (CV/I) 1/K2
Power (VI) KPower-delay product 1/KCircuit density ( 1/A) K2
Technology scaling
Scaling factor K > 1
Generalized Scaling
Primary scaling factors:Tox, L, W, Xj (all linear dimensions) 1/KNa, Nd (doping concentration) KVdd (supply voltage) /K
Derived scaling behavior of transistor:Electric field Ids 2/KCapacitance 1/K
Derived scaling behavior of circuit:Delay (CV/I) 1/KPower (VI) 3/K2
Power-delay product 2/K3
Circuit density ( 1/A) K2
Technology scaling
Scaling factor K > 1
Non Scaling FactorsBandgap of Silicon Eg=1.12eV
Thermal voltage kT/q
Mobility degradationIncreasing doping and electric field
Velocity saturation
Parasitic s/d resistance
Process tolerance