development of high voltage sic emitter thyristor (eto) 2008... · 1. development of high voltage...
TRANSCRIPT
1
Development of High Voltage SiC Emitter Turn‐Off Thyristor (ETO)
Alex Q. Huang
Jerry Melcher
September 30, 2009
Funded by the Energy Storage Systems Program of the U.S. Department Of Energy (DOE/ESS) through the Small Business Innovation Research (SBIR) program and managed by Sandia National Laboratories (SNL)
STTR Phase I2008 DOE Annual Review
2
STTR Phase I2008 DOE Annual Review
2
Problem statement:Low cost, reliable, high efficiency power control and storage technologies are needed to handle increasing levels of power flow in distribution and sub- transmission applications including integration of renewable energy resources.
How to address this problem:•10 kV-12 kV SiC Emitter Turn-off (ETO) Thyristor•5 kHz switching capability•100 A current rating. •Large current module using multichip module packaging (MCM)•Superior to Si IGBT and MOSFET
oHigher frequency operationoLower conduction lossesoLower switching losses
STTR Phase I2008 DOE Annual Review
33
Si high power devices are approaching its physical limit:
• Voltage rating below 6.5 kV
• Operation frequency below 1 kHz
• Normal operation junction temperature is below 125 OC.
Limit of Si Power Devices
STTR Phase I2008 DOE Annual Review
4
STTR Phase I2008 DOE Annual Review
4
Motivation of SiC ETO
Advantages of SiC ETO:• Improved switching speed • High temperature operation capability• Gate control.• Better SOA
STTR Phase I2008 DOE Annual Review
55
Schematic of p type SiC ETO
Gate
Cathode
Anode
(a) p‐type ETO equivalent circuit; (b) corresponding ETO symbol.
STTR Phase I2008 DOE Annual Review
66
World’s first SiC ETO
STTR Phase I2008 DOE Annual Review
77
Blocking Characteristics of SiC GTO
0 -1000 -2000 -3000 -40000
-1
-2
-3
-4
-5
-6
0.0
-2.8
-5.6
-8.4
-11.2
-14.0
J C (u
A/cm
2 )
I C (u
A)
VC (V)
STTR Phase I2008 DOE Annual Review
88
DC Forward Characteristics of SiC GTO and ETO
0 -1 -2 -3 -4 -50
-2
-4
-6
-8
-10
-12
Increasing T
100 W/cm 2
25 oC 100 oC 150 oC
IG=-100 mA
I c (A)
VC (V)0 -1 -2 -3 -4 -5 -6
0
-2
-4
-6
-8
-10
-12
Increasing T
100 W/cm 2
25 oC 100 oC 150 oC
IG=-100 mA
I c (A)
VC (V)
(a) SiC GTO (b) SiC ETO
STTR Phase I2008 DOE Annual Review
99
Transient Characteristics of SiC ETO
Eoff
= 9.88mJ for 36 mm2
SiC GTO, capable 8 kHz switching at 200 OC.
STTR Phase I2008 DOE Annual Review
1010
RBSOA study of SiC ETO
VDC‐link
=2.5 kV
JC
=100 A/cm2
STTR Phase I2008 DOE Annual Review
1111
SiC ETO Based Boost Converter Demo
Vg
Vout
Ic
Vc
STTR Phase I2008 DOE Annual Review
12
Design of High Voltage (10‐kV) SiC GTO
13
Simulated DC Characteristics
0 1 2 3 4 5 6 7 80
20
40
60
80
100
25 oC
200 oC
100 W/cm 2
200 W/cm 2
25 oC
200 oC
MOSFET
N-GTO J F (
A/cm
2 )
VF (V)
P-GTO
STTR Phase I2008 DOE Annual Review
13
STTR Phase I2008 DOE Annual Review
1414
Simulated Transient Characteristics
p‐ETO n‐ETO
0.0 1.0 2.0 3.0 4.0 5.0-40
-30
-20
-10
0
10
20
30
40
-7
-6
-5
-4
-3
-2
-1
0
V C (kV
)
VG
V G (V
), I C (
A)
Time (us)
IA
VC
toff
=2.9 µs
Eoff
=190 mJ
toff
=0.52 µs
Eoff
=34 mJ
0.0 0.2 0.4 0.6 0.8 1.00
10
20
30
0
1
2
3
4
5
6
7
V A (k
V)
V G (
V),
I A (A
)
Time (us)
IA
VG
VA
STTR Phase I2008 DOE Annual Review
1515
Effect of Buffer Layer in SiC GTO
4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.00
20406080
100120140160180200220
(1E18)
(7E17)
(4E17)
(2E17)
NB=(4E16) cm-3
(6E17)(4E17)(3E17)(1E17)
NB=(4E16) cm-3
N-ETO
E off (
mJ)
Anode-Cathode Voltage (V)
P-ETO
1)
n‐ETO can achieve about 8 time smaller turn‐off energy, Eoff,
than p‐ETO due to a small
lower transistor current gain
2)
Eoff
reduces by 81% (6.6 mJ) and VF
increases by 18% (5.05 V)when
ND
increases form 4E16
cm3
to 4E17 cm3
for n type SiC ETO
STTR Phase I2008 DOE Annual Review
1616
Effect of Drift Layer Carrier Lifetime in SiC n‐GTO
3.6 4.0 4.4 4.8 5.2 5.6 6.00
10
20
30
40B
A
(0.6)
(1)(1.5)
tam= (2) us
NB= 4E17 cm-3
tam=0.6 us
(6E17)(4E17)(3E17)
(1E17)
NB= (4E16) cm-3
E off (
mJ)
Anode-Cathode Voltage (V)
The n type SiC GTO with a long drift layer carrier lifetime is superior to those
with a short drift layer carrier lifetime for the trade‐off between on‐state
voltage and turn‐off losses.
STTR Phase I2008 DOE Annual Review
1717
Summary
• We demonstrate the world’s first 4.5 kV SiC ETO
• The fast switching speed and low loss of the 4.5 kV SiC ETO
indicates the attractive potential of high voltage (>5 kV) SiC ETO
especially for high voltage high frequency applications.
• Theoretical comparisons of 10 kV SiC n and p type SiC ETO
shows the superiority of n type ETO, such as faster switching,
due to very low switching losses and wide RBSOA.
• Further improvement of n type ETO can be made by the
optimization of buffer layer and drift layer lifetime of SiC GTO
STTR Phase I2008 DOE Annual Review
1818
Further Work
• Development of 10 kV SiC n type ETO1) fabrication of 10 kV SiC n‐GTO2) Characterization of 10 kV SiC n‐ETO3) Application of 10 kV SiC n‐ETO
• Study of Si/SiC heterostructure
to reduce the turn‐ on knee voltage of SiC pn
junction ( 3 V)
1) Theoretical analysis2) Experimental study
STTR Phase I2008 DOE Annual Review
1919
Questions ?
Thank you