Download - Slides Topic2
1 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
EE8407 Topic 2
Power Converter Systems
Graduate Course EE8407
Ryerson Campus
Bin Wu PhD, PEng
ProfessorELCE DepartmentRyerson University
Contact Info Office: ENG328Tel: (416) 979-5000 ext: 6484Email: [email protected] http://www.ee.ryerson.ca/~bwu/
2 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
EE8407 Topic 2
Topic 2
High-Power Semiconductor Devices
3 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
EE8407 Topic 2
• Power Diode• SCR Thyristor• Gate Turn-Off Thyristor (GTO)• Integrated Gate Commutated Thyristor (GCT)• Insulated Gate Bipolar Transistor (IGBT)• Switch Series Operation
Lecture Topics
High-Power Semiconductor Devices
4 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
EE8407 Topic 2
12000
10000
8000
SCR12000V/1500A
(Mitsubishi)
4500V/900A(Mitsubishi)
6500V/1500A(Mitsubishi)
GTO/GCT
7500V/1650A(Eupec)
6500V/600A(Eupec)
6000
4000
2000
1000 2000 3000 4000
3300V/1200A(Eupec)
2500V/1800A(Fuji)
1700V/3600A(Eupec)
IGBT
SCR:GTO/GCT:IGBT:
27MVA36MVA
6MVA
6000V/3000A(ABB)
6500V/4200A(ABB)
6000V/6000A(Mitsubishi)
4800V5000A
(Westcode)
5000 6000 I (A)
V (V)
00
• Device Rating
High-Power Semiconductor Devices
5 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
EE8407 Topic 2
4500V/800A press pack and 1700V/1200A module diodes
Power Diode
6 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
EE8407 Topic 2
Press pack device:• Double sided cooling• Low assembly cost and high power density• Preferred choice for high voltage high power applications
• Heatsink Assembly
A
B
CdV
P
N
(a) Diode Rectifier (b) Press pack (c) Module
Heatsink
A
P
N
P
N
A
Power Diode
7 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
EE8407 Topic 2
4500V/800A and 4500V/1500A SCRs
SCR Thyristor
8 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
EE8407 Topic 2
• Switching Characteristics
DI9.0
DI1.0rrt
rrI1.0rrI
onV
dont
ontrt
Gi
Ti
Tv
GMIGMI1.0
t
t
t
DI
offt
rrQ
DVDV1.0
Ti
TvGi
SCR Thyristor
9 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
EE8407 Topic 2
DRMV RRMV TAVMI TRMSI - Maximum Rating 12000V 12000V 1500A 2360A -
Turn-on
Time
Turn-off
Time /dtdiT /dtdvT rrQ Switching
Characteristics sont 14 sofft 1200 sA /100 sV /2000 C7000
DRMV – Repetitive peak off-state voltage RRMV – Repetitive peak reverse voltage
TAVMI – Maximum average on-state current RRMSI – Maximum rms on-state current
2rrrr
rr
ItQ – Reverse recovery Charge Part number – FT1500AU-240 (Mitsubishi)
• Main Specifications
12000V/1500A SCR Thyristor
SCR Thyristor
10 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
EE8407 Topic 2
4500V/800A and 4500V/1500A GTOs
Gate Turn-Off (GTO) Thyristor
11 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
EE8407 Topic 2
• Symmetrical versus Asymmetrical GTOs
Type Blocking Voltage
Example (6000V GTOs)
Applications
Asymmetrical GTO DRMRRM VV VVDRM 6000
VVRRM 22
For use in voltage
source inverters with anti-parallel diodes.
Symmetrical GTO DRMRRMVV VVDRM 6000
VVRRM 6500
For use in current source inverters.
DRMV - Maximum repetitive peak (forward) off-state voltage
RRMV - Maximum repetitive peak reverse voltage
Gate Turn-Off (GTO) Thyristor
12 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
EE8407 Topic 2
• Switching Characteristics
Tv
DV
dofft tailt
ft
DV9.0
DV1.0DI
DI9.0
DI1.0
rtdont
dtdiG /1
MGI 1
MGI 11.0 MGI 21.0
MGI 2
TiTT iv ,
Gi
t
t
dtdiG /2
0
0
Ti
TvGi
Gate Turn-Off (GTO) Thyristor
13 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
EE8407 Topic 2
• Main Specifications
DRMV RRMV TGQMI TAVMI TRMSI - Maximum Rating 4500V 17V 4000A 1000A 1570A -
Turn-on Switching
Turn-off Switching
/dtdiT /dtdvT /dtdiG1 /dtdiG2 Switching
Characteristics sdont 5.2
srt 0.5
sdofft 0.25
sft 0.3 sA /500 sV /1000 sA /40 sA /40
On-state Voltage VV stateonT 4.4)( at AIT 4000
DRMV - Repetitive peak off-state voltage RRMV - Repetitive peak reverse voltage
TGQMI - Repetitive controllable on-state current TAVMI - Maximum average on-state current
RRMSI - Maximum rms on-state current Part number - 5SGA 40L4501 (ABB)
4500V/4000A Asymmetrical GTO Thyristor
Gate Turn-Off (GTO) Thyristor
14 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
EE8407 Topic 2
6500V/1500A Symmetrical GCT
GCT = Improved GTO + Integrated Gate + Anti-parallel Diode (optional)
Integrated Gate Commutated Thyristor (GCT)
15 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
EE8407 Topic 2
• GCT Classifications
Type Anti-parallel
Diode Blocking Voltage
Example (6000V GCT)
Applications
Asymmetrical GCT Excluded
DRMRRM VV
VVDRM 6000VVRRM 22
For use in voltage source inverters with anti-parallel diodes.
Reverse Conducting GCT
Included 0RRMV VVDRM 6000 For use in voltage source inverters.
Symmetrical GCT (Reverse Blocking)
Not required DRMRRM VV VVDRM 6000VVRRM 6500
For use in current source Inverters.
DRMV - Maximum repetitive peak forward off-state voltage
RRMV - Maximum repetitive peak reverse voltage
Integrated Gate Commutated Thyristor
16 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
EE8407 Topic 2
• Switching Characteristics
DI9.0
DI4.0
DV9.0
DV1.0
Gi
Gv
t
t
TT iv ,
Tv
DV
Ti
DI
rtdont
dtdiG /1
dtdiG /2
dofft
ft
Gv
0
0
Gi
Ti
TvGi
Integrated Gate Commutated Thyristor
17 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
EE8407 Topic 2
• Main Specifications
DRMV RRMV TQRMI TAVMI TRMSI - Maximum Rating 6000V 22V 6000A 2000A 3100A -
Turn-on Switching
Turn-off Switching
/dtdiT /dtdvT /dtdiG1 /dtdiG2 Switching
Characteristics stdon 0.1
srt 0.2
sdofft 0.3
ft - N/A sA /1000 sV /3000 sA /200
10,000
sA /
On-state
Voltage VV stateonT 4)( at AIT 6000
DRMV - Repetitive peak off-state voltage RRMV - Repetitive peak reverse voltage
TGRMI - Repetitive controllable on-state current TAVMI - Maximum average on-state current
RRMSI - Maximum rms on-state current Part number – FGC6000AX120DS (Mitsubishi)
6000V/6000A Asymmetrical GCT
Integrated Gate Commutated Thyristor
18 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
EE8407 Topic 2
1700V/1200A and 3300V/1200A IGBT modules
Insulated Gate Bipolar Transistor (IGBT)
19 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
EE8407 Topic 2
Static V-I Characteristics
t+15V
90%
t
+15V
10%
tdon tr tdoff tf
t
90%
0
GEv
Gv
Ci
0
0
Switching characteristics
5GEV
4GEV
3GEV
2GEV
1GEV
CEV2V0
CI
CEvG
C
E
Ci
• IGBT Characteristics
Insulated Gate Bipolar Transistor (IGBT)
20 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
EE8407 Topic 2
• Main Specifications
CEV CI CMI - Maximum Rating 3300V 1200A 2400A -
dont rt dofft ft Switching Characteristics 0.35 s 0.27 s 1.7 s 0.2 s
Saturation Voltage
V3.4satCEI at AIC 1200
CEV - Rated collector-emitter voltage
CI - Rated dc collector current
CMI - Maximum repetitive peak collector current
Part number – FZ1200 R33 KF2 (Eupec)
3300V/1200A IGBT
Insulated Gate Bipolar Transistor (IGBT)
21 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
EE8407 Topic 2
• Cause of Voltage Imbalance
1S
2S
3S
1v
2v
3v
Type Causes of Voltage Imbalance
Static Voltage Sharing
lkI – Device off-state leakage current
jT – Junction temperature
Device
dont – Turn-on delay time
dofft – Turn-off delay time
rrQ – Reverse recovery charge of
anti-parallel diode
jT – Junction temperature
Gate Driver
GDont – Gate driver turn-on delay time
GDofft – Gate driver turn-off delay time
wireL – Wiring inductance between the
the gate driver and the device gate
Dynamic Voltage Sharing
– Differences between series connected devices.
Device Series Operation
22 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
EE8407 Topic 2
sR
sCvR
sR
sCvR
sR
sCvR
1S
2S
3S
1v
2v
3v
• Equal Voltage Sharing
• S1, S2, S3:
GTO, GCT or IGBT
• Voltage Sharing:
v1 = v2 = v3 in steady state
and transients
• Static Voltage Sharing:
Rv
• Dynamic Voltage Sharing:
Rs and Cs
Device Series Operation
23 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
EE8407 Topic 2
• Active Overvoltage Clamping (AOC)
• Assumption: S1 is turned off earlier than S2
• VCE1 is clamed to Vm due to active clamping.
Gate SignalConditioning
inv
Gate SignalConditioning gR
Amp
gRAmp
Active OvervoltageClamping
AOC
Vm
Vm
1CEv
2CEv
1S
2S
- Suitable for series IGBTs- Not applicable to GCTs
1CEv
2CEvCi
dt0
mV
t
Device Series Operation
24 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
EE8407 Topic 2
Item GTO IGCT IGBT M axim um switch pow er (Device IV )
36M VA 36M VA 6M VA
Active di/dt and dv/dt control No No Y es
Active short circuit protection No No Y es
Turn-off (dv/dt) snubber Required Not required No required
Turn-on (di/dt) snubber Required Required No required
Parallel connection No No Y es
Sw itching speed Slow M oderate Fast
Behavior after destruction Shorted Shorted O pen
in m ost cases
O n-state losses Low Low H igh
Sw itching losses H igh Low Low
Gate Driver Com plex, separate
Com plex, integrated
Sim ple, com pact
Gate Driver Pow er Consum ption
H igh H igh Low
Summary
25 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
EE8407 Topic 2