Rev.5

Rev.5

NPN

Tested parameter Connecting method

Vce (Sat) C

B

E

Diode

Forward voltage

drop E

B

C

PNP

Tested parameter Connecting method

Vce (Sat)

E

B

C

Diode

Forward voltage

drop

C

B

E

3A

6A

1 2 3

4

5

678

OFF2kV200V

2A(Ic)

2kV200V

2A(Ic)

VV BRBR

800mA(Ic) 800mA(Ic)

100mA(Ic) 100mA(Ic)

10mA(Ic)10mA(Ic)

10mA(Ib) 10mA(Ib)

1mA(Ib)

10uA(Ib)I

79xx OFF 78xxI

10uA(Ib)

1mA(Ib)

CEOCEO

V VCE(sat) CE(sat)

FE FE

TESTHV

HOLD

C

E B

B C E B C C+ C-

DC6V

PNP NPN

Transistor Tester 294

3 2 1

h h

(2000uA) (2000uA)

Parameter Measuring

range

Display Resolution Operating condition

1000V 0~1000 1V Breakdown current less

than 1mAV (BR)

Breakdown voltage 200V 0~199.9 0.1V Breakdown current less

than 1mA

2A (Ic) 0~6.00 0.01V Ic approx.2000mA

Ib approx. 200mA

800mA (Ic) 0~6.00 0.01V Ic approx. 800mA

Ib approx. 80mA

100mA (Ic) 0~6.00 0.01V Ic approx.100mA

Ib approx. 10mA

Vce (sat)

Collector-emitter

saturation voltage drop

10mA (Ic) 0~6.00 0.01V Ic approx. 10mA

Ib approx. 1mA

10mA (Ib) 0~199.9 0.1 Ib approx. 10mA

1mA (Ib) 0~1999 1 Ib approx. 1mA

hFE

DC Current Gain

10uA (Ib) 0~1999 1 Ib approx. 0.01mA

Iceo

Reverse leakage current

2000μA 0~1999 1μ A Testing voltage approx.

27V

78 or 79 three-terminal

voltage regulator

78xx/79xx 0~24.0 0.1V Testing voltage approx.

27V

NPN

Parameter Connecting method

ICEO C

B

E

ICBO C

B

E

IEBO C

B

E

Diode

reverse Iceo

C

B

E

PNP

Parameter Connecting method

ICEO

E

B

C

ICBO

E

B

C

IEBO

E

B

C

Diode

reverse Iceo

E

B

C

PNP

Parameter Connecting method

hFE

E

B

C

NPN

Parameter Connecting method

hFE C

B

E

3A

3A

NPN

Prameter Connecting method

BVCBO C

B

E

BVEBO

E

B

C

BVCEO

E

B

C

BVCES C

B

E

Diode

Reverse breakdown

voltage

C

B

E

zener diode

zener voltage

C

B

E

light emitting diode

forward voltage

drop E

B

C

light emitting diode

reverse voltageE

B

C

Bidirectional

controlled silicon

Breakdown voltage

C

B

E

unidirectional

controlled silicon

Breakdown voltage

C

B

E

N-MOS transistor

Withstand voltage

test E

B

C

porcelain capacitor

terylene capacitor

mica capacitor

monolithic

capacitor

Withstand voltage

test

C

B

E

Varistor

operating voltageE

B

C

PNP

Parameter Connecting method

BVCBO

E

B

C

BVEBO C

B

E

BVCEO C

B

E

BVCES

E

B

C

Diode

reverse breakdown voltageE

B

C

zener diode

zener voltageE

B

C

light emitting diode

forward voltage drop

C

B

E

light emitting diode

reverse voltage

C

B

E

Bidirectional controlled

silicon

Breakdown voltage E

B

C

unidirectional controlled

silicon

Breakdown voltage E

B

C

P-MOS transistor

Withstand voltage test

C

B

E

porcelain capacitor

terylene capacitor

mica capacitor

monolithic capacitor

Withstand voltage test

E

B

C

Varistor

operating voltageE

B

C

NPN

Prameter Connecting method

BVCBO C

B

E

BVEBO

E

B

C

BVCEO

E

B

C

BVCES C

B

E

Diode

Reverse breakdown

voltage

C

B

E

zener diode

zener voltage

C

B

E

light emitting diode

forward voltage

drop E

B

C

light emitting diode

reverse voltageE

B

C

Bidirectional

controlled silicon

Breakdown voltage

C

B

E

unidirectional

controlled silicon

Breakdown voltage

C

B

E

N-MOS transistor

Withstand voltage

test E

B

C

porcelain capacitor

terylene capacitor

mica capacitor

monolithic

capacitor

Withstand voltage

test

C

B

E

Varistor

operating voltageE

B

C

PNP

Parameter Connecting method

BVCBO

E

B

C

BVEBO C

B

E

BVCEO C

B

E

BVCES

E

B

C

Diode

reverse breakdown voltageE

B

C

zener diode

zener voltageE

B

C

light emitting diode

forward voltage drop

C

B

E

light emitting diode

reverse voltage

C

B

E

Bidirectional controlled

silicon

Breakdown voltage E

B

C

unidirectional controlled

silicon

Breakdown voltage E

B

C

P-MOS transistor

Withstand voltage test

C

B

E

porcelain capacitor

terylene capacitor

mica capacitor

monolithic capacitor

Withstand voltage test

E

B

C

Varistor

operating voltageE

B

C