ee221 lect 1 ver1
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EE221 Electronics -II
Lecture 1
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EE-221 ELECTRONICS -II
EE221 Spring 20123
TEXT:Microelectronic Circuits Sixth Edition,by Sedra, Smith OxfordUniversity Press
REFERENCEFundamentals of Microelectronics, by Behzad Razavi, John Wiley & Sons Inc
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EE-221 ELECTRONICS -II
EE221 Spring 20124
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OV DS V v
RECALL: NMOS Essential Relationships
Channelno: tnGS V v
)21
( 2'
= DS DSOV n D vvv L
W k i RegionTriodein NMOS
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OV DS V v
RECALL: NMOS Essential Relationships
Channelno: tnGS V v
RegionSaturationin NMOS( ) 121
2' DSOV n D vv LW
k i +=
tnGD V v
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RECALL: PMOS Essential Relationships
Channel;no: tpSG V v
OV SD V v
)21
( 2'
=SDSDOV p D vvv L
W k i RegionTriodeinPMOS
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21
2'
OV p D v LW
k i
=
RECALL: NMOS Essential Relationships
SaturationinPMOS
SDSG DG vvv =
Channel;no: tpSG V v
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RECALL: BJT Circuits at DC
Cut-off Mode
EBJ >> ReverseBiased
CBJ >> ReverseBiased
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BJT Circuits at DC
Active Mode
EBJ >> ForwardBiased
CBJ >> ReverseBiased
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BJT Circuits at DC
Saturation Mode
EBJ >> ForwardBiased
CBJ >> ForwardBiased
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Typical CMOS Parameters
Parameters NMOS PMOS NMOS PMOS NMOS PMOS NMOS PMOS NMOS PMOS
15 15 9 9 6 6 4 4 2.7 2.7
2.3 2.3 3.8 3.8 5.8 5.8 8.6 8.6 12.8 12.8
550 250 500 180 460 160 450 100 400 100
127 58 190 68 267 93 387 86 511 1280.7 -0.7 0.7 -0.8 0.5 -0.6 0.5 -0.5 0.4 -0.4
5 5 3.3 3.3 2.5 2.5 1.8 1.8 1.3 1.3
25 20 20 10 5 6 5 6 5 6
0.2 0.2 0.4 0.4 0.3 0.3 0.37 0.33 0.36 0.33
0.8 m 0.5 m 0.25 m 0.18 m 0.13 m
(nm)
(fF/ )
(A / )
(V)
(V)
/m)
(fF/ )
( cm / V.s)
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Typical Parameters for BJT
Parameters NPN Lateral PNP NPN Lateral PNP
500 900 2 2
200 50 100 50
130 50 35 30
50 60 8 18
0.35ns 30ns 10ps 650ps
1pF 0.3pF 5fF 14fF0.3pF 1pF 5fF 15fF
200 300 400 200
Standard HV Process Advanced LV Process
(
(V)
(V)
(A/A)
(A)
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Comparison of MOSFET &BJT
EE221 Spring 2012
Students to thoroughly read and understand all parameterslisted in the table mentioned below:
SEDRA & SMITH 5 Ed Table 6.3
SEDRA & SMITH 6 Ed Table 7.A.3
The student to work to understand Examples 6.1 and 6.2and attempt EXERCISE 6.1 and 6.2
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The Basic MOSFET / BJT Cell
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Active Loaded MOSFET / BJT Cell
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In IC technology it is difficult to implement resistances with
precise values. A very high load resistance is effectively implemented in the
drain (collector) loop; thus higher gain is achieved.
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Active Loaded MOSFET / BJT Cell
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POINTS TO NOTE
The MOSFET is biased to operate in Saturation Region. The BJT is biased to operate in Active region. Current = and =
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CE Amplifier with Current-Source Load
r Rin =
omvo r g A =oo r R
=Assume IdealCurrent Source soLoad Resistanceis infinite
o
vo
A
A
astoreferredbeWill
GAININTRINSICtoreferredisit
gainpossiblemaximumtheis
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CE Amplifier with Current-Source Load
r Rin =
omvo r g A =
oo r R=
(A) ............T
C m V
I g =
(B) ............C
Ao I
V r =
T
Aom V
V r g A ==0
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Typical Parameters for BJT
Parameters NPN Lateral PNP NPN Lateral PNP
100V-130V 5V-35V
25 25
4000-5200 200-1400
Standard HV Process Advanced LV Process
(V)
(mV)
(V / V)
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CS Amplifier with Current-Source Load
=in R
omvo r g A=
oo r R =
Assume IdealCurrent Source soLoad Resistanceis infinite
o
vo
A
A
astoreferredbeWill
GAININTRINSICtoreferredisit
gainpossiblemaximumtheis
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CS Amplifier with Current-Source Load
2OV
Ao V
V A =
2
OV
Ao
V
LV A
=
(A) ............2 / OV
Dm V
I g =
(B).......I) / (2 D LW C g oxnm =
(C) .........V A
D D
Ao
I
L
I
V r
==
D
oxn Ao
I
LW C V A
) / )((2 =
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Typical CMOS Parameters
0.8 m 0.5 m 0.25 m 0.18 m 0.13 mParameters NMOS NMOS NMOS NMOS NMOS
0.7 0.7 0.5 0.5 0.4
5 3.3 2.5 1.8 1.3
25 20 5 5 520 10 1.25 0.9 0.65
0.96 0.6 0.33 0.1 0.033
21 16.7 3.8 9 19.7
(V)
/m)
(V)
(V)/2 (V)
(V /V)
EE221 Spring 2012
The value of for new technologies is in the range of 0.15Vto 0.3V ( is 0.075V 0.15V)
The numerator quantity is both process dependent and devicedependent and is steadily decreasing ( = )
For a given technology can be increased by using a longerMOSFET and lower ( but this also deceases the amplifierBW )
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Effect of Output Resistance of Current-
Source Load
I V r Ao
22
=
2])[)((21
tpG DDox p V V V LW
C I = I
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Effect of Output Resistance of Current-
Source Load
I V r Ao
22
=
2])[)((21
tpG DDox p V V V LW
C I =
Q2&Q1forsameisAssume21
Aomv V r g A =
)||( 211 oomi
ov r r gv
v A =
ov A A 21
Therefore=
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Effect of Output Resistance of Current-
Source Load (Print Version)
I
V r Ao
22
=
2])[)((2
1tpG DDox p V V V
L
W C I =
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Example 7.2 & 7.3 S&S 6EdSec6.5.2 Ex 6.8 S&S 5Ed
A practical circuit implementation ofthe common-source amplifier isshown in figure on the left. Here the
current-source transistor Q2 is theoutput transistor of a current mirrorformed by Q2 and Q3 and fed with areference current I-ref.
Assume that Q2 and Q3 arematched. Also assume that I-ref is astable, well-predicted current that isgenerated with a special circuit onthe chip.
Determine the Voltage TransferCharacteristic (VTC), that is,versus .
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Example 7.2
The Current Mirror appears as a
Load in the drain of the transistorQ1.
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Example 7.2
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Current Mirror (PMOS)
1 / 12 / 2
shown thatbecanIt 2
= LW LW
I I REF D
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thenandIf 22121 REF D I I L LW W ===
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Current Mirror (PMOS)
(A) ............)(33
21 2'
3 t SGn D V V LW
k I
=
(B) ............ 3 REF D I I =
(C) ............)(
2
2
2
1 2'2 t SGn D V V
L
W k I
=
(D) ............ 3 / 32 / 2
32
= LW LW
I I D D
(E) ............ 3 / 32 / 2
2
=
LW LW I I REF D
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NMOS CCS (Hidden Slide)
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NMOS Current Mirror (Hidden Slide)
1 / 12 / 2
shown thatbecanIt 2
= LW LW
I I REF D
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thenandIf 22121 REF D I I L LW W ===
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(A) ............)(11
21 2'
1 t GSn D V V LW
k I
=
(B) ............ 1 RV V V I I GSSS DD REF D +==
(C) ............)(
2
2
2
1 2'2 t GSn D V V
L
W k I
=
(D) ............ 1 / 12 / 2
12
= LW LW
I I D D
(E) ............ 1 / 12 / 2
2
=
LW LW I I REF D
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NMOS Current Mirror (Hidden Slide)
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Example 7.2
l
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Example 7.2
E l 7 2
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Example 7.2
NOTE that will have drain current equal to only when= =
Q2 operates in saturation as long as = or (Max output voltage)
E l 7 2
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Example 7.2
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Recall: MOSFET Voltage Gain
(Animated Version)
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Recall: MOSFET Voltage Gain (Print Version)
ll OS l G i
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Recall: MOSFET Voltage Gain
(Print Version)
Example 7 2
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Example 7.2
=
Example 7 2 (Hidden Slide)
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Example 7.2 (Hidden Slide)
Example 7 2
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Example 7.2
Do Example 7.3Do Example 7.3
Increasing the Gain of the Basic Cell
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Increasing the Gain of the Basic Cell
Increasing the Gain of the Basic Cell
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Increasing the Gain of the Basic Cell