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Z. Feng MTU EE5780 Advanced VLSI CAD 1.1 EE5780 Advanced VLSI CAD Lecture 1 Introduction Zhuo Feng

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Z. Feng MTU EE5780 Advanced VLSI CAD1.1

EE5780 Advanced VLSI CAD

Lecture 1 IntroductionZhuo Feng

Z. Feng MTU EE5780 Advanced VLSI CAD1.2

■ Prof. Zhuo Feng► Office: EERC 513► Phone: 487-3116 ► Email: [email protected]

■ Class Website ► http://www.ece.mtu.edu/~zhuofeng/EE5780Fall2013.html► Check the class website for lecture materials, assignments

and announcements

■ Schedule► TR 11:05pm-12:20pm EERC 508► Office hours: TR 4:00pm – 5:00pm or by appointments

Z. Feng MTU EE5780 Advanced VLSI CAD1.3

Topics (tentative)■ 1. Introduction■ 2. CMOS circuit and layout■ 3. MOS transistor device characteristics■ 4. DC and transient responses, delay estimation■ 5. Logical effort■ 6. Power estimation and reduction■ 7. Modified nodal analysis and SPICE simulation■ 8. Interconnect modeling and analysis■ 9. Combinational circuits design and modeling■ 10. Sequential circuits■ 11. Statistical timing analysis■ 12. SRAM design and yield analysis■ 13. Power & clock distribution networks design, modeling and analysis

Z. Feng MTU EE5780 Advanced VLSI CAD1.4

Grading Policy■ Homework: 30%■ Mid-term Exam: 30%■ Final Exam: 30%■ Class Attendance: 10%■ Letter Grades:

►A: 85~100; AB: 80~84; B: 75~79; BC: 70~74; C: 65~69; D: 60~64; F: 0~59

Z. Feng MTU EE5780 Advanced VLSI CAD1.5

Moore’s law in Microprocessors

40048008

80808085 8086

286386

486Pentium® proc

P6

0.001

0.01

0.1

1

10

100

1000

1970 1980 1990 2000 2010Year

Tra

nsi

sto

rs (

MT

)

2X growth in 1.96 years!

Transistors on Lead Microprocessors double every 2 yearsTransistors on Lead Microprocessors double every 2 years

Courtesy, Intel

Z. Feng MTU EE5780 Advanced VLSI CAD1.6

Die Size Growth

40048008

80808085

8086286

386486Pentium ® proc

P6

1

10

100

1970 1980 1990 2000 2010Year

Die

siz

e (

mm

)

~7% growth per year~2X growth in 10 years

Die size grows by 14% to satisfy Moore’s LawDie size grows by 14% to satisfy Moore’s Law

Courtesy, Intel

Z. Feng MTU EE5780 Advanced VLSI CAD1.7

Frequency

P6Pentium ® proc

48638628680868085

8080800840040.1

1

10

100

1000

10000

1970 1980 1990 2000 2010Year

Fre

qu

en

cy (

Mh

z)

Lead Microprocessors frequency doubles every 2 yearsLead Microprocessors frequency doubles every 2 years

Doubles every2 years

Courtesy, Intel

Z. Feng MTU EE5780 Advanced VLSI CAD1.8

Power Dissipation

P6Pentium ®proc

486

3862868086

80858080

80084004

0.1

1

10

100

1971 1974 1978 1985 1992 2000Year

Po

we

r (W

atts

)

Lead Microprocessors power continues to increaseLead Microprocessors power continues to increase

Courtesy, Intel

Z. Feng MTU EE5780 Advanced VLSI CAD1.9

Why Scaling?■ Technology shrinks by ~0.7 per generation■ With every generation can integrate 2x more

functions on a chip; chip cost does not increase significantly

■ Cost of a function decreases by 2x■ But …

► How to design chips with more and more functions?► Design engineering population does not double every two

years…

■ Hence, a need for more efficient design methods► Exploit different levels of abstraction

Z. Feng MTU EE5780 Advanced VLSI CAD1.10

Pentium 4■ Deep pipeline (2001)

► Very fast clock► 256-1024 KB L2$

■ Characteristics► 180 – 65 nm process► 42-125M transistors► 1.4-3.4 GHz► Up to 160 W► 32/64-bit word size► 478-pin PGA

■ Units start to becomeinvisible on this scale

Z. Feng MTU EE5780 Advanced VLSI CAD1.11

Pentium M■ Pentium III derivative

► Better power efficiency► 1-2 MB L2$

■ Characteristics► 130 – 90 nm process► 140M transistors► 0.9-2.3 GHz► 6-25 W► 32-bit word size► 478-pin PGA

■ Cache dominates chip area

Z. Feng MTU EE5780 Advanced VLSI CAD1.12

Core2 Duo■ Dual core (2006)

► 1-2 MB L2$ / core■ Characteristics

► 65-45 nm process► 291M transistors► 1.6-3+ GHz► 65 W► 32/64 bit word size► 775 pin LGA

■ Much better performance/power efficiency

Z. Feng MTU EE5780 Advanced VLSI CAD1.13

Core i7■ Quad core (& more)

► Pentium-style architecture► 2 MB L3$ / core

■ Characteristics► 45-32 nm process► 731M transistors► 2.66-3.33+ GHz► Up to 130 W► 32/64 bit word size► 1366-pin LGA► Multithreading

■ On-die memory controller

Z. Feng MTU EE5780 Advanced VLSI CAD1.14

Atom■ Low power CPU for netbooks

► Pentium-style architecture► 512KB+ L2$

■ Characteristics► 45-32 nm process► 47M transistors► 0.8-1.8+ GHz► 1.4-13 W► 32/64-bit word size► 441-pin FCBGA

■ Low voltage (0.7 – 1.1 V) operation► Excellent performance/power

Z. Feng MTU EE5780 Advanced VLSI CAD1.15

■ A plethora of VLSI CAD problems

Devices, interconnects, circuits, systems, signal, power, analog, digital …..

Z. Feng MTU EE5780 Advanced VLSI CAD1.16

Design Abstraction Levels

n+n+S

GD

+

DEVICE

CIRCUIT

GATE

MODULE

SYSTEM

Z. Feng MTU EE5780 Advanced VLSI CAD1.17

■ Where are we in the design flow?Specifications

System-level Design

RTL-level Design

Gate-level Design

Transistor/Circuit Level

Final Verification

Layout

Top-down Design

Bottom-up Verification

Electrical & Thermal Properties,Delays, Waveforms,Parasitics Effects, Coupling Noise …

Z. Feng MTU EE5780 Advanced VLSI CAD1.18

Design Metrics■ How to evaluate performance of a digital

circuit (gate, block, …)?►Cost►Reliability►Scalability►Speed (delay, operating frequency) ►Power dissipation►Energy to perform a function

Z. Feng MTU EE5780 Advanced VLSI CAD1.19

■ Why circuit analysis?

►Performance verification

▼A critical step for evaluating expected performanceprior to manufacturing

▼Simulation is always cheaper and more efficient than actually making the chip

▼True more than ever for today’s high manufacturing costs

Z. Feng MTU EE5780 Advanced VLSI CAD1.20

■ Why circuit simulation (cont’d) ?

► Design optimization/synthesis

▼Need to evaluate circuit performances many times in an optimization loop before meeting all the specs

▼Can only be practically achieved via simulation (models)

Circuit Optimizer

SimulationEngine

Update design parameters

PerformanceEvaluation

Meet all specs?

YesNo

Convergence

Z. Feng MTU EE5780 Advanced VLSI CAD1.21

■ Why models?► Models are integral parts of system simulation and/or optimization

Abstract Executable Models

Abstract Executable Models

Cycle AccurateModels

Cycle AccurateModels

VHDL/Verilog Models

VHDL/Verilog Models

InterconnectGate ModelsInterconnectGate Models

Device ModelsDevice Models

Cost

Speed

High

Low

Low

High

Z. Feng MTU EE5780 Advanced VLSI CAD1.22

■ Assessment of simulators

Accuracy

RuntimeMemory

Accuracy

RuntimeMemory

Accuracy

RuntimeMemory

Robustness/Applicability

Z. Feng MTU EE5780 Advanced VLSI CAD1.23

■ Selected Topics

►Classical circuit simulation methods (SPICE)▼LU factorization, Newton’s method

▼(Modified) nodal formulation (MNA)

▼Nonlinear DC analysis

▼AC analysis

▼Linear/nonlinear transient analyses

▼SPICE device models

Z. Feng MTU EE5780 Advanced VLSI CAD1.24

■ Many problems are modeled by some form of coupled (nonlinear) first-order differential equations

■ For circuit problems this is usually done using MNA formulation

3v

f(v)i 1v2v 4vC

R

v

Z. Feng MTU EE5780 Advanced VLSI CAD1.25

N dimensional vector of unknownnode voltages

vector of independent sources

nonlinear operator

0)()()(12

4131 vvfR

vvdt

vvdC

0))(),(),(( tutxtxF Xx

)0(

)(tx

)(tu

F

■ Write KCL (Kirchoff’s Current Law) at node 1:

■ If we do this for all N nodes:

Z. Feng MTU EE5780 Advanced VLSI CAD1.26

How can we solve this set of nonlinear differential equations?

0))(),(),(( tutxtxF Xx

)0(

■ Closed-form formula/hand analysis easily becomes infeasible

■ Need to develop computer programs (circuit simulators) to solve for the solution numerically

Z. Feng MTU EE5780 Advanced VLSI CAD1.27

■ Selected Topics►Statistical timing analysis & optimization

Process Characterization

InterconnectGate Models

Delay Calculators

SSTAStatistical Opt.

Variability