ee5780 advanced vlsi cadzhuofeng/ee5780fall2013_files/lecture_01_introduction.pdf1.9 z. feng mtu...
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Z. Feng MTU EE5780 Advanced VLSI CAD1.2
■ Prof. Zhuo Feng► Office: EERC 513► Phone: 487-3116 ► Email: [email protected]
■ Class Website ► http://www.ece.mtu.edu/~zhuofeng/EE5780Fall2013.html► Check the class website for lecture materials, assignments
and announcements
■ Schedule► TR 11:05pm-12:20pm EERC 508► Office hours: TR 4:00pm – 5:00pm or by appointments
Z. Feng MTU EE5780 Advanced VLSI CAD1.3
Topics (tentative)■ 1. Introduction■ 2. CMOS circuit and layout■ 3. MOS transistor device characteristics■ 4. DC and transient responses, delay estimation■ 5. Logical effort■ 6. Power estimation and reduction■ 7. Modified nodal analysis and SPICE simulation■ 8. Interconnect modeling and analysis■ 9. Combinational circuits design and modeling■ 10. Sequential circuits■ 11. Statistical timing analysis■ 12. SRAM design and yield analysis■ 13. Power & clock distribution networks design, modeling and analysis
Z. Feng MTU EE5780 Advanced VLSI CAD1.4
Grading Policy■ Homework: 30%■ Mid-term Exam: 30%■ Final Exam: 30%■ Class Attendance: 10%■ Letter Grades:
►A: 85~100; AB: 80~84; B: 75~79; BC: 70~74; C: 65~69; D: 60~64; F: 0~59
Z. Feng MTU EE5780 Advanced VLSI CAD1.5
Moore’s law in Microprocessors
40048008
80808085 8086
286386
486Pentium® proc
P6
0.001
0.01
0.1
1
10
100
1000
1970 1980 1990 2000 2010Year
Tra
nsi
sto
rs (
MT
)
2X growth in 1.96 years!
Transistors on Lead Microprocessors double every 2 yearsTransistors on Lead Microprocessors double every 2 years
Courtesy, Intel
Z. Feng MTU EE5780 Advanced VLSI CAD1.6
Die Size Growth
40048008
80808085
8086286
386486Pentium ® proc
P6
1
10
100
1970 1980 1990 2000 2010Year
Die
siz
e (
mm
)
~7% growth per year~2X growth in 10 years
Die size grows by 14% to satisfy Moore’s LawDie size grows by 14% to satisfy Moore’s Law
Courtesy, Intel
Z. Feng MTU EE5780 Advanced VLSI CAD1.7
Frequency
P6Pentium ® proc
48638628680868085
8080800840040.1
1
10
100
1000
10000
1970 1980 1990 2000 2010Year
Fre
qu
en
cy (
Mh
z)
Lead Microprocessors frequency doubles every 2 yearsLead Microprocessors frequency doubles every 2 years
Doubles every2 years
Courtesy, Intel
Z. Feng MTU EE5780 Advanced VLSI CAD1.8
Power Dissipation
P6Pentium ®proc
486
3862868086
80858080
80084004
0.1
1
10
100
1971 1974 1978 1985 1992 2000Year
Po
we
r (W
atts
)
Lead Microprocessors power continues to increaseLead Microprocessors power continues to increase
Courtesy, Intel
Z. Feng MTU EE5780 Advanced VLSI CAD1.9
Why Scaling?■ Technology shrinks by ~0.7 per generation■ With every generation can integrate 2x more
functions on a chip; chip cost does not increase significantly
■ Cost of a function decreases by 2x■ But …
► How to design chips with more and more functions?► Design engineering population does not double every two
years…
■ Hence, a need for more efficient design methods► Exploit different levels of abstraction
Z. Feng MTU EE5780 Advanced VLSI CAD1.10
Pentium 4■ Deep pipeline (2001)
► Very fast clock► 256-1024 KB L2$
■ Characteristics► 180 – 65 nm process► 42-125M transistors► 1.4-3.4 GHz► Up to 160 W► 32/64-bit word size► 478-pin PGA
■ Units start to becomeinvisible on this scale
Z. Feng MTU EE5780 Advanced VLSI CAD1.11
Pentium M■ Pentium III derivative
► Better power efficiency► 1-2 MB L2$
■ Characteristics► 130 – 90 nm process► 140M transistors► 0.9-2.3 GHz► 6-25 W► 32-bit word size► 478-pin PGA
■ Cache dominates chip area
Z. Feng MTU EE5780 Advanced VLSI CAD1.12
Core2 Duo■ Dual core (2006)
► 1-2 MB L2$ / core■ Characteristics
► 65-45 nm process► 291M transistors► 1.6-3+ GHz► 65 W► 32/64 bit word size► 775 pin LGA
■ Much better performance/power efficiency
Z. Feng MTU EE5780 Advanced VLSI CAD1.13
Core i7■ Quad core (& more)
► Pentium-style architecture► 2 MB L3$ / core
■ Characteristics► 45-32 nm process► 731M transistors► 2.66-3.33+ GHz► Up to 130 W► 32/64 bit word size► 1366-pin LGA► Multithreading
■ On-die memory controller
Z. Feng MTU EE5780 Advanced VLSI CAD1.14
Atom■ Low power CPU for netbooks
► Pentium-style architecture► 512KB+ L2$
■ Characteristics► 45-32 nm process► 47M transistors► 0.8-1.8+ GHz► 1.4-13 W► 32/64-bit word size► 441-pin FCBGA
■ Low voltage (0.7 – 1.1 V) operation► Excellent performance/power
Z. Feng MTU EE5780 Advanced VLSI CAD1.15
■ A plethora of VLSI CAD problems
Devices, interconnects, circuits, systems, signal, power, analog, digital …..
Z. Feng MTU EE5780 Advanced VLSI CAD1.16
Design Abstraction Levels
n+n+S
GD
+
DEVICE
CIRCUIT
GATE
MODULE
SYSTEM
Z. Feng MTU EE5780 Advanced VLSI CAD1.17
■ Where are we in the design flow?Specifications
System-level Design
RTL-level Design
Gate-level Design
Transistor/Circuit Level
Final Verification
Layout
Top-down Design
Bottom-up Verification
Electrical & Thermal Properties,Delays, Waveforms,Parasitics Effects, Coupling Noise …
Z. Feng MTU EE5780 Advanced VLSI CAD1.18
Design Metrics■ How to evaluate performance of a digital
circuit (gate, block, …)?►Cost►Reliability►Scalability►Speed (delay, operating frequency) ►Power dissipation►Energy to perform a function
Z. Feng MTU EE5780 Advanced VLSI CAD1.19
■ Why circuit analysis?
►Performance verification
▼A critical step for evaluating expected performanceprior to manufacturing
▼Simulation is always cheaper and more efficient than actually making the chip
▼True more than ever for today’s high manufacturing costs
Z. Feng MTU EE5780 Advanced VLSI CAD1.20
■ Why circuit simulation (cont’d) ?
► Design optimization/synthesis
▼Need to evaluate circuit performances many times in an optimization loop before meeting all the specs
▼Can only be practically achieved via simulation (models)
Circuit Optimizer
SimulationEngine
Update design parameters
PerformanceEvaluation
Meet all specs?
YesNo
Convergence
Z. Feng MTU EE5780 Advanced VLSI CAD1.21
■ Why models?► Models are integral parts of system simulation and/or optimization
Abstract Executable Models
Abstract Executable Models
Cycle AccurateModels
Cycle AccurateModels
VHDL/Verilog Models
VHDL/Verilog Models
InterconnectGate ModelsInterconnectGate Models
Device ModelsDevice Models
Cost
Speed
High
Low
Low
High
Z. Feng MTU EE5780 Advanced VLSI CAD1.22
■ Assessment of simulators
Accuracy
RuntimeMemory
Accuracy
RuntimeMemory
Accuracy
RuntimeMemory
Robustness/Applicability
Z. Feng MTU EE5780 Advanced VLSI CAD1.23
■ Selected Topics
►Classical circuit simulation methods (SPICE)▼LU factorization, Newton’s method
▼(Modified) nodal formulation (MNA)
▼Nonlinear DC analysis
▼AC analysis
▼Linear/nonlinear transient analyses
▼SPICE device models
Z. Feng MTU EE5780 Advanced VLSI CAD1.24
■ Many problems are modeled by some form of coupled (nonlinear) first-order differential equations
■ For circuit problems this is usually done using MNA formulation
3v
f(v)i 1v2v 4vC
R
v
Z. Feng MTU EE5780 Advanced VLSI CAD1.25
N dimensional vector of unknownnode voltages
vector of independent sources
nonlinear operator
0)()()(12
4131 vvfR
vvdt
vvdC
0))(),(),(( tutxtxF Xx
)0(
)(tx
)(tu
F
■ Write KCL (Kirchoff’s Current Law) at node 1:
■ If we do this for all N nodes:
Z. Feng MTU EE5780 Advanced VLSI CAD1.26
How can we solve this set of nonlinear differential equations?
0))(),(),(( tutxtxF Xx
)0(
■ Closed-form formula/hand analysis easily becomes infeasible
■ Need to develop computer programs (circuit simulators) to solve for the solution numerically