先進電漿電源之發展現況 current status of advanced plasma ...™³世民-先進電...with...
TRANSCRIPT
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
先進電漿電源之發展現況
Current Status of Advanced Plasma Source
陳世民 (David Chen)Tel: +886-3-666-1106; Mobile: [email protected] ; www.libra-tech.com.tw力寶來科技股份有限公司 (LIBRA TECHNOLOGY CORP.)地址: 新竹市東區關新路27號18樓之2
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Libra Technology 1
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
Content
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DC Power Supply Ignition Voltage Maximum Voltage/Current (Wider impedance range) Arc Management (Voltage/Current/Cross Detection) Low residual arc energy DC Pulse Power Supply
MF Power Supply Sinusoidal MF Power Supply Bipolar MF Power Supply
RF Power Supply High efficiency / Pure 50 ohm amplify CombineLine Technology / High accuracy at low power Arc management / Mach Box
High Power Impulse Magnetron Sputtering (HIPIMS) Power Supply What is HIPIMS? HIPIMS Technology HIPIMS Applications (Hard coating, Oxide Reactive Sputtering,
Semiconductor Trench Filling, Coatings on plastic webs or foils, CIGS coating, Passivation coating, Textile Coating )
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
Making a plasma
Exhaust
Input
Outpu
t
Ultra-High
Vacuum
pump
Input
Outpu
t
High
Vacuum
pump
Input
Outp
utRoughin
g pump
Ar O2
DC power
supply Substrate/
wafers
Cathod
e
Valve
s
Plasm
a
cloud
Anode
Target
• Pumps create vacuum in chamber
• Process gas enters• Voltage is applied with
power supply• Plasma Ignites• Plasma process is run
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TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
Sputtering
• Conductive or semi-conductive targets
• Target voltage ionizes gas (plasma)
• Target voltage (-) attracts gas ions (+)
• Gas ions bombard the target
• Bombardment vaporizes target atoms
• Vapor condenses on substrates (film)
Electron (primary)leaves (-) electrode
Primary electroncontinues toward (+)
secondary electron
All electronsattracted to (+)
Avalanche ofcollisions occurs
All ions (+) areattracted toward (-)
+
+ +
Electrons are thekey to ionization
Create ions and electrons:
e-+Ar Ar++2e-
dc power supply
vacuum pumps
pu
mp
exh
au
st
-
+
substrate
target
plasma
cloud
working gas
vacuum chamber
4
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
DC Magnetron Sputter
for conductive film
DC power supply
vacuum pumps
pum
p e
xhaust
substrate
targetplasma
cloud
working gas
vacuum chamber
NSSN
Magnets
5
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
Ion Plating (DC Bias)
vacuum pumps
pum
p e
xhaust
dc power supply-
+
substrate
target
plasma cloud
working gas
(500 V typ.)
vacuum chamber
N S
dc voltage supply (200 V typ.)
-
+
• Gas ions attracted to “growing” film
• Low energy bombardment hardens film
• Voids are filled• Surface is
smoother• Coefficient of
friction is reduced• Higher resistance
to wear
6
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
Mechanics of Ion Plating
Inert
Plasma
Cloud
+-
+-
0
0+
-
+++
DC
voltage
bias
+ -Compacted
hard film
Sputtered
atoms
Gas
ions
Growing
film
7
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
Power Characteristics - 1
8
TruPlasma DC 3000 Series (water cooled) power characteristic (with 1500 V ignition)
U
IImaxIn/2.50
Pmax
1000V
400V
1500V
Ignition Voltage : 1500 V
Maximum Voltage : 1000V
Maximum Current :
Power Current
20KW 50A
40KW 100A
60KW 150A
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
Materials
DC for conductors MF for semiconductors RF for insulators
Process Issue for Sputtering - Arcing
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TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
Arc Punch-through
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TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
Sustained Arc
11
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
Arc spot cathode, droplets at the substrate,
(copper) (copper)
Arcs Influence
12
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
Nature of an Arc
• An arc is a stable plasma discharge in a vacuum environment
• Charge carriers are electrons (generated from the hot spot) and ions from the plasma Current increase & Voltage drop
• Cause damage to the substrate, film, and target surface
What Causes Arcs?• Punch-through on an insulating layer is the
primary cause of target arcs• Occurrence of small areas of negative
plasma impedance• Local area of high electron emission on
insulating layers• mechanical damages on target surface
13
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
Arc Detection - Current Criteria (Imax)
Power Characteristics - 2
14
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
Arc Detection - Voltage Criteria (dU)
Power Characteristics - 2
15
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
Arc Detection - Voltage&Current Cross Detection Criteria
Power Characteristics - 2
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TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL 17
UxI cross
detection enabled
In case of
“Restart into Arc” or
“Secondary Arc”
Current rises quickly
Voltage remains low
faster shutdown
prevents damage
Power Characteristics - 2
Why Cross Detection ?
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL 18
UxI cross detection combines the benefits of dU and Imax detection
dU enables very quick detection of arc events
Imax reliably detects secondary arcs (process start-up into a burning arc)
Imax does not trigger arc events in case of “false arcs” (voltage fluctuations
in the plasma)
First Arc vs. Secondary Arc reaction
Power Characteristics - 2
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL19 2009-02-12 TE221vo
Generator
Power Supply
leadsL
Chamber1D
2D
SS
C
leadsL
C-D
SS
+
SS
Low residual Arc Energy level
Fast return to Iout = 0 enables fast restart
SS Serial Switch
D1 Freewheeling diode
D2 Bypassing diode
C Capacitor
C-D Discharge circuit
Power Characteristics - 3
19
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
Arc Management without CompensateLine
20
Power Characteristics - 3
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
Arc Management with CompensateLine
21
Power Characteristics - 3
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
Arc Management with and without CompensateLine
22
Power Characteristics - 3
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
Active Solution to Arcing
• In the event of an arc, reduce the energy delivered and respond quickly
• Prevent the buildup of energy at the surface
Breakdownvoltage
Time
Arc
Zero volts
Voltage
(acro
ss
the film
)
Charge-up rate of an insulating filmis a function of dielectric constant ofthe film, thickness of the film, andprocess current level.
Breakdown voltage is afunction of film thicknessand dielectric constant.
23
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
Active Solution to Arcing
Time
Arc
Zero volts
Voltage
(acro
ss
the film
)Reversing target voltagedischarges insulating film
BreakdownVoltage
24
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
Active Solution to Arcing – DC Pulse Power Supply
Power Characteristics - 4
25
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
DC Pulse Single Cathode Reactive Sputtering
for Dielectric Film
Ex1: Si+2O+ SiO2
Ex2: 2Al+3O+ Al2O3
Problem Disappear Anode Problem not good for mass-
production
Argon FlowO2 Flow
Needs to be veryclose with fast valve(MFC too slow, need
more like piezo-electric valve at 2ms
speed)
Pump 1: Diffusion Pump (Ar + O2)
#BEAC11#E:\PHOTO_CD\IMAGES\IMG0007.PCD607116320842836238362836238362PB4011203602540
(-)
+
++
+
+
+
-
-
-
-
-
-
Ions
Pump 2:Getter Pump
(Al + O2)
-
Want to operate with slightexcess of O2 flow. Moresecondary electrons are
released as SiO2 is createdon target which effects
plasma density anddecreases voltage
XValve Controller
Setpoint
Feedback (FromP.S. or PEM)
26
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
DC Pulse Bias for Cathodic Arc Deposition
Output Voltage:
HV mode: Up to 1000 V
for discharge
LV mode: Up to 300 V
for deposition
27
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
MF Power for Dual Cathode Reactive Sputter
(for preventing disappear anode problem)
20 ~ 100KH, Sinusoidal MF Power
Supply: TruPlasma 3000
28
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
MF Dual Cathode Reactive Sputter
with Closed Loop Control (for Dielectric Film)
Argon FlowO2 Flow
Needs to be veryclose with fast valve(MFC too slow, need
more like piezo-electric valve at 2ms
speed)
Pump 1: Diffusion Pump (Ar + O2)
(-)
Ions
Pump 2:Getter Pump
(Al + O2)
XValve Controller
Setpoint
Feedback (FromP.S. or PEM)
+
+
-
-
-
+
+
-
-
-
(+)
Ex1: Si+2O+ SiO2
Ex2: 2Al+3O+
Al2O329
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
Dual Cathode Reactive Sputter – Sinusoidal MF Power Supply
Power Characteristics - 5
30
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
Dual Cathode Reactive Sputter – Bipolar Power Supply
Power Characteristics - 6
31
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
Reasons to Use RF power
• when processes you can’t do with DC
• Bi-directional ion movement
• Sputtering of dielectrics
• Voltage biasing of dielectrics
• Etching of dielectrics
• PECVD of dielectrics
• 10X - 100X greater ionization than DC
• More atomic disassociation of compound gasses (in the plasma state)
32
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
DC Capacitive Charge-up
Plasma cloud
- - - - - - - - - - - - - - - - - - - - - - - - -
+ + + + + + + + + + + + + + + + +
Electrical insulator
DC voltage source
Surface
charge
Gas ions+ ++
+
+
33
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
AC Capacitive Discharge
Plasma cloud
- - - - - - - - - - - - - - - - - - - - - - - - -
+ - - - + - - - - - + + + - + - - - - + - - - - +
Electrical insulator
RF voltage source
Reduced
surface
charge
Gas ions +++ + +
34
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
What is RF power?
AC frequencies above 20 kHz (audio)AC frequencies below 300 MHz (microwave)FCC RF frequency ranges Low frequency: 30 kHz - 300 kHz Medium frequency: 300 kHz - 3 MHz High frequency: 3 MHz - 30 MHz Very high frequency: 30 MHz - 300 MHz
Many people call 13.56 MHz “RF”
LF MF HF
FCC frequency classification
30k 300k 3M 30M
13.56M4.0M1.0M100k25kHz
2 M 27.12M 40.68M
VHF
35
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
RF Magnetron Sputtering for Dielectric Film
RF Power
vacuum pumps
pum
p e
xhaust
substrate
targetplasmacloud
working gas
vacuum chamber
NSSN
Magnets
36
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
DC Sputter with RF Voltage Bias
vacuum pumps
pu
mp
exh
au
st
dc power supply-
+
substrate
target
plasma
cloud
working gas
(500 V typ.)
vacuum chamber
N S
RF voltage bias
(200 V typ.)
-
+
37
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
RF Power Supply
Process
Chamber
RF Generator Matching Network
38
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0 500 1000 1500 2000 2500 3000
Output Power, W
Efficiency Comparision (3 kW devices)
Apex
Sure Power
Paramount
SSM3000
Supplier 1
Supplier 2
Supplier 3
Hüttinger
TruPlasma RF Series 3000
Eff
icie
ncy c
on
ve
rsio
n
* Class D Amplify
Power Characteristics - 7
Huettinger RF3000 achieve 80% power transfer efficiency : Green Energy
39
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
TruPlasma RF Series 3000
PowestagePredrive
PowerLoad
Power
predrive
loadP
P
PG
Measurement:HV 100V (no regulation)
abs(Γ)= [ 0 : 0.1 : 0.9]
Angle(Γ)= [-180° : 10° : 180°]
The power gain of the RF power stage is reduced in case the load
impedance is not identical to 50 Ohm. This effect results into inherent
reduction of the output power in case of sudden mismatch. This
reduction does not require any action of the module control and is
able to follow the fastest plasma fluctuations and events like arcs.
Power gain
Load impedance
Power Characteristics - 8
Huettinger RF3000 special pure 50 ohm power gain characteristic
40
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL41 September 2011
50 point
50 point
In case of mismatch situations
(= deviation from 50 point),
it is possible that additional power
is delivered into the process.
If an impedance mismatch occurs
(= deviation from 50 point),
power delivery into the process is
always reduced.
Less power
More power
Less power Less power
Typical RF gain characteristic TRUMPF Hüttinger RF gain characteristicPowerPower
Comparison of RF gain characteristics
Power Characteristics - 8
41
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
TruPlasma RF Series 3000
RF supply 11.5 kW
Phase 0°Class D
RF supply 21.5 kW
Phase 90°Class D
Plasma
Load
Absorber on heat sink
(cooling plate)
Forward power Pi
1 W .. 3000 W
PR reflected
power
Reflected power PR
Max. cont. 600 W
Matchbox
(auto/fix)tune to 50
50 RF cable
13.56 MHz
RF combiner
CombineLine
Load power PL= Pi-PR
50
CombineLine Technology : inherent robustness
allow Continuously output at 20% reflection
Power Characteristics - 9
42
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL43 September 2011
External clock signal control for two internal Class D power supplies allows
adjustment of phase difference between infeed power portions:
Very precise control for phase shift
Very fast reaction
Broad output power range:
1 W to 3000 W
Continuously high accuracy
(± 3W or ± 2% of set point
whichever is greater)
Load 50
RF supply 1
1.5 kW
Phase 0°+ΔφClass D
Absorber
50
CombineLine
1 3
4 2
Phase shift regulation mode: Accuracy at low power
Power Characteristics - 10
43
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL44 September 2011
Output control
Range 400 .. 3000 W :
Via DC source power
level control
(lower DC power lower RF output)
Range 1 .. 400 W :
Via phase shift regulation
Film deposition at very low power levels:
Very accurate power control
Excellent power stability for best
reproducibility results
(internal power supplies operate
at well-conditioned power level of 200 W)
Load 50
RF supply 1
1.5 kW
Phase 0°+ΔφClass D
RF supply 2
1.5 kW
Phase 90°-ΔφClass D
Absorber
50
CombineLine
1 3
4 2
Phase shift regulation mode: Accuracy at low power
Power Characteristics - 10
44
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
Δφ = 0° 100%
Operation mode of two internal power supplies
stays at 150 W forward power each
Shifting of phase allows sweep of full range 300
W .. 1 W at high accuracy
(Excess power is lead into absorber)
High Accuracy < 1,5% demonstrated with actual
measurement (HATS standard)
Above 300 W adjustment is done via DC source
power control Energy efficiency
Δφ = 100°
Δφ = 160°
Internal power
supply output
(phase-shifted)
Internal power
supply output
(phase-shifted)
Resulting
Output
(super-
imposed)
Resulting
Output
(super-imposed)
Phase shift regulation mode: Accuracy at low power
Power Characteristics - 10
45
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
An arc event is indicated if the reflected power level exceeds the defined threshold Pr [W].
TruPlasma RF Series 3000
Threshold Pr
= 1200 W
Arc Detection – Threshold detection of reflected power
Power Characteristics - 11
46
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
An arc event is indicated if the power reflection factor exceeds the defined threshold Pr/Pi [%].
TruPlasma RF Series 3000
Threshold Pr/Pi
= 40 %
Power Characteristics - 11
Arc Detection – Threshold detection of power reflection factor
47
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
An arc event is indicated if the reflected power rises faster than the defined slope value in [W/Tsample].
TruPlasma RF Series 3000
Slope ΔPr / (n*Tsample)
= 600 W / 1*Tsample
ΔPr/ sample = 400 W ΔPr/ sample = 1000 W
Arc event indication
No arc event indication
1 sample ≈ 100ns
Power Characteristics - 11
Arc Detection – Slope detection of reflected power
48
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
An arc event is indicated if the power reflection factor rises faster than the defined slope value in [%/Tsample].
TruPlasma RF Series 3000
Slope Δ(Pr/Pi) / (n*Tsample)
= 30 % / 1*Tsample
Δ(Pr/Pi)/ sample = 15 %
Δ(Pr/Pi)/ sample = 35 %
Arc event indication
No arc event indication
1 sample ≈ 100ns
Power Characteristics - 11
Arc Detection – Slope detection of power reflection factor
49
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
To clarify the keywords used in the parameter definitions, this figure introduces the most relevant ones.
TruPlasma RF Series 3000
Burst = Defined number
of pulses
Retry = Repetition of
burst
Pulse = Supression time + Pulse on time
Su
pp
ressio
n
tim
eP
uls
e o
n tim
e
Power Characteristics - 11
Arc Reaction – Reaction keyword definitions
50
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL 51
TruPlasma Match 1000/13 NEW Series : 0.5 sec match & smith chart
Power Characteristics - 12
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
Summary of Sputtering
Materials DC Power for conductive target DC Sputter DC Sputter + DC Bias at substrate Ion Plating DC Pulse Power for conductive target DC pulse sputter MF or DC Pulse for semiconductor MF reactive sputter RF Power for insulators RF Sputter
If we want to get better film quality,
what is next solution? HIPIMS
Cathodes DC Single Cathode Conductive Film Sputter RF Single Cathode Dielectric Film Sputter DC Pulse Single Cathode Reactive Sputter for Dielectric Film Sinusoidal MF Dual Cathode Reactive Sputter for Dielectric Film Bipolar MF Dual Cathode Reactive Sputter for Dielectric Film
52
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
What is HIPIMS?
HIPIMS = High Power Impulse Magnetron Sputtering
53
DC Sputtering
Pulsed DC
106
105
104
103
102
Po
we
r [W
]
Time
HIPIMS
DC – always on
Pulsed DC – mostly on
HIPIMS – mostly off
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
What is HIPIMS?
54
DC, pulsed DC or RF generators have output power levels in kW.
HIPIMS provides peak power output levels in MW (Megawatt).
… however HIPIMS is 99 % off MW only for 1 % of the time.
… so average HIPIMS power is also in kW.
10 ms
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
HIPIMS Technology
55
HIPIMS acts as large area ion source (ions of the sputter target material)
Ionization density up to 95% (controllable via pulse repetition rate and duration)
Can etch with these ions (high bias)
Can grow dense coatings with these ions (low or no bias applied to substrate or specimen)
TruPlasma
Highpulse 4001
TruPlasma Bias
(specialised for
HIPIMS application)
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
HIPIMS Technology
Ionization of Sputtered Atoms
56
A.P. Ehiasarian, 2004 Society of Vacuum Coaters
Higher pulse current
more ionization.
Need > 100 µs pulse duration to see much ionized material.
Pulse longer than 200 µs not increase ionisation any moreControl of ionization percentage
via pulse current and time.
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL 57
The basic HIPIMS power supply comprises
• DC Charging power supply• Storage capacitors• Control switches• Pulse shaping inductors
Circuit From : “Ionized physical deposition (IPVD) : A
review of technology and applications”, U. Helmersson, M
Lattemann, J. Bohlmark, A.P. Ehiasarian, J.T.
Gudmundsson, Thin Solid Films, 513, Issue 1-2, (2006), 1-
24
HIPIMS Technology
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
HIPIMS Technology
Pulse Current, Pulse Length & Pulse Frequency
58
Fix the pulse length and pulse current to give us required ionization level.
Energy in a pulse is
Epulse
≈ 0.5 x Vpulse
x IMAXpulse
x pulse length
Average power is
Pavg
= Epulse
x Pulse frequency
The average power has a maximum level determined by
the cooling capacity of the magnetron
the rating of the power supply.
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
TruPlasma Highpulse Series 4000 : Technical Specification
59
2 … 1K Hz
Power Characteristics - 12
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
HIPIMS Application
Typical Applications
60
Decorative Coating
Hard Coating for machining tools Semiconductor Applications
Eco-textiles
Performance textiles Functional textiles
Smart textiles
Textiles Coating
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
61
Droplets visible on surface
TruPlasma ARC 3000
Droplet free film
TruPlasma Highpulse 4000
HIPIMS for Droplet-free deposition SEM TiN IMAGES
with TruPlasma Highpulse Series 4000
vs
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
Ions make coatings denser
Ideal case is lots of ions in
plasma
(>20% of coating material)
HIPIMS hard coatings show
much better wear resistance
HIPIMS for Improved wear resistance in Hard-Coating Applications
with TruPlasma Highpulse Series 4000
62
A.P. Ehiasarian et al. /
Thin Solid Films 457 (2004) 270–277
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
HIPIMS for Semiconductor Applications – Trench Filling
63
Semiconductor surface structures
smaller, so it is harder to fill
trenches.
Cannot control the arrival angles of
neutral atoms/particles
Can control the arrival angles of ions
HIPIMS generates highly ionised
particle flux, which can be directed
via biased substrate
Controlled angles give much better
deposition down trenches or holes.
Cu-filled trench produced with
HIPIMS, by Kouznetsov et. al.
BIAS power
applied to
substrate
Usual sputter trench filling.
with TruPlasma Highpulse Series 4000
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
HIPIMS for CIGS solar cells
HIPIMS power deposition process
64
Normal DC or pulsed DC for Cu
sputtering in CIGS process
HIPMS was used as drop-in
Good ionisation of Cu atoms
was observed (PEM graph)
(Cu lines are more prominent than Ar lines in spectrum)
Images and data courtesy of
DayStar Technologies
HIPIMS on 1.5m Rotatable Magnetron
0
1000
2000
3000
4000
5000
6000
200 300 400 500 600 700 800 900 1000
wavelength (nm)
PE
M i
nte
ns
ity
HIPIMS
DC
Metal/ Metal ion peaks (Cu,
In, Ga)Argon peaks
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
HIPIMS for CIGS solar cells
HIPIMS power deposition process
65
Larger grains favorable
for solar cell efficiency
Realised cell conversion
efficiency CE = 13.1%
As a first step, it was shown
that a solar cell can be made
with HIPIMS
Next step: Optimisation of
HIPIMS effects on film
properties
Images and data courtesy of
DayStar Technologies
500 nm
CIGS by
HIPIMS
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0 0.1 0.2 0.3 0.4 0.5 0.6
Voltage (V)
Cu
rren
t (A
)
Voc = 563 mV
Jsc = 33 mA/cm2
FF = 69.9 %
CE = 13.1 %
Area = 0.43 cm2
TRUPLASMA HIGHPULSE SERIES, name name ■ CONFIDENTIAL
HIPIMS for Reactive Sputtering Applications
with TruPlasma Highpulse Series 4000
66
HIPIMS significantly changes the
hysteresis loop of reactive
sputtering.
The DC case does not allow high
rate sputtering of the oxide.
if HIPIMS is used for the same
process then the target is kept
metallic at significantly higher
oxygen flows, and most
importantly Aluminium Oxide
can be sputtered at much
higher rates than for the DC
case. Wallin and Helmersson believe that this improvement
is due to the high peak target currents acting to keep
the target surface free of reaction productions
(poisoning). Target poisoning between pulses is
minimal no plasma to activate these reactions.
DC hysteresis curve for Aluminium
reactively sputtered in Argon and OxygenE. Wallin, U. Helmersson, Thin Solid Films (2007),
doi:10.1016/j.tsf.2007.08.123
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HIPIMS coatings on plastic webs or foils (1)
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HIPIMS produces low substrate heat load for the same input average power
Delivering the power as pulses
peak power can be enormous (MW) … while the average power is still within
the cooling limit of the magnetron (kW)
Factor of 3.5 and 10 times lower in HIPIMS mode compared to continuous DC
and pulsed DC modes
CFUBMS system (UDP450) Teer Coatings Ltd.
300 x 100 mm unbalanced magnetrons
Target material: Titanium
TruPlasma Highpulse 4001, pulses up to 1MW
(1kA, 1kV), average power up to 2kW, pulse
frequency up to 1 kHz
Normalised thermal energy loading rates for deposition at 1nm/sec
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HIPIMS coatings on plastic webs or foils (2)
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Operating the HIPIMS power supply with many pulses of lower power
keeps the average power high
maintains a good deposition rate
has very low heat load on the substrate
Film deposition on plastic foils is possible with HIPIMS
advantage over pulsed DC or DC sputtering processes
Reference: HIPIMS Magnetron Sputtering onto plastic webs P. Barker1, G West1, D. Ochs2, P. Ozimek3, J Bradley4, P. Kelly1, A. Mishra1, A.G.
Spencer5 1 Manchester Metropolitan University, UK 2 TRUMPF Hüttinger GmbH + Co. KG, Freiburg, Germany 3 TRUMPF Hüttinger Sp. z.o.o., Zielonka, Poland, 4 Liverpool University, UK 5 Alacritas Consultancy Ltd.,Leicestershire, U.K.
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HIPIMS for Textile Coating
Low process temperature
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Stronger effect Medium effect Weaker effectAg Cd AlBi Pt CoCu Si CrMo Ti MgTl Mn
PbZn
Application I: Antibacterial textile
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Metallic Coating Metallic Fiber/Particle
Application II:EMS textile
EMS textileElectromagnetic Shielding
Shielding Effectiveness (SE) =The ratio of power received with (P1) andwithout (P2) a material present for the same incident power, 20 log P1/P2
SE↑Content of particle/fiber↑ or Coverage ratio ↑
SE↑ Conductivity ↑ (Continuous structure)
FTTS-FA-003 Specified Requirements of Electromagnetic Shielding Textiles.
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Application III:Far-IR textile
Passive heating Active heating
Surface Heating
Wire Heating
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Other applications enabled by HIPIMS power deposition processes
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Improved protection of HIPIMS surface-treated carbon steel against corrosion
Improved cutting performance (~10%) with tools pre-treated by HIPIMS
Low substrate temperature level enables foil coating applications
Surface texture control in TCO and SiN passivation film depositions
…
Sheffield Hallam University SHU
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The End
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