eiger: high frame rate pixel detector for synchrotron and ... · •largest deployed detector...
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WIR SCHAFFEN WISSEN – HEUTE FÜR MORGEN
EIGER: High frame rate pixel detector for synchrotron and electron microscopy applications
Gemma Tinti:: SLS Detector Group :: Paul Scherrer Institut
Vienna Conference on Instrumentation 2019
WIR SCHAFFEN WISSEN – HEUTE FÜR MORGEN
Detector development for Synchrotron and FEL applications
Erik Fröjdh M. Andrä, A. Bergamaschi, M. Brückner, S. Chiriotti Alvarez, R. Dinapoli, D. Greiffenberg, C. Lopez-Cuenca, A.
Mozzanica, M. Meyer, D. Mezza, S. Redford, C. Ruder, B. Schmitt, X. Shi, D. Thattil, G. Tinti, S. Vetter, J. Zhang
Vienna Conference on Instrumentation 2019
Paul Scherrer Institut
Neutron source
Muon source
Proton therapy
Proton accelerator
Nanotechnology
Radiochemistry
Radiopharmacy
Material sciences
Basel Zurich Germany Aarau/Bern
Hotlab
Particle physics
SwissFEL
Energy research
Biology
ESI Platform
Synchrotron Light Source
3
Staff: 2000
Users/year:
2300 people
5300 visits
What do we do in the detector group?
Bump and wire bonding
Lithography
Users support
Chips Sensors Electronics Firmware SoftwareMechanics
Assembly Commissioning
4
MYTHENII&III
EIGER GOTTHARDI & II
JUNGFRAU MÖNCH AGIPD
1D/2D Strip Pixel Strip Pixel Pixel Pixel
Working Mechanism
PhotonCounting
Photon Counting
Charge Integrating
Charge Integrating
Charge Integratin
g
Charge Integratin
g
Strip/Pixel size [µm]
50 75×75 25/50 75×75 25×25 200×200
Applications Powderdiffraction,
energy-dispersive
spectrometers, beam position.
Ptychography, coherentimaging,protein
crystallography.
@ FLASH,main energy-
dispersive detector for
EU-XFEL.
Spectroscopicapplications, high count
rateapplications at
XFELs & synchrotrons.
(Biological) imaging &
tomography, RIXS,
spectroscopy, Laue
diffraction.
Development for the EU-
XFEL.
Our detectors
5
• Single photon counting
1 global threshold
6 trimbits / pixel
• 75 x 75 μm2
• 256 x 256 pixels
• Noise 100-200* e- RMS
• Configurable: 4/8/12 bit counter depth
• Frame rate: 23/11/8 kHz
• Dead time free operation mode (3μs)
• Count rate dead time
EIGER: 200-600ns
Eiger
*Depending on gain setting
– fast frame rate, dead time free, photon counting
coun
ter
+1
E
I
Threshold VcmpAdj. Gain
6
• 2x4 chips
• Single 4x8 cm2 silicon sensor
• Sensor thickens 320 μm
• Dedicated read out system per half module
with 10Gb/s Ethernet for data output
Eiger: Module
Eiger module equipped with
ASICs but no sensor
2x pixel
4x pixel
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• Modules can be tiled to large area detectors
• Due to the parallel design there is no penalty in performance when moving from a
single module to multi module systems
Eiger: Detector
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24 x 23 cm
3072 x 3072 pixels
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• Charge integrating
• 75 x 75 um2 pixel
• 256 x 256 pixels
• Noise: 55e- (HG0 10us RT )
• Dynamic gain switching with 3 gain stages
Single photon sensitivity (from ~2 keV)
Dynamic range 104 12keV photons
• 1.1 kHz frame rate (2.4 kHz)
Jungfrau – dynamic gain switching, charge integrating
500k single module systemSame as Eiger
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Automatic gain switching scan:
• White visible light illumination
• Requires removing of Al top layer
• Increasing integration time• plots in unit of 12keV
photons
Gain switchGain switch
Poisson
statistical limit
~20 ɣ ~700 ɣ~700 ɣ ~10800 ɣ
Noise across dynamic range
11A. Mozzanica (PSI)
• Charge integrating
• 25 x 25 μm2 pixel size
• 400 x 400 pixels
• Noise ~ 36e-/pixel
• Configurable but static gain
• Frame rate 3 kHz (6kHz)
• Two side buttable
Mönch
Mönch 03
– small pixels, low noise, charge integrating
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Bump bonding
Hit map from Ge Kα fluorescence
Yield better than 99.95%
Pilatus 172 μm Eiger75 μm
x5.3
Mönch25 μm
x47
• Standard process
• Performed in-house at PSI
• Indium balls of diameter ~ 15 μm
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High resolution imaging using interpolation
MÖNCH used as a photon counter (after clustering)
11 keV beam - Nanoscopium beamline, SOLEIL
No position interpolation
25 µm bins (pixels)
With position interpolation
1 µm bins
Measurement with: K. Medjoubi (SOLEI) Image processing: M. Ramilli (PSI)
Requires the primary track (ion, electron, photo electron) to be short
compared to pixel sizeFixed pattern due to that the charge sharing is position dependent
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Page 15
Sensors characterization with Jungfrau
Silicon CdTe GaAs
Sensor production Hamamastsu Acrorad Tomsk State University
Type p-on-n Schottky Cr compensated, Ohmic
Bump bonding PSI Advacam PSI
Thickness 320 um 750 um 500 um
Pixel size 75 x 75 um2 75 x 75 um2 75 x 75 um2
Bias voltage 200 V -500 V -300 V
Leakage current < 1uA 1.5uA 35uA
Si GaAsCdTe
4cm
8 cm
Silicon
Microscopes
Philips CM12 20-100 keV Geant4 pixel simulation framework
A. Schubel et al. A Geant4 based framework for pixel detector simulation, JINST 9, 2014
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Page 18
Simulation of lateral spread
Page 19
Simulation of electron range
Page 20
Energy [keV]
Cluster size – Silicon sensor
Page 21Sensor thickness: 320 um
MTF with single particle processing 100 keV
Page 22
Energy response
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GaAs 2us exposure time data with linearity correction applied
Silicon 10us no correction
CdTe 10us no correction
Energy response at 80 keV
Page 24
Measured efficiency of CdTe and GaAs
Page 25
Normalized using simulated Silicon efficiency, th 2.5keV
• SLS Detector group is developing strip and pixel detectors for photon science
applications
• Largest deployed detector system Jungfrau 16M Eiger 9M
• Working on larger area dynamic gain switching Mönch
• Electron detection with High Z sensors
• Thin entrance window sensor for low energy photon and electron detection
Summary
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SLS Detector Group
Page 27
Subpixel interpolation
T/(T+B)
R/(R+L)
• The signal is fully contained in
a 2x2 pixels cluster
• We analyze the ratio between
neighbors
η𝑥=0∙𝐿𝑒𝑓𝑡+1∙𝑅𝑖𝑔ℎ𝑡
𝑅𝑖𝑔ℎ𝑡+𝐿𝑒𝑓𝑡
η𝑦=0∙𝐵𝑜𝑡𝑡𝑜𝑚+1∙𝑇𝑜𝑝
𝐵𝑜𝑡𝑡𝑜𝑚+𝑇𝑜𝑝
• Custom algorithms must be
developed to correct for non
linear charge sharing
28A. Bergamaschi (PSI)
• The spatial resolution is higher in
the corner between pixels than in
the center of the pixels due to
limited charge sharing
• Energy dependent Higher energies, higher SNR
Lower energies, larger charge sharing
• Possible improvements Smaller pitch
Thicker sensors
Lower bias voltage
Spatial resolution
6 keVPencil beam scan
experiment
@ cSAXS beamline, SLS
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25
0
Vertical resolution
0 25µm
3.3
1.4
µmµm
25
00 25µm
3.3
1.4
µmµm
Horizontal resolution
A. Bergamaschi (PSI)
Effect of removing top layer aluminum
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• Measured with Eiger at the SIM beamline at the Swiss Light Source
• Improves energy response and efficiency
• Still energy straggling in the entrance window
MTF measurements with EIGER
Page 31
Energy response GaAs 100 keV
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Simulated efficiency - Silicon
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1.5 um Aluminum as entrance window – Matched
energy response at 20keV
Clustering
Page 34