Ricardo Peterson Department of Electrical Engineering Extreme Environment Microsystems Lab (XLab) Stanford University

PI: Prof. Debbie Senesky Department of Aeronautics and Astronautics Department of Electrical Engineering (by Courtesy)

Electrothermal Modeling with Geant4 + COMSOL Integration

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Irradiation-induced M-S Interface Degradation

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As-DepositedStructure A0er120MeVAuirradia7on

R. Verma, C. Lal, and I. Prabha, “Formation of metal silicide by swift heavy ion induced mixing at Mn / Si interface,” Integr. Med. Res., vol. 3, no. 3, pp. 257–263, 2014.

Mn Mn

Time Evolution of Defects Comparable Duration of Thermal Spikes

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-Tang,D.,Mar/n-Bragado,I.,He,C.,Zang,H.,Xiong,C.,Li,Y.,…Zhang,J.(2016).Timedependentmodelingofsinglepar/cledisplacementdamageinsilicondevices.MicroelectronicsReliability,60,25–32.hMp://doi.org/10.1016/j.microrel.2016.03.004-A.Benyagoub,“Irradia/oneffectsinducedinsiliconcarbidebylowandhighenergyions,”Nucl.InstrumentsMethodsPhys.Res.Sect.BBeamInteract.withMater.Atoms,vol.266,no.12–13,pp.2766–2771,2008.

GOAL: To Simulate SETs and Thermal Spikes

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GEANT4 OUTPUT —> COMSOL

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Example: 4H-SiC Schottky DiodeXe 996 MeV/n

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100V(OhmicContact)

0V(Scho2kyContact)

Example: 4H-SiC Schottky Diode

1um (Region Depleted)

ND=1E16 cm-3

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Xe 996 MeV/n

1um (Region Depleted)

ND=1E16 cm-3

log10(Ne)100V(OhmicContact)

0V(Scho2kyContact)

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Temp. (K)

Temp. Distribution

100V(OhmicContact)

0V(Scho2kyContact)

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Ar 361 MeV/n

Xe 996MeV/n

Cu 566MeV/n

Kr 750MeV/n

LET (MeV-cm2/mg)

11 23 34 65

Current & Temperature vs. Time

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Temperature along Particle Track & Interface

12t ~ 10 ps

Extending Framework to Other Applications

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1GeV/n Ar Ion

12um

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MOSFETs

12um

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ChargeCollec+onRegion

{ChargeCollec+onRegion

{

0 2 64Par$cleStrike[!m]m] 1 3 5Particle Strike Location [um]0 6

Charge[fC]Collected

80

60

40

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Charge Collected [fC]@ Drain

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40

60

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Vdd = 2 VVgs = 0 V1GeV/n Ar Strike

INTEGRATION WITH COMSOL’S APPLICATION BUILDER

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Thank You

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