embedded&passives..con0nued&€¦ · • resistors can be fabricated by 3 methods: ptf, foil and...
TRANSCRIPT
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Embedded Passives..con0nued
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Why Embedded Passives? • Improves the packaging efficiency • System-on-Package (SOP); SLIM integration • Reducing size • Eliminating substrate assembly • Minimizing solder joint failure and enhancing
reliability • Faster and cleaner electrical signals • Add functionality • More design flexibility? • Better reliability? • Pb-free • Cost savings; near-zero incremental cost?
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Challenges • Resistor tolerance and sheet resistivity:
– Both resistivity and thickness tolerances are goals which have not been met by resistor materials suitable for resistively required for widespread applications.
• Yields: – Yield loss per device must be extremely small
(~0.00001) because embedded resistors cannot be repaired.
• Cost: – Make new materials and processes cheap enough
to reduce the overall cost.
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Embedded capacitor
• Types of Embedded capacitor – Singulated. – Distributed.
• Types of materials – Inorganic – Organic
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Source: ITRI documents
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Dielectric constant (k) is an intrinsic material property that represents how well a capacitor stores charge when a voltage is applied. Although it is called the dielectric constant, the value changes based on many parameters such as temperature, frequency, voltage and time. As seen in the equation, high dielectric constant results in higher capacitance at a given space. For this reason, higher dielectric constant materials are desired in certain applications where space is limited.
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Design Library CEDT
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Embedded capacitor • Inorganic methods.
– Sputtering: • chemical vapor deposition (thin film deposition ,
practiced in micro-electronics industry). – Sol-gel:
• deposition of thin film of materials with higher dielectric constants. (PLZT-Lead Lanthanum Zirconium Titanate ferroelectric*).
– Anodization: • vacuum deposition of aluminum and tantalum to form
thin dielectric oxide layer. • Ferro electric materials exhibit spontaneous electric dipole moment, high crystal lattice order
• Para electric materials have crystal phases in which electric poles are unaligned
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Embedded capacitor
• Organic methods
– Polymers: • Simple ways of mixing and dispersion. But has low
permittivity, otherwise ideal choice. (polyvinylidene fluoride, polyvinylchloride, polypyrrole).
• Improved safety factor due to suppression of combustion, low ESR
• Mixed methods – Polymer-ceramic:
• To increase the dielectric constant.
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• A wide range of capacitance from 1pF to many uF is needed for various applications. • For filtering and termination relatively low capacitance of 1pF to 200pF is required.
• For decoupling and energy storage the range is a few nF to a few uF.
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Steps for fabrication of Embedded Capacitors
Figure Source: KJ Lee, Georgia Tech
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Steps for microvia and Cu addition
Figure Source: KJ Lee, Georgia Tech
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CAPACITORS
CEDT
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Complete Test vehicle (multi-layer organic substrate) with embedded R and C
Figure Courtesy: GTech
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Characterization Design Reference
for R Line
Width mm
R Foil Ω
1 2593
0.75 2545
0.50 2480
0.25 2470
0.25 423
0.5 441
0.75 470
1 474
Design Ref For Cap
Product A Product B
24µ 12µ
10 mm2 913 208 667
8 mm2 593 137 445
6 mm2 364 81 261
4 mm2 147 37 116
2 mm2 43 14 36
1 mm2 14 7 13
Values of Capacitors obtained in test Board based on area and geometry (pF)
Tests and Characterization • Adhesion Test: Copper on Dielectric to be checked • Dielectric Shrinkage- should be minimal • Thermal cycling: 125°C for 100hrs: less than 10% change in R and C values • Temp/Humidity cycling: 85°C/85%RH: less than 5% failures • Peel Strength: Ni-Cr foil and Ni-P electroless deposits
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Thermal Reliability and Electrical Test
600
650
700
750
800
0 20 40 60 80 100 120
Duration(Hrs.)
Resistance(Ohm
s)
Thermal stability of R by foil
360
370
380
390
400
410
420
0 50 100 150 200 250 300 350 400
Duration (Hrs)
Res
ista
nce
(Ohm
s)
85°C/85%RH cycling of R foil: 400 hours
600
700
800
900
0 20 40 60 80 100
Duration (Hours)
Res
ista
nce
(Ohm
s)Thermal Stability of R by electroless method
1.37nF
Source: CEDT & Georgia Tech
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Samples
R patterning after inner layer
Fully etched Capacitor patterns
Test board of C foil - first etch Inductor pattern on PWB
Cross-section of a microvia Test board with R and C
Resistors on Flex Epoxy Base
Resistors by PTF-R material
Prototype board with microvia
CEDT
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Ni-P Characterization Assembled Prototypes
Bath Ni % P %
Acetate 94.91 5.09
Alkaline 93.34 6.66
Citrate 94.95 25.05
~90 resistors embedded
Ni-P
0
5
10
15
20
25
10.000,
11.880,
13.760,
15.640,
17.520,
19.400,
21.280,
23.160,
25.040,
26.920,
28.800,
30.680,
32.560,
34.440,
36.320,
38.200,
40.080,
41.960,
43.840,
45.720,
47.600,
49.480,
51.360,
53.240,
55.120,
57.000,
58.880,
60.760,
62.640,
64.520,
66.400,
68.280,
70.160,
72.040,
73.920,
75.800,
77.680,
79.560,
EDAX of Ni-P from acetate and citrate baths: P content varies from 7-25%
SEM photographs of NiCrAlSi from foil, Ni-P from acetate and citrate baths; particle size ~2-3um
XRD analysis shows Ni microcrystalline peak; increase in P content shows lattice disorder of Ni phase
Source: CEDT
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Functional board with embedded R
CEDT
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Functional board with embedded C
CEDT
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Prototype board with embedded C and R
CEDT
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Case Study on PWB Miniaturization Implementation
Board Type No of layers
Component mounting
Type
Line widths used
Via type used
Approximate area of board
Board area
savings
Standard Double Sided
2 Through-hole 16, 20, 40 mils
TH via 55 mils
75.0 sq. inch
Standard Double Sided
2 Mixed type-THT and SMD
12, 16, 20 mils
TH via 55 mils
26.8 sq. inch ~60%
Multilayer 4 Mixed type-THT and SMD
06, 12, 16 mils
Microvia (100um) Buried and TH
16.8 sq. inch ~75%
Multilayer (build on
both sides)
6 Signal-4 Emb R-2
Mixed type-THT and SMD Emb R ~100 on two sides
06, 12 mils
Microvia (100um) Stacked
via
12.0 sq. inch ~82%
Multilayer (build on only
one side)
4 Signal-3 Emb R-1
Mixed type-THT and SMD Emb R~100 on one side
06, 08 mils
Microvia (100um) Stacked
via
12.0 sq. inch ~82%
CEDT work
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Conclusions • Microvia interconnects and Sequential build enables high density
packaging at board level. • Embedded Passives have been successfully designed by industry
and fabricated on multilayered organic substrate. • Enables System-on-Package architecture. • Resistors can be fabricated by 3 methods: PTF, Foil and Electroless
plating • Capacitors can be fabricated by foil and polymer-nanocomposite
routes. • Merges well with conventional PWB fabrication processes and
materials. • Eliminates through-hole and surface mount components, although
SMT is still highly popular. • Lead-free assembly enabled with embedded R and C. • No standard design library available for embedded components. • Laser trim of Resistors will yield better tolerance values. • Basic concerns like adhesion, peel strength taken care of. • Cost-effective epoxy substrates and interlayer dielectrics used. • Less than 10% variation in R, C values after thermal cycling and
humidity tests.
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Figure: Lord Corporation
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Role of Materials and Processes in Electronics Packaging
• Diverse and crucial role of materials in packaging
• Important proper0es of materials relevant to packaging
• Summary of Processes in packaging
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Role of materials in Microsystems packaging
Figure: ‘Fundamentals of Microsystems Packaging’ -Rao Tummala
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Figure: ‘Fundamentals of Microsystems Packaging’ -Rao Tummala
• Protection • Interconnection • Heat Dissipation
• Electrical connection
• High I/O density • Cu on Polyimide
• Copper • Aluminium • Gold
• Plastics • Epoxy + filters • Ceramics
• Compress Molding • Tape casting • Dry Pressing
• Reliability
• Environmentally friendly
• Permittivity • TCE • Thermal conductivity • Moisture Absorption
• Thermocomp. Bonding • Ultrasonic bonding
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Figure: ‘Fundamentals of Microsystems Packaging’ -Rao Tummala
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Role of Materials in electronics packaging
• Integrated Circuit Packaging – IC Packages
• IC Assembly • System-level packaging
– Boards – Board Assembly
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Packaging Materials and Processes
• Electrical Properties – Conductivity – Permittivity and loss tangent
• Thermal Properties – Thermal conductivity – Coefficient of thermal expansion – Glass transition temperature
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Packaging Materials and Processes
• Mechanical Properties – Young’s Modulus
• Chemical Properties – Surface tension and wetting – Adhesion
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Materials Processing • Thick-film processes
– Ceramic – Screen printing – Organic
• PWB processes • Thin-film processes
– PVD • Vacuum evaporation, sputtering
– CVD – Solution based: Physical
• Spin-coating, meniscus coating, dip coating – Solution based: Chemical
• Sol-gel deposition, Hydrothermal deposition, electroless and electroplating
• Photolithography
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Current and future trends in materials and processes
• Interconnections – Organic-based interconnects – Non-conductive adhesives – Anisotropic conductive adhesives (ACA) – Isotropic conductive adhesives (ICA)
• Low-dielectric constant dielectrics • Board materials • Underfill materials