enhanced fault location method for shunt capacitor banks

25
Enhanced Fault Location Method for Shunt Capacitor Banks H. Jouybari-Moghaddam – Western University Tarlochan Sidhu – University of Ontario Institute of Technology Palak Parikh, Ilia Voloh – GE Grid Solutions 2017 Texas A&MProtective Relay Conference

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Page 1: Enhanced Fault Location Method for Shunt Capacitor Banks

Enhanced Fault Location Method for Shunt Capacitor Banks

H. Jouybari-Moghaddam – Western University

Tarlochan Sidhu – University of Ontario Institute of Technology

Palak Parikh, Ilia Voloh – GE Grid Solutions

2017 Texas A&M Protective Relay Conference

Page 2: Enhanced Fault Location Method for Shunt Capacitor Banks

Outline

• Introduction

• Enhanced fault location method-Ungrounded double wye banks-Grounded double wye banks

• The new method flowchart and data for application setting

• Simulation model and method evaluation

• Conclusions

Page 3: Enhanced Fault Location Method for Shunt Capacitor Banks

Introduction• Over voltages, over temperature, manufacturing defects can

cause internal fa ilures of capacitor units

• The search of the faulty capacitor can in large high voltage capacitor bank can take significant time and should be reduced to expedite the repair process

• Fuseless and internally fused designs do not have any visual indication for the fa ilures

• By using fault location algorithms the search space can be reduced to 1/6 in double wye capacitor banks

• Detecting consecutive and ambiguous failures, live reportingof number of failed elements helps for preventivemaintenance and thus reducing unscheduled outages.

Page 4: Enhanced Fault Location Method for Shunt Capacitor Banks

• DOUBLE WYE UNGROUNDED BANKS

Ungrounded banks

C

C

C

N

N

N

Page 5: Enhanced Fault Location Method for Shunt Capacitor Banks

• Neutral current can be written in terms of left section currents using current division:

𝐼𝐼𝑁𝑁 = 𝐾𝐾𝐴𝐴 � 𝐼𝐼𝐴𝐴 + 𝐾𝐾𝐵𝐵 � 𝐼𝐼𝐵𝐵 + 𝐾𝐾𝐶𝐶 � 𝐼𝐼𝐶𝐶; 𝐾𝐾𝑝𝑝= 𝑋𝑋𝑝𝑝𝑟𝑟

𝑋𝑋𝑝𝑝𝑙𝑙 + 𝑋𝑋𝑝𝑝𝑟𝑟; 𝑝𝑝 ∶ 𝐴𝐴,𝐵𝐵 𝑜𝑜𝑜𝑜 𝐶𝐶

A compensated quantity is derived by subtracting the before failure from after failure neutral current in each phase

𝐼𝐼𝑁𝑁𝐶𝐶𝐶𝐶𝐶𝐶𝑝𝑝 = 𝐾𝐾𝐴𝐴𝐴𝐴 − 𝐾𝐾𝐴𝐴 � 𝐼𝐼𝐴𝐴

• This comes to a phase angle balance equation (basis for decision making)

∠𝐼𝐼𝑁𝑁𝐶𝐶𝐶𝐶𝐶𝐶𝑝𝑝 = ∠𝐼𝐼𝐴𝐴 − ∠ 𝑋𝑋𝐴𝐴𝑙𝑙 − 𝑋𝑋𝐴𝐴𝐴𝐴𝑙𝑙

Ungrounded banks

Reference Phasor

Page 6: Enhanced Fault Location Method for Shunt Capacitor Banks

• The current is written in terms of symmetrical components to reduce the number of unknowns:

𝐼𝐼𝑁𝑁 = 𝐾𝐾1 � 𝐼𝐼1 + 𝐾𝐾2 � 𝐼𝐼2

𝐾𝐾1 = 𝐼𝐼1∗�𝐼𝐼𝑁𝑁− 𝐼𝐼2�𝐼𝐼𝑁𝑁∗

𝐼𝐼1 2− 𝐼𝐼2 2 ; 𝐾𝐾2 = 𝐾𝐾1∗

• To make phase comparison adjustable for both internally fused and fuseless bank we incorporate a sign factor

𝐼𝐼𝑁𝑁𝐶𝐶𝐶𝐶𝐶𝐶𝑝𝑝 = 𝐾𝐾𝑠𝑠𝑠𝑠 � 𝐼𝐼𝑁𝑁 − 𝐾𝐾1 � 𝐼𝐼1 + 𝐾𝐾2 � 𝐼𝐼2

Ungrounded banks

Self-tuning and Auto-setting equation

Page 7: Enhanced Fault Location Method for Shunt Capacitor Banks

• For fuseless SCBs:

𝐾𝐾𝑠𝑠𝑠𝑠 = �+1−1

𝐿𝐿𝐿𝐿𝐴𝐴𝐿𝐿 𝑆𝑆𝐿𝐿𝑆𝑆𝐿𝐿𝑆𝑆𝐶𝐶𝑆𝑆 𝐸𝐸𝐸𝐸𝐸𝐸𝑙𝑙𝐸𝐸𝐸𝐸𝐿𝐿𝑆𝑆𝐶𝐶𝑆𝑆𝑅𝑅𝑆𝑆𝑠𝑠𝑅𝐿𝐿 𝑆𝑆𝐿𝐿𝑆𝑆𝐿𝐿𝑆𝑆𝐶𝐶𝑆𝑆 𝐸𝐸𝐸𝐸𝐸𝐸𝑙𝑙𝐸𝐸𝐸𝐸𝐿𝐿𝑆𝑆𝐶𝐶𝑆𝑆

• For internally fused SCBs:

𝐾𝐾𝑠𝑠𝑠𝑠 = �−1+1

𝐿𝐿𝐿𝐿𝐴𝐴𝐿𝐿 𝑆𝑆𝐿𝐿𝑆𝑆𝐿𝐿𝑆𝑆𝐶𝐶𝑆𝑆 𝐸𝐸𝐸𝐸𝐸𝐸𝑙𝑙𝐸𝐸𝐸𝐸𝐿𝐿𝑆𝑆𝐶𝐶𝑆𝑆𝑅𝑅𝑆𝑆𝑠𝑠𝑅𝐿𝐿 𝑆𝑆𝐿𝐿𝑆𝑆𝐿𝐿𝑆𝑆𝐶𝐶𝑆𝑆 𝐸𝐸𝐸𝐸𝐸𝐸𝑙𝑙𝐸𝐸𝐸𝐸𝐿𝐿𝑆𝑆𝐶𝐶𝑆𝑆

Ungrounded banks-bank types

• Separate left section and right section settings for banks with different number of elements/strings in left and right sections

𝑑𝑑𝐼𝐼𝑁𝑁𝑑𝑑𝑋𝑋𝐴𝐴

𝑙𝑙 = −𝑋𝑋𝐴𝐴𝑟𝑟

𝑋𝑋𝐴𝐴𝑙𝑙 + 𝑋𝑋𝐴𝐴

𝑟𝑟 2 � 𝐼𝐼𝐴𝐴; 𝑑𝑑𝐼𝐼𝑁𝑁𝑑𝑑𝑋𝑋𝐴𝐴

𝑟𝑟 = 𝑋𝑋𝐴𝐴𝑙𝑙

𝑋𝑋𝐴𝐴𝑙𝑙 + 𝑋𝑋𝐴𝐴

𝑟𝑟 2 � 𝐼𝐼𝐴𝐴

Page 8: Enhanced Fault Location Method for Shunt Capacitor Banks

• Suppose the left and right section rated reactance values are related as 𝑋𝑋𝑟𝑟 = 𝐾𝐾𝑥𝑥 � 𝑋𝑋𝑙𝑙, then we have:

∆𝐼𝐼𝑁𝑁(𝑝𝑝𝑝𝑝) =∆𝑋𝑋𝐴𝐴𝑙𝑙 (𝑝𝑝𝑝𝑝) �

𝐾𝐾𝑥𝑥𝐾𝐾𝑥𝑥 + 1 2

∆𝑋𝑋𝐴𝐴𝑟𝑟(𝑝𝑝𝑝𝑝) �𝐾𝐾𝑥𝑥

𝐾𝐾𝑥𝑥 + 1 2

𝐿𝐿𝐿𝐿𝐿𝐿𝐿𝐿 𝑆𝑆𝐿𝐿𝑆𝑆𝐿𝐿𝑆𝑆𝑜𝑜𝑆𝑆 𝑆𝑆𝐿𝐿𝐿𝐿𝐿𝐿𝑆𝑆𝑆𝑆𝑆𝑆𝑅𝑅𝑆𝑆𝑆𝑆𝑅𝐿𝐿 𝑆𝑆𝐿𝐿𝑆𝑆𝐿𝐿𝑆𝑆𝑜𝑜𝑆𝑆 𝐸𝐸𝐸𝐸𝐸𝐸𝐸𝐸𝑝𝑝𝐸𝐸𝐿𝐿𝑆𝑆𝑜𝑜𝑆𝑆

• Expected change in the neutral current for a single element failure can be used as a base to estimate number of failed elements

Ungrounded banks - sensitivity

Page 9: Enhanced Fault Location Method for Shunt Capacitor Banks

• DOUBLE WYE GROUNDED BANKS

Grounded banks

Page 10: Enhanced Fault Location Method for Shunt Capacitor Banks

• Neutral current would be through window CT measuring vectorial difference

• Zero sequence current coefficient is sum of the phase k-factors (likely to be close to zero)

𝐾𝐾𝑝𝑝 = 𝑋𝑋𝑝𝑝𝑟𝑟− 𝑋𝑋𝑝𝑝𝑙𝑙

𝑋𝑋𝑝𝑝𝑙𝑙 + 𝑋𝑋𝑝𝑝𝑟𝑟; 𝑝𝑝 ∶ 𝐴𝐴,𝐵𝐵 𝑜𝑜𝑜𝑜 𝐶𝐶

• The zero sequence current impact could be neglected:𝐼𝐼𝑁𝑁 = 𝐾𝐾1 � 𝐼𝐼1 + 𝐾𝐾2 � 𝐼𝐼2

• Detection of number of failed elements:

∆𝐼𝐼𝑁𝑁 𝑝𝑝𝑝𝑝 =∆𝑋𝑋2

(𝑝𝑝𝑝𝑝)

Grounded banks

Page 11: Enhanced Fault Location Method for Shunt Capacitor Banks

The enhanced method flowchart

Blockk-factor’s Update

Report Fault ed Phase and Sect ion

Report Number of Fai led Element s

Re-calculate the k-factors

Phase Angle Evaluation

Count ing Scheme(Pickup Delay)

Calculat ion of

Magnitude Thresholds

Unbalance Protection

Inputs

IN Comp

Page 12: Enhanced Fault Location Method for Shunt Capacitor Banks

• Bank rated current to obtain per-unit the compensated current

• Capacitor element/unit rated capacitance

• Number of parallel and series capacitor elements in each unit and also capacitor units in the bank, both left and right sections

• Whether the bank is Internally fused or fuseless

• Grounded or ungrounded bank

• Failed elements count and count reset

Required data for application setting

Page 13: Enhanced Fault Location Method for Shunt Capacitor Banks

Simulation Model230 KV 50 km 50 km

SCB

Feeder

S=2

P=2

...

...

...

P=1

N=15

Su=5

Ce=1µF

Cu

S=12

Pst=5

...

Pst=4

N=1

Su=6Cu

Ce=36µF

.........

...

...

.........

...

...

Internally Fused

Fuseless

Page 14: Enhanced Fault Location Method for Shunt Capacitor Banks

• Unbalance load

• Pre-existing inherent unbalance

• Harmonics

• Measurement noise

• Impact of temperature (could be shading) or aging

PSCAD and Relay modelsThe PSCAD model has considered:

• Anti-aliasing filter

• Decaying DC removal

• Full cycle DFT

The Relay model applies:

Page 15: Enhanced Fault Location Method for Shunt Capacitor Banks

Decision Making

Time Axis

Angle Zone

Magnitude Threshold

Element(s) FailureLocation determined k-factor gets updated

Counting Scheme Angle

Mag.

I NCom

pI p

hase

%IN

Comp

Ir

Page 16: Enhanced Fault Location Method for Shunt Capacitor Banks

• Detection of failures in different locations [Ungrounded Bank]

Failures in the order of occurrence: A-Left , A-Left , B-Right , C-Right

Enhanced Method Evaluation

0.2 0.25 0.3 0.35 0.4-180

0

180

Ang

le (D

eg.)

Phase A

0

0.2

0.4

0.6

% M

agni

tude

Left Section Right Section

0.2 0.25 0.3 0.35 0.4-180

0

180

Ang

le (D

eg.)

Phase B

0

0.2

0.4

0.6

% M

agni

tude

0.2 0.25 0.3 0.35 0.4-180

0

180

Ang

le (D

eg.)

Phase C

Time (s)

0

0.2

0.4

0.6

% M

agni

tude

Satisfies Magnitude Criteria

Satisfies Angle Criteria

Page 17: Enhanced Fault Location Method for Shunt Capacitor Banks

Consecutive failures detection

0.2 0.25 0.3 0.35 0.4-180

0

180

Ang

le (D

eg.)

Phase A

0

0.2

0.4

0.6

% M

agni

tude

Left Section Right Section

0.2 0.25 0.3 0.35 0.4-180

0

180

Ang

le (D

eg.)

Phase B

0

0.2

0.4

0.6

% M

agni

tude

0.2 0.25 0.3 0.35 0.4-180

0

180

Ang

le (D

eg.)

Phase C

Time (s)

0

0.2

0.4

0.6

% M

agni

tude

K-factors self-tuning and compensated current reset

Page 18: Enhanced Fault Location Method for Shunt Capacitor Banks

Number of failed elements detection

0.2 0.25 0.3 0.35 0.4-180

0

180

Ang

le (D

eg.)

Phase A

0

0.2

0.4

0.6

% M

agni

tude

Left Section Right Section

0.2 0.25 0.3 0.35 0.4-180

0

180

Ang

le (D

eg.)

Phase B

0

0.2

0.4

0.6

% M

agni

tude

0.2 0.25 0.3 0.35 0.4-180

0

180

Ang

le (D

eg.)

Phase C

Time (s)

0

0.2

0.4

0.6

% M

agni

tude

Note the magnitude because of double element failure

Page 19: Enhanced Fault Location Method for Shunt Capacitor Banks

• Failures in the order of occurrence: B-Left , B-Right , C-Left , C-Right

• Right and left section failures in the same phase could seem as a balanced bank to the relay

• Each of them is detected, reported, and self-tuning helps to find the subsequent failures

Detection of ambiguous failures

0.2 0.25 0.3 0.35 0.4 0.45-180

0

180

Angl

e (D

eg.)

Phase A

0

1.4

2.8

4.2

% M

agni

tude

Left Section Right Section

0.2 0.25 0.3 0.35 0.4 0.45-180

0

180

Angl

e (D

eg.)

Phase B

0

1.4

2.8

4.2

% M

agni

tude

0.2 0.25 0.3 0.35 0.4 0.45-180

0

180

Angl

e (D

eg.)

Phase C

Time (s)

0

1.4

2.8

4.2

% M

agni

tude

Page 20: Enhanced Fault Location Method for Shunt Capacitor Banks

• Comparing the ambiguous failure case with commercial relay unbalance protection : B-Left , B-Right , C-Left , C-Right

Detection of ambiguous failure (cont’d)

0.2 0.3 0.401234

Num

ber

Phase A Left Section

0.2 0.3 0.401234

Num

ber

Phase B Left Section

0.2 0.3 0.401234

Num

ber

Time(s)

Phase C Left Section

0.2 0.3 0.401234

Num

ber

Phase A Right Section

0.2 0.3 0.401234

Num

ber

Phase B Right Section

0.2 0.3 0.401234

Phase C Right Section

Time(s)

Num

ber

• 1 and 3: STG 1 picked up, faulted phase unknown

• 2 and 4: Ambiguous failure not detected, operating quantity reset

• All of the 4 failures are detected and reported accordingly

Page 21: Enhanced Fault Location Method for Shunt Capacitor Banks

Tolerance to external disturbances

0.2 0.25 0.3 0.35 0.4 0.45 0.5-180

0

180

Ang

le (D

eg.)

Phase A

0

0.15

0.3

0.45

% M

agni

tude

Left Section Right Section

0.2 0.25 0.3 0.35 0.4 0.45 0.5-180

0

180

Ang

le (D

eg.)

Phase B

0

0.15

0.3

0.45

% M

agni

tude

0.2 0.25 0.3 0.35 0.4 0.45 0.5-180

0

180

Ang

le (D

eg.)

Phase C

Time (s)

0

0.15

0.3

0.45

% M

agni

tude

AG ground fault (SCB Bus)1

A-Right Section (1 cap. fail)2

AG Fault cleared3

C-Left Section (2 cap. fail)4Phase C open pole5

Phase C reclosed6

Page 22: Enhanced Fault Location Method for Shunt Capacitor Banks

• Self-tuning with a regular and pre-determined rate

• Could be set based on the expected rate of change of capacitance for a worst case temperature change, say an hourly update rate for the k-factors to compensate for gradual changes

• Should be blocked for sometime to avoid interference with detecting the faults when an internal failure is suspected

Compensation of gradual changes

Illustrative scenario with a linear change in capacitance:

0.2 0.22 0.24 0.26 0.28 0.3 0.32-180

0

180

0

0.2

0.4

0.6

% M

agni

tude

Compensated current

K factor update and compensated current reset

Page 23: Enhanced Fault Location Method for Shunt Capacitor Banks

• Enhanced fault location method for Internally fused and fuseless double wye capacitor banks is presented to expedite the repair process

• Enhanced fault location method applies self-tuning and auto-setting that result in: Detecting consecutive fa ilures Detecting ambiguous fa ilures Compensating for gradual capacitance changes Compensating for errors due to the CTs by initia l setting

(commissioning process)

• Enhanced fault location method allows discriminating capacitor elements fa ilures per each phase in left or right section of the double-wye bank even when sections have different capacitance.

Conclusions

Page 24: Enhanced Fault Location Method for Shunt Capacitor Banks

• Both compensated neutral current magnitude and angle areused to detect capacitor element failures, making methodrobust even during external disturbances simultaneously withinternal failures.

• Method is immune to external disturbances, noise, bankinherent unbalance, CTinaccuracies.

• Real time report of number of failed elements and locationenables quick response for repair

Conclusions

Page 25: Enhanced Fault Location Method for Shunt Capacitor Banks

Thank You

Questions?