fmmt497
TRANSCRIPT
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Issue 4 - November 2006 1 www.zetex.com© Zetex Semiconductors plc 2006
FMMT497
SOT23 NPN silicon planar high voltage highperformance transistor
Complementary part number - FMMT597
Device marking - 497
Absolute maximum ratings
Parameter Symbol Value Unit
Collector-base voltage VCBO 300 V
Collector-emitter voltage VCEO 300 V
Emitter-base voltage VEBO 5 V
Continuous collector current IC 500 mA
Peak pulse current ICM 1 A
Base current IB 200 mA
Power dissipation at Tamb=25°C Ptot 500 mW
Operating and storage temperature range Tj:Tstg -55 to +150 °C
C
E
B
C
E
B
Pinout - top view
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Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max.
Unit Conditions
Collector-base
breakdown voltage
V(BR)CBO 300 V IC = 100A
Collector-emitter
breakdown voltage
VCEO(sus) 300 V IC = 10mA (*)
NOTES:(*) Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%.
Emitter-base
breakdown voltage
V(BR)EBO 5 V IE = 100A
Collector cut-off current ICBO 100 nA VCB = 250V
Collector cut-off current ICES 100 nA VCES = 250V
Emitter cut-off current IEBO 100 nA VEB = 4V
Collector-emitter
saturation voltage
VCE(sat) 0.2
0.3
V
V
IC = 100mA, IB = 10mA
IC = 250mA, IB = 25mA
Base-emitter
saturation voltage
VBE(sat) 1.0 V IC = 250mA, IB = 25mA
Base-emitter
turn on voltage
VBE(on) 1.0 V IC = 250mA, VCE = 10V
Static forward current
transfer ratio
hFE 100
80
20
300
IC = 1mA, VCE = 10V
IC
= 100mA, VCE
= 10V(*)
IC = 250mA, VCE = 10V(*)
Transition frequency f T 75 MHz IC = 50mA, VCE = 10V
f = 100MHz
output capacitance Cobo 5 pF VCB = 10V, f = 1MHz
Switching performance td 53 ns VCC = 100V, IC = 100mA,
Ib1 = -Ib2 = 10mAtr 126 ns
ts 2.58 s
tf 228 ns
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Typical characteristics
V C E ( s a t ) - ( V )
1A10mA 100mA1mA
-55 °C+25 °C
+100 °C
IC /IB=10
VCE(sat) v IC
IC-Collector Current
IC-Collector Current
VBE(sat) v IC
V
B E ( s a t ) - ( V )
0
0.2
100mA10mA
0.4
0.6
0.8
1A
hFE V IC
IC-Collector Current
1mA 100mA10mA 1A
h F E
- T y p i c a l G a i n
100
0
300
200
400
10mA
1mA
IC-Collector Current
VBE(on) v IC
100mA 1A
V B E ( o n ) - ( V )
0
IC-Collector Current
VCE(sat) v IC
V C E ( s a t ) - ( V )
1mA
0
0.1
100mA10mA
+25 ° C
0.2
0.3
0.4IC /IB=10
1A
+100 °C
-55 °C
+25 °C
+100 °C
-55 °C
+25 °C
-55 °C
+25 °C+100 °C
IC /IB=10VCE=10V
VCE=10V
I C - C o l l e c t o r C u r r e n t ( A )
1
0.1
Safe Operating Area
VCE - Collector Emitter Voltage (V)
0.1 10 100
1sDC
100ms10ms
100µs1ms
1
0
1mA
0.01
IC /IB=50
0.5
0.6
0.1
0.2
0.3
0.4
0.5
0.6
0.9
0.2
0.4
0.6
0.8
0.9
10000.001
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Package outline - SOT23
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Dim. Millimeters Inches Dim. Millimeters Inches
Min. Max. Min. Max. Min. Max. Max. Max.
A - 1.12 - 0.044 e1 1.90 NOM 0.075 NOM
A1 0.01 0.10 0.0004 0.004 E 2.10 2.64 0.083 0.104b 0.30 0.50 0.012 0.020 E1 1.20 1.40 0.047 0.055
C 0.085 0.120 0.003 0.008 L 0.25 0.62 0.018 0.024
D 2.80 3.04 0.110 0.120 L1 0.45 0.62 0.018 0.024
e 0.95 NOM 0.0375 NOM - - - - -
E
e
L
e1
D
A
c
E1L1
A1
b
3 leads
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