h20r1202

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IHW20N120R2Soft Switching Series

Power Semiconductors 1 Rev. 1.2 July 06

Reverse Conducting IGBT with monolithic body diode

Features:

• Powerful monolithic Body Diode with very low forward voltage

• Body diode clamps negative voltages• TrenchStop and Fieldstop technology for 1200 V applications

offers :- very tight parameter distribution- high ruggedness, temperature stable behavior

• NPT technology offers easy parallel switching capability due topositive temperature coefficient in VCE(sat)

• Low EMI

• Qualified according to JEDEC1 for target applications

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Applications:• Inductive Cooking

• Soft Switching Applications

Type V CE I C V CE(sat ),Tj=25°C T j,max Marking Package

IHW20N120R2 1200V 20A 1.55V 175°C H20R1202 PG-TO-247-3-21

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage V C E 1200 V

DC collector current

T C = 25°CT C = 100°C

I C

4020

Pulsed collector current, t p limited by T jmax I Cp u l s 60

Turn off safe operating area (V CE ≤ 1200V, T j ≤ 175°C) - 60

Diode forward current

T C = 25°C

T C = 100°C

I F

40

20

Diode pulsed current, t p limited by T jmax I F p u l s 30

Diode surge non repetitive current, t p limited by T jmax

T C = 25°C, t p = 10ms, sine halfwave

T C = 25°C, t p ≤ 2.5µs, sine halfwaveT C = 100°C, t p ≤ 2.5µs, sine halfwave

I F SM

50

130120

A

Gate-emitter voltage

Transient Gate-emitter voltage (t p < 5 ms)

V G E ±20

±25

V

Power dissipation T C = 25°C P t o t 330 W

Operating junction temperature T j -40...+175

Storage temperature T s t g -55...+175

Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

°C

1 J-STD-020 and JESD-022

G

C

E

PG-TO-247-3-21

®

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Thermal Resistance

Parameter Symbol Conditions Max. Value Unit

Characteristic

IGBT thermal resistance,

junction – case

R t h J C 0.45

Diode thermal resistance,

junction – case

R t h J CD 0.45

Thermal resistance,

junction – ambient

R t h J A 40

K/W

Electrical Characteristic, at T j = 25 °C, unless otherwise specified

ValueParameter Symbol Conditions

min. Typ. max.Unit

Static Characteristic

Collector-emitter breakdown voltage V ( BR) CES V G E=0V, I C=500µ A 1200 - -

Collector-emitter saturation voltage V CE( s a t ) V G E = 15V, I C=20A

T j=25°C

T j=125°C

T j=175°C

-

-

-

1.55

1.75

1.85

1.75

-

-

Diode forward voltage V F V G E=0V, I F=20A

T j=25°C

T j=125°C

T j=175°C

-

-

-

1.45

1.6

1.65

1.7

-

-

Gate-emitter threshold voltage V G E( t h ) I C=0.5mA,V C E=V G E

5.1 5.8 6.4

V

Zero gate voltage collector current I CE S V C E=1200V,

V G E=0V

T j=25°C

T j=175°C

-

-

-

-

5

2500

µA

Gate-emitter leakage current I G E S V C E=0V,V G E=20V - - 100 nA

Transconductance g f s V C E=20V, I C=20A - 14.5 - SIntegrated gate resistor R G in t none

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Dynamic Characteristic

Input capacitance C i s s - 1887 -

Output capacitance C os s - 59 -Reverse transfer capacitance C r s s

V C E=25V,

V G E=0V, f =1MHz - 47 -

pF

Gate charge QG a t e V C C=960V, I C=20A

V G E=15V

- 143 - nC

Internal emitter inductance

measured 5mm (0.197 in.) from case

LE - 13 - nH

Switching Characteristic, Inductive Load, at T j=25 °C


min. typ. Max.

Unit

IGBT Characteristic

Turn-off delay time t d ( o f f ) - 359 -

Fall time t f - 53 -

Turn-on energy E o n - - -

Turn-off energy E o f f - 1.2 -

ns

Total switching energy E t s

T j=25°C, V C C=600V, I C=20AV G E=0 /15V,

R G=15Ω,

Lσ

2 )=180nH,

C σ 2)

=39pF - 1.2 - mJ

Switching Characteristic, Inductive Load, at T j=175 °C


min. Typ. Max.Unit

IGBT Characteristic

Turn-off delay time t d ( o f f ) - 427 -

Fall time t f - 99 -

Turn-on energy E o n - - -

Turn-off energy E o f f - 2.0 -

ns

Total switching energy E t s

T j=175°C V C C=600V, I C=20A,V G E= 0 /15V,

R G= 15Ω ,

Lσ =180nH

2 ),

C σ =39pF2 )

- 2.0 - mJ

2) Leakage inductance L

σ and Stray capacity C σ due to dynamic test circuit in Figure E.

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I C ,

C O L L E C T O R C U R R E N T

10Hz 100Hz 1kHz 10kHz 100kHz

0A

20A

40A

60A

T C=110°C

T C=80°C

I C ,


1V 10V 100V 1000V

1A

10A

DC

10µs

t p=1µs

20µs

500µs

5ms

50µs

f , SWITCHING FREQUENCY V CE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function ofswitching frequency for hardswitching (turn-off)

(T j ≤ 175°C, D = 0.5, V CE = 600V,

V GE = 0/+15V, R G = 15Ω)

Figure 2. IGBT Safe operating area

(D = 0, T C = 25°C,

T j ≤175°C;V GE=15V)

P t o t ,

D I S S I P A T E D P O W E R

25°C 50°C 75°C 100°C 125°C 150°C0W

50W

100W

150W

200W

250W

300W

I C ,


25°C 50°C 75°C 100°C 125°C 150°C

0A

10A

20A

30A

40A

T C, CASE TEMPERATURE T C, CASE TEMPERATURE

Figure 3. Power dissipation as a function of

case temperature(T j ≤ 175°C)

Figure 4. DC Collector current as a function

of case temperature(V GE ≥ 15V, T j ≤ 175°C)

I c

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I C ,


0V 1V 2V

0A

10A

20A

30A

40A

50A

15V

7V

9V

11V

13V

V GE

=20V

I C ,


0V 1V 2V 3V

0A

10A

20A

30A

40A

50A

15V

7V

9V

11V

13V

V GE

=20V

V CE, COLLECTOR-EMITTER VOLTAGE V CE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic(T j = 25°C)

Figure 6. Typical output characteristic(T j = 175°C)

I C

, C O L L E C T O R C U R R E N T

0V 2V 4V 6V 8V 10V0A

10A

20A

30A

40A

50A

25°C

T J=175°C

V C E ( s a

t ) , C O L L E

C T O R - E M I T T S A T U R A T I O N V O L T A G E

0°C 50°C 100°C 150°C0.0V

0.5V

1.0V

1.5V

2.0V

2.5V

I C =20A

I C =40A

I C =10A

V GE, GATE-EMITTER VOLTAGE T J, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristic(VCE=20V)

Figure 8. Typical collector-emitter saturationvoltage as a function of junctiontemperature(V GE =15V)

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t , S W I T C H I N G T I M E S

0A 10A 20A 30A

100ns

1000ns

t f

t d(off)

t , S W I T C H I N G T I M E S

10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω

100ns

1000ns

t f

t d(off)

I C , COLLECTOR CURRENT R G, GATE RESISTOR

Figure 9. Typical switching times as afunction of collector current(inductive load, T J=175°C,V CE=600V, VGE=0/15V, R G=15Ω,Dynamic test circuit in Figure E)

Figure 10. Typical switching times as afunction of gate resistor(inductive load, T J=175°C, V CE=600V,VGE=0/15V, I C=20A,Dynamic test circuit in Figure E)

t , S

W I T C H I N G T I M E S

25°C 50°C 75°C 100°C 125°C 150°C10ns

100ns t f

t d(off)

V G E ( t h ) ,

G A T E - E M I T T T R S H O L D V O L T A G E

-50°C 0°C 50°C 100°C2V

3V

4V

5V

6V

max.

typ.

min.

T J, JUNCTION TEMPERATURE T J, JUNCTION TEMPERATURE

Figure 11. Typical switching times as afunction of junction temperature(inductive load, V CE=600V,VGE=0/15V, I C=20A, R G=29Ω,

Dynamic test circuit in Figure E)

Figure 12. Gate-emitter threshold voltage as afunction of junction temperature (I C = 0.5mA)

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E ,

S W I T C H I N G E N E R G Y L O S S E S

0A 10A 20A 30A0.0mJ

1.0mJ

2.0mJ

3.0mJ

E off

E ,

S W I T C H I N G E N E R G Y L O S S E S

20Ω 30Ω 40Ω 50Ω 60Ω 70Ω 80Ω

0.0mJ

1.0mJ

2.0mJ

E off

I C , COLLECTOR CURRENT R G, GATE RESISTOR

Figure 13. Typical turn-off energy as afunction of collector current(inductive load, T J=175°C,V CE=600V, VGE=0/15V, R G=15Ω,Dynamic test circuit in Figure E)

Figure 14. Typical turn-off energy as afunction of gate resistor(inductive load, T J=175°C, V CE=600V,VGE=0/15V, I C=20A,Dynamic test circuit in Figure E)

E , S W

I T C H I N G E N E R G Y L O S S E S

25°C 50°C 75°C 100°C 125°C 150°C

0.0mJ

0.5mJ

1.0mJ

1.5mJ

2.0mJ

E off

E , S W

I T C H I N G E N E R G Y L O S S E S

600V 700V0.0mJ

0.5mJ

1.0mJ

1.5mJ

E off

T J, JUNCTION TEMPERATURE V CE , COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical turn-off energy as afunction of junction temperature(inductive load, V CE=600V,VGE=0/15V, I C=20A, R G=15Ω,Dynamic test circuit in Figure E)

Figure 16. Typical turn-off energy as afunction of collector emittervoltage(inductive load, T J=175°C,VGE=0/15V, I C=20A, R G=15Ω,

Dynamic test circuit in Figure E)

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V G E ,

G A T E - E M I T T E R V O L T A G E

0nC 50nC 100nC 150nC0V

5V

10V 960V

240V

c ,

C A P A C I T A N C E

0V 10V 20V10pF

100pF

1nF

C rss

C oss

C iss

QGE, GATE CHARGE V CE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge(I C=20 A)

Figure 18. Typical capacitance as a functionof collector-emitter voltage(V GE=0V, f = 1 MHz)

Z t h J C ,

T R A N S

I E N T T H E R M A L R E S I S T A N C E

10µs 100µs 1ms 10ms 100ms0

-3K/W

0-2K/W

0-1K/W

single pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

Z t h J C ,

T R A N S

I E N T T H E R M A L R E S I S T A N C E

10µs 100µs 1ms 10ms 100ms

10-2K/W

10-1K/W

single pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

t P, PULSE WIDTH t P, PULSE WIDTH

Figure 19. IGBT transient thermalresistance(D = t p / T )

Figure 20. Diode transient thermalimpedance as a function of pulse width(D=t P/T )

R , ( K / W ) τ , ( s )

0.0788 1.04*10-1

0.183 1.52*10-2

0.162 9.51*10-4

0.0505 4.95*10-5

C 1=τ 1 /R 1

R 1 R 2

C 2=τ 2 /R 2

R , ( K / W ) τ , ( s )

0.0578 1.16*10-1

0.1699 1.88*10-2

0.1392 2.03*10-3

0.087 2.38*10-4

C 1=τ 1 /R 1

R 1 R 2

C 2=τ 2 /R 2

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I F ,

F O R W A R D C U R R E N T

0.0V 0.5V 1.0V 1.5V 2.0V0A

5A

10A

15A

0A

5A

0A

5A

175°C

T J =25°C

V F ,

F O R W A R D V O L T A G E

0°C 50°C 100°C 150°C0.0V

0.5V

1.0V

1.5V

2.0V

20A

10A

I F =40A

V F, FORWARD VOLTAGE T J, JUNCTION TEMPERATURE

Figure 21. Typical diode forward current asa function of forward voltage

Figure 22. Typical diode forward voltageas a function of junction temperature

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Please refer to mounting instructions for assembly.

PG-TO247-3-21

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Figure A. Definition of switching times

Figure B. Definition of switching losses

I r r m

90% I r r m

10% I r r m

di /dt F

t r r

I F

i,v

t QS

QF

t S

t F

V R

di /dt r r

Q =Q Qr r S F

+

t =t t r r S F

+

Figure C. Definition of diodes

switching characteristics

p(t)1 2 n

T (t) j

τ1

1

τ2

2

n

n

τ

TC

r r

r

r

r r

Figure D. Thermal equivalentcircuit

Figure E. Dynamic test circuit

Leakage inductance Lσ and Stray

capacity C σ

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Power Semiconductors 12 Rev 1 2 July 06

Edition 2006-01

Published byInfineon Technologies AG81726 München, Germany

© Infineon Technologies AG 11/2/06.All Rights Reserved.

Attention please!

The information given in this data sheet shall in no event be regarded as a guarantee of conditions orcharacteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typicalvalues stated herein and/or any information regarding the application of the device, Infineon Technologieshereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties ofnon-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearestInfineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the typesin question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the expresswritten approval of Infineon Technologies, if a failure of such components can reasonably be expected tocause the failure of that life-support device or system, or to affect the safety or effectiveness of that device orsystem. Life support devices or systems are intended to be implanted in the human body, or to supportand/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the healthof the user or other persons may be endangered.

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