heavy ion see testing of m65609e sram memory from atmel

TRAD, Tests & Radiations ESA/CNES March 10 2015

Heavy Ion SEE Testing of M65609E SRAM

memory from Atmel

Presented by Pierre GARCIA

Work performed by Lionel GOUYET , Benjamin VANDEVELDE , Alexandre ROUSSET, Athina VAROTSOU

TRAD, Tests & Radiations 2 ESA/CNES March 10 2015

Outline

The project Parts, beam description, test system Results

Conclusions


55 01010101

51 01010001

Read Data Expected Data

SEU (1 error in the read data)

55 01010101

71 01110001

MBU (more than 1 error in the read data)

Error correction

More critical

Context MBU or not MBU? That is the question.


Part tested – M65609E – Atmel

Part of the tested lot Delidded part Die marking

PART IDENTIFICATION Type : M65609E Manufacturer : Atmel Function : Rad. Hard. 128k x 8, 3.3-Volt SRAM

PARTS PROCUREMENT INFORMATIONS Packaging : FP-32 Sample size: 10 irradiated samples


IRRADIATION BEAM CHARACTERISTICS

Heavy Ions used : High LET cocktail : Xe High range cocktail : Kr, Ni, Ar, Ne and C

Flux : 465 cm-2.s-1 up to 7600 cm-2.s-1

Irradiation facility: U.C.L.

Irradiation facility: P.S.I. IRRADIATION BEAM CHARACTERISTICS

Proton Energy : 230 MeV, 200 MeV, 151 MeV, 101 MeV and 75 MeV

Flux : 4,46 106 cm-2.s-1 up to 3.14 107cm-2.s-1

SEE irradiation Facilities

Flux set for High LET ions


Same Test bench for proton and Heavy ions irradiation

Proton irradiation: No active part in the beam field

Heavy ions irradiation: DUT the closest possible control

board

Test Bench - Hardware


Event classification: Transient (error type 1)

Upset (error type 2 or 3)

Stuck bit (error type 4) Difference between SEU and MBU

Test Bench - Detection method


MBU: One or multiple particles shots in the same data ?

55 01010101

51 01010001

Read Data Expected Data

SEU (1 error in the read data)

55 01010101

71 01110001

MBU (more than 1 error in the read data)

Real MBU Multiple SEU

For the test bench:

In reality:

To estimate real MBU: Flux or mapping

Results - Post treatment


Bit cell of word 1

Bit cell of word 2

Divide a word in several physical area: Example of a interleaved of 2 bytes on a memory:



A Post treatment has been performed on the Heavy ions and Protons results

with the physical distribution of memory cells from Atmel

Real MBU

Divide a word in several physical area:

0101 0011 Bits are adjacent

Multiple SEU

0001 1101 Bits are not adjacent

Bit cell of word 1

Bit cell of word 2

SEU



LET 67.7MeV.cm2.mg-1 Heavy ion beam.

Representation of events on the memory plan:



MBU Cross Section for M65609E

1.00E-07

1.00E-06

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-01

0 10 20 30 40 50 60 70 80

LET (MeV.cm².mg-1)

Cro

ss S

ectio

n (c

m²)

Part 70 Part 74



M65609E - MBU cross section

1.00E-12

1.00E-11

1.00E-10

1.00E-09

1.00E-08

0 50 100 150 200 250

Energy (MeV)

Cro

ss S

ectio

n (C

m²)

Part 79Part 78



SEU Cross Section for M65609E

1.00E-08

1.00E-07

1.00E-06

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-01

1.00E+00

0 10 20 30 40 50 60 70 80

LET (MeV.cm².mg-1)

Cro

ss S

ectio

n (c

m²)

Part 70 Part 74



M65609E - SEU cross section

1.00E-10

1.00E-09

1.00E-08

1.00E-07

1.00E-06

0 50 100 150 200 250

Energy (MeV)

Cro

ss S

ectio

n (C

m²)

Part 79Part 78Part 72Part 71



Conclusion

Post treatment has been performed

Real MBU observed with Heavy ions and Protons

Results available in “Single Event Upsets and Multiple Bit Upsets observed on 1Mbit SRAM”

Marc Poizat, Christian Poivey, Alexandre Rousset, Benjamin Vandevelde, Lionel Gouyet, Athina Varotsou


Thank you for your attention

Any question ?


Test Bench - Hardware

Hardware designed around an FPGA witch communicate

with a Labview software

Signals buffered and multiplexed depending the

tested Unit Under Test (UUT)

DUT can be remote with cables or plugged as close

as possible

heavy ion see testing of m65609e sram memory from atmel

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