high speed igbt in trench and fieldstop technology
TRANSCRIPT
IGBTHighspeedIGBTinTrenchandFieldstoptechnology
IGW50N60H3600Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
2
IGW50N60H3Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-12
HighspeedIGBTinTrenchandFieldstoptechnologyFeatures:
TRENCHSTOPTMtechnologyoffering•verylowVCEsat•lowEMI•Verysoft,fastrecoveryanti-paralleldiode•maximumjunctiontemperature175°C•qualifiedaccordingtoJEDECfortargetapplications•Pb-freeleadplating;RoHScompliant•completeproductspectrumandPSpiceModels:http://www.infineon.com/igbt/
Applications:
•uninterruptiblepowersupplies•weldingconverters•converterswithhighswitchingfrequency
G
C
E
GC
E
KeyPerformanceandPackageParametersType VCE IC VCEsat,Tvj=25°C Tvjmax Marking PackageIGW50N60H3 600V 50A 1.85V 175°C G50H603 PG-TO247-3
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IGW50N60H3Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-12
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
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IGW50N60H3Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-12
Maximumratings
Parameter Symbol Value UnitCollector-emittervoltage,Tvj≥25°C VCE 600 V
DCcollectorcurrent,limitedbyTvjmaxTC=25°CTC=100°C
IC 100.050.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 200.0 A
Turn off safe operating areaVCE≤600V,Tvj≤175°C,tp=1µs - 200.0 A
Gate-emitter voltage VGE ±20 V
Short circuit withstand timeVGE=15.0V,VCC≤400VAllowed number of short circuits < 1000Time between short circuits: ≥ 1.0sTvj=150°C
tSC
5
µs
PowerdissipationTC=25°CPowerdissipationTC=100°C Ptot
333.0167.0 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,wave soldering 1.6 mm (0.063 in.) from case for 10s 260 °C
Mounting torque, M3 screwMaximum of mounting processes: 3 M 0.6 Nm
ThermalResistance
Parameter Symbol Conditions Max.Value UnitCharacteristic
IGBT thermal resistance,junction - case Rth(j-c) 0.45 K/W
Thermal resistancejunction - ambient Rth(j-a) 40 K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Valuemin. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=2.00mA 600 - - V
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=50.0ATvj=25°CTvj=125°CTvj=175°C
---
1.852.102.25
2.30--
V
Gate-emitter threshold voltage VGE(th) IC=0.80mA,VCE=VGE 4.1 5.1 5.7 V
Zero gate voltage collector current ICESVCE=600V,VGE=0VTvj=25°CTvj=175°C
--
--
40.03500.0
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=50.0A - 30.0 - S
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IGW50N60H3Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-12
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Valuemin. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance Cies - 2960 -
Output capacitance Coes - 116 -
Reverse transfer capacitance Cres - 96 -
VCE=25V,VGE=0V,f=1MHz pF
Gate charge QGVCC=480V,IC=50.0A,VGE=15V - 315.0 - nC
Internal emitter inductancemeasured 5mm (0.197 in.) fromcase
LE - 13.0 - nH
Short circuit collector currentMax. 1000 short circuitsTime between short circuits: ≥ 1.0s
IC(SC)VGE=15.0V,VCC≤400V,tSC≤5µsTvj=150°C
-330
- A
SwitchingCharacteristic,InductiveLoad
Valuemin. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=25°CTurn-on delay time td(on) - 23 - ns
Rise time tr - 37 - ns
Turn-off delay time td(off) - 235 - ns
Fall time tf - 24 - ns
Turn-on energy Eon - 1.45 - mJ
Turn-off energy Eoff - 0.91 - mJ
Total switching energy Ets - 2.36 - mJ
Tvj=25°C,VCC=400V,IC=50.0A,VGE=0.0/15.0V,rG=7.0Ω,Lσ=90nH,Cσ=60pFLσ,CσfromFig.EEnergy losses include “tail” anddiode (IKW50N60H3) reverserecovery.
SwitchingCharacteristic,InductiveLoad
Valuemin. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=175°CTurn-on delay time td(on) - 23 - ns
Rise time tr - 31 - ns
Turn-off delay time td(off) - 273 - ns
Fall time tf - 24 - ns
Turn-on energy Eon - 1.42 - mJ
Turn-off energy Eoff - 1.13 - mJ
Total switching energy Ets - 2.55 - mJ
Tvj=175°C,VCC=400V,IC=50.0A,VGE=0.0/15.0V,rG=7.0Ω,Lσ=90nH,Cσ=60pFLσ,CσfromFig.EEnergy losses include “tail” anddiode (IKW50N60H3) reverserecovery.
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IGW50N60H3Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-12
Figure 1. Collectorcurrentasafunctionofswitchingfrequency(Tj≤175°C,D=0.5,VCE=400V,VGE=15/0V,rG=7Ω)
f,SWITCHINGFREQUENCY[kHz]
IC,C
OLLECTO
RCURRENT[A]
1 10 100 10000
20
40
60
80
100
120
140
TC=80°
TC=110°
TC=80°
TC=110°
Figure 2. Forwardbiassafeoperatingarea(D=0,TC=25°C,Tj≤175°C;VGE=15V)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,C
OLLECTO
RCURRENT[A]
1 10 100 10000.1
1
10
100
tp=1µs
10µs
50µs
100µs
200µs
500µs
DC
Figure 3. Powerdissipationasafunctionofcasetemperature(Tj≤175°C)
TC,CASETEMPERATURE[°C]
Ptot ,POWERDISSIPATION[W
]
25 50 75 100 125 150 1750
50
100
150
200
250
300
350
Figure 4. Collectorcurrentasafunctionofcasetemperature(VGE≥15V,Tj≤175°C)
TC,CASETEMPERATURE[°C]
IC,C
OLLECTO
RCURRENT[A]
25 50 75 100 125 150 1750
10
20
30
40
50
60
70
80
90
100
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IGW50N60H3Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-12
Figure 5. Typicaloutputcharacteristic(Tj=25°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,C
OLLECTO
RCURRENT[A]
0 1 2 3 4 5 60
25
50
75
100
125
150
175
200
VGE=20V
17V
15V
13V
11V
9V
7V
5V
Figure 6. Typicaloutputcharacteristic(Tj=175°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,C
OLLECTO
RCURRENT[A]
0 1 2 3 4 5 60
25
50
75
100
125
150
175
200
VGE=20V
17V
15V
13V
11V
9V
7V
5V
Figure 7. Typicaltransfercharacteristic(VCE=20V)
VGE,GATE-EMITTERVOLTAGE[V]
IC,C
OLLECTO
RCURRENT[A]
5 6 7 8 9 10 11 120
50
100
150
200Tj=25°CTj=175°C
Figure 8. Typicalcollector-emittersaturationvoltageasafunctionofjunctiontemperature(VGE=15V)
Tj,JUNCTIONTEMPERATURE[°C]
VCE(sat) ,COLLECTO
R-EMITTE
RSATU
RATION[V
]
0 25 50 75 100 125 150 1751.0
1.5
2.0
2.5
3.0
3.5IC=25AIC=50AIC=100A
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IGW50N60H3Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-12
Figure 9. Typicalswitchingtimesasafunctionofcollectorcurrent(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,rG=7Ω,testcircuitinFig.E)
IC,COLLECTORCURRENT[A]
t,SWITCHINGTIMES[ns]
10 20 30 40 50 60 70 80 90 10010
100
td(off)
tftd(on)
tr
Figure 10. Typicalswitchingtimesasafunctionofgateresistor(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,IC=50A,testcircuitinFig.E)
rG,GATERESISTOR[Ω]
t,SWITCHINGTIMES[ns]
0 5 10 15 20 2510
100
td(off)
tftd(on)
tr
Figure 11. Typicalswitchingtimesasafunctionofjunctiontemperature(ind.load,VCE=400V,VGE=15/0V,IC=50A,rG=7Ω,testcircuitinFig.E)
Tj,JUNCTIONTEMPERATURE[°C]
t,SWITCHINGTIMES[ns]
25 50 75 100 125 150 17510
100
td(off)
tftd(on)
tr
Figure 12. Gate-emitterthresholdvoltageasafunctionofjunctiontemperature(IC=0,8mA)
Tj,JUNCTIONTEMPERATURE[°C]
VGE(th) ,GATE
-EMITTE
RTHRESHOLD
VOLTAGE[V
]
0 25 50 75 100 125 150 1752.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0typ.min.max.
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IGW50N60H3Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-12
Figure 13. Typicalswitchingenergylossesasafunctionofcollectorcurrent(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,rG=7Ω,testcircuitinFig.E)
IC,COLLECTORCURRENT[A]
E,S
WITCHINGENERGYLOSSES[m
J]
10 20 30 40 50 60 70 80 90 1000
1
2
3
4
5
6
7
8Eoff
Eon
Ets
Figure 14. Typicalswitchingenergylossesasafunctionofgateresistor(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,IC=50A,testcircuitinFig.E)
rG,GATERESISTOR[Ω]
E,S
WITCHINGENERGYLOSSES[m
J]
2 6 10 14 18 220
1
2
3
4
5Eoff
Eon
Ets
Figure 15. Typicalswitchingenergylossesasafunctionofjunctiontemperature(indload,VCE=400V,VGE=15/0V,IC=50A,rG=7Ω,testcircuitinFig.E)
Tj,JUNCTIONTEMPERATURE[°C]
E,S
WITCHINGENERGYLOSSES[m
J]
25 50 75 100 125 150 1750.0
0.5
1.0
1.5
2.0
2.5
3.0Eoff
Eon
Ets
Figure 16. Typicalswitchingenergylossesasafunctionofcollectoremittervoltage(ind.load,Tj=175°C,VGE=15/0V,IC=50A,rG=7Ω,testcircuitinFig.E)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
E,S
WITCHINGENERGYLOSSES[m
J]
200 250 300 350 400 4500.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5Eoff
Eon
Ets
10
IGW50N60H3Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-12
Figure 17. Typicalgatecharge(IC=50A)
QGE,GATECHARGE[nC]
VGE,G
ATE
-EMITTE
RVOLTAGE[V
]
0 50 100 150 200 250 300 3500
2
4
6
8
10
12
14
16120V480V
Figure 18. Typicalcapacitanceasafunctionofcollector-emittervoltage(VGE=0V,f=1MHz)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
C,C
APACITANCE[pF]
0 10 20 3010
100
1000Cies
Coes
Cres
Figure 19. Typicalshortcircuitcollectorcurrentasafunctionofgate-emittervoltage(VCE≤400V,startatTj=25°C)
VGE,GATE-EMITTERVOLTAGE[V]
IC(SC) ,SHORTCIRCUITCOLLECTO
RCURRENT[A]
10 12 14 16 18 20150
250
350
450
550
650
750
Figure 20. Shortcircuitwithstandtimeasafunctionofgate-emittervoltage(VCE≤400V,startatTj≤150°C)
VGE,GATE-EMITTERVOLTAGE[V]
tSC,S
HORTCIRCUITW
ITHSTA
NDTIME[µs]
10 11 12 13 14 150
3
6
9
12
15
11
IGW50N60H3Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-12
Figure 21. IGBTtransientthermalimpedance(D=tp/T)
tp,PULSEWIDTH[s]
ZthJC,TRANSIENTTH
ERMALIMPEDANCE[K
/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001
0.01
0.1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:ri[K/W]:τi[s]:
17.0E-34.4E-5
20.037363781.0E-4
30.092050277.2E-4
40.12995748.3E-3
50.18354610.07425315
12
IGW50N60H3Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-12
PG-TO247-3
13
IGW50N60H3Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-12
t
a
a
b
b
td(off) tf trtd(on)
90% IC
10% IC
90% IC
10% IC
t
90% VGE
vGE(t)
t
t
iC(t)
vCE(t)
90% VGE
vGE(t)
t
t
iC(t)
vCE(t)
tt1 t4
2% IC
10% VGE
2% VCE
t2 t3
14
IGW50N60H3Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-12
RevisionHistory
IGW50N60H3
Revision:2014-03-12,Rev.2.2Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2010-02-01 -
1.2 2010-07-26 Preliminary datasheet
2.1 2013-12-10 New value ICES max limit at 175°C
2.2 2014-03-12 Max ratings Vce, Tvj ≥ 25°C
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