trench gate field-stop igbt, hb series 600 v, 60 a high speed
TRANSCRIPT
This is information on a product in full production.
February 2014 DocID024403 Rev 3 1/17
17
STGW60H60DLFB STGWT60H60DLFB
Trench gate field-stop IGBT, HB series 600 V, 60 A high speed
Datasheet - production data
Figure 1. Internal schematic diagram
Features• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• VCE(sat) = 1.6 V (typ.) @ IC = 60 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Low VF soft recovery co-packaged diode
• Lead free package
Applications• Induction heating
• Microwave oven
• Resonant converters
DescriptionThis device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new "HB" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
TO-247 TO-3P
12
3
12
3
TAB
C (2 or TAB)
G (1)
E (3)
Table 1. Device summary
Order code Marking Package Packaging
STGW60H60DLFB GW60H60DLFB TO-247 Tube
STGWT60H60DLFB GWT60H60DLFB TO-3P Tube
www.st.com
Contents STGW60H60DLFB, STGWT60H60DLFB
2/17 DocID024403 Rev 3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
DocID024403 Rev 3 3/17
STGW60H60DLFB, STGWT60H60DLFB Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VGE = 0) 600 V
IC Continuous collector current at TC = 25 °C 80(1)
1. Current level is limited by bond wires
A
IC Continuous collector current at TC = 100 °C 60 A
ICP(2)
2. Pulse width limited by maximum junction temperature
Pulsed collector current 240 A
VGE Gate-emitter voltage ±20 V
IF Continuous forward current at TC = 25 °C 80(1) A
IF Continuous forward current at TC = 100 °C 60 A
IFP(2) Pulsed forward current 240 A
PTOT Total dissipation at TC = 25 °C 375 W
TSTG Storage temperature range - 55 to 150 °C
TJ Operating junction temperature - 55 to 175 °C
Table 3. Thermal data
Symbol Parameter Value Unit
RthJC Thermal resistance junction-case IGBT 0.4 °C/W
RthJC Thermal resistance junction-case diode 1.47 °C/W
RthJA Thermal resistance junction-ambient 50 °C/W
Electrical characteristics STGW60H60DLFB, STGWT60H60DLFB
4/17 DocID024403 Rev 3
2 Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)CES
Collector-emitter breakdown voltage(VGE = 0)
IC = 2 mA 600 V
VCE(sat)Collector-emitter saturation voltage
VGE = 15 V, IC = 60 A 1.6 2
VVGE = 15 V, IC = 60 ATJ = 125 °C
1.75
VGE = 15 V, IC = 60 A
TJ = 175 °C1.85
VF Forward on-voltage
IF = 60 A 1.8 2.1
VIF = 60 A TJ = 125 °C 1.55
IF = 60 A TJ = 175 °C 1.5
VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V
ICESCollector cut-off current (VGE = 0)
VCE = 600 V 25 µA
IGESGate-emitter leakage current (VCE = 0)
VGE = ± 20 V 250 nA
Table 5. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
Cies Input capacitance
VCE = 25 V, f = 1 MHz, VGE = 0
- 7792 - pF
Coes Output capacitance - 262 - pF
CresReverse transfer capacitance
- 158 - pF
Qg Total gate chargeVCC = 480 V, IC = 60 A, VGE = 15 V, see Figure 27
- 306 - nC
Qge Gate-emitter charge - 126 - nC
Qgc Gate-collector charge - 58 - nC
DocID024403 Rev 3 5/17
STGW60H60DLFB, STGWT60H60DLFB Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(off) Turn-off delay time VCE = 400 V, IC = 60 A,
RG = 5 Ω, VGE = 15 V, see Figure 25
160 ns
tf Current fall time - 18 - ns
Eoff(1)
1. Turn-off losses include also the tail of the collector current.
Turn-off switching losses - 626 - µJ
td(off) Turn-off delay time VCE = 400 V, IC = 60 A,
RG = 5 Ω, VGE = 15 V,TJ = 175 °C, see Figure 25
184 ns
tf Current fall time - 117 - ns
Eoff(1) Turn-off switching losses - 1017 - µJ
Table 7. IGBT switching characteristics (capacitive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
Eoff(1)
1. Turn-off losses include also the tail of the collector current.
Turn-off switching losses
VCC = 320 V, RG = 10 Ω, IC = 60 A, L = 100 µH, Csnub = 20 nF, see Figure 26
- 450 -
µJVCC = 320 V, RG = 10 Ω, IC = 60 A, L = 100 µH, Csnub = 20 nF, TJ = 175 °C, see Figure 26
- 785 -
Electrical characteristics STGW60H60DLFB, STGWT60H60DLFB
6/17 DocID024403 Rev 3
2.1 Electrical characteristics (curves)
Figure 2. Power dissipation vs. case temperature
Figure 3. Collector current vs. case temperature
Figure 4. Output characteristics (TJ = 25°C) Figure 5. Output characteristics (TJ = 175°C)
Ptot
150
100
50
00 25 TC(°C)
(W)
100
200
50 75
250
175125 150
300
350
GIPD021020131435FSR IC
30
20
10
00 25 TC(°C)
(A)
100
40
50 75
50
60
70
175
VGE ≥ 15V, TJ ≤ 175 °C
125 150
80
GIPD021020131439FSR
IC
100
50
00 1 VCE(V)
(A)
4
150
2 3
200VGE=15V
9V
11V
GIPD021020131443FSR IC
150
100
50
00 1 VCE(V)
(A)
4
200
2 3
VGE=15V
7V
11V
9V
GIPD021020131448FSR
Figure 6. VCE(sat) vs. junction temperature Figure 7. VCE(sat) vs. collector current
C
VCE(sat)
1.8
1.6
1.4
1.2-50 TJ(°C)
(V)
100
2
0 50
2.2
150
2.4
2.6 VGE= 15V IC= 120A
IC= 60A
IC= 30A
GIPD021020131457FSR VCE(sat)
1.6
1.4
1.2
1.0
0 IC(A)
(V)
60
1.8
20 40
2
80
2.2
VGE= 15V
TJ= -40°C
TJ= 25°C
TJ= 175°C2.4
0.8100 120
GIPD021020131500FSR
DocID024403 Rev 3 7/17
STGW60H60DLFB, STGWT60H60DLFB Electrical characteristics
Figure 8. Collector current vs. switching frequency
Figure 9. Forward bias safe operating area
IC
60
40
20
01 f(kHz)
(A)
80
10
100
Rectangular current shape(duty cycle= 0.5, VCC= 400V, Rg=4.7Ω,
VGE = 0/15 V, TJ = 175 °C)
TC= 80°C
TC= 100°C
120
GIPD021020131506FSR
C = 25°C,
IC
100
10
1
0.11 VCE(V)
(A)
10
10 μs
100 μs
1 msSingle pulse
Tc= 25°C, TJ<= 175°CVGE= 15V
100
GIPD021020131512FSR
Figure 10. Transfer characteristics Figure 11. Diode VF vs. forward current
IC
150
100
50
07 VGE(V)
(A)
13
200
9 11
TJ=175°C
-40°C
25°C
VCE=10V
GIPD021020131522FSR
J
VF
2
1.6
1.2
0.820 IF(A)
(V)
2.4
40
TJ= 175°C
60 80 100 120
TJ= 25°C
TJ= -40°C
GIPD021020131534FSR
Figure 12. Normalized VGE(th) vs junction temperature
Figure 13. Normalized V(BR)CES vs. junction temperature
VGE(th)
1.1
1.0
0.6-50 TJ(°C)
(norm)
0 50 100 150
IC= 1mAVCE= VGE
0.7
0.8
0.9
GIPD021020131540FSRV(BR)CES
1.1
1.0
0.9-50 TJ(°C)
(norm)
0 50 100 150
IC= 2mA
GIPD021020131546FSR
Electrical characteristics STGW60H60DLFB, STGWT60H60DLFB
8/17 DocID024403 Rev 3
Figure 14. Capacitance variation Figure 15. Gate charge vs. gate-emitter voltage
C
10VCE(V)
(pF)
0.1 1 10
Cies
100
1000
10000
Coes
Cres
GIPD021020131619FSR VGE
16
8
0Qg(nC)
(V)
0 100
IC= 60AIGE= 1mA
VCC= 520V
2
4
6
200
10
12
14
300
GIPD021020131623FSR
Figure 16. Switching-off loss vs collector current
Figure 17. Switching-off loss vs gate resistance
E
0IC(A)
(μJ)
0 20 40
500
1000
1500
60 80
2000
2500
EOFF
3000VCC = 400V, VGE = 15V, RG = 10Ω, TJ = 175°C
100 120
GIPD021020131627FSR E
500RG(Ω)
(μJ)
2 6 10
1000
1500
2000
14 18 22
EOFF
VCC = 400 V, VGE = 15 V, IC = 60 A, TJ = 175 °C
GIPD021020131631FSR
Figure 18. Switching-off loss vs temperature Figure 19. Switching-off loss vs collector-emitter voltage
E
800TJ(°C)
(μJ)
25 50 75
900
1000
1100
100 150
EOFF
VCC= 400V, VGE= 15V, RG= 10Ω, IC= 60A
2100
1100
125
GIPD021020131634FSR E
500VCE(V)
(μJ)
100 200 300
800
1100
1400
400
EOFF
TJ= 175°C, VGE= 15V, RG= 10Ω, IC= 60A
500
1700
GIPD041020131010FSR
DocID024403 Rev 3 9/17
STGW60H60DLFB, STGWT60H60DLFB Electrical characteristics
Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance
t
1IC(A)
(ns)
0 40 80
100
120
tf
TJ= 175°C, VGE= 15V, RG= 10Ω, VCC= 400V
tdoff
10
160
GIPD021020131641FSR t
10RG(Ω)
(ns)
2 6 10
100
14
tf
TJ= 175°C, VGE= 15V, IC= 60A, VCC= 400V
tdoff
18 22
GIPD021020131653FSR
Figure 22. Switching-off losses vs. capacitive load
E
100Csnub(nF)
(μJ)
0 20 40
600
60
Rg= 10Ω, VGE= 15V, IC= 60A, VCC= 320V,
Lsnub= 0.1mH
80 100
TJ= 175°C
TJ= 25°C
200
300
400
500
700
800
900
GIPD021020131657FSR
Electrical characteristics STGW60H60DLFB, STGWT60H60DLFB
10/17 DocID024403 Rev 3
Figure 23. Thermal impedance for IGBT
Figure 24. Thermal impedance for diode
ZthTO2T_A
10-5 10-4 10-3 10-2 10-1 tp (s)10-2
10-1
K
Single pulse
d=0.5
0.01
0.02
0.05
0.1
0.2
DocID024403 Rev 3 11/17
STGW60H60DLFB, STGWT60H60DLFB Test circuits
3 Test circuits
Figure 25. Test circuit for inductive load switching
Figure 26. Test circuit for capacitive load switching
Figure 27. Gate charge test circuit Figure 28. Switching waveform
Figure 29. Diode recovery time waveform
AM01504v1 AM17096v1
Csnub
AM01505v1 AM01506v1
90%
10%
90%
10%
VG
VCE
ICTd(on)
TonTr(Ion)
Td(off)
Toff
Tf
Tr(Voff)
Tcross
90%
10%
AM01507v1
IRRM
IF
di/dt
trr
ta tb
Qrr
IRRM
t
VF
dv/dt
Package mechanical data STGW60H60DLFB, STGWT60H60DLFB
12/17 DocID024403 Rev 3
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
Figure 30. TO-247 drawing
0075325_G
DocID024403 Rev 3 13/17
STGW60H60DLFB, STGWT60H60DLFB Package mechanical data
Table 8. TO-247 mechanical data
Dim.mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70
Package mechanical data STGW60H60DLFB, STGWT60H60DLFB
14/17 DocID024403 Rev 3
Figure 31. TO-3P drawing
8045950_A
DocID024403 Rev 3 15/17
STGW60H60DLFB, STGWT60H60DLFB Package mechanical data
Table 9. TO-3P mechanical data
Dim.mm
Min. Typ. Max.
A 4.60 5
A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b 0.80 1 1.20
b1 1.80 2.20
b2 2.80 3.20
c 0.55 0.60 0.75
D 19.70 19.90 20.10
D1 13.90
E 15.40 15.80
E1 13.60
E2 9.60
e 5.15 5.45 5.75
L 19.50 20 20.50
L1 3.50
L2 18.20 18.40 18.60
øP 3.10 3.30
Q 5
Q1 3.80
Revision history STGW60H60DLFB, STGWT60H60DLFB
16/17 DocID024403 Rev 3
5 Revision history
Table 10. Document revision history
Date Revision Changes
10-Apr-2013 1 Initial release.
04-Oct-2013 2Document status changed from preliminary to production data.Added Section 2.1: Electrical characteristics (curves).Minor text changes.
24-Feb-2014 3 Updated title and description in cover page.
DocID024403 Rev 3 17/17
STGW60H60DLFB, STGWT60H60DLFB
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