ihp im technologiepark 25 15236 frankfurt (oder) germany © 2009 - all rights reserved ihp...
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![Page 1: IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany © 2009 - All rights reserved IHP Technology Roadmap Update and Future](https://reader035.vdocuments.net/reader035/viewer/2022062801/56649e495503460f94b3d500/html5/thumbnails/1.jpg)
IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2009 - All rights reserved
IHP Technology Roadmap Update and Future
Research Topics
Bernd Tillack
IHPIm Technologiepark 2515236 Frankfurt (Oder)
MOS-AK Meeting, April 2-3, 2009
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IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2009 - All rights reserved
IHP Frankfurt (Oder)
Founded 1983
1991 Member of the Leibniz Association
1999: “Innovations for High Performance microelectronics”1000 m² class 1 clean room,staff: ~ 250 co-workers
2009: Leibniz Institute
4 core competencies:Materials research, Si process technology, RF circuit design, wireless communication systems
Funding 2008Institutional funds: € 16 million Third-party funds: € 11.5 million ERDF funds: € 12.7 million (European Regional Development Fund)
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IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2009 - All rights reserved
Core Competencies
Silicon based high-frequency technologies, circuits and systems for wireless and broadband communication
• System solutions for wireless and broadband communicationPrototypes of mixed-signal ICs; system-on-chip
• RF circuit designAnalog circuits in the higher GHz-range (frontends, converter..)
• Technology platform for wireless and broadband communication Performance increasing and functionality extending modules for standard
CMOS
• New materials for microelectronics technologyincl. integration (e.g. SiGe:C, high-K, nanostructures)
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IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2009 - All rights reserved
Outline
• Technology Vision
• Future Research Topics
• Summary
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IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2009 - All rights reserved
Technology Vision
Develop Develop
High Value Added Technologies High Value Added Technologies
for Wireless and Broadband Applicationsfor Wireless and Broadband Applications
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IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2009 - All rights reserved
Technology Vision
CMOS Baseline Technology
Modular extension of CMOS technologies
SiGe:C HBT LDMOS Flash Memories Passive Devices
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IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2009 - All rights reserved
Development Early access QualifiedSeptember 2008
Technology Roadmap for MPW
* Qual. on customer request
Process 2007 2008 2009 2010 2011
SGB25V yes
GOD module
SG25H1 yesCMOS
Bipolar
SG25H3 yesCMOS
BipolarH3 PNP module PNP: 85/120 / 2.5 ready for qualification
SG13B
SG13S yes
SG13C only RF CMOS yes
Bipolar Performance fT/f
max (GHz) / BV
CE0 (V)
digital libs
75/95 / 2.4 45/90 / 4 25/70 / 7
190/190 / 1.9 180/220 / 1.9
120/140 / 2.3 110/190 / 2.3 45/140 / 5 25/80 / 7
250/300 /1.745/120/4.0 tbd in 2009
tbd in 2009
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IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2009 - All rights reserved
IHP‘s Technology Focus: More than Moore
Source: ITRS Roadmap 2005
IHP: 0.13 µm BiCMOS
THz Devices
Si Photonics
MEMS
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IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2009 - All rights reserved
Technology Vision – Future Research Topics
CMOS Baseline Technology
Modular extension of CMOS technologies – Diversification
SiGe:C HBT LDMOS Flash Memories Passive Devices
THz DevicesHBTs
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IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2009 - All rights reserved
THZ HBTs
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IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2009 - All rights reserved
DOTFIVE Project
• Timeframe
3-year (2/08-1/11) IP project of 7th Framework Program• Target
0.5 THz SiGe Heterojunction Bipolar Transistor
For the future development of communication, imaging and radar applications
• Consortium
15 partners from industry and academia in 5 countries
ST, Infineon, IMEC, IHP, XMOD, GWT-TUD, ENSEIRB, Bunderwehr Uni. Munich, Univ. of Neaples, Univ. of Linz, Univ. of Siegen, Univ. of Wuppertal
• Budget
Total € 14.75 million
€ 9.7 million founded by European Commission• For more information see www.dotfive.eu
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IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2009 - All rights reserved
DOTFIVE ProjectToday's state-of-the-art SiGe HBTs achieve roughly a maximum operating frequency of 300 GHz at room temperature. With Dotfive Europe is getting ahead of the RF ITRS roadmap:
(www.dotfive.eu)
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IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2009 - All rights reserved
Generations of IHP’s High-Speed HBTs
Record gate delay of 2.5 ps
Digital circuit speed benchmarked by ring oscillator gate delay
Fastest circuit speed achieved in any Si IC technology
IEDM 2008: SiGe HBT module with 2.5 ps gate delay
23456789
101112
2006
300/350200/200
70/100
120/140
fT
/fmax
(GHz)
Year
Profile optimization
Self aligned &elevated extrinsic base
Low parasitic coll. design
Optimized base link
C-Doped SiGe base
2004 20082002
2.5ps
2000
Gat
e D
elay
(ps
)
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IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2009 - All rights reserved
Technology Vision – Future Research Topics
CMOS Baseline Technology
Modular extension of CMOS technologies – Diversification
SiGe:C HBT RF LDMOS Flash Memories Passive Devices
THz DevicesHBTs MEMS Integration
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MEMS integration in BiCMOS
Goal:
Design and fabrication of dedicated MEMS components for Radio Frequency ICs
Integration of MEMS processing technique to BiCMOS
Major Applications Areas
RFMEMS: High-Q passives, RFMEMS Switches
Deep-Silicon Etching; Substrate etching under passives, TSVs, Sensors
RFMEMS Switches
Si
Deep-Silicon Etching, TSV
Etched Region
Sensors
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IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2009 - All rights reserved
Technology Vision – Future Research Topics
CMOS Baseline Technology
Modular extension of CMOS technologies – Diversification
SiGe:C HBT LDMOS Flash Memories Passive Devices
THz DevicesHBTs? MEMS Integration
Optical function“Si Photonics”
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IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2009 - All rights reserved
Silicon Photonics
(Source: Intel)
• Photonics electronics functional integration on CMOS (HELIOS) EU FP7
• SiLight BMBF
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IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2009 - All rights reserved
Si Photonics: Waveguide Integration
Waveguide preparation in IHP technology
High slope & minimal roughness
Excellent uniformuty
Small waveguide losses (<0.5dB/cm)
R=200…2000µm
…
R=1mm R=2mm
MZIs
S-BendsMMIs
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IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2009 - All rights reserved
40 Gbps TIA in SiGe Technology1
• Transimpedance Amplifier (TIA): amplifies & converts photo-current to an output voltage
• 40 Gbps needs ~30 GHz BW
• 200 GHz SiGe BiCMOS (SG25H1)
• Developed in cooperation w. TU Dresden / Ellinger
40 Gbps TIA in SiGe Technology
1 A 40 Gbit/s TRANSIMPEDANCE AMPLIFIER IN 0.25 μm SiGe TECHNOLOGY WITH ULTRA LOW POWER CONSUMPTION S. Hauptmann, D. Schoeniger, R. Eickhoff, F. Ellinger, and C. Scheytt, IEEE MIKON 2008
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40 Gbps TIA in SiGe Technology (II)
40 Gbps TIA in SiGe Technology
• Chip size 0.67 x 0.28 mm2
• TIA design combines High gain (73 dB) with very low power
Simulated: dashed; measured: solid
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Silicon PhotonicsBiCMOS technology with optical functionality • Goal: Integration electronics & waveguide optics in a
qualifiedtechnology offered to fabless design partners (customers)
Optical BiCMOS
0.25/0.13 BiCMOSTechnology
SOI WaveguideOptics
ModulIntegration
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Summary
0.25 µm/0.13 µm BiCMOS platform as baseline technology for
• MPW and prototyping
• Integration of additional functionality following the
“More than Moore” path
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Comparison with State-of-the-Art
IHP single poly (reference)+ well controlled base epitaxy+ low resistances
(Rücker et al. IEDM 2007)
New double poly+ fully self-aligned & lateral base-link =>reduced capacitances+ low silicide resistance+ enhanced SIC
E
B
C100nm
100nm
E
B
C
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CMOS/BiCMOS – MEMS Integration
BiCMOS + Microviscosimeter (Minimal invasive blood sugar sensor ):
Electronics + wireless communication + sensor function
Cantilever
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RFMEMS Switches in BiCMOS
Parameter Simulated Results
Insertion Loss 0.3 dB
Isolation 25 dB
OperatingVoltage
< 20 V(Measured Result)
Con-state/Coff-state >30
Movable Membrane
SupportingBeams
AnchorsBottom Electrode
Main application areas: Multiband circuits and 60-70 GHz applications
Reliability is the main concern
<10 V operating voltages seems possible
Etching Holes
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RFMEMS Capacitive Switch
10 20 30 40 50 60 700 80
-60
-40
-20
-80
0
freq, GHz
dB(M
EM
S_C
73_S
W_V
1M1.
.V1M
1_C
73_M
EA
S_S
.S(2
,1))
-0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8-1.0 1.0
-0.5
0.0
0.5
-1.0
1.0
nothing
plot
_vs(
dB(V
1M1_
C53
_ME
AS
_S.S
(2,1
)[48
]), V
1M1_
C53
_ME
AS
_S.v
cc) <in
valid
>pl
ot_v
s(dB
(V1M
1_C
53_M
EA
S_S
.S(2
,1)[5]
), V
1M1_
C53
_ME
AS
_S.v
cc) <in
valid
>pl
ot_v
s(dB
(V1M
1_C
53_M
EA
S_S
.S(2
,1)[10
]), V
1M1_
C53
_ME
AS
_S.v
cc) <in
valid
>pl
ot_v
s(dB
(V1M
1_C
53_M
EA
S_S
.S(2
,1)[30
]), V
1M1_
C53
_ME
AS
_S.v
cc) <in
valid
>pl
ot_v
s(dB
(V1M
1_C
53_M
EA
S_S
.S(2
,1)[40
]), V
1M1_
C53
_ME
AS
_S.v
cc) <in
valid
>
-0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8-1.0 1.0
-0.5
0.0
0.5
-1.0
1.0
nothing
plot
_vs(
dB(V
1M1_
C63
_ME
AS
_S.S
(2,1
)[48
]), V
1M1_
C63
_ME
AS
_S.v
cc) <in
valid
>pl
ot_v
s(dB
(V1M
1_C
63_M
EA
S_S
.S(2
,1)[5]
), V
1M1_
C63
_ME
AS
_S.v
cc) <in
valid
>pl
ot_v
s(dB
(V1M
1_C
63_M
EA
S_S
.S(2
,1)[10
]), V
1M1_
C63
_ME
AS
_S.v
cc) <in
valid
>pl
ot_v
s(dB
(V1M
1_C
63_M
EA
S_S
.S(2
,1)[30
]), V
1M1_
C63
_ME
AS
_S.v
cc) <in
valid
>pl
ot_v
s(dB
(V1M
1_C
63_M
EA
S_S
.S(2
,1)[40
]), V
1M1_
C63
_ME
AS
_S.v
cc) <in
valid
>
5 10 15 20 250 30
-25
-20
-15
-10
-5
-30
0
Voltage
S21
24 GHz
20 GHz
15Hz
5 GHz2.5 GHz
10 GHz
5 10 15 20 250 30
-25
-20
-15
-10
-5
-30
0
Applied Voltage (V)
S21
(dB
)
Pull-In Region
Measured Data @ 24 GHz
Pull-In voltage ~17V Mechanically stable up to 30V and no stiction observed At 24 GHz 25 dB isolationRF Characterization and reliability measurements are still on-going.
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Integration Elektronik-Photonik