introduction fundamental of solar cells 江雨龍 fabrication of
TRANSCRIPT
Solar_energy_conversion_160511_P1.ppt [] [][email protected]
http://web.ee.nchu.edu.tw/~aol/
May 11, 2017
Energy Demand
Could not gain enough energy
Low civilization
GIOE, NCHU
GIOE, NCHU
6
3.4 (± 0.4) mm/yr
Greenland Ice Loss
Damage of environment
renewable energy
Power By Sun
Ron Swenson, Solar Meets the Peak Oil Challenge, Solar 2006, July 2006
Solar energy can supply the energy demand for all population!
GIOE, NCHU
Photovoltaic (PV)
M. Viaud, Photovoltaic Solar Electricity Part of Global Strategy, AIE Conf., 20049
GIOE, NCHU
13 13
~ 200
GIOE, NCHU
AM0
AM1.5
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0
0.5
1.0
1.5
2.0
2.5
Sun: Black body radiation at 6000 K
AM 1.5: 1,000 W/m2
GIOE, NCHU
GIOE, NCHU
17 17
18 18
Single crystalline (sc-Si)
Thin Film
Single Crystalline
Thin Film
Silicon(Si) type
Compound type
Organic type
Dye- sensitized
Source :KRI Report No. 8: Solar Cells, February 2005
GIOE, NCHU GIOE, NCHU
GIOE, NCHU GIOE, NCHU
GIOE, NCHU GIOE, NCHU
1. Temperature: 25oC
GIOE, NCHU
Solar Cells
(a) Typical pn junction solar cell. (b) I-V characteristics in the dark and under illumination at intensities of 400 and 800 W m-2
From: S.O. Kasap, Optoelectronics and Photonics: Principles and Practices, Second Edition, © 2013 Pearson Education, USA
GIOE, NCHU
GIOE, NCHU
I-V curve
LEFT: A solar cell driving a load R and the definitions of positive current I and voltage V. RIGHT: The load line construction for finding the operating point when a
load RL = 16 is connected across the solar cell.
R
GIOE, NCHU
VocVm
Im
Isc
Pm
I efficiency
0
1
2
3
4
5
6
7
GIOE, NCHU
Voltage (V)
GIOE, NCHU
knesslayer thic-i
W
The phase difference = kc(2d)
A B
..1.3.5 4
40 40
GIOE, NCHU
41 41
GIOE, NCHU
Material Czochralski Cutting Diffusion Electrode Mono-crystal Si
Silicon
formation
Silicon
Crucible 1500 deg.
RF power
a-Si PV is processed with silane gas (SiH4 ), while c-Si PV is made from silicon wafer.
GIOE, NCHU
44 44
Poly-Silicon Ingot Wafer
/
Solar Cell
ModuleSystem Design
(quartz powder → metallurgical grade silicon (MGS))
Si (s) + 3HCl (g) → SiHCl3 (g) + H2 (g)
(MGS → SiHCl3, purify SiHCl3 by distillation)
SiHCl3 (g) + H2 (g) → Si (s) + 3HCl (g)
(Siemens method: SiHCl3 (g) → solar grade silicon (SGS))
GIOE, NCHU
46 46
Karl Hesse, Ewald Schindlbeck, WACKER POLYSILICON, April 11, 2005
Siemens method: poly-Si
GIOE, NCHU
49 49
50 50
Fabrication of poly-Si wafer GIOE, NCHU
54 54
Quartz crucible
Dr. Armin Müller, Dertsche Solar AG, 1st International Advanced PV Manufacturing Technology Conference, Munich 13th April 2005.
GIOE, NCHU
55 55
Poly-Si Ingot
Dr. Armin Müller, Dertsche Solar AG, 1st International Advanced PV Manufacturing Technology Conference, Munich 13th April 2005.
GIOE, NCHU
a-Si:H solar cells
1965 Sterling & Swann, GD-CVD a-Si:H 1975, 1976 Spear & LeComber, PH3, B2H6 doping 1976 Carlson, first a-Si:H solar cell 1980 Sanyo, a-Si:H solar cells for consumer products 2007 MHI, 1.4 m 1.1 m a-Si:H/c-Si:H solar module
GIOE, NCHU
64
High energy yield (kWh/kWp)
More resistance against shading
Silicon thin film PV outputs power robustly even in shading condition.
http://www.nexpw.com/Technology/Technology_sta
http://www.nexpw.com/Technology/Technology_sta
Source: Kanaka Silicon PV
Low temperature process
GIOE, NCHU
Research topics of Si thin-film solar cells GIOE, NCHU
72
1965 H.F. Sterling
1975 Dundee University: doping in a-Si:H
GIOE, NCHU
Gas pressure monitor and control
Substrate temperature monitor and control
RF power supply
Deposition conditions for Device-quality a-Si:H films
Substrate Temp. RF power density Chamber pressure H2/SiH4+H2 deposition electron Ionization
(oC) (W/cm2) (torr) (%) rate density (%)
(nm/s) (cm-3)
150~300 <0.1 0.1~1 0~90 0.1~0.3 109 10-5
GIOE, NCHU
p layer: SiH4 + H2 + B2H6 + CH4
i layer: SiH4 + H2
GIOE, NCHU
First reaction Secondary reaction
SiH2 + H2 +e SiH4 + SiH2Si2H6
SiH3 + H +e SiH3 + SiH4 SiH4 + SiH3
SiH + H2 + H +e SiH4 + Si2H6 SinHm
SiH2 + H2 +2e
SiH3 + + H + 2e
KRI Report No. 8: Solar Cells, February 2005
GIOE, NCHU
GIOE, NCHU
84
Rear side encapsulation
Hydrogenated microcrystalline silicon (c-Si:H)
from small grain imbedded into amorphous matrix to fully crystallized
GIOE, NCHU
band structure
Si-H bonding configurations in a-Si:H
0 500 1000 1500 2000 2500 3000 3500 4000 4500 -0.08
-0.06
-0.04
-0.02
0.00
0.02
0.04
0.06
0.08
wagging bending stretching
SiH3 630~640 850~860, 890 2120
GIOE, NCHU
90
In te
n si
Properties Requirements
Photo conductivity (AM1.5 100 mW/cm2) 1 × 10-5 (- cm)-1
Band gapTauc plot 1.8 eV
Absorption coefficient600 nm 3.5 × 104 cm-1
Absorption coefficient 400 nm 5 × 105 cm-1
Activation energy 0.8 eV
Hydrogen contentPECVD a-Si:H 9 ~ 11 at%
MicrostructureR 0.1
Conductivity (-cm-1) > 10-5 > 10-3
Activation energy (eV) < 0.5 < 0.3
Absorption coefficient
4101 4103
GIOE, NCHU
96
GIOE, NCHU
SEM photograph of a-Si:H/μc-Si:H tandem cell (July 1999, Science Mag.)
GIOE, NCHU
Maruyama et al., Solar Energy Materials & Solar cells 74 (2002)
GIOE, NCHU
thinner i-layers
Maruyama et al., Solar Energy Materials & Solar cells 74 (2002)
a-Si:H/a-SiGe:H tandem cell GIOE, NCHU
102
GIOE, NCHU
104
K. Yamamoto et al. / Solar Energy Materials & Solar Cells 66 (2001)
GIOE, NCHU
GIOE, NCHU
GIOE, NCHU
=
108
GIOE, NCHU
Grain size and shape
A. Shah et al. Materials Science and Engineering B69–70 (2000) 219–226
GIOE, NCHU
GIOE, NCHU
GIOE, NCHU
OC Voltage (V) 85.5
SC Current (A) 2.57
Weight (kg) 25
NexPower: a-Si/µc-Si Module
NexPower: Bicips+ BIPV Module
BF-080RN (Golden-Yellow)
Electrical (front / rear) Nominal Power [W] 80 / 62 Dimension [mm] 1400 * 1100 * 8.9 Weight [kg] 32
May 11, 2017
Energy Demand
Could not gain enough energy
Low civilization
GIOE, NCHU
GIOE, NCHU
6
3.4 (± 0.4) mm/yr
Greenland Ice Loss
Damage of environment
renewable energy
Power By Sun
Ron Swenson, Solar Meets the Peak Oil Challenge, Solar 2006, July 2006
Solar energy can supply the energy demand for all population!
GIOE, NCHU
Photovoltaic (PV)
M. Viaud, Photovoltaic Solar Electricity Part of Global Strategy, AIE Conf., 20049
GIOE, NCHU
13 13
~ 200
GIOE, NCHU
AM0
AM1.5
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0
0.5
1.0
1.5
2.0
2.5
Sun: Black body radiation at 6000 K
AM 1.5: 1,000 W/m2
GIOE, NCHU
GIOE, NCHU
17 17
18 18
Single crystalline (sc-Si)
Thin Film
Single Crystalline
Thin Film
Silicon(Si) type
Compound type
Organic type
Dye- sensitized
Source :KRI Report No. 8: Solar Cells, February 2005
GIOE, NCHU GIOE, NCHU
GIOE, NCHU GIOE, NCHU
GIOE, NCHU GIOE, NCHU
1. Temperature: 25oC
GIOE, NCHU
Solar Cells
(a) Typical pn junction solar cell. (b) I-V characteristics in the dark and under illumination at intensities of 400 and 800 W m-2
From: S.O. Kasap, Optoelectronics and Photonics: Principles and Practices, Second Edition, © 2013 Pearson Education, USA
GIOE, NCHU
GIOE, NCHU
I-V curve
LEFT: A solar cell driving a load R and the definitions of positive current I and voltage V. RIGHT: The load line construction for finding the operating point when a
load RL = 16 is connected across the solar cell.
R
GIOE, NCHU
VocVm
Im
Isc
Pm
I efficiency
0
1
2
3
4
5
6
7
GIOE, NCHU
Voltage (V)
GIOE, NCHU
knesslayer thic-i
W
The phase difference = kc(2d)
A B
..1.3.5 4
40 40
GIOE, NCHU
41 41
GIOE, NCHU
Material Czochralski Cutting Diffusion Electrode Mono-crystal Si
Silicon
formation
Silicon
Crucible 1500 deg.
RF power
a-Si PV is processed with silane gas (SiH4 ), while c-Si PV is made from silicon wafer.
GIOE, NCHU
44 44
Poly-Silicon Ingot Wafer
/
Solar Cell
ModuleSystem Design
(quartz powder → metallurgical grade silicon (MGS))
Si (s) + 3HCl (g) → SiHCl3 (g) + H2 (g)
(MGS → SiHCl3, purify SiHCl3 by distillation)
SiHCl3 (g) + H2 (g) → Si (s) + 3HCl (g)
(Siemens method: SiHCl3 (g) → solar grade silicon (SGS))
GIOE, NCHU
46 46
Karl Hesse, Ewald Schindlbeck, WACKER POLYSILICON, April 11, 2005
Siemens method: poly-Si
GIOE, NCHU
49 49
50 50
Fabrication of poly-Si wafer GIOE, NCHU
54 54
Quartz crucible
Dr. Armin Müller, Dertsche Solar AG, 1st International Advanced PV Manufacturing Technology Conference, Munich 13th April 2005.
GIOE, NCHU
55 55
Poly-Si Ingot
Dr. Armin Müller, Dertsche Solar AG, 1st International Advanced PV Manufacturing Technology Conference, Munich 13th April 2005.
GIOE, NCHU
a-Si:H solar cells
1965 Sterling & Swann, GD-CVD a-Si:H 1975, 1976 Spear & LeComber, PH3, B2H6 doping 1976 Carlson, first a-Si:H solar cell 1980 Sanyo, a-Si:H solar cells for consumer products 2007 MHI, 1.4 m 1.1 m a-Si:H/c-Si:H solar module
GIOE, NCHU
64
High energy yield (kWh/kWp)
More resistance against shading
Silicon thin film PV outputs power robustly even in shading condition.
http://www.nexpw.com/Technology/Technology_sta
http://www.nexpw.com/Technology/Technology_sta
Source: Kanaka Silicon PV
Low temperature process
GIOE, NCHU
Research topics of Si thin-film solar cells GIOE, NCHU
72
1965 H.F. Sterling
1975 Dundee University: doping in a-Si:H
GIOE, NCHU
Gas pressure monitor and control
Substrate temperature monitor and control
RF power supply
Deposition conditions for Device-quality a-Si:H films
Substrate Temp. RF power density Chamber pressure H2/SiH4+H2 deposition electron Ionization
(oC) (W/cm2) (torr) (%) rate density (%)
(nm/s) (cm-3)
150~300 <0.1 0.1~1 0~90 0.1~0.3 109 10-5
GIOE, NCHU
p layer: SiH4 + H2 + B2H6 + CH4
i layer: SiH4 + H2
GIOE, NCHU
First reaction Secondary reaction
SiH2 + H2 +e SiH4 + SiH2Si2H6
SiH3 + H +e SiH3 + SiH4 SiH4 + SiH3
SiH + H2 + H +e SiH4 + Si2H6 SinHm
SiH2 + H2 +2e
SiH3 + + H + 2e
KRI Report No. 8: Solar Cells, February 2005
GIOE, NCHU
GIOE, NCHU
84
Rear side encapsulation
Hydrogenated microcrystalline silicon (c-Si:H)
from small grain imbedded into amorphous matrix to fully crystallized
GIOE, NCHU
band structure
Si-H bonding configurations in a-Si:H
0 500 1000 1500 2000 2500 3000 3500 4000 4500 -0.08
-0.06
-0.04
-0.02
0.00
0.02
0.04
0.06
0.08
wagging bending stretching
SiH3 630~640 850~860, 890 2120
GIOE, NCHU
90
In te
n si
Properties Requirements
Photo conductivity (AM1.5 100 mW/cm2) 1 × 10-5 (- cm)-1
Band gapTauc plot 1.8 eV
Absorption coefficient600 nm 3.5 × 104 cm-1
Absorption coefficient 400 nm 5 × 105 cm-1
Activation energy 0.8 eV
Hydrogen contentPECVD a-Si:H 9 ~ 11 at%
MicrostructureR 0.1
Conductivity (-cm-1) > 10-5 > 10-3
Activation energy (eV) < 0.5 < 0.3
Absorption coefficient
4101 4103
GIOE, NCHU
96
GIOE, NCHU
SEM photograph of a-Si:H/μc-Si:H tandem cell (July 1999, Science Mag.)
GIOE, NCHU
Maruyama et al., Solar Energy Materials & Solar cells 74 (2002)
GIOE, NCHU
thinner i-layers
Maruyama et al., Solar Energy Materials & Solar cells 74 (2002)
a-Si:H/a-SiGe:H tandem cell GIOE, NCHU
102
GIOE, NCHU
104
K. Yamamoto et al. / Solar Energy Materials & Solar Cells 66 (2001)
GIOE, NCHU
GIOE, NCHU
GIOE, NCHU
=
108
GIOE, NCHU
Grain size and shape
A. Shah et al. Materials Science and Engineering B69–70 (2000) 219–226
GIOE, NCHU
GIOE, NCHU
GIOE, NCHU
OC Voltage (V) 85.5
SC Current (A) 2.57
Weight (kg) 25
NexPower: a-Si/µc-Si Module
NexPower: Bicips+ BIPV Module
BF-080RN (Golden-Yellow)
Electrical (front / rear) Nominal Power [W] 80 / 62 Dimension [mm] 1400 * 1100 * 8.9 Weight [kg] 32