irfu saclay 3d-maps design iphc / irfu collaboration christine hu-guo (iphc) outline 3d-maps...
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irfu
saclay
3D-MAPS Design IPHC / IRFU collaboration
Christine Hu-Guo (IPHC)
Outline 3D-MAPS advantages Why using high resistivity substrate 3 types of 3D-MAPS design
IRFU - IPHC [email protected] 211-14/10/2009 Ecole microélectronique de l'IN2P3
Using 3DIT to improve MAPS performances
3DIT are expected to be particularly beneficial for MAPS : Combine different fabrication processes Resorb most limitations specific to 2D MAPS
Split signal collection and processing functionalities, use best suited technology for each Tier :
Tier-1: charge collection system Epitaxy (depleted or not) ultra thin layer X0 Tier-2: analogue signal processing analogue, low Ileak, process (number of metal layers)
Tier-3: mixed and digital signal processing Tier-4: data formatting (electro-optical conversion ?)
digital process (number of metal layers)feature size fast laser driver, etc.
Analog Readout Circuit
Diode
Pixel Controller,
A/D conversion
Pix
el C
on
tro
ller
, C
DS
Digital
Analog
Sensor
~< 50 µmAnalog Readout
Circuit
Diode
~ 20 µm
Analog Readout Circuit
Diode
Analog Readout Circuit
Diode
TSV
2D - MAPS 3D - MAPS
IPHC-DUT [email protected] 714-18/01/2008
iPHC
Metal layers
Polysilicon
P-Well N-Well P-Well
N+ N+ P+ N+
Dielectric for insulation and passivation
Charged particles
100% efficiency.
Radiation
--
--
--
- ++
+++
++
- +- +- +
P-substrate (~100s m thick)
P-epitaxial layer(up to to 20 m thick)
Potential barriers
epi
sub
NN
lnq
kTV
Sensor tier = MAPS integration 1st level amplification
30
-40
µm
Radiation hard Cluster S/N
IRFU - IPHC [email protected] 311-14/10/2009 Ecole microélectronique de l'IN2P3
High resistivity sensitive volume faster charge collection
Exploration of a VDSM technology with depleted (partially ~30 µm) substrate: Project "LePix" driven by CERN for SLHC trackers (attractive for CBM, ILC and CLIC Vx
Det.) Exploration of a technology with high resistivity thin epitaxial layer
XFAB 0.6 µm techno: ~15 µm EPI ( ~ O(103).cm), Vdd = 5 V (MIMOSA25)
Benefit from the need of industry for improvement of the photo-sensing elements embedded into CMOS chip
For comparison: standard CMOS technology, low resistivity P-epi
high resistivity P-epi: size of depletion zone size is comparable to the P-epi thickness!
TCAD Simulation (by A. DOROKHOV)15 µm high resistivity EPI compared to 15 µm standard EPI
IRFU - IPHC [email protected] 411-14/10/2009 Ecole microélectronique de l'IN2P3
Landau MP (in electrons) versus cluster sizeLandau MP (in electrons) versus cluster size0 neq/cm²
0.3 x 1013 neq/cm²
1.3 x 1013 neq/cm²
3 x 1013 neq/cm²
MIMOSA25 in a high resistivity epitaxial layer
20 μm pitch, + 20°C, self-bias diode @ 4.5 V, 160 μs read-out time Fluence ~ (0.3 / 1.3 / 3·)1013 neq/cm2 Tolerance improved by > 1 order of mag. Need to confirm det (uniformity !) with beam tests
16x9
6
Pit
ch 2
0µm
MIMOSA25
To compare: «standard» non-depleted EPI substrate: MIMOSA15 Pitch=20µm, before and after 5.8x1012 neq/cm2
saturation -> >90 % of charge is collected is 3 pixels -> very low charge spread for depleted substrate
IRFU - IPHC [email protected] 511-14/10/2009 Ecole microélectronique de l'IN2P3
IPHC 3D-MAPS: Self Triggering Pixel Strip-like Tracker (STriPSeT)
Combine Tezzaron/Chartered 2-tiers process with XFAB high resistivity EPI process
Tier-1: XFAB, 15 µm depleted epitaxy ultra thin sensor!!! Depleted Fast charge collection (~5ns) should be radiation tolerant For small pitch, charge contained in less than two pixels Sufficient (rather good) S/N ratio defined by the first stage “charge amplification” ( >x10) by capacitive coupling to the second stage
Tier-2: Shaperless front-end: (Pavia + Bergamo) Single stage, high gain, folded cascode based charge amplifier, with a current source in the feedback loop
Shaping time of ~200 ns very convenient: good time resolution Low offset, continuous discriminator
Tier-3: Digital: Data driven (self-triggering), sparsified binary readout, X and Y projection of hit pixels pattern
Matrix 256x256 2 µs readout time
Tier-1 Tier-2 Tier-3
Cd~10fF
G~1
Cc=100fF
Cf~10fF off <10 mV
Digital RD
Vth
Ziptronix (Direct Bond Interconnect, DBI®*)
Tezzaron (metal-metal (Cu)
thermocompression) DBI® – Direct Bond Interconnect, low temperature CMOS compatible direct oxide bonding with scalable interconnect for highest density 3D interconnections (< 1 µm Pitch, > 108 /cm² Possible)
W. DULINSKI, A. DOROKHOV, F. MOREL, G. BERTOLONE, X. WEI, …
20 µm
Tier 2
IRFU - IPHC [email protected] 611-14/10/2009 Ecole microélectronique de l'IN2P3
IPHC 3D-MAPS Delayed R.O. Architecture for the ILC Vertex Detector
Try 3D architecture based on small pixel pitch, motivated by : Single point resolution < 3 μm with binary output Probability of > 1 hit per train << 10 % 12 μm pitch :
sp ~ 2.5 μm
• Probability of > 1 hit/train < 5 %
Split signal collection and processing functionalities : Tier-1: A: sensing diode & amplifier, B: shaper & discriminator Tier-2: time stamp (5 bits) + overflow bit & delayed readout
Architecture prepares for 3-Tier perspectives : 12 µm
~1 ms ~1 ms~200 ms
Acquisition Readout
Y. FU, A. BROGNA, A. DOROKHOV, C. COLLEDANI, C. HU, …
Detection diode
or Q injection
Amplifier
NMOS only
Amp.+Shaper
Discriminator
Hit identification
12 µ
m
24 µm
5 bits (7?) Time Stamp
2nd hit flag
Delayed Readout
Tier 1 Tier 2A B
future+Detection diode
& Amp
ASD
TS & R.O.
12 µm
IRFU - IPHC [email protected] 711-14/10/2009 Ecole microélectronique de l'IN2P3
IRFU & IPHC 3D-MAPS: RSBPix
FAST R.O. architecture aiming to minimise power consumption Subdivide sensitive area in ”small” matrices
running INDIVIDUALLY in rolling shutter mode Adapt the number of raws to required frame r.o. time
few µs r.o. time may be reached (???)
Planned also to connect this 2 tier circuit to XFAB detector tier
Building Blocks: PLL, 8b/10b, Bias DAC, Pre-Amplifier, Buffer….
MOSCAP (20fF)
Vclp2
PWRON_D
MOSCAP
Vclp2
PWRON_D
Latch
Latch
Clamp1 Clamp4
Vclp2
Vclp2
Clamp0
Track
CS CS
Clamp
MOSCAP (100fF)
Vclp1+Vth
PWRON_A
Vrst
Av ~ 4
CS
Tier-1: NMOS only Tier-2
Digital Memory
and
Digital Readout
DiscriminatorDREADLATCH_D
Y. DEGERLI, W. DULINSKI, … (Tier-1)
20µm