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www.DataSheet4U.com ©2001 Fairchild Semiconductor Corporation Rev. B1, May 2001 FJAF6812 NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings T C =25°C unless otherwise noted * Pulse Test: PW=300µs, duty Cycle=2% Pulsed Electrical Characteristics T C =25°C unless otherwise noted * Pulse Test: PW=20µs, duty Cycle=1% Pulsed Thermal Characteristics T C =25°C unless otherwise noted Symbol Parameter Rating Units V CBO Collector-Base Voltage 1500 V V CEO Collector-Emitter Voltage 750 V V EBO Emitter-Base Voltage 6 V I C Collector Current (DC) 12 A I CP * Collector Current (Pulse) 24 A P C Collector Dissipation 60 W T J Junction Temperature 150 °C T STG Storage Temperature -55 ~ 150 °C Symbol Parameter Test Conditions Min Typ Max Units I CES Collector Cut-off Current V CB =1400V, R BE =0 1 mA I CBO Collector Cut-off Current V CB =800V, I E =0 10 µA I EBO Emitter Cut-off Current V EB =4V, I C =0 1 mA BV EBO Emitter-Base Breakdown Voltage I E =500µA, I C =0 6 V h FE1 h FE2 DC Current Gain V CE =5V, I C =1A V CE =5V, I C =8A 10 5 40 8 V CE (sat) Collector-Emitter Saturation Voltage I C =8A, I B =2A 3 V V BE (sat) Base-Emitter Saturation Voltage I C =8A, I B =2A 1.5 V t STG * Storage Time V CC =200V, I C =7A, R L =30I B1 = 1.4A, I B2 = - 2.8A 3 µs t F * Fall Time 0.2 µs Symbol Parameter Typ Max Units R θjC Thermal Resistance, Junction to Case 1.4 2.08 °C/W High Voltage Color Display Horizontal Deflection Output High Collector-Base Breakdown Voltage : BV CBO = 1500V High Switching Speed : t F (typ.) =0.1µs For Color Monitor FJAF6812 TO-3PF 1 1.Base 2.Collector 3.Emitter www.DataSheet4U.com

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  • www.DataSheet4U.com

    2001 Fairchild Semiconductor Corporation Rev. B1, May 2001

    FJAF6812

    NPN Triple Diffused Planar Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted

    * Pulse Test: PW=300s, duty Cycle=2% Pulsed

    Electrical Characteristics TC=25C unless otherwise noted

    * Pulse Test: PW=20s, duty Cycle=1% Pulsed

    Thermal Characteristics TC=25C unless otherwise noted

    Symbol Parameter Rating UnitsVCBO Collector-Base Voltage 1500 VVCEO Collector-Emitter Voltage 750 VVEBO Emitter-Base Voltage 6 VIC Collector Current (DC) 12 AICP* Collector Current (Pulse) 24 APC Collector Dissipation 60 WTJ Junction Temperature 150 CTSTG Storage Temperature -55 ~ 150 C

    Symbol Parameter Test Conditions Min Typ Max UnitsICES Collector Cut-off Current VCB=1400V, RBE=0 1 mAICBO Collector Cut-off Current VCB=800V, IE=0 10 AIEBO Emitter Cut-off Current VEB=4V, IC=0 1 mABVEBO Emitter-Base Breakdown Voltage IE=500A, IC=0 6 VhFE1hFE2

    DC Current Gain VCE=5V, IC=1AVCE=5V, IC=8A

    105

    408

    VCE(sat) Collector-Emitter Saturation Voltage IC=8A, IB=2A 3 VVBE(sat) Base-Emitter Saturation Voltage IC=8A, IB=2A 1.5 VtSTG* Storage Time VCC=200V, IC=7A, RL=30

    IB1= 1.4A, IB2= - 2.8A3 s

    tF* Fall Time 0.2 s

    Symbol Parameter Typ Max UnitsRjC Thermal Resistance, Junction to Case 1.4 2.08 C/W

    High Voltage Color Display Horizontal Deflection Output High Collector-Base Breakdown Voltage : BVCBO = 1500V High Switching Speed : tF(typ.) =0.1s For Color Monitor

    FJAF6812

    TO-3PF11.Base 2.Collector 3.Emitter

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  • www.DataSheet4U.com

    2001 Fairchild Semiconductor Corporation Rev. B1, May 2001

    FJAF6812

    Typical Characteristics

    Figure 1. Static Characteristics Figure 2. DC Current Gain

    Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage

    Figure 5. Base-Emitter On Voltage Figure 6. Switching Time

    0 2 4 6 8 10 12 140

    1

    2

    3

    4

    5

    6

    7

    8

    9

    10

    11

    Ib=1.8A

    Ib=1.0A

    Ib=600mA

    Ib=1.4AIb=1.6A

    Ib=800mA

    Ib=1.2A

    Ib=400mA

    Ib=200mA

    I C [A

    ], C

    OLL

    ECTO

    R C

    UR

    REN

    T

    VCE [V], COLLECTOR-EMITTER VOLTAGE

    0.1 1 101

    10

    100125oC 75oC

    25oCTa= - 25oC

    VCE = 5V

    h FE,

    DC

    CU

    RR

    ENT

    GAI

    N

    IC [A], COLLECTOR CURRENT

    0.1 1 100.01

    0.1

    1

    10

    100

    IC = 5IB

    125oC

    75oC

    25oC

    Ta = - 25oC

    V CE(

    sat)

    [V],

    SATU

    RAT

    ION

    VO

    LTAG

    E

    IC [A], COLLECTOR CURRENT

    0.1 1 100.01

    0.1

    1

    10

    100

    IC = 3IB

    125oC

    75oC

    25oC

    Ta = - 25oC

    V C

    E(sa

    t) [V

    ], SA

    TUR

    ATIO

    N V

    OLT

    AGE

    IC [A], COLLECTOR CURRENT

    0.0 0.5 1.0 1.50

    2

    4

    6

    8

    10

    12

    14

    125oC

    75oC25oC

    Ta = - 25oC

    VCE = 5V

    I C [A

    ], C

    OLL

    ECTO

    R C

    UR

    REN

    T

    VBE [V], BASE-EMITTER VOLTAGE

    -0.1 -1 -100.01

    0.1

    1

    10

    tSTG

    tF

    RESISTIVE LOADVcc = 200VIC = 7AIB1 = 1.4A

    t STG [

    s], S

    TORA

    GE

    TIM

    Et F

    [s]

    , FAL

    L TI

    ME

    IB2 [A], REVERSE BASE CURRENT

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    2001 Fairchild Semiconductor Corporation Rev. B1, May 2001

    FJAF6812

    Typical Characteristics (Continued)

    Figure 7. Forward Bias Safe Operating Area Figure 8. Reverse Bias Safe Operating Area

    Figure 9. Power Derating

    1 10 100 10000.01

    0.1

    1

    10

    100

    5000

    1ms300s

    TC = 25 oCSingle Pulse

    10ms

    IC (Pulsed)

    IC (DC)

    I C [A

    ], C

    OLL

    ECTO

    R C

    UR

    REN

    T

    VCE [V], COLLECTOR-EMITTER VOLTAGE

    10 100 10001

    10

    30

    5000

    IB1 = 1.2A, IB2 = - 4AVBE(off) = - 3VL = 200HSingle Pulse

    I C [A

    ], C

    OLL

    ECTO

    R C

    UR

    REN

    T

    VCE [V], COLLECTOR-EMITTER VOLTAGE

    0 25 50 75 100 125 150 1750

    10

    20

    30

    40

    50

    60

    70

    80

    P C [W

    ], PO

    WER

    DIS

    SIPA

    TIO

    N

    TC [oC], CASE TEMPERATURE

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    Package Demensions

    2001 Fairchild Semiconductor Corporation Rev. B1, May 2001

    FJAF6812

    Dimensions in Millimeters

    15.50 0.20 3.60 0.20

    26.5

    0 0

    .20

    4.50

    0.2

    0

    10.0

    0 0

    .20

    16.5

    0 0

    .20

    10

    16.5

    0 0

    .20

    22.0

    0 0

    .20

    23.0

    0 0

    .20

    1.50

    0.2

    0

    14.5

    0 0

    .20

    2.00

    0.2

    0

    2.00 0.202.00 0.20

    0.85 0.03

    2.00 0.20

    5.50 0.20

    3.00 0.20(1.50)

    3.30 0.20

    2.00 0.204.00 0.20

    2.50

    0.2

    0

    14.8

    0 0

    .20

    3.30

    0.2

    0

    2.00

    0.2

    0

    5.50

    0.2

    0

    0.75 +0.200.10

    0.90 +0.200.10

    5.45TYP[5.45 0.30]

    5.45TYP[5.45 0.30]

    TO-3PF

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    2001 Fairchild Semiconductor Corporation Rev. H2

    TRADEMARKS

    The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is notintended to be an exhaustive list of all such trademarks.

    DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANYLIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

    LIFE SUPPORT POLICY

    FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTORCORPORATION.As used herein:1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected toresult in significant injury to the user.

    2. A critical component is any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or effectiveness.

    PRODUCT STATUS DEFINITIONS

    Definition of Terms

    Datasheet Identification Product Status Definition

    Advance Information Formative or In Design

    This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

    Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

    No Identification Needed Full Production This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

    Obsolete Not In Production This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

    ACExBottomlessCoolFETCROSSVOLTDenseTrenchDOMEEcoSPARKE2CMOSEnSignaFACTFACT Quiet Series

    FASTFASTrFRFETGlobalOptoisolatorGTOHiSeCISOPLANARLittleFETMicroFETMICROWIREOPTOLOGIC

    OPTOPLANARPACMANPOPPowerTrenchQFETQSQT OptoelectronicsQuiet SeriesSLIENT SWITCHERSMART STARTStealth

    SuperSOT-3SuperSOT-6SuperSOT-8SyncFETTinyLogicUHCUltraFETVCX

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